# Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 200 mA, 150 mW, SOT-323, Surface Mount ![Product image](https://novapart.co/image/farnell:2317829/) **URL**: https://novapart.co/products/MMBT3904WT1G/bipolar-bjt-single-transistor-general-purpose-npn **SKU**: MMBT3904WT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.0210 **Stock**: 10+ ## Description Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:150mW; DC Collector Current:200mA; DC Current Gain hFE:40hFE; ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | AEC-Q101 | | Power Dissipation | 150mW | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN | | Transition Frequency | 300MHz | | Transistor Case Style | SOT-323 | | Dc Current Gain Hfe Min | 40hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 200mA | | Collector Emitter Voltage Max | 40V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2317829/) ## MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP ## General Purpose Transistors **NPN and PNP Silicon** ## **www.onsemi.com** **==> picture [75 x 89] intentionally omitted <==** **----- Start of picture text -----**
COLLECTOR
3
1
BASE
& )
2
EMITTER
**----- End of picture text -----**
These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. ## **Features** - S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable **==> picture [470 x 286] intentionally omitted <==** **----- Start of picture text -----**
||||||||| |---|---|---|---|---|---|---|---| |•|These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS|3|SC−70 (SOT−323)| |CASE 419| |Compliant|1| |&|2|STYLE 3| |MAXIMUM RATINGS| |Rating|Symbol|Value|Unit| |MARKING DIAGRAM| |Collector−Emitter Voltage|VCEO|Vdc| |MMBT3904WT1, SMMBT3904WT1|40| |MMBT3906WT1, SMMBT3906WT1|−40| |xx M| |Collector−Base Voltage|VCBO|Vdc| |MMBT3904WT1, SMMBT3904WT1|60| |MMBT3906WT1, SMMBT3906WT1|−40|1| |Emitter−Base Voltage|VEBO|Vdc|xx|= AM for MMBT3904WT1,| |MMBT3904WT1, SMMBT3904WT1|6.0|SMMBT3904WT| |MMBT3906WT1, SMMBT3906WT1|−5.0|= 2A for MMBT3906WT1,| |SMMBT3906WT1| |Collector Current − Continuous|IC|mAdc|M|= Date Code*| |MMBT3904WT1, SMMBT3904WT1|200| |MMBT3906WT1, SMMBT3906WT1|−200|=|Pb−Free Package| |os| |(Note: Microdot may be in either location)| |THERMAL CHARACTERISTICS| |*Date Code orientation may vary depending up-| |Characteristic|Symbol|Max|Unit|on manufacturing location.| |Total Device Dissipation (Note 1)|PD|150|mW| |@TA = 25|°|C| |ORDERING INFORMATION| |Thermal Resistance, Junction−to−Ambient|R|JA|833|°|C/W| |Junction and Storage Temperature|TJ, Tstg|−55 to +150|°|C|Device|Package|Shipping| **----- End of picture text -----**
*Date Code orientation may vary depending upon manufacturing location. **ORDERING INFORMATION Device Package Shipping**[†] MMBT3904WT1G, SC−70/ 3000 / Tape & SMMBT3904WT1G SOT−323 Reel (Pb−Free) MMBT3906WT1G, SC−70/ 3000 / Tape & SMMBT3906WT1G SOT−323 Reel (Pb−Free) ~~=a~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2015 **November, 2015 − Rev. 9** **MMBT3904WT1/D** ## **MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||| |Collector−Emitter Breakdown Voltage (Note 2)
(IC= 1.0 mAdc, IB= 0)
MMBT3904WT1, SMMBT3904WT1
(IC= −1.0 mAdc, IB= 0)
MMBT3906WT1, SMMBT3906WT1|V(BR)CEO|40
−40|−
