# Bipolar (BJT) Single Transistor, NPN, 40 V, 200 mA, 350 mW, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:4829884/)

**URL**: https://novapart.co/products/MMBT3904HRFG/bipolar-bjt-single-transistor-npn-40-v-200-ma-350
**SKU**: MMBT3904HRFG
**Manufacturer**: TAIWAN SEMICONDUCTOR
**Price**: €0.0400
**Stock**: 1000+
**Lead Time**: 141 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 350mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 300MHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 100hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 200mA |
| Collector Emitter Voltage Max | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4829884/)

**MMBT3904H** (amen Taiwan Semiconductor 

SEMICONDUCTOR(amen 

## **350mW, NPN Small Signal Transistor** 

## FEATURES 

- AEC-Q101 qualified 

- Low power loss, high efficiency 

- Ideal for automated placement 

- Moisture sensitivity level: level 1, per J-STD-020 

- RoHS Compliant 

- Halogen-free 

## APPLICATIONS 

- General switching and amplification 

**==> picture [167 x 135] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||
|---|---|---|
|KEY PARAMETERS|
|PARAMETER|VALUE|UNIT|
|VCBO|60|V|
|VCEO|40|V|
|VEBO|6|V|
|IC|200|mA|
|hFE|300|
|Configuration|Single die|

**----- End of picture text -----**<br>


## MECHANICAL DATA 

- Case: SOT-23 

- Molding compound meets UL 94V-0 flammability rating 

- Terminal: Matte tin plated leads, solderable per J-STD-002 

- Meet JESD 201 class 2 whisker test 

- Weight: 8.00mg (approximately) 

PACKAGE: SOT-23 PIN CONFIGURATION 

CIRCUIT DIAGRAM 

**==> picture [509 x 154] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||
|---|---|---|---|---|
|ABSOLUTE MAXIMUM RATINGS|(TA = 25°C unless otherwise noted)|
|PARAMETER|SYMBOL|VALUE|UNIT|
|Power dissipation|[(1)]|PD|350|mW|
|Collector-base voltage|VCBO|60|V|
|Collector-emitter voltage|VCEO|40|V|
|Emitter-base voltage|VEBO|6|V|
|Collector current|IC|200|mA|
|Junction temperature|TJ|-55 to +150|°C|
|Storage temperature|TSTG|-55 to +150|°C|

**----- End of picture text -----**<br>


## **Note:** 

1. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint 

1 Version: A2504 

@i$@i@$ai$ai **MMBT3904H** Taiwan Semiconductor 9 Eee}SEMICONDUCTOR A i$ $$$ 

|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|
|---|---|---|---|
|PARAMETER|SYMBOL|TYP|UNIT|
|Junction-to-ambient thermal resistance(1)|RӨJA|357|°C/W|



