# Bipolar (BJT) Single Transistor, NPN, 40 V, 200 mA, 400 mW, X1-DFN1006, Surface Mount

![Product image](https://novapart.co/image/farnell:3127411RL/)

**URL**: https://novapart.co/products/MMBT3904LP-7B/bipolar-bjt-single-transistor-npn-40-v-200-ma-400
**SKU**: MMBT3904LP-7B
**Manufacturer**: DIODES INC.
**Price**: €0.0830
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:400mW; DC Collector Current:200mA; DC Current Gain hFE:30hFE; N

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 400mW |
| Dc Current Gain Hfe | 30hFE |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Dc Collector Current | 200mA |
| Power Dissipation Pd | 400mW |
| Transition Frequency | 300MHz |
| Transistor Case Style | X1-DFN1006 |
| Dc Current Gain Hfe Min | 30hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 200mA |
| Collector Emitter Voltage Max | 40V |
| Automotive Qualification Standard | - |
| Collector Emitter Voltage V(Br)Ceo | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3127411RL/)

**MMBT3904LP** ——— **40V NPN SMALL SIGNAL TRANSISTOR IN X1-DFN1006-3** 

## **Features** 

## **Mechanical Data** 

- BVCEO  > 40V 

- IC = 200mA High Collector Current 

- PD = 1000mW Power Dissipation 

- 0.60mm[2] Package Footprint, 13 Times Smaller than SOT23 

- 0.5mm Height Package Minimizing Off-Board Profile 

- Complementary PNP Type MMBT3906LP 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

   - Case: X1-DFN1006-3 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

      - Terminals: Finish  NiPdAu, Solderable per MIL-STD-202, Method 208 © **e4** 

   - Weight: 0.0008 grams (Approximate) 

- **Halogen and Antimony Free. "Green" Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q101, PPAP capable, and** 

**manufactured in IATF 16949 certified facilities), please refer** 

**to the related automotive grade (Q-suffix) part. A listing can be found at** 

**- https://www.diodes.com/products/automotive/automotive** 

**products/.** 

- **This part is qualified to JEDEC standards (as references in AEC-Q101) for High Reliability.** 

**https://www.diodes.com/quality/product-definitions/** 

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C<br>X1-DFN1006-3<br>B r7 B 7 17<br>'-- I<br>C<br>r- 7 I<br>E<br>1 _ Ll<br>E<br>Top View<br>Bottom View  Device Symbol  Device Schematic<br>**----- End of picture text -----**<br>


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X1-DFN1006-3<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|---|---|
||||||
|**Part Number**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity per Reel**|
|MMBT3904LP-7|1N|7|8mm|3,000|
|MMBT3904LP-7B|1N|7|8mm|10,000|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

1 of 7 **www.diodes.com** 

MMBT3904LP Document number: DS31835 Rev. 6 - 2 

October 2019 © Diodes Incorporated 

**MMBT3904LP** 

## **Marking Information** 

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**----- Start of picture text -----**<br>
1N From Date Code 1527 (YYWW),  1N<br>this changes to:<br>MMBT3904LP-7  Top View  Top View<br>Dot Denotes Collector Side Bar Denotes Base and Emitter Side<br>1N<br>MMBT3904LP-7B  Top View<br>Bar Denotes Base and Emitter Side 1N = Product Type Marking Code<br>$$¢¢¢44<br>1N  1N  1N<br>1N  1N  1N<br>1N  1N  1N<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|60|V|
|Collector-Emitter Voltage|VCEO|40|V|
|Emitter-Base Voltage|VEBO|6.0|V|
|Collector Current|IC|200|mA|
|Peak Collector Current|ICM|200|mA|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation|(Note 5)|PD|400|mW|
||(Note 6)||1000||
|Thermal Resistance, Junction to Ambient|(Note 5)|RJA|310|C/W|
||(Note 6)||120||
|Thermal Resistance, Junction to Lead|(Note 7)|RJL|120|°C/W|
|Operatingand Storage and Temperature Range||TJ, TSTG|-55 to +150|°C|



## **ESD Ratings** (Note 8) 

|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|Electrostatic Discharge - Human BodyModel|ESD HBM|4,000|V|3A|
|ElectrostaticDischarge- MachineModel|ESD MM|200|V|B|



- Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink. 