−|Vdc| |Collector−Base Breakdown Voltage
(IC= 10�Adc, IE= 0)
MMBT3904WT1, SMMBT3904WT1
(IC= −10�Adc, IE= 0)
MMBT3906WT1, SMMBT3906WT1|V(BR)CBO|60
−40|−
−|Vdc| |Emitter−Base Breakdown Voltage
(IE= 10�Adc, IC= 0)
MMBT3904WT1, SMMBT3904WT1
(IE= −10�Adc, IC= 0)
MMBT3906WT1, SMMBT3906WT1|V(BR)EBO|6.0
−5.0|−
−|Vdc| |Base Cutoff Current
(VCE= 30 Vdc, VEB= 3.0 Vdc)
MMBT3904WT1, SMMBT3904WT1
(VCE= −30 Vdc, VEB= −3.0 Vdc)
MMBT3906WT1, SMMBT3906WT1|IBL|−
−|50
−50|nAdc| |Collector Cutoff Current
(VCE= 30 Vdc, VEB= 3.0 Vdc)
MMBT3904WT1, SMMBT3904WT1
(VCE= −30 Vdc, VEB= −3.0 Vdc)
MMBT3906WT1, SMMBT3906WT1|ICEX|−
−|50
−50|nAdc| |**ON CHARACTERISTICS**(Note 2)||||| |DC Current Gain
(IC= 0.1 mAdc, VCE= 1.0 Vdc)
MMBT3904WT1, SMMBT3904WT1
(IC= 1.0 mAdc, VCE= 1.0 Vdc)
(IC= 10 mAdc, VCE= 1.0 Vdc)
(IC= 50 mAdc, VCE= 1.0 Vdc)
(IC= 100 mAdc, VCE= 1.0 Vdc)
(IC= −0.1 mAdc, VCE= −1.0 Vdc)
MMBT3906WT1, SMMBT3906WT1
(IC= −1.0 mAdc, VCE= −1.0 Vdc)
(IC= −10 mAdc, VCE= −1.0 Vdc)
(IC= −50 mAdc, VCE= −1.0 Vdc)
(IC= −100 mAdc, VCE= −1.0 Vdc)|hFE|40
70
100
60
30
60
80
100
60
30|−
−
300
−
−
−
−
300
−
−|−| |Collector−Emitter Saturation Voltage
(IC= 10 mAdc, IB= 1.0 mAdc)
MMBT3904WT1, SMMBT3904WT1
(IC= 50 mAdc, IB= 5.0 mAdc)
(IC= −10 mAdc, IB= −1.0 mAdc)
MMBT3906WT1, SMMBT3906WT1
(IC= −50 mAdc, IB= −5.0 mAdc)|VCE(sat)|−
−
−
−|0.2
0.3
−0.25
−0.4|Vdc| |Base−Emitter Saturation Voltage
(IC= 10 mAdc, IB= 1.0 mAdc)
MMBT3904WT1, SMMBT3904WT1
(IC= 50 mAdc, IB= 5.0 mAdc)
(IC= −10 mAdc, IB= −1.0 mAdc)
MMBT3906WT1, SMMBT3906WT1
(IC= −50 mAdc, IB= −5.0 mAdc)|VBE(sat)|0.65
−
−0.65
−|0.85
0.95
−0.85
−0.95|Vdc| 2. Pulse Test: Pulse Width � 300 � s; Duty Cycle � 2.0%. **www.onsemi.com** **2** ## **MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP** **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) (Continued) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted) (Continued)|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted) (Continued)||||| |---|---|---|---|---|---| |**Characteristic**||**Symbol**|**Min**|**Max**|**Unit**| |**SMALL−SIGNAL CHARACTERISTICS**|||||| |Current−Gain − Bandwidth Product
(IC= 10 mAdc, VCE= 20 Vdc, f = 100 MHz)
MMBT3904WT1, SMMBT3904WT1
(IC= −10 mAdc, VCE= −20 Vdc, f = 100 MHz)
MMBT3906WT1, SMMBT3906WT1||fT|300
250|−
−|MHz| |Output Capacitance
(VCB= 5.0 Vdc, IE= 0, f = 1.0 MHz)
MMBT3904WT1, SMMBT3904WT1
(VCB= −5.0 Vdc, IE= 0, f = 1.0 MHz)
MMBT3906WT1, SMMBT3906WT1||Cobo|−
−|4.0
4.5|pF| |Input Capacitance
(VEB= 0.5 Vdc, IC= 0, f = 1.0 MHz)
MMBT3904WT1, SMMBT3904WT1
(VEB= −0.5 Vdc, IC= 0, f = 1.0 MHz)
MMBT3906WT1, SMMBT3906WT1||Cibo|−
−|8.0
10.0|pF| |Input Impedance
(VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1, SMMBT3904WT1
(VCE= −10 Vdc, IC= −1.0 mAdc, f = 1.0 kHz)
MMBT3906WT1, SMMBT3906WT1||hie|1.0
2.0|10
12|k�| |Voltage Feedback Ratio
(VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1, SMMBT3904WT1
(VCE= −10 Vdc, IC= −1.0 mAdc, f = 1.0 kHz)
MMBT3906WT1, SMMBT3906WT1||hre|0.5
0.1|8.0
10|X 10−4| |Small−Signal Current Gain
(VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1, SMMBT3904WT1
(VCE= −10 Vdc, IC= −1.0 mAdc, f = 1.0 kHz)
MMBT3906WT1, SMMBT3906WT1||hfe|100
100|400
400|−| |Output Admittance
(VCE= 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1, SMMBT3904WT1
