# Bipolar (BJT) Single Transistor, NPN, 40 V, 100 mA, 225 mW, SOT-23, Surface Mount
**URL**: https://novapart.co/products/MMBT3416LT3G/bipolar-bjt-single-transistor-npn-40-v-100-ma-225
**SKU**: MMBT3416LT3G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.0170
**Stock**: 1000+
**Lead Time**: 2 days (indicative)
## Description
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:-; Power Dissipation Pd:225mW; DC Collector Current:100mA; DC Current Gain hFE:75hFE; Transisto
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 225mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | - |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 75hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 100mA |
| Collector Emitter Voltage Max | 40V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2727982RL/)
## MMBT3416LT3G
## General Purpose Amplifier
## **NPN Silicon**
## **Features**
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
**MAXIMUM RATINGS**
|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Total Device Dissipation FR−5 Board,
(Note 1) TA= 25°C
Derate above 25°C|PD|225
1.8|mW
mW/°C|
|Thermal Resistance, Junction−to−Ambient|R JA|556|°C/W|
|Total Device Dissipation Alumina Substrate,
(Note 2) TA= 25°C
Derate above 25°C
~~eee~~|PD
~~eee~~|300
2.4
~~eee~~|mW
mW/°C
~~eee~~|
|Thermal Resistance, Junction−to−Ambient
~~eee~~|R JA
~~eee~~|417
~~eee~~|°C/W
~~eee~~|
|Junction and Storage Temperature|TJ, Tstg|−55 to +150|°C|
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
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COLLECTOR
3
1
BASE
2
EMITTER
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**----- Start of picture text -----**
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
**----- End of picture text -----**
## **MARKING DIAGRAM**
**==> picture [164 x 119] intentionally omitted <==**
**----- Start of picture text -----**
GP M
am 1
GP = Device Code
M = Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
**----- End of picture text -----**
**ORDERING INFORMATION Device Package Shipping**[†] MMBT3416LT3G SOT−23 10,000/Tape & Reel (Pb−Free) ~~=~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Publication Order Number:
**1**
© Semiconductor Components Industries, LLC, 1998 **June, 2018 − Rev. 4**
**MMBT3416LT3/D**
## **MMBT3416LT3G**
## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted)
|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Collector−Emitter Breakdown Voltage
(IC= 1.0 mAdc, IB= 0)|V(BR)CEO|40|−|Vdc|
|Emitter−Base Breakdown Voltage
(IE= 100�Adc, IC= 0)|V(BR)EBO|4.0|−|Vdc|
|Collector Cutoff Current
(VCB= 25 Vdc, IE= 0)|ICBO1|−|100|nAdc|
|Emitter Cutoff Current
(VEB= 5.0 Vdc, IC= 0)|IEBO|−|100|nAdc|
|**ON CHARACTERISTICS**|||||
|DC Current Gain
(IC= 2.0 mAdc, VCE= 4.5 Vdc)|hFE|75|225|−|
|Collector−Emitter Saturation Voltage
(IC= 50 mAdc, IB= 3.0 mAdc)|VCE(sat)|−|0.3|Vdc|
|Base−Emitter Saturation Voltage
(IC= 50 mAdc, IB= 3.0 mAdc)|VBE(sat)|0.6|1.3|Vdc|
|**SMALL−SIGNAL CHARACTERISTICS**|||||
|Collector Cutoff Current
(VCB= 18 Vdc, TA= 100°C)|ICBO2|−|15|�Adc|
|Small−Signal Current Gain
(IC= 2.0 mAdc, VCE= 4.0 Vdc, f = 1 kHz)|hFE|75|−|−|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
## **EQUIVALENT SWITCHING TIME TEST CIRCUITS**
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+�3.0 V +�3.0 V
300 ns +10.9 V 275 DUTY CYCLE = 2%10 < t1 < 500 �s t1 +10.9 V 275
DUTY CYCLE = 2%
10 k 10 k
0
-�0.5 V
<1.0 ns CS < 4.0 pF* CS < 4.0 pF
-�9.1 V 1N916
<1.0 ns
*Total shunt capacitance of test jig and connectors
**----- End of picture text -----**
**Figure 1. Turn−On Time**
**Figure 2. Turn−Off Time**
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**2**
**MMBT3416LT3G**
## **TYPICAL NOISE CHARACTERISTICS**
(VCE = 5.0 Vdc, TA = 25 ° C)
**==> picture [492 x 616] intentionally omitted <==**
**----- Start of picture text -----**
20 100
IC = 1.0 mA BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz
50
RS = 0 I C = 1.0 mA RS ≈∞
300 �A 20 300 �A
10
10 100 �A
5.0
7.0 100 �A
2.0
5.0
1.0
3.0 10 �A 30 �A 0.5 30 �A
0.2 10 �A
2.0 0.1
10 20 50 100 200 500 1�k 2�k 5�k 10�k 10 20 50 100 200 500 1�k 2�k 5�k 10
f, FREQUENCY (Hz) f, FREQUENCY (Hz)
Figure 3. Noise Voltage Figure 4. Noise Current
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25 ° C)
500�k 1�M
200�k BANDWIDTH = 1.0 Hz 500�k BANDWIDTH = 1.0 Hz
100�k 200�k
50�k 100�k
20�k 50�k
10�k 20�k
5�k 10�k
2.0 dB 1.0 dB
1�k2�k 3.0 dB 4.0 dB 6.0 dB 5�k2�k 2.0 dB 3.0 dB
10 dB
500 1�k
200 500 5.0 dB
100 200 8.0 dB
50 100
