# Bipolar (BJT) Single Transistor, PNP, 60 V, 600 mA, 310 mW, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:1773627RL/)

**URL**: https://novapart.co/products/MMBT2907A-7-F/bipolar-bjt-single-transistor-pnp-60-v-600-ma-310
**SKU**: MMBT2907A-7-F
**Manufacturer**: DIODES INC.
**Price**: €0.0240
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:200MHz; Power Dissipation Pd:300mW; DC Collector Current:-600mA; DC Current Gain hFE:100hFE; Transistor Ca

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 310mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 200MHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 100hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 600mA |
| Collector Emitter Voltage Max | 60V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1773627RL/)

**MMBT2907A** 

**60V PNP SMALL-SIGNAL TRANSISTOR IN SOT23** 

## **Features** 

## **Mechanical Data** 

- Epitaxial Planar Die Construction 

- Ideal for Low-Power Amplification and Switching 

- Complementary NPN Type: MMBT2222A 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **An automotive-compliant part is available under separate datasheet (MMBT2907AQ)** 

- Package: SOT23 

- Package Material: Molded Plastic, “Green” Compound; UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 

- Weight: 0.008 grams (Approximate) 

**==> picture [353 x 111] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT23  C<br>B<br>O<br>E<br>Top View<br>Device Symbol  Pinout<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Top View<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Orderable Part Number**|**Package**|**Marking**|**Reel Size (inches)**|**Tape Width (mm)**|**Packing**|**Packing**|
|---|---|---|---|---|---|---|
||||||**Qty. **|**Carrier**|
|MMBT2907A-7-F|SOT23|K2F|7|8|3,000|Reel|
|MMBT2907A-13-F|SOT23|K2F|13|8|10,000|Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

SOT23 K2F = Product Type Marking Code YM = Date Code Marking Y or Y or Y = Year (ex: M = 2025) M or M = Month (ex: 9 = September) 

Date Code Key 

**==> picture [521 x 55] intentionally omitted <==**

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MMBT2907A Document number: DS30040 Rev. 21 - 2 

April 2025 

© 2025 Copyright Diodes Incorporated. All Rights Reserved. 

**MMBT2907A** 

**Absolute Maximum Ratings** (@ TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|-60|V|
|Collector-Emitter Voltage|VCEO|-60|V|
|Emitter-Base Voltage|VEBO|-6.0|V|
|Collector Current|IC|-600|mA|
|Peak Collector Current|ICM|-800|mA|
|Peak Base Current|IBM|-200|mA|



## **Thermal Characteristics** 

|**Thermal Characteristics**|||||||
|---|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**||**Unit**|
|Collector Power Dissipation|(Note 5)<br>(Note 6)||PD|310<br>350||mW|
|Thermal Resistance, Junction to Ambient|(Note 5)<br>(Note 6)||RθJA|403<br>357||°C/W|
|Thermal Resistance,Junction to Leads|(Note 7)||RθJL|350||°C/W|
|Thermal Resistance,Junction to Case|(Note 5)||RθJC|120||°C/W|
|Operatingand Storage Temperature Range|||TJ,TSTG|-55 to +150||°C|
||||||||
|**ESD Ratings **(Note 8)|||||||
|**Characteristic**<br>**Symbol**<br>**Value**<br>**Unit**<br>**JEDEC Class**<br>Electrostatic Discharge - Human BodyModel<br>ESD HBM<br>4,000<br>V<br>3A<br>Electrostatic Discharge - Machine Model<br>ESD MM<br>400<br>V<br>C<br>~~——==——~~|||||||
|Notes:<br>5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR-4 PCB; device is measured under still air conditions|||||||
|whilst operating in a steady state.|||||||



6. Same as Note 5, except the device is mounted on 15mm x 15mm 1oz copper. 

7. Thermal resistance from junction to solder-point (at the end of the leads). 

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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MMBT2907A Document number: DS30040 Rev. 21 - 2 

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**MMBT2907A** 

## **Thermal Characteristics and Derating Information** 

**==> picture [216 x 342] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.4<br>Ft} |] tt tty tt ed<br>0.3 PN<br>PN<br>0.2 PTT TIE NEEL Ey<br>PIN<br>NX<br>0.1<br>PLN<br>0.0 SRRRReANGNO\N<br>0 25 50 75 100 125 150<br> Temperature (oC)<br>Figure 1. Derating Curve  Derating Curve<br>10<br>ee|<br>ROTISHETn Single Pulse. TA=25oC Thy<br>PACU TP Hh<br>TT TT Tt<br>LAN EAI TT ETI TTT<br>1 Bi SU EN<br>EHH EH<br>CCI CI<br>CECE<br>a CT<br>0.1 CHT<br>10m 100m 1 10 100 1k<br>Pulse Width (s)<br> Max Power Dissipation (W)<br> Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