(VCE= −10 Vdc, IC= −1.0 mAdc, f = 1.0 kHz)
MMBT3906WT1, SMMBT3906WT1||hoe|1.0
3.0|40
60|�mhos| |Noise Figure
(VCE= 5.0 Vdc, IC= 100�Adc, RS= 1.0 k�, f = 1.0 kHz)
MMBT3904WT1, SMMBT3904WT1
(VCE= −5.0 Vdc, IC= −100�Adc, RS= 1.0 k�, f = 1.0 kHz)
MMBT3906WT1, SMMBT3906WT1||NF|−
−|5.0
4.0|dB| |**SWITCHING CHARACTERISTICS**|||||| |**Characteristic**|**Condition**|**Symbol**|**Min**|**Max**|**Unit**| |Delay Time|(VCC= 3.0 Vdc, VBE= −0.5 Vdc)
MMBT3904WT1, SMMBT3904WT1
(VCC= −3.0 Vdc, VBE= 0.5 Vdc)
MMBT3906WT1, SMMBT3906WT1|td|−
−|35
35|ns| |Rise Time|(IC= 10 mAdc, IB1= 1.0 mAdc)
MMBT3904WT1, SMMBT3904WT1
(IC= −10 mAdc, IB1= −1.0 mAdc)
MMBT3906WT1, SMMBT3906WT1|tr|−
−|35
35|| |Storage Time|(VCC= 3.0 Vdc, IC= 10 mAdc)
MMBT3904WT1, SMMBT3904WT1
(VCC= −3.0 Vdc, IC= −10 mAdc)
MMBT3906WT1, SMMBT3906WT1|ts|−
−|200
225|ns| |Fall Time|(IB1= IB2= 1.0 mAdc)
MMBT3904WT1, SMMBT3904WT1
(IB1= IB2= −1.0 mAdc)
MMBT3906WT1, SMMBT3906WT1|tf|−
−|50
75|| **www.onsemi.com** **3** ## **MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1** **==> picture [486 x 99] intentionally omitted <==** **----- Start of picture text -----**
+3 V +3 V
DUTY CYCLE = 2% 10 < t1 < 500 �s t1
+10.9 V
300 ns +10.9 V 275 DUTY CYCLE = 2% 275
10 k 10 k
0
-�0.5 V
< 1 ns CS < 4 pF* 1N916 CS < 4 pF*
-�9.1 V
< 1 ns
**----- End of picture text -----**
* Total shunt capacitance of test jig and connectors **Figure 1. Delay and Rise Time Equivalent Test Circuit** **Figure 2. Storage and Fall Time Equivalent Test Circuit** **www.onsemi.com** **4** ## **MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP** ## **MMBT3904WT1, SMMBT3904WT1** ## **TYPICAL TRANSIENT CHARACTERISTICS** **==> picture [489 x 633] intentionally omitted <==** **----- Start of picture text -----**
TJ = 25°C
TJ = 125°C
500 500
300 IC/IB = 10 300 VCC = 40 V
200 200 IC/IB = 10
100 100
70 tr @ VCC = 3.0 V 70
50 50
30 30
40 V
20 20
15 V
10 MMBT3904WT1 10
MMBT3904WT1
7 td @ VOB = 0 V 2.0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 3. Turn−On Time Figure 4. Rise Time
500 500
′
300 t s = ts - [1] /8 tf 300 VCC = 40 V
200 IC/IB = 20 IC/IB = 10 IB1 = IB2 200 IB1 = IB2
IC/IB = 20
100 100
70 70
50 IC/IB = 20 50
30 IC/IB = 10 30 IC/IB = 10
20 20
10 10
MMBT3904WT1 MMBT3904WT1
7 7
5 5 2 0 0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Storage Time Figure 6. Fall Time
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25 ° C, Bandwidth = 1.0 Hz)
12 14
SOURCE RESISTANCE = 200 � f = 1.0 kHz
10 IC = 1.0 mA 12 IC = 1.0 mA
10 IC = 0.5 mA
8 SOURCE RESISTANCE = 200 �
IC = 0.5 mA IC = 50 �A
8
6
SOURCE RESISTANCE = 1.0 k IC = 100 �A
IC = 50 �A 6
4
4
2
SOURCE RESISTANCE = 500 � 2
IC = 100 �A MMBT3904WT1 MMBT3904WT1
0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS)
Figure 7. Noise Figure Figure 8. Noise Figure
TIME (ns)
r
t , RISE TIME (ns)
f
t , FALL TIME (ns)
t , STORAGE TIME (ns)′s
NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB)
**----- End of picture text -----**
**www.onsemi.com** **5** ## **MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1** ## **h PARAMETERS** (VCE = 10 Vdc, f = 1.0 kHz, TA = 25 ° C) **==> picture [489 x 364] intentionally omitted <==** **----- Start of picture text -----**
300 100