10 20 30 50 70 100 200 300 500 700 1�k 10 20 30 50 70 100 200 300 500 700 1
IC, COLLECTOR CURRENT (�A) IC, COLLECTOR CURRENT (�A)
Figure 5. Narrow Band, 100 Hz Figure 6. Narrow Band, 1.0 kHz
500�k
10 Hz to 15.7 kHz
200�k
100�k
50�k
Noise Figure is defined as:
20�k
en [2] � 4KTRS � In [2] RS [2] 1 � 2
10�k NF � 20 log10
5�k 1.0 dB � 4KTRS �
en = Noise Voltage of the Transistor referred to the input. (Figure
2�k 2.0 dB In = Noise Current of the Transistor referred to the input. (Figure
1�k 3.0 dB K = Boltzman’s Constant (1.38 x 10 [−23] j/ ° K)
500 5.0 dB T = Temperature of the Source Resistance ( ° K)
200 RS = Source Resistance (Ohms)
8.0 dB
100
50
10 20 30 50 70 100 200 300 500 700 1�k
IC, COLLECTOR CURRENT (�A)
en, NOISE VOLTAGE (nV) In, NOISE CURRENT (pA)
RS, SOURCE RESISTANCE (OHMS) RS, SOURCE RESISTANCE (OHMS)
RS, SOURCE RESISTANCE (OHMS)
**----- End of picture text -----**
**Figure 7. Wideband**
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**3**
**MMBT3416LT3G**
## **TYPICAL STATIC CHARACTERISTICS**
**==> picture [494 x 597] intentionally omitted <==**
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400
TJ = 125°C
200 25 ° C
-�55°C
100
80
MPS390
60 VCE4 = 1.0 V
V CE = 10 V
40
0.004 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
1.0 100
TMPS3904J = 25°C PULSE WIDTH = 300 TA = 25°C �s IB = 500 �A
0.8 80 DUTY CYCLE ≤ 2.0% 400 �A
IC = 1.0 mA 10 mA 50 mA 100 mA 300 �A
0.6 60
200 �A
0.4 40
100 �A
0.2 20
0 0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 5.0 10 15 20 25 30 35
IB, BASE CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 9. Collector Saturation Region Figure 10. Collector Characteristics
1.4 1.6
T J = 25°C *APPLIES for IC/IB ≤ hFE/2
1.2
0.8
25°C to 125°C
1.0
*�VC for VCE(sat)
0
0.8 VBE(sat) @ IC/IB = 10 -55°C to 25°C
0.6
-�0.8
V BE(on) @ V CE = 1.0 V
0.4 25°C to 125°C
-�1.6
0.2 �VB for VBE -55°C to 25°C
VCE(sat) @ IC/IB = 10
0 -�2.4
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 1
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
FE
h , DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
C)°
V, VOLTAGE (VOLTS)
V, TEMPERATURE COEFFICIENTS (mV/
θ
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**Figure 11. “On” Voltages**
**Figure 12. Temperature Coefficients**
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**4**
**MMBT3416LT3G**
## **TYPICAL DYNAMIC CHARACTERISTICS**
**==> picture [494 x 598] intentionally omitted <==**
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300 1000
200 VCC = 3.0 V 700
TICJ/I = 25B = 10°C 500 ts
100 300
70
200
50
30 tr 100 tf
20 70
50
td @ VBE(off) = 0.5 Vdc
10 30 VCC = 3.0 V
7.0 IC/IB = 10
20
5.0 IB1 = IB2
TJ = 25°C
3.0 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 1
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 13. Turn−On Time Figure 14. Turn−Off Time
500 10
TJ = 25°C T J = 25°C
f = 100 MHz 7.0 f = 1.0 MHz
300
VCE = 20 V 5.0 Cib
200 5.0 V
Cob
3.0
100 2.0
70
50 1.0
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)
Figure 15. Current−Gain — Bandwidth Product Figure 16. Capacitance
20 200
VCE = 10 Vdc VCE = 10 Vdc
7.010 MPS3904hfe ≈ 200 @ IC = 1.0 mA f = 1.0 kHzTA = 25°C 10070 f = 1.0 kHzTA = 25°C
5.0 50
MPS3904
3.0 30 hfe ≈ 200 @ IC = 1.0 mA
2.0 20
1.0 10
0.7 7.0
0.5 5.0
0.3 3.0
0.2 2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 1
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
t, TIME (ns) t, TIME (ns)
C, CAPACITANCE (pF)
f�, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)T
)Ω
hie, INPUT IMPEDANCE (k �
oe
h , OUTPUT ADMITTANCE ( mhos)
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**Figure 17. Input Impedance**
**Figure 18. Output Admittance**
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**5**
**MMBT3416LT3G**
**==> picture [493 x 599] intentionally omitted <==**
**----- Start of picture text -----**
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
FIGURE 19A
0.07 0.05 DUTY CYCLE, D = t 1 /t 2
D CURVES APPLY FOR POWER
0.05 0.02 P(pk) PULSE TRAIN SHOWN READ TIME AT tZ � JA(t) = r(t) � R � JA1 (SEE AN−569)
0.03 t 1 TJ(pk) − TA = P(pk) Z � JA(t)
0.01
0.02 SINGLE PULSE t2
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0�k 2.0�k 5.0�k 10�k 20�k 50�k 100
t, TIME (ms)
Figure 19. Thermal Response
10 [4]
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
V CC = 30 Vdc
10 [3] A train of periodical power pulses can be represented by the
model as shown in Figure 19A. Using the model and the device
10 [2] ICEO thermal response the normalized effective transient thermal
resistance of Figure 19 was calculated for various duty cycles.
