# Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 600 mA, 150 mW, SOT-323, Surface Mount ![Product image](https://novapart.co/image/farnell:2317589/) **URL**: https://novapart.co/products/MMBT2222AWT1G/bipolar-bjt-single-transistor-general-purpose-npn **SKU**: MMBT2222AWT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.0270 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:150mW; DC Collector Current:600mA; DC Current Gain hFE:35hFE; ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | MMBTxxxx | | Qualification | AEC-Q101 | | Power Dissipation | 150mW | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN | | Transition Frequency | 300MHz | | Transistor Case Style | SOT-323 | | Dc Current Gain Hfe Min | 35hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 600mA | | Collector Emitter Voltage Max | 40V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2317589/) ## MMBT2222AWT1G, SMMBT2222AWT1G ## General Purpose Transistor ## **NPN Silicon** These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. **www.onsemi.com** ## **Features** - AEC−Q101 Qualified and PPAP Capable **SC−70 CASE 419 STYLE 3** - S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* COLLECTOR 3 **MAXIMUM RATINGS Rating Symbol Value Unit** 1 Collector−Emitter Voltage VCEO 40 Vdc BASE Collector−Base Voltage VCBO 75 Vdc 2 Emitter−Base Voltage VEBO 6.0 Vdc EMITTER Collector Current − Continuous IC 600 mAdc ~~== «~~ **MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit** Total Device Dissipation FR−5 Board PD 150 mW P1 M TA = 25 ° C Thermal Resistance, Junction−to−Ambient R JA 280 ° C/W 1 “ Junction and Storage Temperature TJ, Tstg −55 to +150 ° C P1 M 1 “ P1 = Specific Device Code M = Date Code = Pb−Free Package Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) **ORDERING INFORMATION Device Package Shipping**[†] MMBT2222AWT1G SC−70 3,000 / (Pb−Free) Tape & Reel SMMBT2222AWT1G SC−70 3,000 / (Pb−Free) Tape & Reel ~~==~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **MMBT2222AWT1/D** **1** © Semiconductor Components Industries, LLC, 2011 **July, 2018 − Rev. 8** ## **MMBT2222AWT1G, SMMBT2222AWT1G** **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||| |---|---|---|---|---|---| |**Characteristic**||**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Collector−Emitter Breakdown Voltage (Note 1)
(IC= 10 mAdc, IB= 0)||V(BR)CEO|40|−|Vdc| |Collector−Base Breakdown Voltage
(IC= 10�Adc, IE= 0)||V(BR)CBO|75|−|Vdc| |Emitter−Base Breakdown Voltage
(IE= 10�Adc, IC= 0)||V(BR)EBO|6.0|−|Vdc| |Base Cutoff Current
(VCE= 60 Vdc, VEB= 3.0 Vdc)||IBL|−|20|nAdc| |Collector Cutoff Current
(VCE= 60 Vdc, VEB= 3.0 Vdc)||ICEX|−|10|nAdc| |**ON CHARACTERISTICS**(Note 1)|||||| |DC Current Gain (Note 1)
(IC= 0.1 mAdc, VCE= 10 Vdc)
(IC= 1.0 mAdc, VCE= 10 Vdc)
(IC= 10 mAdc, VCE= 10 Vdc)
(IC= 150 mAdc, VCE= 10 Vdc)
(IC= 500 mAdc, VCE= 10 Vdc)||HFE|35
50
75
100
40|−
−
−
300
−|−| |Collector−Emitter Saturation Voltage (Note 1)
(IC= 150 mAdc, IB= 15 mAdc)
(IC= 500 mAdc, IB= 50 mAdc)||VCE(sat)|−
−|0.3
1.0|Vdc| |Base−Emitter Saturation Voltage (Note 1)
(IC= 150 mAdc, IB= 15 mAdc)
(IC= 500 mAdc, IB= 50 mAdc)||VBE(sat)|0.6
−|1.2
2.0|Vdc| |**SMALL−SIGNAL CHARACTERISTICS**|||||| |Current−Gain − Bandwidth Product
(IC= 20 mAdc, VCE= 20 Vdc, f = 100 MHz)||fT|300|−|MHz| |Output Capacitance
(VCB= 10 Vdc, IE= 0, f = 1.0 MHz)||Cobo|−|8.0|pF| |Input Capacitance
(VEB= 0.5 Vdc, IC= 0, f = 1.0 MHz)||Cibo|−|30|pF| |Input Impedance
(VCE= 10 Vdc, IC= 10 mAdc, f = 1.0 kHz)||hie|0.25|1.25|k�| |Voltage Feedback Ratio
(VCE= 10 Vdc, IC= 10 mAdc, f = 1.0 kHz)||hre|−|4.0|X 10−4| |Small−Signal Current Gain
