# Bipolar (BJT) Single Transistor, NPN, 40 V, 200 mA, 435 mW, X2-DFN0806, Surface Mount

![Product image](https://novapart.co/image/farnell:3943277/)

**URL**: https://novapart.co/products/MMBT3904FA-7B/bipolar-bjt-single-transistor-npn-40-v-200-ma-435
**SKU**: MMBT3904FA-7B
**Manufacturer**: DIODES INC.
**Price**: €0.0900
**Stock**: 500+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 435mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 300MHz |
| Transistor Case Style | X2-DFN0806 |
| Dc Current Gain Hfe Min | 30hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 200mA |
| Collector Emitter Voltage Max | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943277/)

**MMBT3904FA** Cd 

**40V NPN SMALL SIGNAL TRANSISTOR IN DFN0806** 

## **Features** 

## **Mechanical Data** 

- BVCEO  > 40V 

- IC = 200mA high Collector Current 

- PD = 435mW Power Dissipation 

- 2 

- 0.48mm package footprint, 16 times smaller than SOT23 

- 0.4mm height package minimizing off-board profile 

- Complementary PNP Type MMBT3906FA 

- **Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)** 

   - Case: X2-DFN0806-3 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish  NiPdAu, Solderable per MIL-STD-202, Method 208 © **e4** 

   - Weight: 0.0008 grams (approximate) 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

**==> picture [416 x 120] intentionally omitted <==**

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X2-DFN0806-3  C<br>B<br>id a<br>B C<br>E<br>i _ L _I<br>E<br>Top View<br>Top View  Bottom View  Device Symbol  Device Schematic<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Product**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|---|---|---|---|---|
|MMBT3904FA-7B|1N|7|8mm|10,000|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

**1N** 1N = Product Type Marking Code Top View Bar Denotes Base and Emitter Side 

1 of 7 **www.diodes.com** 

MMBT3904FA Document number: DS36016 Rev. 1 - 2 

July 2013 © Diodes Incorporated 

**MMBT3904FA** 

## **Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|60|V|
|Collector-Emitter Voltage|VCEO|40|V|
|Emitter-Base Voltage|VEBO|6.0|V|
|Continuous Collector Current|IC|200|mA|
|Peak Pulse Collector Current|ICM|500|mA|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol **|**Value**|**Unit**|
|Power Dissipation(Note 5)|PD|435|mW|
|Thermal Resistance,Junction to Ambient(Note 5)|RJA|287|C/W|
|Thermal Resistance,Junction to Lead(Note 6)|RJL|150|C/W|
|Operatingand Storage and Temperature Range|TJ,TSTG|-55 to +150|C|



|**ESD Ratings **(Note 7)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol **|**Value**|**Unit**|**JEDEC Class**|
|ElectrostaticDischarge- Human BodyModel|ESD HBM|4,000|V|3A|
|ElectrostaticDischarge- MachineModel|ESD MM|200|V|B|



Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady state condition.  The entire exposed collector pad is attached to the heatsink. 6. Thermal resistance from junction to solder-point (on the exposed collector pad). 

7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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MMBT3904FA Document number: DS36016 Rev. 1 - 2 

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**MMBT3904FA** 

## **Thermal Characteristics and Derating Curves** 

**==> picture [240 x 181] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.45<br>0.40<br>0.35 PEN EEE EE EEE EE EE<br>PTR<br>0.30 a<br>0.25 EERERSERSE<br>FEE NGS<br>0.20 aaGSaGSGS<br>0.15<br>NeAA a Ge<br>0.10<br>ptaftaftft tT tt tN tN<br>0.05 EEE<br>0.00 rtrritstTfsetseststyseitit dtd]NS dNNS dN dN<br>0 20 40 60 80 100 120 140 160<br> Temperature (°C)<br>**----- End of picture text -----**<br>