MMBT3904WT1 50 MMBT3904WT1
200
20
10
100
70 5
50
2
30 1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 9. Current Gain Figure 10. Output Admittance
20 10
7.0
10 MMBT3904WT1 MMBT3904WT1
5.0
5.0
3.0
2.0
2.0
1.0
1.0
0.5
0.7
0.2 0.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
�
fe
h , CURRENT GAIN
oe
h , OUTPUT ADMITTANCE ( mhos)
-4
ie
h , INPUT IMPEDANCE (k OHMS)
re
h , VOLTAGE FEEDBACK RATIO (X 10 )
**----- End of picture text -----**
**Figure 11. Input Impedance** **Figure 12. Voltage Feedback Ratio** **TYPICAL STATIC CHARACTERISTICS** **==> picture [487 x 171] intentionally omitted <==** **----- Start of picture text -----**
1000
VCE = 1 V
TJ = 150°C
25°C
-�55°C
100
MMBT3904WT1
10
1.0 10 100 1000
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN
**----- End of picture text -----**
**Figure 13. DC Current Gain** **www.onsemi.com** **6** ## **MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1** **==> picture [491 x 586] intentionally omitted <==** **----- Start of picture text -----**
1.0
MMBT3904WT1 T J = 25°C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.4
0.2
0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
Figure 14. Collector Saturation Region
0.9 1.4
0.8 IC/IB = 10 IC/IB = 10
1.2
0.7 150 ° C
0.6 25 ° C 1.0
0.5 −55 ° C
0.8
0.4 −55 ° C 25 ° C
0.3 0.6
0.2 150 ° C
0.4
0.1
0 0.2
0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 15. Collector Emitter Saturation Voltage Figure 16. Base Emitter Saturation Voltage vs.
vs. Collector Current Collector Current
1.4
VCE = 1 V
1.2
1.0
−55 ° C
0.8
25 ° C
0.6
0.4 150 ° C
0.2
0.0001 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A)
CE
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
, BASE−EMITTER
, COLLECTOR−EMITTER
BE(sat)
V
SATURATION VOLTAGE (V) SATURATION VOLTAGE (V)
CE(sat)
V
, BASE−EMITTER VOLTAGE (V)
BE(on)
V
**----- End of picture text -----**
**Figure 17. Base Emitter Voltage vs. Collector Current** **www.onsemi.com** **7** ## **MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1** **==> picture [242 x 170] intentionally omitted <==** **----- Start of picture text -----**
1.0
MMBT3904WT1
0.5 +25°C TO +125°C
�VC FOR VCE(sat)
0 -�55°C TO +25°C
-�0.5
-�55°C TO +25°C
-�1.0
+25°C TO +125°C
-�1.5 �VB FOR VBE(sat)
-�2.0
0 20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA)
°
COEFFICIENT (mV/ C)
**----- End of picture text -----**
**Figure 18. Temperature Coefficients** **==> picture [233 x 197] intentionally omitted <==** **----- Start of picture text -----**
TJ = 25°C
TJ = 125°C
10
MMBT3904WT1
7.0
5.0
Cibo
3.0
2.0 Cobo
1.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40
REVERSE BIAS VOLTAGE (VOLTS)
CAPACITANCE (pF)
**----- End of picture text -----**
**Figure 19. Capacitance** **==> picture [490 x 173] intentionally omitted <==** **----- Start of picture text -----**
1000 1
100 mS 10 mS
VCE = 1 V
TA = 25 ° C 1 mS
1 S
0.1
100
Thermal Limit
0.01
10 0.001
0.1 1 10 100 1000 0.1 1 10 100
IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V)
PRODUCT (MHz)
, COLLECTOR CURRENT (A)
, CURRENT−GAIN−BANDWIDTH IC
fT