To find Z � JA(t), multiply the value obtained from Figure 19 by the
10 [1] steady state value R � JA.
Example:
10 [0] I CBO The MPS3904 is dissipating 2.0 W peak under the following
AND
conditions:
10 [-1] ICEX @ VBE(off) = 3.0 Vdc t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
10 [-2]
-4 -2 0 +20 +40 +60 +80 +100 +120 +140 +160 The peak rise in junction temperature is therefore
0 0 TJ, JUNCTION TEMPERATURE (°C) � T = r(t) x P(pk) x R � JA = 0.22 x 2.0 x 200 = 88 ° C.
For more information, see AN−569.
Figure 19A.
400 The safe operating area curves indicate IC−VCE limits of the
1.0 ms 100 �s transistor that must be observed for reliable operation. Collector
200 load lines for specific circuits must fall below the limits indicated
10 �s by the applicable curve.
100 TC = 25°C 1.0 s The data of Figure 20 is based upon TJ(pk) = 150 ° C; TC or TA
dc is variable depending upon conditions. Pulse curves are valid for
60 T A = 25°C duty cycles to 10% provided TJ(pk) ≤ 150 ° C. TJ(pk) may be
40 dc calculated from the data in Figure 19. At high case or ambient
temperatures, thermal limitations will reduce the power that can
20 T J = 150°C be handled to values less than the limitations imposed by second
breakdown.
10 CURRENT LIMIT
THERMAL LIMIT
6.0
SECOND BREAKDOWN LIMIT
4.0
2.0 4.0 6.0 8.0 10 20 40
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
(NORMALIZED)
r(t) TRANSIENT THERMAL RESISTANCE
IC, COLLECTOR CURRENT (nA)
IC, COLLECTOR CURRENT (mA)
**----- End of picture text -----**
**Figure 20.**
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**6**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
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**----- Start of picture text -----**
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
2 DATE 30 JAN 2018
SCALE 4:1
D NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
“a 3 t = THE BASE MATERIAL.
| E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.
1 2
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
L A 0.89 1.00 1.11 0.035 0.039 0.044
3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020
e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008
TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120
E 1.20 1.30 1.40 0.047 0.051 0.055
e 1.78 1.90 2.04 0.070 0.075 0.080
L 0.30 0.43 0.55 0.012 0.017 0.022
A L1 0.35 0.54 0.69 0.014 0.021 0.027
H E 2.10 2.40 2.64 0.083 0.094 0.104
= T 0 ° −−− 10 ° 0 ° −−− 10 °
a A1 SIDE VIEW SEE VIEW C c
GENERIC
END VIEW
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT XXXM
1
2.90 i 0.903X XXX = Specific Device Code oo
M = Date Code
= Pb−Free Package
LO | cr ,
*This information is generic. Please refer to
3X 0.80 a) LL 0.95 device data sheet for actual part marking.
PITCH Pb−Free indicator, “G” or microdot “ ”, |
DIMENSIONS: MILLIMETERS may or may not be present.
STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:
CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE
2. EMITTER 2. BASE 2. NO CONNECTION
3. COLLECTOR 3. COLLECTOR 3. CATHODE
STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:
PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE
2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE
3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE
STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:
PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE
2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE
3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE
STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:
PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE
2. SOURCE 2. OUTPUT 2. ANODE 2. DRAIN 2. CATHODE 2. ANODE
3. DRAIN 3. INPUT 3. CATHODE 3. SOURCE 3. GATE 3. NO CONNECTION
STYLE 27: STYLE 28:
PIN 1. CATHODE PIN 1. ANODE
2. CATHODE 2. ANODE
3. CATHODE 3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42226B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: SOT−23 (TO−236) PAGE 1 OF 1
aes
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