**==> picture [518 x 389] intentionally omitted <==**

**----- Start of picture text -----**<br>
V<br>CE(sat) 0.40<br>Limited ~~ ™® Sy .<br>ZONING 0.35 PEN EEE EE EEE EE EE<br>PZ NRW KX PTR<br>100m Ys DC / 1s 7 MY A 0.30 a<br>TT TINY 0.25 EERERSERSE<br>Sa SPSS 100ms FEE NGS<br>PS SPONSES 0.20<br>a ee 10ms KANE aaGSaGSGS<br>0.15<br>Seell 1ms NAR ANN | NeAA a Ge<br>0.10<br>10m Single Pulse T =25°C Nal 100µs aN 0.05 ptaftaftft tT tt tN tN<br>amb pases EEE<br>ee 0.00 rtrritstTfsetseststyseitit dtd]NS dNNS dN dN<br>100m 1 10 0 20 40 60 80 100 120 140 160<br>VCE  Collector-Emitter Voltage (V)  Temperature (°C)<br>Safe Operating Area Derating Curve<br>300<br>275 T amb =25°C Lie 100 TM TM TTI Single Pulse I<br>250 T =25°C<br>amb<br>225<br>200 SEO sued NTH HT HE HEH Ht<br>OT a FONE HetRC<br>175 D=0.5<br>150 ail UN 10 Bi010880000<br>125<br>ED a SNS<br>100<br>D=0.2<br>75 | YF... Single Pulse 1 II 0<br>ee W/Alli ALT PUTTIN TES TTT TATE PT PET<br>50 ee D=0.05 Ah 1 UUM LTT SSA EIT LIM TM UT<br>25 D=0.1<br>0 eI CU TI PA EE EE Eo<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>  Collector Current (A)<br>C<br>I<br> Max Power Dissipation (W)<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