   6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper. 

   7. Thermal resistance from junction to solder-point (on the exposed collector pad). 

   8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

2 of 7 **www.diodes.com** 

MMBT3904LP Document number: DS31835 Rev. 6 - 2 

October 2019 © Diodes Incorporated 

**MMBT3904LP** 

## **Thermal Characteristics** 

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**----- Start of picture text -----**<br>
1 SSS D = 0.9<br>D = 0.7<br>D = 0.5<br>TT er ee<br>D = 0.3 A a ng ce<br>SIDES? MATAITIIMRTITIMGRTLTIGURIITIIGNRITLt An<br>0.1 PU TUITE CATT EAT TEI TEI CTI]<br>D = 0.1<br>SG 5s eastNEeeCUea aSe eee eee ee ee eee<br>Ye<br>D = 0.05 ea a a<br>Ea ee<br>D = 0.02<br>S e SPHU A AMA (GS; AIMMMATIVIAROEL T OMROTAT(GRAUTI/OROETIVORGTNTEMAII |<br>0.01<br>D = 0.01<br>SBS oes me ast ea ee a eeeaeee ee ee eee<br>D = 0.005 RJA(t) = r(t) * RJA<br>meme Re Con<br>a 2 RJA = 310°C/W mall<br>D = Single Pulse Duty Cycle, D = t1/ t2<br>0.001<br>0.000001 0.0001 0.01 1 100 10,000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 1 Transient Thermal Resistance<br>1,000<br>Single Pulse<br>RJA  = 310°C/W<br>100<br>RJA(t)  = r(t) * RJA<br>TJ - TA = P * RJA(t)<br>10<br>WAL<br>1<br>0.1<br>1E-06 0.0001 0.01 1 100 10,000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 2 Single Pulse Maximum Power Dissipation<br>, PEAK TRANSIENT POIWER (W)<br>(PK)<br>P<br>r(t), TRANSIENT THERMAL RESISTANCE<br>, PEAK TRANSIENT POWER (W)<br>PPK)(<br>**----- End of picture text -----**<br>