**==> picture [218 x 154] intentionally omitted <==**

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400<br>350 | | |<br>300 ITT elen ||<br>250 MN _ fg |<br>FETT<br>D=0.5<br>200 FCCLA CHILITl<br>150 eePHT D=0.1 IGT|FE<br>100 D=0.2 Single Pulse<br>50 TeLt |a SII| || ITII 1LL<br>D=0.05<br>0 ereetTvi | WEa |<br>100μ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s)<br>Thermal Resistance (<br>C/W)<br>o<br>**----- End of picture text -----**<br>


**Transient Thermal Impedance** Figure 2. Transient Thermal Impedance 

Figure 3. Pulse Power Dissipation **Pulse Power Dissipation** 

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MMBT2907A Document number: DS30040 Rev. 21 - 2 

April 2025 

© 2025 Copyright Diodes Incorporated. All Rights Reserved. 

**MMBT2907A** 

**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.) 

|~~rr~~|||||~~ae~~|
|---|---|---|---|---|---|
|**Characteristic**<br>~~eG~~<br>~~rr~~|**Symbol**<br>~~eG~~|**Min**<br>~~eG~~|**Max**<br>~~eG~~<br>~~CO~~|**Unit**<br>~~eG~~<br>~~CO~~|**Test Condition**<br>~~eG~~<br>~~CO~~<br>~~ae~~|
|**OFF CHARACTERISTICS**<br>~~CO CO~~<br>~~a~~<br>~~ae~~<br>~~rr~~||||||
|Collector-Base Breakdown Voltage<br>~~a~~<br>~~rr~~|BVCBO<br>~~a~~|-60<br>~~a~~|⎯<br>~~a~~|V<br>~~a~~|IC= -100μA,IE= 0<br>~~a~~<br>~~ae~~|
|Collector-Emitter Breakdown Voltage(Note 9)<br>~~rr~~|BVCEO|-60<br>~~se~~|⎯<br>~~se~~|V<br>~~se~~|IC= -10mA,IB= 0<br>~~ae~~<br>~~se~~|
|Emitter-Base Breakdown Voltage<br>~~rr~~|BVEBO|-6.0<br>~~se~~<br>~~ee~~|⎯<br>~~se~~<br>~~ee~~|V<br>~~se~~|IE= -100μA,IC= 0<br>~~ae~~<br>~~se~~|
|Collector Cutoff Current<br>~~rr~~<br>~~ee~~|ICBO<br>~~ee~~|⎯<br>⎯<br>~~ee~~<br>~~ee~~|-10<br>-10<br>~~ee~~<br>~~ee~~<br>~~GO~~|nA<br>μA<br>~~ee~~<br>~~GO~~|VCB= -50V, IE= 0<br>VCB= -50V,IE= 0,TA= +125°C<br>~~ae~~<br>~~ee~~<br>~~OO~~|
|Collector Cutoff Current<br>~~eG~~|ICEX<br>~~eG~~|⎯<br>~~ee~~<br>~~eG~~|-50<br>~~ee~~<br>~~eG~~<br>~~GO~~|nA<br>~~eG~~<br>~~GO~~|VCE= -30V,VEB(off)= -0.5V<br>~~eG~~<br>~~OO~~|
|Base Cutoff Current<br>~~ee~~|IBL<br>~~ee~~|⎯<br>~~ee~~|-50<br>~~GO~~<br>~~ee~~|nA<br>~~GO ~~<br>~~ee~~|VCE= -30V,VEB(off)= -0.5V<br> ~~OO~~<br>~~ee~~|
|Emitter Cutoff Current<br>~~ee~~|IEBO<br>~~ee~~|⎯<br>~~ee~~|-50<br>~~ee~~|nA<br>~~ee~~|VEB= -6.0V<br>~~ee~~|
|**ON CHARACTERISTICS(Note 9)**<br>~~Re~~||||||
|DC Current Gain|hFE|75<br>100<br>100<br>100<br>50|⎯<br>⎯<br>⎯<br>300<br>⎯|⎯|IC= -100µA, VCE= -10V<br>IC= -1.0mA, VCE= -10V<br>IC= -10mA, VCE= -10V<br>IC= -150mA, VCE= -10V<br>IC= -500mA,VCE= -10V|
|Collector-Emitter Saturation Voltage<br>~~es~~|VCE(sat)<br>~~es~~<br>~~ee~~|⎯<br>⎯<br>~~es~~<br>~~ee~~|-0.4<br>-1.6<br>~~es~~|V<br>~~es~~|IC= -150mA, IB= -15mA<br>IC= -500mA,IB= -50mA<br>~~es~~|
|Base-Emitter Saturation Voltage<br>~~ee~~|VBE(sat)<br>~~ee~~<br>~~ee~~|⎯<br>⎯<br>~~ee~~<br>~~ee~~|-1.3<br>-2.6<br>~~ee~~|V<br>~~ee~~|IC= -150mA, IB= -15mA<br>IC = -500mA,IB = -50mA<br>~~ee~~|
|**SMALL-SIGNAL CHARACTERISTICS**<br>~~ee ee~~<br>~~OO~~||||||
|Output Capacitance<br>~~OO~~|Cobo<br>~~OO~~|⎯<br>~~OO~~|8.0<br>~~OO~~|pF<br>~~OO~~|VCB= -10V,f = 1.0MHz,IE= 0<br>~~OO~~|
|Input Capacitance<br>~~OO~~|Cibo<br>~~OO~~|⎯<br>~~OO~~|30<br>~~OO~~|pF<br>~~OO~~|VEB= -2.0V,f = 1.0MHz,IC= 0<br>~~OO~~|
|Current Gain-Bandwidth Product<br>~~ee~~|fT<br>~~ee~~|200<br>~~ee~~|⎯<br>~~ee~~|MHz<br>~~ee~~|VCE= -20V, IC= -50mA<br>f = 100MHz<br>~~ee~~|
|**SWITCHING CHARACTERISTICS**<br>~~ee~~||||||
|Turn-On Time<br>~~CO~~|ton<br>~~CO~~|⎯<br>~~CO~~|45<br>~~CO~~|ns<br>~~CO~~|VCC= -30V, IC= -150mA<br>IB1= -15mA|
|DelayTime|td|⎯|10|ns||
|Rise Time|tr|⎯|40|ns||
|Turn-Off Time|toff|⎯|100|ns|VCC= -6.0V, IC= -150mA<br>IB1= IB2= -15mA|
|Storage Time|ts|⎯|80|ns||
|Fall Time|tf|⎯|30|ns||