**Transient Thermal Impedance** 

**Pulse Power Dissipation** 

3 of 7 **www.diodes.com** 

MMBT3904FA Document number: DS36016 Rev. 1 - 2 

July 2013 © Diodes Incorporated 

**MMBT3904FA** 

## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS**<br>~~ee~~||||||
|Collector-Base Breakdown Voltage<br>~~ee~~|BVCBO<br>~~ee~~<br>~~I~~|60<br>~~ee~~<br>~~TD OI~~|<br>~~ee~~<br>~~OI~~|V<br>~~ee~~<br>~~(OO~~|IC= 10A, IE= 0<br>~~ee~~<br>~~(OO~~|
|Collector-Emitter Breakdown Voltage (Note 8)<br>~~I~~|BVCEO<br>~~I~~<br>~~I~~|40<br>~~I~~<br>~~TD OI~~|<br>~~I~~<br>~~OI~~|V<br>~~I~~<br>~~(OO~~|IC= 1.0mA, IB= 0<br>~~I~~<br>~~(OO~~|
|Emitter-Base Breakdown Voltage<br>~~ee~~|BVEBO<br>~~I~~<br>~~ee~~|6.0<br>~~TD OI~~<br>~~ee~~|<br>~~OI~~<br>~~ee~~|V<br>~~(OO ~~<br>~~ee~~|IE= 10A, IC= 0<br> ~~(OO~~<br>~~ee~~|
|Collector Cutoff Current<br>~~ee~~|ICEX<br>~~ee~~|<br>~~ee~~|50<br>~~ee~~|nA<br>~~ee~~|VCE= 30V, VEB(OFF)= 3.0V<br>~~ee~~|
|Base Cutoff Current<br>~~ee~~<br>~~RC~~|IBL<br>~~ee~~|<br>~~ee~~|50<br>~~ee~~|nA<br>~~ee~~|VCE= 30V, VEB(OFF)= 3.0V<br>~~ee~~|
|**ON CHARACTERISTICS**(Note 8)<br>~~RC~~||||||
|DC Current Gain<br>~~RC~~<br>~~—~~|hFE<br>|40<br>70<br>100<br>60<br>30<br>|<br><br>300<br><br><br>|<br>|IC=  100µA, VCE= 1.0V<br>IC=  1.0mA, VCE= 1.0V<br>IC=  10mA, VCE= 1.0V<br>IC=   50mA, VCE= 1.0V<br>IC= 100mA, VCE= 1.0V<br>|
|Collector-Emitter Saturation Voltage<br>~~—rr—essSS~~<br>~~—~~|VCE(sat)<br>~~rr—essSS~~<br>|<br>~~rr—essSS~~<br>|0.20<br>0.30<br>~~rr—essSS~~<br>|V<br>~~rr—essSS~~<br>|IC= 10mA, IB= 1.0mA<br>IC= 50mA, IB= 5.0mA<br>~~rr—essSS~~<br>|
|Base-Emitter Saturation Voltage<br>~~—~~<br>~~— rrr—ss—sSSSdL~~|VBE(sat)<br><br>~~rrr—ss—sSSSdL~~|0.65<br><br><br>~~rrr—ss—sSSSdL~~|0.85<br>0.95<br><br>~~rrr—ss—sSSSdL~~|V<br><br>~~rrr—ss—sSSSdL~~|IC= 10mA, IB= 1.0mA<br>IC= 50mA, IB= 5.0mA<br><br>~~rrr—ss—sSSSdL~~|
|**SMALL SIGNAL CHARACTERISTICS**<br>~~—~~<br>~~re~~||||||
|Output Capacitance<br>~~re~~|Cobo<br>~~re~~|<br>~~re~~|4.0<br>~~re~~|pF<br>~~re~~|VCB= 5.0V, f = 1.0MHz, IE= 0|
|Input Capacitance<br>~~re~~<br>~~Re~~<br>~~—————~~|Cibo<br>~~re~~<br>~~I~~|<br>~~re~~<br>~~I~~|8.5<br>~~re~~<br>~~I~~|pF<br>~~re~~<br>~~ee~~|VEB= 0.5V, f = 1.0MHz, IC= 0<br>~~ee~~|
|Input Impedance<br>~~nD~~<br>~~Re~~<br>~~—————~~|hie<br>~~nD~~<br>~~I~~|1.0<br>~~nD~~<br>~~I~~|10<br>~~nD~~<br>~~I~~|k<br>~~nD~~<br>~~ee~~|VCE= 10V, IC= 1.0mA,<br>f = 1.0kHz<br>~~ee~~|
|Voltage Feedback Ratio<br>~~Re~~<br>~~—————~~|hre<br>~~I ~~|0.5<br> ~~I ~~|8.0<br> ~~I~~|x 10<br>-4<br>~~ee~~||
|Small Signal Current Gain<br>~~—————~~|hfe|100|400|<br>~~ee~~||
|Output Admittance<br>~~—————~~<br>~~a~~|hoe<br>~~ee~~|1.0<br>~~ee~~|40<br>~~ee~~|µS<br>~~ee~~<br>~~ee~~||
|Current Gain-Bandwidth Product<br>~~—————~~<br>~~a~~|fT<br>~~ee~~|300<br>~~ee~~|<br>~~ee~~|MHz<br>~~ee~~<br>~~ee~~|VCE= 20V, IC= 10mA,<br>f = 100MHz<br>~~ee~~|
|**SWITCHING CHARACTERISTICS**<br>~~a~~<br>~~ee ee ee~~<br>~~ee~~<br>~~ee~~||||||
|Delay Time<br>~~ee~~|td<br>~~ee~~|<br>~~ee~~|35<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|VCC= 3.0V, IC= 10mA,<br>VBE(off)= - 0.5V, IB1= 1.0mA<br>~~ee~~|
|Rise Time<br>~~ee~~|tr<br>~~ee~~|<br>~~ee~~|35<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~||
|Storage Time<br>~~ee~~|ts<br>~~ee~~|<br>~~ee~~|200<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|VCC= 3.0V, IC= 10mA,<br>IB1= IB2= 1.0mA<br>~~ee~~|
|Fall Time<br>~~ee~~|tf<br>~~ee~~|<br>~~ee~~|50<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~||



