# Bipolar (BJT) Single Transistor, General Purpose, NPN, 15 V, 200 mA, 300 mW, SOT-23, Surface Mount ![Product image](https://novapart.co/image/farnell:2441370/) **URL**: https://novapart.co/products/MMBT2369LT1G/bipolar-bjt-single-transistor-general-purpose-npn **SKU**: MMBT2369LT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.0290 **Stock**: 10+ ## Description TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency ft:-; Power Dissipation Pd:300mW; Available until stocks are exhausted Alternative available ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (19-Jan-2021) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | AEC-Q101 | | Power Dissipation | 300mW | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN | | Transition Frequency | - | | Transistor Case Style | SOT-23 | | Dc Current Gain Hfe Min | 120hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 200mA | | Collector Emitter Voltage Max | 15V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2441370/) ## MMBT2369L, MMBT2369AL ## Switching Transistors **NPN Silicon** ## **Features** - S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable **www.onsemi.com** - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* **SOT−23 CASE 318 STYLE 6** ## **MAXIMUM RATINGS** |**Rating**|**Symbol**|**Value**|**Unit**|||**STYLE 6**|**STYLE 6**|**STYLE 6**|**STYLE 6**|**STYLE 6**|**STYLE 6**|| |---|---|---|---|---|---|---|---|---|---|---|---|---| |Collector−Emitter Voltage|VCEO|15|Vdc||COLLECTOR|||||||| |Collector−Emitter Voltage|VCES|40|Vdc|||||3||||| |Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
**THERMAL CHARACTERISTICS**|VCBO
VEBO
IC|40
4.5
200|Vdc
Vdc
mAdc||1
BASE
2
~~<~~|||||||| |||||||EMITTER||||||| |**Characteristic**|**Symbol**|**Max**|**Unit**|||||||||| |Total Device Dissipation FR−5 Board|PD||||**MARKING DIAGRAM**|||||||| |(Note 1) TA= 25°C||225|mW|||||||||| |Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature|R JA
PD
R JA
TJ, Tstg|1.8
556
300
2.4
417
−55 to +150|mW/°C
°C/W
mW
mW/°C
°C/W
°C||xxx = M1J or 1JA
M
= Date Code*
= Pb−Free Package
1
xxx M
~~.~~|||||||| |Stresses exceeding those listed in the Maximum Ratings table may damage the||Stresses exceeding those listed in the Maximum Ratings table may damage the|Stresses exceeding those listed in the Maximum Ratings table may damage the||(Note: Microdot may be in either location)|(Note: Microdot may be in either location)|||||(Note: Microdot may be in either location)|| ## **THERMAL CHARACTERISTICS** Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 0.75 0.062 in. *Date Code orientation and/or overbar may vary depending upon manufacturing location. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. **ORDERING INFORMATION** - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **Device Package Shipping**[†] MMBT2369LT1G SOT−23 3,000 / (Pb−Free) Tape & Reel SMMBT2369LT1G SOT−23 3,000 / (Pb−Free) Tape & Reel MMBT2369ALT1G SOT−23 3,000 / (Pb−Free) Tape & Reel SMMBT2369ALT1G SOT−23 3,000 / (Pb−Free) Tape & Reel ~~=EE~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2016 **October, 2016 − Rev. 10** **MMBT2369LT1/D** ## **MMBT2369L, MMBT2369AL** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Collector−Emitter Breakdown Voltage (Note 3)
(IC= 10 mAdc, IB= 0)|V(BR)CEO|15|−|−|Vdc| |Collector−Emitter Breakdown Voltage
(IC= 10�Adc, VBE= 0)|V(BR)CES|40|−|−|Vdc| |Collector−Base Breakdown Voltage