**Thermal Performance Note:** 

1. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint 

|ELECTRICAL SPECIFICATIONS(TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS(TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS(TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS(TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS(TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS(TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS(TA= 25°C unless otherwise noted)<br>~~a~~|
|---|---|---|---|---|---|---|
|PARAMETER|CONDITIONS|SYMBOL|MIN<br>~~ee~~|TYP<br>~~ee~~|MAX|UNIT|
|Collector-base<br>breakdown voltage<br>~~a~~|IC= 10μA, IE= 0A<br>~~a~~<br>~~ee~~|V(BR)CBO<br>~~a~~<br>~~ee~~|60<br>~~a~~<br>~~ee~~<br>~~ee~~|-<br>~~a~~<br>~~ee~~<br>~~ee~~|-<br>~~a~~<br>~~ee~~|V<br>~~a~~<br>~~ee~~|
|Collector-emitter<br>breakdown voltage|IC= 1mA, IB= 0A|V(BR)CEO|40<br>~~ee~~|-<br>~~ee~~|-|V|
|Emitter-base<br>breakdown voltage|IE= 10μA, IC= 0A|V(BR)EBO|6|-|-|V|
|Collector-base cut-off current<br>~~a~~|VCB= 60V, IE= 0A|ICBO|-|-|0.1|μA|
|Collector cut-off current<br>~~a~~<br>~~a~~|VCE= 30V, VEB(off)= 3V|ICEX|-|-|50|nA|
|Emitter-base cut-off current<br>~~a~~|VEB= 5V, IC= 0A<br>|IEBO|-|-|0.1|μA|
|DC current gain<br>~~a ~~|VCE= 1V, IC= 0.1mA<br> ~~a~~|hFE<br>~~ee~~<br>~~A~~|40|-|-|-|
||VCE= 1V, IC= 1mA<br>~~ee~~||70<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~||
||VCE= 1V, IC= 10mA<br>~~————~~||100<br>~~ee~~|-<br>~~ee~~|300<br>~~ee~~||
||VCE= 1V, IC= 50mA<br>~~————~~<br>~~———~~<br>~~a~~||60<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~||
||VCE= 1V, IC= 100mA<br>~~a~~||30|-|-||
|Collector-emitter<br>saturation voltage<br>~~ee~~<br>~~a~~|IC= 10mA, IB= 1mA<br>~~a~~<br>~~ee~~<br>~~**a**~~|VCE(sat)<br>~~A~~<br>~~ee~~<br>~~A~~<br>|-<br>~~ee~~|-<br>~~ee~~|0.2<br>~~ee~~|V<br>~~ee~~|
||IC= 50mA, IB= 5mA<br>~~ee~~<br>~~**a**~~<br>~~es~~||-<br>~~ee~~|-<br>~~ee~~|0.3<br>~~ee~~||
|Base-emitter<br>saturation voltage<br>~~a~~|IC= 10mA, IB= 1mA<br>~~**a**~~<br>~~es A~~|VBE(sat)<br>~~A~~<br>~~A~~|0.65|-|0.85|V|
||IC= 50mA, IB= 5mA<br>~~**a**~~<br>~~es A~~||-|-|0.95||
|Transition frequency|VCE= 20V, IC= 10mA,<br>f = 100MHz<br>~~es A~~|fT<br>~~A~~|300|-|-|MHz|
|Output capacitance|VCB= 5V, IE= 0A<br>f = 1MHz|Cobo|-|-|4|pF|
|Delaytime<br>~~a ee~~<br>~~OO~~|VCC= 3V, VBE= 0.5V,<br>IC= 10mA, IB1= 1mA<br>~~ee~~<br>~~OO~~<br>~~Oe~~|td<br>~~ee~~<br>~~a~~|-<br>~~ee~~<br>~~a~~|-<br>~~ee~~<br>~~a~~|35<br>~~ee~~<br>~~a~~|ns<br>~~ee~~<br>~~a~~|
|Rise time<br>~~a ee~~<br>~~OO~~<br>~~—~~||tr<br>~~ee~~<br>~~a~~<br>~~ee~~|-<br>~~ee~~<br>~~a~~<br>~~oe~~|-<br>~~ee~~<br>~~a~~<br>~~oe~~|35<br>~~ee~~<br>~~a~~|ns<br>~~ee~~<br>~~a~~|
|Storage time<br>~~OO~~<br>~~es~~<br>~~—~~|VCC= 3V, IC= 10mA,<br>IB1= IB2= 1mA<br>~~OO~~<br>~~es~~<br>~~Oe~~|ts<br>~~a~~<br>~~es~~<br>~~ee~~|-<br>~~a~~<br>~~es~~<br>~~oe~~|-<br>~~a~~<br>~~es~~<br>~~oe~~|200<br>~~a~~<br>~~es~~|ns<br>~~a~~<br>~~es~~|
|Fall time<br>~~es~~<br>~~—~~||tf<br>~~es~~<br>~~ee~~<br>~~a~~|-<br>~~es~~<br>~~oe~~<br>~~a~~|-<br>~~es~~<br>~~oe~~<br>~~a~~|50<br>~~es~~<br>~~a~~|ns<br>~~es~~<br>~~a~~|