**----- End of picture text -----**
**Figure 20. Current Gain Bandwidth Product vs. Collector Current** **Figure 21. Safe Operating Area** **www.onsemi.com** **8** **MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP** ## **MMBT3906WT1, SMMBT3906WT1** **==> picture [484 x 106] intentionally omitted <==** **----- Start of picture text -----**
3 V 3 V
< 1 ns
+�9.1 V
275 275
< 1 ns
10 k 10 k
0
CS < 4 pF* 1N916 CS < 4 pF*
+10.6 V
300 ns 10 < t1 < 500 �s
DUTY CYCLE = 2% t1 10.9 V
DUTY CYCLE = 2%
**----- End of picture text -----**
* Total shunt capacitance of test jig and connectors **Figure 22. Delay and Rise Time Equivalent Test Circuit** **Figure 23. Storage and Fall Time Equivalent Test Circuit** ## **TYPICAL TRANSIENT CHARACTERISTICS** TJ = 25°C TJ = 125°C **==> picture [488 x 424] intentionally omitted <==** **----- Start of picture text -----**
500 500
300 MMBT3906WT1 IC/IB = 10 300 MMBT3906WT1 VCC = 40 V
200 200 IB1 = IB2
IC/IB = 20
100 100
70 70
50 tr @ VCC = 3.0 V 50
30 15 V 30 IC/IB = 10
20 20
40 V
10 2.0 V 10
7 7
td @ VOB = 0 V
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 24. Turn−On Time
Figure 25. Fall Time
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = −5.0 Vdc, TA = 25 ° C, Bandwidth = 1.0 Hz)
5.0 12
SOURCE RESISTANCE = 200 � f = 1.0 kHz IC = 1.0 mA
IC = 1.0 mA 10
4.0
SOURCE RESISTANCE = 200 � IC = 0.5 mA
IC = 0.5 mA 8.0
3.0
SOURCE RESISTANCE = 2.0 k
6.0
IC = 50 �A
2.0
4.0
IC = 50 �A
1.0 SOURCE RESISTANCE = 2.0 k 2.0 IC = 100 �A
IC = 100 �A
MMBT3906WT1
MMBT3906WT1
0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k�)
TIME (ns) f
t , FALL TIME (ns)
NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB)
**----- End of picture text -----**
**Figure 26.** **Figure 27.** **www.onsemi.com** **9** ## **MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3906WT1, SMMBT3906WT1** ## **h PARAMETERS** (VCE = −10 Vdc, f = 1.0 kHz, TA = 25 ° C) **==> picture [489 x 594] intentionally omitted <==** **----- Start of picture text -----**
300 100
MMBT3906WT1 70 MMBT3906WT1
50
200
30
100 20
70
10
50
7.0
30 5.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 28. Current Gain Figure 29. Output Admittance
20 10
MMBT3906WT1 7.0 MMBT3906WT1
10
7.0 5.0
5.0
3.0
3.0
2.0
2.0
1.0
0.7
1.0
0.5
0.7
0.3
0.2 0.5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 30. Input Impedance Figure 31. Voltage Feedback Ratio
STATIC CHARACTERISTICS
1000
VCE = 1 V
TJ = 150°C
25°C
-�55°C
100
MMBT3906WT1
10
1.0 10 100 1000
IC, COLLECTOR CURRENT (mA)
�
hfe, CURRENT GAIN
oe
h , OUTPUT ADMITTANCE ( mhos)
-4
)Ω
ie
h , INPUT IMPEDANCE (k
re
h , VOLTAGE FEEDBACK RATIO (X 10 )
hFE, DC CURRENT GAIN
**----- End of picture text -----**
**Figure 32. DC Current Gain** **www.onsemi.com** **10** ## **MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3906WT1, SMMBT3906WT1** **==> picture [491 x 586] intentionally omitted <==** **----- Start of picture text -----**
1.0
MMBT3906WT1 T J = 25°C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.4
0.2
0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
Figure 33. Collector Saturation Region
0.50 1.4
0.45 IC/IB = 10 IC/IB = 10
0.40 150 ° C 1.2
0.35
1.0
0.30 25 ° C −55 ° C
0.25 0.8
−55 ° C 25 ° C
0.20
0.6
0.15
0.10 150 ° C
0.4
0.05
0 0.2
0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 34. Collector Emitter Saturation Voltage Figure 35. Base Emitter Saturation Voltage vs.