(IC= 10�Adc, IE= 0)|V(BR)CBO|40|−|−|Vdc| |Emitter−Base Breakdown Voltage
(IE= 10�Adc, IC= 0)|V(BR)EBO|4.5|−|−|Vdc| |Collector Cutoff Current
(VCB= 20 Vdc, IE= 0)
(VCB= 20 Vdc, IE= 0, TA= 150°C)|ICBO|−
−|−
−|0.4
30|�Adc| |Collector Cutoff Current
MMBT2369A (VCE= 20 Vdc, VBE= 0)|ICES|−|−|0.4|�Adc| |**ON CHARACTERISTICS**|||||| |DC Current Gain (Note 3)
MMBT2369 (IC= 10 mAdc, VCE= 1.0 Vdc)
MMBT2369A (IC= 10 mAdc, VCE= 1.0 Vdc)
MMBT2369A (IC= 10 mAdc, VCE= 0.35 Vdc)
MMBT2369A (IC= 10 mAdc, VCE= 0.35 Vdc, TA= −55°C)
MMBT2369A (IC= 30 mAdc, VCE= 0.4 Vdc)
MMBT2369 (IC= 100 mAdc, VCE= 2.0 Vdc)
MMBT2369A (IC= 100 mAdc, VCE= 1.0 Vdc)|hFE|40
−
40
20
30
20
20|−
−
−
−
−
−
−|120
120
−
−
−
−
−|−| |Collector−Emitter Saturation Voltage (Note 3)
MMBT2369 (IC= 10 mAdc, IB= 1.0 mAdc)
MMBT2369A (IC= 10 mAdc, IB= 1.0 mAdc)
MMBT2369A (IC= 10 mAdc, IB= 1.0 mAdc, TA= +125°C)
MMBT2369A (IC= 30 mAdc, IB= 3.0 mAdc)
MMBT2369A (IC= 100 mAdc, IB= 10 mAdc)|VCE(sat)|−
−
−
−
−|−
−
−
−
−|0.25
0.20
0.30
0.25
0.50|Vdc| |Base−Emitter Saturation Voltage (Note 3)
MMBT2369/A (IC= 10 mAdc, IB= 1.0 mAdc)
MMBT2369A (IC= 10 mAdc, IB= 1.0 mAdc, TA= −55°C)
MMBT2369A (IC= 30 mAdc, IB= 3.0 mAdc)
MMBT2369A (IC= 100 mAdc, IB= 10 mAdc)|VBE(sat)|0.7
−
−
−|−
−
−
−|0.85
1.02
1.15
1.60|Vdc| |**SMALL−SIGNAL CHARACTERISTICS**|||||| |Output Capacitance
(VCB= 5.0 Vdc, IE= 0, f = 1.0 MHz)|Cobo|−|−|4.0|pF| |Small Signal CurrentGain
(IC= 10 mAdc, VCE= 10 Vdc, f = 100 MHz)|hfe|5.0|−|−|−| |**SWITCHING CHARACTERISTICS**|||||| |Storage Time
(IB1= IB2= IC= 10 mAdc)|ts|−|5.0|13|ns| |Turn−On Time
(VCC= 3.0 Vdc, IC= 10 mAdc, IB1= 3.0 mAdc)|ton|−|8.0|12|ns| |Turn−Off Time
(VCC= 3.0 Vdc, IC= 10 mAdc, IB1= 3.0 mAdc, IB2= 1.5 mAdc)|toff|−|10|18|ns| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width � 300 � s, Duty Cycle � 2.0%. **www.onsemi.com** **2** **MMBT2369L, MMBT2369AL** **==> picture [483 x 70] intentionally omitted <==** **----- Start of picture text -----**
+10.6 V t1 3 V 270 � +10.8 V t1 10 V 95 �
0
-1.5 V < 1 ns 3.3 k Cs* < 4 pF -2 V [0] < 1 ns 1 k Cs* < 12 pF
PULSE WIDTH (t1) = 300 ns PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2% DUTY CYCLE = 2%
**----- End of picture text -----**
*Total shunt capacitance of test jig and connectors. **Figure 1. ton Circuit − 10 mA** **Figure 2. ton Circuit − 100 mA** **==> picture [484 x 79] intentionally omitted <==** **----- Start of picture text -----**
+10.75 V t1 270 � +11.4 V t1 10 V 95 �
0
0
-9.15 V -8.6 V
< 1 ns 3.3 k Cs* < 4 pF < 1 ns 1 k Cs* < 12 pF
PULSE WIDTH (t1) = 300 ns PULSE WIDTH (t1) BETWEEN 1N916
DUTY CYCLE = 2% 10 AND 500 �s
DUTY CYCLE = 2%
**----- End of picture text -----**
*Total shunt capacitance of test jig and connectors. **Figure 3. toff Circuit − 10 mA** **Figure 4. toff Circuit − 100 mA** **==> picture [477 x 115] intentionally omitted <==** **----- Start of picture text -----**
TO OSCILLOSCOPE
TURN-ON WAVEFORMS
INPUT IMPEDANCE = 50 �
0Vin 10% 220 � 0.1 �F Vout RISE TIME = 1 ns TURN-OFF WAVEFORMS
Vout 90% Vin 3.3 k� 0 10%
t on 3.3 k 50 � Vin
0.0023 �F 0.0023 �F 90%
PULSE GENERATOR 50 � 0.005 �F 0.005 �F Vout
�Vin RISE TIME < 1 ns
�SOURCE IMPEDANCE = 50 �PW ≥ 300 ns � VBB [+] - 0.1 �F 0.1 �F +- VCC = 3 V t off VVinBB = -15 V = +12 V
**----- End of picture text -----**
**==> picture [68 x 7] intentionally omitted <==** **----- Start of picture text -----**
�DUTY CYCLE < 2%
