# Bipolar (BJT) Single Transistor, General Purpose, PNP, 60 V, 600 mA, 150 mW, SOT-323, Surface Mount

![Product image](https://novapart.co/image/farnell:2317861/)

**URL**: https://novapart.co/products/MMBT2907AWT1G/bipolar-bjt-single-transistor-general-purpose-pnp
**SKU**: MMBT2907AWT1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.0240
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:200MHz; Power Dissipation Pd:150mW; DC Collector Current:-600mA; DC Current Gain hFE:50h

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 150mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 200MHz |
| Transistor Case Style | SOT-323 |
| Dc Current Gain Hfe Min | 50hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 600mA |
| Collector Emitter Voltage Max | 60V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2317861/)

## MMBT2907AWT1G, NSVMMBT2907AWT1G 

## General Purpose Transistor 

## **PNP Silicon** 

These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 package which is designed for low power surface mount applications. 

## **Features** 

- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **http://onsemi.com** 

**==> picture [69 x 88] intentionally omitted <==**

**----- Start of picture text -----**<br>
COLLECTOR<br>3<br>1<br>BASE<br>© )<br>2<br>EMITTER<br>**----- End of picture text -----**<br>


**==> picture [87 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
MAXIMUM RATINGS<br>**----- End of picture text -----**<br>


**Rating Symbol Value Unit** Collector−Emitter Voltage VCEO −60 Vdc Collector−Base Voltage VCBO −60 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −600 mAdc ~~=p~~ **THERMAL CHARACTERISTICS Characteristic Symbol Max Unit** Total Device Dissipation FR−5 Board PD 150 mW (Note 1) TA = 25 ° C Thermal Resistance Junction−to−Ambient R JA 833 ° C/W Junction and Storage Temperature TJ, Tstg −55 to ° C +150 Stresses exceeding those listed in the Maximum Ratings table may damage the ~~eeee ee~~ device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 

3 **SC−70/SOT−323 CASE 419−04** 1 **STYLE 3** 2 **MARKING DIAGRAM** ~~>~~ 20 M 1 : 20 = Specific Device Code M = Date Code = Pb−Free Package (Note: Microdot may be in either location) 

*Date Code orientation may vary depending upon manufacturing location. 

**ORDERING INFORMATION Device Package Shipping**[†] MMBT2907AWT1G SC−70 3000 Tape & (Pb−Free) Reel NSVMMBT2907AWT1G SC−70 3000 Tape & (Pb−Free) Reel ~~=~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **MMBT2907AWT1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **July, 2014 − Rev. 7** 

**MMBT2907AWT1G, NSVMMBT2907AWT1G** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Breakdown Voltage (Note 2)<br>(IC= −10 mAdc, IB= 0)||V(BR)CEO|−60|−|Vdc|
|Collector−Base Breakdown Voltage<br>(IC= −10 mAdc, IE= 0)||V(BR)CBO|−60|−|Vdc|
|Emitter−Base Breakdown Voltage<br>(IE= −10�Adc, IC= 0)||V(BR)EBO|−5.0|−|Vdc|
|Base Cutoff Current<br>(VCE= −30 Vdc, VEB(off)= −0.5 Vdc)||IBL|−|−50|nAdc|
|Collector Cutoff Current<br>(VCE= −30 Vdc, VEB(off)= −0.5 Vdc)||ICEX|−|−50|nAdc|
|**ON CHARACTERISTICS(3)**||||||
|DC Current Gain (Note 2)<br>(IC= −0.1 mAdc, VCE= −10 Vdc)<br>(IC= −1.0 mAdc, VCE= −10 Vdc)<br>(IC= −10 mAdc, VCE= −10 Vdc)<br>(IC= −150 mAdc, VCE= −10 Vdc)<br>(IC= −500 mAdc, VCE= −10 Vdc)||HFE|75<br>100<br>100<br>100<br>50|−<br>−<br>−<br>340<br>−|−|
|Collector−Emitter Saturation Voltage (Note 2)<br>(IC= −150 mAdc, IB= −15 mAdc)<br>(IC= −500 mAdc, IB= −50 mAdc)||VCE(sat)|−<br>−|−0.4<br>−1.6|Vdc|
|Base−Emitter Saturation Voltage (Note 2)<br>(IC= −150 mAdc, IB= −15 mAdc)<br>(IC= −500 mAdc, IB= −50 mAdc)||VBE(sat)|−<br>−|−1.3<br>−2.6|Vdc|
|**SMALL−SIGNAL CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= −50 mAdc, VCE= 20 Vdc, f = 100 MHz)||fT|200|−|MHz|
|Output Capacitance<br>(VCB= −10 Vdc, IE= 0, f = 1.0 MHz)||Cobo|−|8.0|pF|
|Input Capacitance<br>(VEB= −2.0 Vdc, IC= 0, f = 1.0 MHz)||Cibo|−|30|pF|
|**SWITCHING CHARACTERISTICS**||||||
|Turn−On Time|(VCC= −30 Vdc,<br>IC= −150 mAdc, IB1= −15 mAdc)|ton|−|45|ns|
|Delay Time||td|−|10||
|Rise Time||tr|−|40||
|Storage Time|(VCC= −6.0 Vdc, IC= −150 mAdc,<br>IB1= IB2= 15 mAdc)|ts|−|80||
|Fall Time||tf|−|30||
|Turn−Off Time||toff|−|100||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

2. Pulse Test: Pulse Width � 300 � s, Duty Cycle � 2.0%. 

**http://onsemi.com** 

**2** 

**MMBT2907AWT1G, NSVMMBT2907AWT1G** 

## **PACKAGE DIMENSIONS** 

**==> picture [462 x 378] intentionally omitted <==**

**----- Start of picture text -----**<br>
SC−70 (SOT−323)<br>CASE 419−04<br>ISSUE N<br>D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>e1 2. CONTROLLING DIMENSION: INCH.<br>MILLIMETERS INCHES<br>3 DIM MIN NOM MAX MIN NOM MAX<br>A 0.80 0.90 1.00 0.032 0.035 0.040<br>HE E A1 0.00 0.05 0.10 0.000 0.002 0.004<br>1 2 A2 0.70 REF 0.028 REF<br>. b 0.30 0.35 0.40 0.012 0.014 0.016<br>c 0.10 0.18 0.25 0.004 0.007 0.010<br>i a n = D 1.80 2.10 2.20 0.071 0.083 0.087<br>b E 1.15 1.24 1.35 0.045 0.049 0.053<br>e 1.20 1.30 1.40 0.047 0.051 0.055<br>e l e ls ———— e1 0.65 BSC 0.026 BSC<br>L 0.20 0.38 0.56 0.008 0.015 0.022<br>H E 2.00 2.10 2.40 0.079 0.083 0.095<br>b o y ee<br>STYLE 3:<br>c<br>A A2 PIN 1. BASE<br>2. EMITTER<br>3. COLLECTOR<br>0.05 (0.002) L<br>A1<br>SOLDERING FOOTPRINT*<br>0.65<br>0.65 0.025<br>0.025<br>1.9<br>aa<br>0.075<br>0.9<br>0.035<br>0.7<br>Ce<br>0.028<br>SCALE 10:1 mm<br>a = inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

**ON Semiconductor** and          are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).  SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf.  SCILLC reserves the right to make changes without further notice to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.  All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.  SCILLC does not convey any license under its patent rights nor the rights of others.  SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.  Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  SCILLC is an Equal Opportunity/Affirmative Action Employer.  This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative 

## **LITERATURE FULFILLMENT** : 

**http://onsemi.com** 

**MMBT2907AWT1/D** 

**3** 



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