3 of 7 **www.diodes.com** 

MMBT3904LP Document number: DS31835 Rev. 6 - 2 

October 2019 © Diodes Incorporated 

**MMBT3904LP** 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**<br>~~_———_—_—————~~|**Symbol**<br>~~_———_—_—————~~|**Min**<br>~~_———_—_—————~~|**Max**<br>~~_———_—_—————~~|**Unit**<br>~~_———_—_—————~~|**Test Condition**<br>~~_———_—_—————~~|
|**OFF CHARACTERISTICS**<br>~~_———_—_—————~~||||||
|Collector-Base Breakdown Voltage<br>~~_———_—_—————~~|BVCBO<br>~~_———_—_—————~~<br>~~a~~|60<br>~~_———_—_—————~~<br>~~a~~|<br>~~_———_—_—————~~|V<br>~~_———_—_—————~~|IC= 10µA,IE= 0A<br>~~_———_—_—————~~|
|Collector-Emitter Breakdown Voltage(Note 9)<br>~~a~~|BVCEO<br>~~a~~<br>~~a~~|40<br>~~a~~<br>~~a~~|<br>~~a~~|V<br>~~a~~|IC= 1.0mA,IB= 0A<br>~~a~~|
|Emitter-Base Breakdown Voltage<br>~~a~~|BVEBO<br>~~a~~<br>~~a~~|6.0<br>~~a~~<br>~~a~~|<br>~~a~~|V<br>~~a~~|IE= 10µA,IC= 0A<br>~~a~~|
|Collector Cutoff Current<br>~~SS~~|ICEX<br>~~a~~<br>~~SS~~|<br>~~a~~<br>~~SS~~|50<br>~~SS~~|nA<br>~~SS~~|VCE= 30V,VEB(off)= 3.0V<br>~~SS~~|
|Base Cutoff Current<br>~~SS~~|IBL<br>~~SS~~|<br>~~SS~~|50<br>~~SS~~|nA<br>~~SS~~|VCE= 30V,VEB(off)= 3.0V<br>~~SS~~|
|**ON CHARACTERISTICS**(Note 9)<br>~~a~~<br>~~-~~||||||
|DC Current Gain<br>~~a~~<br>~~a~~|hFE<br>~~a~~<br>~~a~~|40<br>~~a~~<br>~~a~~|<br>~~a~~<br>~~a~~<br>~~-~~|<br>~~a~~<br>~~a~~<br>~~-~~<br>~~Pe~~<br>~~ee~~|IC=  100µA,VCE= 1.0V<br>~~a~~|
|||70<br>~~FT~~<br>~~a~~|<br>~~FT~~<br>~~a~~<br>~~-~~||IC=  1.0mA,VCE= 1.0V<br>~~PO~~<br>~~a~~|
|||100<br>~~a~~<br>~~a~~|300<br>~~a~~<br>~~-~~||IC=  10mA,VCE= 1.0V<br>~~Pe~~<br>~~a~~|
|||60<br>~~a~~<br>~~++~~|<br>~~a~~<br>~~-~~<br>~~++~~||IC=   50mA,VCE= 1.0V<br>~~a~~<br>~~Pe~~|
|||30<br>~~a~~<br>~~++~~<br>~~e ee~~|<br>~~a~~<br>~~-~~<br>~~++~~<br>~~ee~~||IC= 100mA, VCE= 1.0V<br>~~a~~<br>~~Pe~~<br>~~ee~~|
|Collector-Emitter Saturation Voltage<br>~~e~~<br>~~———~~|VCE(sat)<br>~~e~~~~**e**~~|<br>~~++~~<br>~~**e**~~<br>~~e ee~~<br>~~EE~~|0.20<br>~~-~~<br>~~++ ~~<br>~~**e**~~<br>~~ee~~|V<br>~~-~~<br> ~~Pe~~<br>~~**e**~~<br>~~ee~~<br>~~SE~~|IC= 10mA,IB= 1.0mA<br>~~Pe~~<br>~~**e**~~<br>~~ee~~|