2 Version: A2504 

000 **MMBT3904H** Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

## **Fig.1 Power Dissipation Curve** 

**==> picture [233 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
400350 fo<br>300250 Po} NE]<br>200 eee<br>150 NR<br>100 i Se<br>50<br>aN<br>0 PN<br>0 25 50 75 100 125 150<br>AMBIENT TEMPERATURE ( ° C)<br>POWER DISSIPATION (mW)<br>**----- End of picture text -----**<br>


**Fig.3 DC Current Gain vs. Collector Current** 

**==> picture [236 x 394] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>TJ=150 ° C VCE=1V<br>= TJ=25 N ° C H<br>100 TT TJ=-55 L ° C N<br>e e<br>i<br>LE LETTE EET ETE<br>10 UTNE LUVIN LEI<br>0.1 1 10 100 1000<br>IC, COLLECTOR CURRENT (mA)<br> Fig.5 Base-Emitter Saturation Voltage vs. Collector<br>Current<br>1.2<br>IC/IB=10<br>TJ=-55 ° C<br>CO I CO<br>0.9<br>c oe Pt Tt<br>i Ce TI<br>0.6 TJ=25 ° C<br>a ge ama<br>m g A= t l<br>0.3 TJ=150 ° C<br>errrA<br>0 Tn Coo<br>1 10 100 1000<br>IC, COLLECTOR CURRENT (mA)<br>, DC CURRENT GAIN<br>FE<br>h<br>, BASE-EMITTER<br>BE(SAT)<br>V<br>SATURATION VOLTAGE (V)<br>**----- End of picture text -----**<br>


**Fig.5 Base-Emitter Saturation Voltage vs. Collector Current** 

## **Fig.2 Typical Capacitance Characteristics** 

**==> picture [232 x 161] intentionally omitted <==**

**----- Start of picture text -----**<br>
14<br>Se f=1MHz<br>12<br>10 ee, |<br>8<br>6 eS Cibo<br>rr<br>4 S Siionee tees<br>e<br>2 Cobo<br>CUTS<br>0 Fee ee<br>0.1 1 10 100<br>REVERSE VOLTAGE (V)<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


## **Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current** 

**==> picture [235 x 395] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.3<br>IC/IB=10<br>TJ=150 °<br>0.2 AA<br>AE TJ=25 | ° UNA LETII<br>0.1 LTTE | ATI<br>°<br>“alSe || N TJ=-55 il<br>0 EAI LL ll<br>1 10 100 1000<br>IC, COLLECTOR CURRENT (mA)<br>     Fig.6 Base-Emitter Voltage vs. Collector Current<br>1.2<br>VCE=1V<br>TJ=-55 ° C<br>0.9 Cc<br>TT "y<br>eT ny elle<br>0.6 TJ=25 ° C<br>m g s<br>PT sy eeea<br>0.3 TJ=150 ° C<br>me TU uy LOU<br>0 Cnc<br>0.1 1 10 100 1000<br>IC, COLLECTOR CURRENT (mA)<br>, COLLECTOR-EMITTER<br>CE(SAT) SATURATION VOLTAGE (V)<br>V<br>, BASE-EMITTER VOLTAGE (V)<br>BE(ON)<br>V<br>**----- End of picture text -----**<br>


**Fig.6 Base-Emitter Voltage vs. Collector Current** 

3 Version: A2504 

**MMBT3904H** E———EEx~oEwEs Taiwan Semiconductor 

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## PACKAGE OUTLINE DIMENSIONS 

## **SOT-23** 

- 1AMFYW 

- 1 

- MARKING 

- — 1AM = Device marking F = Factory code Y = Year code W = Bi-Week code (A~Z) 

4 Version: A2504 

**MMBT3904H** (jig Taiwan Semiconductor 

SEMICONDUCTOR(jig 

## **Notice** 

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. 

Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. 

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

5 Version: A2504 



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---

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