Note: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. 

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MMBT2907A Document number: DS30040 Rev. 21 - 2 

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**MMBT2907A** 

**==> picture [485 x 673] intentionally omitted <==**

**----- Start of picture text -----**<br>
1,000 )V -1.0<br>V     = -5VCE (EG V     = -5VCE<br>A -0.9<br>T<br>T   = 150°CA LO<br>N V -0.8 T   = -50°CA<br>IA N<br>G O<br>T 100 IT -0.7<br>N A<br>E R<br>RRU T   = 25°CA T   = -50°CA UTA -0.6<br>C SR T   = 25°CA<br>C E<br>D T -0.5<br>, EF 10 TIM<br>h E-E -0.4 T   = 150°CA<br>S<br>A<br>B -0.3<br>, )N<br>1-1 CEE -10 CIE -100 CE -1,000 O(EB -0.2-0.1 Till -1 LTE -10 ELI -100<br>V<br>I  , COLLECTOR CURRENT (mA)C I  , COLLECTOR CURRENT (mA)C<br>Figure 4. Typical DC Current Gain vs. Collector Current Figure 5. Typical Base-Emitter Saturation Voltage<br>vs. Collector Current<br>-0.6 1,000<br>IICB  = 10 VCE = -5V<br>R -0.5<br>E<br>T )V<br>TIM (E<br>E G -0.4<br>-RO ATL | 100 TE<br>T O<br>C V -0.3<br>E N<br>L O T   = 150°CA<br>LO IT<br>C A<br>R<br>, )TA UT -0.2 T   = 25°CA iJ 10 th<br>S A<br>(E S<br>C<br>V<br>-0.1 T   = -50°CA<br>0 eT lil 1 tat<br>-1 -10 -100 -1,000 -1 -10 -100<br>I  , COLLECTOR CURRENT (mA)C IC, COLLECTOR CURRENT (mA)<br>Figure 6. Typical Collector-Emitter Saturation Voltage  Figure 7.Fig. 4 Typical Gain-Bandwidth Product vs. Collector CurrentFig. 4 Typical Gain-Bandwidth Product vs. Collector Current<br>vs. Collector Current<br>-1.6 35<br>f = 1MHz<br>-1.4 BT LU IC = -10mA IC = -300mA ALLL 30 TI<br>IC = -100mA<br>-1.2 IC = -1mA IC = -30mA 25<br>HN wt NET<br>-1.0<br>20<br>a Pre Vn S\CUUATOHAATATOGUONLE<br>-0.8 Cibo<br>15<br>-0.6 B00 |e TONS TTT<br>a 0 10 ITTVOORITTOOEE<br>-0.4<br>Cobo<br>-0.2 5<br>CUI A Se SCC th<br>0 BT UseHIN CINa TNS 0 EPPSTTTT<br>-0.001 -0.01 -0.1 -1 -10 -100 0 2 4 6 8 10 12 14 16 18 20<br>IB, BASE CURRENT (mA) VR, REVERSE VOLTAGE (V)R, REVERSE VOLTAGE (V), REVERSE VOLTAGE (V)<br>Figure 8. Fig. 5 Typical Collector Saturation Region Figure 9.Fig. 6 Typical Capacitance CharacteristicsFig. 6 Typical Capacitance CharacteristicsCapacitance Characteristics<br>, DC CURRENT GAIN<br>FE<br>h<br>, BASE-EMITTER SATURATION VOLTAGE (V)<br>BE(sat)<br>V<br>, COLLECTOR-EMITTER<br>CE(sat) SATURATION VOLTAGE (V)<br>V<br>, COLLECTOR-EMITTER VOLTAGE (V)<br>CE<br>V<br>CAPACITANCE (pF)<br>, GAIN-BANDWIDTH PRODUCT (MHz)<br>fT<br>**----- End of picture text -----**<br>


