# Bipolar (BJT) Single Transistor, PNP, 40 V, 200 mA, 250 mW, SOT-523F, Surface Mount

![Product image](https://novapart.co/image/farnell:2454020/)

**URL**: https://novapart.co/products/MMBT3906T/bipolar-bjt-single-transistor-pnp-40-v-200-ma-250
**SKU**: MMBT3906T
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.0470
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 250mW |
| Dc Current Gain Hfe | 30hFE |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 250MHz |
| Transistor Case Style | SOT-523F |
| Dc Current Gain Hfe Min | 30hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 200mA |
| Collector Emitter Voltage Max | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2454020/)

## **MMBT3906T** 

## **PNP Epitaxial Silicon Transistor** 

## **Features** 

- General purpose amplifier transistor. 

- Ultra-Small Surface Mount Package for all types. 

- Suitable for general switching & amplification 

- Well suited for portable application 

**==> picture [73 x 139] intentionally omitted <==**

**----- Start of picture text -----**<br>
February 2008<br>C<br>E<br>B<br>Marking : A06<br>SOT-523F<br>**----- End of picture text -----**<br>


- As complementary type, NPN  MMBT3904T is recommended 

## **Absolute Maximum Ratings** Ta = 25°C unless otherwise noted 

|**Absolute Maximum Ratings**|**Absolute Maximum Ratingsgss**Ta = 25°C unless otherwise noteda = 25°C unless otherwise noted= 25°C unless otherwise noted|Ta = 25°C unless otherwise noteda = 25°C unless otherwise noted= 25°C unless otherwise noted||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VCBO|Collector-Base Voltage|-40|V|
|VCEO|Collector-Emitter Voltage|-40|V|
|VEBO|Emitter-Base Voltage|-5|V|
|IC|Collector Current|200|mA|
|TJ|Junction Temperature|150|°C|
|TSTG|Storage Temperature Range|-55 ~ 150|°C|



- 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 

## **Thermal Characteristics*** Ta=25°C unless otherwise noted 

|**Symbol**|**Parameter**|**Max**|**Unit**|
|---|---|---|---|
|PC|Collector Power Dissipation, byRθJA|250|mW|
|RθJA|Thermal Resistance, Junction to Ambient|500|°C/W|



- Minimum land pad. 

|**Electrical Characteristics***|**Electrical Characteristics***Ta=25°C unless otherwise noted|unless otherwise noted||||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Condition**|**Min.**|**Max.**|**Unit**|
|BVCBO<br>~~a ~~|Collector-Base Breakdown Voltage<br> ~~a~~|IC = -10μA, IE= 0<br>~~GG~~|-40<br>~~GG~~|~~GG~~|V<br>~~GG~~|
|BVCEO<br>~~a ~~|Collector-Emitter Breakdown Voltage<br> ~~a~~|IC = -1mA, IB= 0<br>~~GG~~|40<br>~~GG~~|~~GG~~|V<br>~~GG~~|
|BVEBO<br>~~a ~~|Emitter-Base Breakdown Voltage<br> ~~a~~|IE= -10μA, IC = 0<br>~~GG~~|-5<br>~~GG~~|~~GG~~|V<br>~~GG~~|
|ICEX|Collector Cut-off Current|VCE= -30V, VEB(OFF) =-0.3V||-50|nA|
|hFE|DC Current Gain|VCE= 1V, IC=- 0.1mA<br>VCE= 1V, IC= -1mA<br>VCE= 1V, IC= -10mA<br>VCE= 1V, IC= -50mA<br>VCE= 1V, IC = -100mA|60<br>80<br>100<br>60<br>30|300||
|VCE(sat)|Collector-Emitter Saturation Voltage|IC= -10mA, IB= -1mA<br>IC = -50mA, IB= -5mA||-0.25<br>-0.4|V<br>V|
|VBE(sat)|Base-Emitter Saturation Voltage|IC= -10mA, IB= -1mA<br>IC = -50mA, IB= -5mA|-0.65|-0.85<br>-0.95|V<br>V|
|fT<br>~~a ~~|Current Gain Bandwidth Product<br> ~~a~~|VCE= -20V, IC = -10mA, f = 100MHz<br>~~GG~~|250<br>~~GG~~|~~GG~~|MHz<br>~~GG~~|
|Cob<br>~~a ~~|Output Capacitance<br> ~~a~~|VCB= -5V, IE= 0,  f = 1MHz<br>~~GG~~|~~GG~~|7.0<br>~~GG~~|pF<br>~~GG~~|
|Cib<br>~~a ~~<br>~~ee~~<br>~~ee~~|Input Capacitance<br> ~~a~~|VEB= -0.5V, IC = 0,  f = 1MHz<br>~~GG~~|~~GG~~<br>~~ee~~|15<br>~~GG~~<br>~~ee~~<br>~~ee~~|pF<br>~~GG~~<br>~~ee~~<br>~~ee~~|
|td<br>~~ee~~<br>~~ee~~<br>~~ee~~|DelayTime|VCC= -3V, IC= -10mA<br>IB1=- IB2= -1mA|~~ee~~|35<br>~~ee~~<br>~~ee~~<br>~~ee ee~~|ns<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|tr<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Rise Time||~~ee~~<br>~~ee~~|35<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee ee~~<br>~~**ee**~~|ns<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|ts<br>~~ee~~<br>~~ee~~<br>~~ee~~|Storage Time||~~ee~~|225<br>~~ee ~~<br>~~ee ee~~<br>~~ee~~<br>~~**ee**~~|ns<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|tf<br>~~ee~~<br>~~ee~~|Fall Time||~~ee~~|75<br>~~ee ee~~<br>~~**ee**~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|



- DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2% 

© 2007 Fairchild Semiconductor Corporation MMBT3906T Rev. 1.0.0 

www.fairchildsemi.com 

1 

## **Typical Performance Characteristics** 

**==> picture [124 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 1.  DC Current Gain<br>**----- End of picture text -----**<br>


## **Figure 2. Collector-Emitter Saturation Voltage** 

**==> picture [459 x 564] intentionally omitted <==**

**----- Start of picture text -----**<br>
TJ=125 TJo=75 C oC Vce=1V 1000 Ic=10*Ib<br>TJ=25 oC<br>100 TJ=-25 oC TJ=125 oC<br>TJ=75 oC<br>100 TJ=25 oC<br>TJ=-25 oC<br>10<br>1 10 100 10 100<br>Collector Current, [mA] Collector Current, [mA]<br>Figure 3. Base- Emitter Saturation Voltage Figure 4. Collector- Base Leakage Current<br>100<br>Ic=10*Ib<br>TJ=25 oC TJ=-25 oC<br>1000<br>TJ=75 oC TJ=125 oC<br>TJ=125 oC 10<br>TJ=75 oC<br>TJ=25 oC<br>100 1 TJ=-25 oC<br>10 100 10 20 30 40<br>Collector Current, [mA] Base-Collector Revere Voltage, [V]<br>Figure 5. Collector- Base Capacitance  Figure 6. Power Derating<br>12 300<br>f=1mhz<br>250<br>11<br>200<br>9<br>150<br>8 100<br>50<br>6<br>0<br>0 5 10 0 25 50 75 100 125 150<br>Base- Collector Reverse Voltage, Vcb[V] Ambient Temperature, Ta[oC]<br>Current Gain<br>Collector-Emitter Voltage,[mV]<br>Base- Emitter Voltage,[mV]<br>Base-Collector Leakage Current,[nA]<br>[pF]<br>ob<br>Power Dissipation, [mW]<br>Base- Collector Juntion Capacitance, C<br>**----- End of picture text -----**<br>


© 2007 Fairchild Semiconductor Corporation MMBT3906T Rev. 1.0.0 

www.fairchildsemi.com 

2 

## **Package Dimensions** 

## **SOT-523F** 

- Case : SOT-523F 

- Case Material(Molded Plastic): KTMC1060SC 

- UL Flammability classification rating : “V0” 

- Moisture Sensitivity level per JESD22-A1113B : MSL 1 

- Lead terminals solderable per MIL-STD7502026 /JESD22A121 

- Lead Free Plating : Pure Tin(Matte) 

Dimensions in Millimeters 

© 2007 Fairchild Semiconductor Corporation MMBT3906T Rev. 1.0.0 

www.fairchildsemi.com 

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## **TRADEMARKS** 

The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 

|ACEx®<br>Build it Now™<br>CorePLUS™<br>_CROSSVOLT_™<br>CTL™<br>Current Transfer Logic™<br>EcoSPARK®<br>Fairchild®<br>Fairchild Semiconductor®<br>FACT Quiet Series™<br>FACT®<br>FAST®<br>FastvCore™<br>FPS™<br>FRFET®<br>f°|Green FPS™<br>Green FPS™ e-Series™<br>GTO™<br>_i-Lo_™<br>IntelliMAX™<br>ISOPLANAR™<br>MegaBuck™<br>MICROCOUPLER™<br>MicroFET™<br>MicroPak™<br>MillerDrive™<br>Motion-SPM™<br>OPTOLOGIC®<br>OPTOPLANAR®<br>®<br>PDP-SPM™|Power247®<br>POWEREDGE®<br>Power-SPM™<br>PowerTrench®<br>Programmable Active Droop™<br>QFET®<br>QS™<br>QT Optoelectronics™<br>Quiet Series™<br>RapidConfigure™<br>SMART START™<br>SPM®<br>STEALTH™<br>SuperFET™<br>SuperSOT™-3<br>SuperSOT™-6|SuperSOT™-8<br>SyncFET™<br>The Power Franchise®<br>TinyBoost™<br>TinyBuck™<br>TinyLogic®<br>TINYOPTO™<br>TinyPower™<br>TinyPWM™<br>TinyWire™<br>µSerDes™<br>UHC®<br>UniFET™<br>VCX™<br>the<br>.<br>Pranchse|
|---|---|---|---|
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## **DISCLAIMER** 

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 

## **LIFE SUPPORT POLICY** 

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 

As used herein: 

1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, or device or system whose failure to perform can be reasonably (b) support or sustain life, and (c) whose failure to perform expected to cause the failure of the life support device or when properly used in accordance with instructions for use system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. 

## **PRODUCT STATUS DEFINITIONS Definition of Terms** 

|**Definition of Terms**|||
|---|---|---|
|**Datasheet Identification**|**Product Status**|**Definition**|
|Advance Information|Formative or In Design|This datasheet contains the design specifications for product development.<br>Specifications may change in any manner without notice.|
|Preliminary|First Production|This datasheet contains preliminary data; supplementary data will be pub-<br>lished at a later date. Fairchild Semiconductor reserves the right to make<br>changes at any time without notice to improve design.|
|No Identification Needed|Full Production|This datasheet contains final specifications. Fairchild Semiconductor reserves<br>the right to make changes at any time without notice to improve design.|
|Obsolete|Not In Production|This datasheet contains specifications on a product that has been discontin-<br>ued by Fairchild semiconductor. The datasheet is printed for reference infor-<br>mation only.|



Rev. I31 

© 2007 Fairchild Semiconductor Corporation MMBT3906T Rev. 1.0.0 

www.fairchildsemi.com 

4 



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