||||0.30<br>~~**e**~~<br>~~ee~~<br>~~EE SE~~||IC= 50mA,IB= 5.0mA<br>~~**e**~~<br>~~ee~~<br>~~SE~~|
|Base-Emitter Saturation Voltage<br>~~i~~<br>~~———~~|VBE(sat)<br>~~i~~|0.65<br>~~e ee~~<br>~~i~~<br>~~EE~~|0.85<br>~~ee~~<br>~~i~~<br>~~EE SE~~|V<br>~~ee~~<br>~~i~~<br>~~SE~~|IC= 10mA,IB= 1.0mA<br>~~ee~~<br>~~i~~<br>~~SE~~|
|||<br>~~i~~<br>~~EE~~|0.95<br>~~i~~<br>~~EE SE~~||IC= 50mA,IB= 5.0mA<br>~~i~~<br>~~SE~~|
|**SMALL SIGNAL CHARACTERISTICS**<br>~~EE SE~~<br>~~———~~||||||
|Output Capacitance<br>~~———~~<br>~~a~~<br>~~a~~|Cobo<br>~~a~~|<br>~~EE~~|4.0<br>~~EE SE~~|pF<br>~~SE~~|VCB= 5.0V,f = 1.0MHz,IE= 0A<br>~~SE~~|
|Input Capacitance<br>~~———~~<br>~~a~~<br>~~a————~~|Cibo<br>~~a~~|<br>~~EE~~|8.5<br>~~EE SE~~|pF<br>~~SE~~<br>~~ee~~|VEB= 0.5V,f = 1.0MHz,IC= 0A<br>~~SE~~<br>~~ee~~|
|Input Impedance<br>~~———~~<br>~~a~~<br>~~a————~~|hie<br>~~a~~|1.0<br>~~EE~~|10<br>~~EE SE~~|kΩ<br>~~SE~~<br>~~ee~~|VCE= 10V, IC= 1.0mA,<br>f = 1.0kHz<br>~~SE~~<br>~~ee~~<br>~~LLL~~|
|Voltage Feedback Ratio<br>~~a ~~<br>~~a————~~|hre<br> ~~a~~|0.5|8.0|x 10-4<br>~~ee~~||
|Small Signal Current Gain<br>~~————~~|hfe<br>~~LL~~|100<br>~~LL LLL~~|400<br>~~LLL~~|<br>~~ee~~<br>~~LLL~~||
|Output Admittance<br>~~————~~|hoe<br>~~LL~~|1.0<br>~~LL LLL~~|40<br>~~LLL~~|µs<br>~~ee~~<br>~~LLL~~||
|Current Gain-Bandwidth Product<br>~~————~~<br>~~Tn~~<br>~~a~~|fT<br>~~Tn~~<br>~~LL~~<br>~~a~~|300<br>~~Tn~~<br>~~LL LLL~~<br>~~eee~~|<br>~~Tn~~<br>~~LLL~~<br>~~eee~~|MHz<br>~~ee~~<br>~~Tn~~<br>~~LLL~~<br>~~eee~~|VCE= 20V, IC= 10mA,<br>f = 100MHz<br>~~ee~~<br>~~Tn~~<br>~~LLL~~|
|**SWITCHING CHARACTERISTICS**<br>~~LL LLL~~<br>~~——~~<br>~~a~~<br>~~eee~~||||||
|DelayTime<br>~~——~~<br>~~a~~|td<br>~~——~~<br>~~a~~|<br>~~——~~<br>~~eee~~|35<br>~~——~~<br>~~eee~~|ns<br>~~——~~<br>~~eee~~|VCC= 3.0V, IC= 10mA,<br>VBE(off)= 0.5V,IB1= 1.0mA<br>~~——~~|
|Rise Time<br>~~——~~<br>~~a~~|tr<br>~~——~~<br>~~a~~|<br>~~——~~<br>~~eee~~|35<br>~~——~~<br>~~eee~~|ns<br>~~——~~<br>~~eee~~||
|Storage Time<br>~~a~~<br>~~a~~|ts<br>~~a~~<br>~~a~~|<br>~~eee~~<br>~~a~~|200<br>~~eee~~<br>~~a~~|ns<br>~~eee~~<br>~~a~~|VCC= 3.0V, IC= 10mA,<br>IB1= -IB2= 1.0mA<br>~~a~~|
|Fall Time<br>~~a~~|tf<br>~~a~~|<br>~~a~~|50<br>~~a~~|ns<br>~~a~~||