**----- End of picture text -----**
**Figure 5. Turn−On and Turn−Off Time Test Circuit** **www.onsemi.com** **3** **MMBT2369L, MMBT2369AL** **==> picture [231 x 170] intentionally omitted <==** **----- Start of picture text -----**
6
5 TJ = 25°C LIMIT
TYPICAL
4
Cib
3 Cob
2
1
0.1 0.2 0.5 1.0 2.0 5.0 10
REVERSE BIAS (VOLTS)
CAPACITANCE (pF)
**----- End of picture text -----**
**Figure 6. Junction Capacitance Variations** **==> picture [234 x 170] intentionally omitted <==** **----- Start of picture text -----**
100
βF = 10
50 VCC = 10 V
VOB = 2 V
tr (VCC = 3 V) tf
20 VCC = 10 V
tr
10
5 ts
td
2
1 2 5 10 20 50 100
IC, COLLECTOR CURRENT (mA)
SWITCHING TIMES (nsec)
**----- End of picture text -----**
**Figure 7. Typical Switching Times** **==> picture [175 x 55] intentionally omitted <==** **----- Start of picture text -----**
C < COPT
C = 0
C COPT
TIME
**----- End of picture text -----**
**Figure 8. Turn−Off Waveform** **==> picture [202 x 69] intentionally omitted <==** **----- Start of picture text -----**
+6 V t1 10 V 980
0
-4 V
< 1 ns 500 Cs* < 3 pF
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%
**----- End of picture text -----**
**Figure 9. Storage Time Equivalent Test Circuit** **==> picture [480 x 184] intentionally omitted <==** **----- Start of picture text -----**
1.0
TJ = 25°C
0.8
IC = 3 mA IC = 10 mA IC = 30 mA IC = 50 mA IC = 100 mA
0.6
0.4
0.2
0.02 0.05 0.1 0.2 0.5 1 2 5 10 20
VCE, MAXIMUM COLLECTOR-EMITTER VOLTAGE (VOLTS) IB, BASE CURRENT (mA)
**----- End of picture text -----**
**Figure 10. Maximum Collector Saturation Voltage Characteristics** **www.onsemi.com** **4** **MMBT2369L, MMBT2369AL** **==> picture [482 x 172] intentionally omitted <==** **----- Start of picture text -----**
200
TJ = 125°C
VCE = 1 V
75°C
100
25°C
TJ = 25°C and 75°C
-15°C
50
-55°C
20
1 2 5 10 20 50 100
IC, COLLECTOR CURRENT (mA)
hFE, MINIMUM DC CURRENT GAIN
**----- End of picture text -----**
**Figure 11. Minimum Current Gain Characteristics** **==> picture [240 x 170] intentionally omitted <==** **----- Start of picture text -----**
1.4
βF = 10
1.2 TJ = 25°C
MAX VBE(sat)
1.0
0.8 MIN VBE(sat)
0.6
0.4
MAX VCE(sat)
0.2
1 2 5 10 20 50 100
IC, COLLECTOR CURRENT (mA)
V(sat), SATURATION VOLTAGE (VOLTS)
**----- End of picture text -----**
**Figure 12. Saturation Voltage Limits** **www.onsemi.com** **5** **MMBT2369L, MMBT2369AL** ## **PACKAGE DIMENSIONS** **SOT−23 (TO−236)** CASE 318−08 ISSUE AR **==> picture [468 x 325] intentionally omitted <==** **----- Start of picture text -----**
D NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
7 E a 1 3 s 2 HE T = 4. THE BASE MATERIAL.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
L A 0.89 1.00 1.11 0.035 0.039 0.044
3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020
e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008
TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120
E 1.20 1.30 1.40 0.047 0.051 0.055
e 1.78 1.90 2.04 0.070 0.075 0.080
L 0.30 0.43 0.55 0.012 0.017 0.022
A L1 0.35 0.54 0.69 0.014 0.021 0.027
H E 2.10 2.40 2.64 0.083 0.094 0.104
T 0 ° −−− 10 ° 0 ° −−− 10 °
St A1 SIDE VIEW SEE VIEW C RY c ESS STYLE 6:
END VIEW PIN 1. BASE
2. EMITTER
3. COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT
3X
2.90 r a 0.90
LO | cat
3X 0.80 tf LLL 0.95
PITCH
DIMENSIONS: MILLIMETERS
**----- End of picture text -----**
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