vs. Collector Current Collector Current
1.4
VCE = 1 V
1.2
1.0
−55 ° C
0.8
25 ° C
0.6
0.4 150 ° C
0.2
0.0001 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A)
CE
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
, BASE−EMITTER
, COLLECTOR−EMITTER
BE(sat)
V
SATURATION VOLTAGE (V) SATURATION VOLTAGE (V)
CE(sat)
V
, BASE−EMITTER VOLTAGE (V)
BE(on)
V
**----- End of picture text -----**
**Figure 36. Base Emitter Voltage vs. Collector Current** **www.onsemi.com** **11** ## **MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3906WT1, SMMBT3906WT1** **==> picture [490 x 419] intentionally omitted <==** **----- Start of picture text -----**
TJ = 25°C
TJ = 125°C
1.0 10
MMBT3906WT1
7.0
0.5
�VC FOR VCE(sat) +25°C TO +125°C
0 -�55°C TO +25°C 5.0 Cobo
Cibo
-0.5 MMBT3906WT1 3.0
+25°C TO +125°C
-1.0
�VS FOR VBE(sat) -�55°C TO +25°C 2.0
-1.5
-2.0 1.0
0 20 40 60 80 100 120 140 160 180 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40
IC, COLLECTOR CURRENT (mA) REVERSE BIAS VOLTAGE (VOLTS)
Figure 37. Temperature Coefficients Figure 38. Capacitance
1000 1
100 mS 10 mS
VCE = 1 V
TA = 25 ° C
1 mS
0.1
1 S
100
Thermal Limit
0.01
10 0.001
0.1 1 10 100 1000 0.1 1 10 100
IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 39. Current Gain Bandwidth Product Figure 40. Safe Operating Area
C)°
CAPACITANCE (pF)
V, TEMPERATURE COEFFICIENTS (mV/
θ
PRODUCT (MHz)
, COLLECTOR CURRENT (A)
, CURRENT−GAIN−BANDWIDTH IC
fT
**----- End of picture text -----**
**Figure 39. Current Gain Bandwidth Product vs. Collector Current** **www.onsemi.com** **12** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [480 x 409] intentionally omitted <==** **----- Start of picture text -----**
SC−70 (SOT−323)
CASE 419−04
ISSUE N
® DATE 11 NOV 2008
SCALE 4:1
D NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
e1 2. CONTROLLING DIMENSION: INCH.
MILLIMETERS INCHES
3 DIM MIN NOM MAX MIN NOM MAX
A 0.80 0.90 1.00 0.032 0.035 0.040
HE E A1 0.00 0.05 0.10 0.000 0.002 0.004
1 2 A2 0.70 REF 0.028 REF
b 0.30 0.35 0.40 0.012 0.014 0.016
c 0.10 0.18 0.25 0.004 0.007 0.010
i an ) = D 1.80 2.10 2.20 0.071 0.083 0.087
j an ) ==
b E 1.15 1.24 1.35 0.045 0.049 0.053
e 1.20 1.30 1.40 0.047 0.051 0.055
e e1 0.65 BSC 0.026 BSC
L 0.20 0.38 0.56 0.008 0.015 0.022
H E 2.00 2.10 2.40 0.079 0.083 0.095
A A2 c
GENERIC
0.05 (0.002) L MARKING DIAGRAM
_ —_ He A1 , Joka
SOLDERING FOOTPRINT* XX M
0.65
oe 0.65 0.025 1 =
0.025
XX = Specific Device Code
M = Date Code
= Pb−Free Package
1.9 *This information is generic. Please refer to
oe
0.075 device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ ”,
0.9 may or may not be present.
0.035
0.7
0.028
SCALE 10:1 mm
~ ~ = inches
**----- End of picture text -----**
DATE 11 NOV 2008 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **==> picture [411 x 63] intentionally omitted <==** **----- Start of picture text -----**
STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:
CANCELLED PIN 1. ANODE PIN 1. BASE PIN 1. CATHODE PIN 1. ANODE
2. N.C. 2. EMITTER 2. CATHODE 2. ANODE
3. CATHODE 3. COLLECTOR 3. ANODE 3. CATHODE
STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10: STYLE 11:
PIN 1. EMITTER PIN 1. BASE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE
2. BASE 2. EMITTER 2. SOURCE 2. CATHODE 2. ANODE 2. CATHODE
3. COLLECTOR 3. COLLECTOR 3. DRAIN 3. CATHODE-ANODE 3. ANODE-CATHODE 3. CATHODE
**----- End of picture text -----**
Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42819B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SC−70 (SOT−323) PAGE 1 OF 1** ~~[_eo~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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