4 of 7 **www.diodes.com** 

MMBT3904LP Document number: DS31835 Rev. 6 - 2 

October 2019 © Diodes Incorporated 

**MMBT3904LP** 

## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

**==> picture [483 x 649] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.14 400<br>0.12 IB = 2mA 350 T   = 150°CA V      = 1VCE<br>0.10 Tes IB = 1.6mA I [N] 300 a T   = 125°CA<br>| aes IB = 1.2mA G [A] T 250 S e T   = 85°CA ee HI<br>0.08 —<—— IB = 0.8mA NER aa<br>IB = 0.6mA RU 200 T   = 25°CA<br>0.06 = C T u TEN<br>Cae IB = 0.4mA CD 150 CO N<br>0.04 , F [E]<br>h 100 T   = -55°CA<br>a=eenenee IB = 0.2mA Da n<br>0.02<br>50<br>er CTT TTT<br>0 0<br>0 PEEL 1 TET 2 3 LE 4 5 1 10 100 \<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) I   , COLLECTOR CURRENT (mA)C<br>FiFi g.  4 Typical Collector Current 3 Fig. 4 Typical DC Current Gain vs. Collector Current<br>vs. Collector-Emitter Voltage<br>I   /I   = 20C    B<br>I   /I   = 10C    B 1<br>LT e cu<br>R<br>ET )<br>I [T] M ( [V)] EG 0.1 CM T   = 150°CA I [TTER] M-I [E] ( [V] G [E] Sei StalLUM LSeni T   = 150°CA p<br>R [-E] T [A] T   = 125°CA YY Hit //A<br>O LO T [OR] O [LTA] V T   = 125°CA<br>C [T] V<br>N<br>0.1<br>L [LE] C [O] , )TA( [S] T [IO] ART [U] AS SK’ T   = -55°CA T   = 25°CA T   = 85°CA [LLEC] CO, T [)] A( [S] EC T [ION] T [URA] AS mee T   = -55°CA LI T   = 25°CA T   = 85°CA<br>C [E] V<br>V<br>0.01<br>0.01 0.1 1 10 100<br>0.1 CE 1 CT 10 ) 100 = EE  HH<br>I   , COLLECTOR CURRENT (mA)C Fig. 6 Typical Collector-Emitter Saturation VoltageI   , COLLECTOR CURRENT (mA)C<br>Fig. 5 Typical Collector-Emitter Saturation Voltage vs. Collector Current<br>vs. Collector Current<br>1.1 1.1<br>Gain = 10<br>1.0 VCE = 5V 1.0<br>Pr Tee<br>0.9 0.9<br>My TL 1 aAP<br>0.8 T A T = -55°C A  = 150 癈 0.8 TTA A  = 150 = -55°C 癈<br>ert T  TT er LH<br>0.7 0.7<br>iaa lyeA<br>0.6 He" TTAA = 125 = 25°C 癈 eea 0.6 Calepie TAT = 125A = 25°C 癈 = AY<br>0.5 TE T A T = 85°C A  = 85 癈 0.5 wees: S TAT = 85A = 85°C 癈 N<br>TA = 125°CTA = 25 癈 T AA =  125°C25 癈<br>0.4 ee TA ill  = 150°CTA = -55 癈 r 0.4 ch Ea TT A A = 1=  \ -5 5 0 癈 °C<br>0.3<br>reali 1 10 CIA 100 0.3 fai ICHt<br>Fig. 8 Typical Base-Emitter Turn-On Voltage Fig. 7IC, COLLECTOR CURRENT (mA) 1 IC, COLLECTOR CURRENT (mA)10 100<br>vs. Collector Current FF ig.  9 Typical Base-Emitter Saturation Voltage8<br>vs. Collector Current<br>, COLLECTOR CURRENT (A)<br>IC<br>N VOLTAGE (V)<br>TURN-O<br>, BASE-EMITTER<br>V<br>BE(ON)<br>, DC CURRENT GAIN<br>FE<br>h<br>VOLTAGE (V)<br>VOLTAGE (V)<br>, COLLECTOR-EMITTER  SATURATION<br>, COLLECTOR-EMITTER  SATURATION<br>CE(sat)<br>CE(sat) V<br>V<br>VOLTAGE (V)<br> VOLTAGE (V)<br>N<br>TER  SATURATION<br>, BASE-EMITTER<br>, BASE-EMI<br>BE(on)<br>V BE(sat)<br>V<br>ER SATURATION VOLTAGE (V)<br>T<br>, BASE-EMIT<br>BE(SAT)<br>V<br>**----- End of picture text -----**<br>


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MMBT3904LP Document number: DS31835 Rev. 6 - 2 

October 2019 © Diodes Incorporated 

**MMBT3904LP** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**==> picture [342 x 207] intentionally omitted <==**

**----- Start of picture text -----**<br>
X1-DFN1006-3<br>A A1 X1-DFN1006-3<br>Dim  Min  Max Typ<br>ES = A  0.47  0.53 0.50<br>Seating Plane<br>A1  0.00 0.05 0.03<br>D b  0.10 0.20 0.15<br>Pin #1 ID b b2  0.45 0.55 0.50<br>D  0.95 1.075 1.00<br>E  0.55 0.675 0.60<br>e  -  -  0.35<br>aaee ===—- L1  0.20 0.30 0.25<br>E b2 e L2  0.20 0.30 0.25<br>L3 -  -  0.40<br>z  0.02  0.08 0.05<br>All Dimensions in mm<br>z<br>L2 L3 L1<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**X1-DFN1006-3** 

**==> picture [154 x 114] intentionally omitted <==**

**----- Start of picture text -----**<br>
Y C<br>Y1<br>G2<br>erEI<br>X G1<br>so X1<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|0.70|
|**G1**|0.30|
|**G2 **|0.20|
|**X**|0.40|
|**X1**|1.10|
|**Y**|0.25|
|**Y1**|0.70|



6 of 7 **www.diodes.com** 

MMBT3904LP Document number: DS31835 Rev. 6 - 2 

October 2019 © Diodes Incorporated 

**MMBT3904LP** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the        failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

MMBT3904LP Document number: DS31835 Rev. 6 - 2 

October 2019 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/MMBT3904LP-7B/bipolar-bjt-single-transistor-npn-40-v-200-ma-400)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/mmbt3904lp-7b/trans-npn-40v-0-2a-150deg-c-0/dp/3127411RL)
---

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