Figure 7.Fig. 4 Typical Gain-Bandwidth Product vs. Collector CurrentFig. 4 Typical Gain-Bandwidth Product vs. Collector Current 

**==> picture [206 x 224] intentionally omitted <==**

**----- Start of picture text -----**<br>
35<br>f = 1MHz<br>30 TI<br>25<br>NET<br>20<br>S\CUUATOHAATATOGUONLE<br>Cibo<br>15<br>TONS TTT<br>10 ITTVOORITTOOEE<br>Cobo<br>5<br>SCC th<br>0 EPPSTTTT<br>0 2 4 6 8 10 12 14 16 18 20<br>VR, REVERSE VOLTAGE (V)R, REVERSE VOLTAGE (V), REVERSE VOLTAGE (V)<br>Figure 9.Fig. 6 Typical Capacitance CharacteristicsFig. 6 Typical Capacitance CharacteristicsCapacitance Characteristics<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


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MMBT2907A Document number: DS30040 Rev. 21 - 2 

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© 2025 Copyright Diodes Incorporated. All Rights Reserved. 

**MMBT2907A** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT23** 

**==> picture [446 x 191] intentionally omitted <==**

**----- Start of picture text -----**<br>
All 7°<br>H<br>GAUGE  PLANE SOT23<br>0.25 Dim  Min  Max  Typ<br>K1 K J A  0.37  0.51  0.40<br>B  1.20 1.40 1.30<br>6~EEEE C 2.30 2.50 2.40<br>a D  0.89 1.03 0.915<br>A M<br>F  0.45 0.60 0.535<br>=eve L s [|] L1 === G 1.78 2.05 1.83<br>H  2.80 3.00 2.90<br>J 0.013 0.10 0.05<br>K  0.890 1.00 0.975<br>C B K1  0.903 1.10 1.025<br>L  0.45 0.61  0.55<br>L1  0.25 0.55 0.40<br>M  0.085 0.150 0.110<br>ry=H ———===es ee<br>D a 0°  8°  --<br>All Dimensions in mm<br>F G<br>7 ~- ee<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

**==> picture [282 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SOT23<br>Y<br>Y1 a C<br>a<br>Po X Ld X1<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value (in mm)**|
|---|---|
|**C**|**()**<br>2.0|
|**X**|0.8|
|**X1**|1.35|
|**Y**<br>**Y1**|0.9<br>2.9|
|**Y1**|2.9|



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**MMBT2907A** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functionalsafety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes’ products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes’ products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes’ products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

9. This Notice may be periodically updated with the most recent version available at https://www.diodes.com/about/company/terms-andconditions/important-notice 

The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries. All other trademarks are the property of their respective owners. 

- © 2025 Diodes Incorporated. All Rights Reserved. 

## **www.diodes.com** 

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