4 of 7 **www.diodes.com** 

MMBT3904FA Document number: DS36016 Rev. 1 - 2 

July 2013 © Diodes Incorporated 

**MMBT3904FA** 

**Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

**==> picture [495 x 651] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.14 I B  = 2mA 400<br>V  = 1V<br>$$ +++ he I B  = 1.6mA 350 oe T  = 150°C CE<br>0.12 pe I  = 1.2mA errr A Ee Ey<br>oe B 300 a SE HH T  = 125°C<br>0.10 a7 A —— I  = 0.8mA | A<br> 22> _aee B se<br>0.08 Lae —— | — IB = 0.6mA 250 T A  = 85°C IN<br>(recelf a I  = 0.4mA 200 SaunRiEiiinsan eae<br>0.06 B T A  = 25 ° C<br>ea| Zee eee 150 ——-—\a a a<br>0.04 | a aes<br>I  = 0.2mA<br>| B 100 ee<br>T  = -55°C<br>A<br>0.02 | = ee = eee,<br>|(ae 50 ee/ G0\Ne<br>0.00 PUT 1 | ye 2 3 4 5 6 0 Ai<br>1 10 100<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA)<br>Fig. 4 Typical Collector Current Fig. 5 Typical DC Current Gain<br>vs. Collector-Emitter Voltage vs. Collector Current<br>IC/IB = 10 IC/IB = 20<br>ifWi, 1 aiee i<br>0.1 WiY aef /,<br>T  = 125 ° C T A  = 150°C<br>A fff ff<br>=en 7Sn AAAli |coon T A  = 150°C 4 {A<br>T  = 125°C<br>SSN 0.1 SS A a<br>T  = 85°C<br>A<br>T  = 85°C<br>iT T A  = -55°C | T A  = 25°C SeePN T A  = -55°C T A  = 25°C A<br>| SE<br>0.01 0.01<br>100m 1 10 100 100m 1 10 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Fig. 6 Typical Collector-Emitter Saturation Voltage Fig. 7 Typical Collector-Emitter Saturation Voltage<br>vs. Collector Current vs. Collector Current<br>V  = 5V Gain = 10<br>CE<br>1.0 HT 1.0 A<br>T  = 150°C<br>T  = 150°C A<br>A<br>NE ET HM | iy et<br>0.8 eT | PLLY 0.8 O sdY<br>T  = 125°C<br>T  = 125°C A<br>A LTD (ees<br>fi<br>0.6 T A  = 85°C 0.6<br>gaa: eo<br>peeraw et a aon | AAI<br>0.4 0.4 T  = -55°C<br>A<br>T  = -55°C<br>A<br>‘amma 1 10 RT 100 e e TTee 1 10 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Fig. 8 Typical Base-Emitter Turn On Voltage Fig. 9 Typical Base-Emitter Saturation Voltage<br>vs. Collector Current<br>TA = 25°C<br>TA = 85°C<br>TA = 25°C<br>, DC CURRENT GAIN<br>FE<br>, COLLECTOR CURRENT (A) h<br>IC<br>, COLLECTOR-EMITTER , COLLECTOR-EMITTER<br>CE(SAT) SATURATION VOLTAGE (V) CE(SAT) SATURATION VOLTAGE (V)<br>V V<br>, BASE-EMITTER TURN ON VOLTAGE (V) , BASE-EMITTER SATURATION VOLTAGE (V)<br>BE(SAT)<br>BE(ON) V<br>V<br>**----- End of picture text -----**<br>


**==> picture [165 x 18] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 8 Typical Base-Emitter Turn On Voltage<br>vs. Collector Current<br>**----- End of picture text -----**<br>


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MMBT3904FA Document number: DS36016 Rev. 1 - 2 

July 2013 © Diodes Incorporated 

**www.diodes.com** 

**MMBT3904FA** 

## **Package Outline Dimensions** 

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**----- Start of picture text -----**<br>
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.<br>A3<br>A A1<br>X2-DFN0806-3<br>Seating Plane Dim Min  Max  Typ<br>A  0.375 0.40 0.39<br>fa A1  0 0.05 0.02<br>A3 -  -  0.10<br>b 0.10 0.20 0.15<br>D<br>D  0.55 0.65 0.60<br>e D1  0.35 0.45 0.40<br>E  0.75 0.85 0.80<br>= === E1  0.20 0.30 0.25<br>e -  -  0.35<br>L (2x) K  -  -  0.20<br>L  0.20 0.30 0.25<br>K b (2x) All Dimensions in mm<br>E<br>E1<br>Pin#1<br>R0.075<br>oe D1<br>Suggested Pad Layout<br>**----- End of picture text -----**<br>


Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

**==> picture [135 x 203] intentionally omitted <==**

**----- Start of picture text -----**<br>
X1<br>Y1<br>Y2<br>X (2x)<br>Y (2x)<br>C<br>od. X2<br>**----- End of picture text -----**<br>


**==> picture [89 x 86] intentionally omitted <==**

**----- Start of picture text -----**<br>
Value<br>Dimensions<br>(in mm)<br>C 0.350<br>X  0.200<br>X1  0.450<br>X2  0.550<br>Y  0.375<br>Y1  0.475<br>Y2  1.000<br>**----- End of picture text -----**<br>


6 of 7 **www.diodes.com** 

MMBT3904FA Document number: DS36016 Rev. 1 - 2 

July 2013 © Diodes Incorporated 

**MMBT3904FA** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2013, Diodes Incorporated 

**www.diodes.com** 

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MMBT3904FA Document number: DS36016 Rev. 1 - 2 

July 2013 © Diodes Incorporated 



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