(VCE= 10 Vdc, IC= 10 mAdc, f = 1.0 kHz)||hfe|75|375|−| |Output Admittance
(VCE= 10 Vdc, IC= 10 mAdc, f = 1.0 kHz)||hoe|25|200|�mhos| |Noise Figure
(VCE= 10 Vdc, IC= 100�Adc, RS= 1.0 k�, f = 1.0 kHz)||NF|−|4.0|dB| |**SWITCHING CHARACTERISTICS**|||||| |Delay Time|(VCC= 3.0 Vdc, VBE= −0.5 Vdc,
IC= 150 mAdc, IB1= 15 mAdc)|td|−|10|ns| |Rise Time||tr|−|25|| |Storage Time|(VCC= 30 Vdc, IC= 150 mAdc,
IB1= IB2= 15 mAdc)|ts|−|225|ns| |Fall Time||tf|−|60|| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width � 300 � s, Duty Cycle � 2.0%. **www.onsemi.com** **2** **MMBT2222AWT1G, SMMBT2222AWT1G** ## **SWITCHING TIME EQUIVALENT TEST CIRCUITS** **==> picture [481 x 95] intentionally omitted <==** **----- Start of picture text -----**
+�30 V +�30 V
1.0 to 100 �s, 200 1.0 to 100 �s, 200
+16 V DUTY CYCLE ≈ 2.0% +16 V DUTY CYCLE ≈ 2.0%
0 0
-�2 V < 2 ns 1 k� CS* < 10 pF -14 V < 20 ns 1 k CS* < 10 pF
1N914
Scope rise time < 4 ns -�4 V
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*Total shunt capacitance of test jig, connectors, and oscilloscope. **Figure 1. Turn−On Time** **Figure 2. Turn−Off Time** **==> picture [488 x 369] intentionally omitted <==** **----- Start of picture text -----**
1000
700
500 TJ = 125 ° C
300
200
25°C
100
70 -55°C
50
30 V CE = 1.0 V
20 VCE = 10 V
10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0 k
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
1.0
TJ = 25 ° C
0.8
0.6 IC = 1.0 mA 10 mA 150 mA 500 mA
0.4
0.2
50
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30
IB, BASE CURRENT (mA)
hFE, DC CURRENT GAIN
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
**----- End of picture text -----**
**Figure 4. Collector Saturation Region** **www.onsemi.com** **3** **MMBT2222AWT1G, SMMBT2222AWT1G** **==> picture [487 x 596] intentionally omitted <==** **----- Start of picture text -----**
200 500
IC/IB = 10 VCC = 30 V
1007050 tr @ VCC = 30 V TJ = 25°C 300200 t′s = ts - 1/8 tf ITICB1J/I = 25 = IB = 10B2°C
td @ VEB(off) = 2.0 V 100
30 td @ VEB(off) = 0
70
20 50 tf
30
10
20
7.0
5.0
10
3.0
7.0
2.0 5.0
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Turn−On Time Figure 6. Turn−Off Time
10 10
RS = OPTIMUM f = 1.0 kHz
8.0 I500 C = 1.0 mA, R�A, RS = 200 S = 150 � � RRSS = = SOURCERESISTANCE 8.0 IC = 50 �A
100 �A, RS = 2.0 k� 100 �A
6.0 50 �A, RS = 4.0 k� 6.0 500 �A
1.0 mA
4.0 4.0
2.0 2.0
0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects Figure 8. Source Resistance Effects
30 500
VCE = 20 V
20 TJ = 25°C
300
Ceb
10 200
7.0
5.0
100
Ccb
3.0 70
2.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
t, TIME (ns) t, TIME (ns)
NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB)
CAPACITANCE (pF)
fT, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
**----- End of picture text -----**
**Figure 9. Capacitances** **Figure 10. Current−Gain Bandwidth Product** **www.onsemi.com** **4** **MMBT2222AWT1G, SMMBT2222AWT1G** **==> picture [492 x 590] intentionally omitted <==** **----- Start of picture text -----**
1 1.3
IC/IB = 10 1.2 IC/IB = 10
1.1
150 ° C
1.0
0.9 −55 ° C
0.8
0.1 25 ° C
0.7
−55 ° C 0.6
0.5 150 ° C
25 ° C 0.4
0.3
0.01 0.2
0.001 0.01 0.1 1 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 11. Collector Emitter Saturation Voltage Figure 12. Base Emitter Saturation Voltage vs.
vs. Collector Current Collector Current
1.2 +0.5
1.1 VCE = 1 V
1.0 0 R�VC for VCE(sat)
0.9 −55 ° C -�0.5
0.8
25 ° C
0.7 -�1.0
0.6
-�1.5
0.5 150 ° C
0.4
-�2.0 R�VB for VBE
0.3
0.2 -�2.5
0.001 0.01 0.1 1 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA)
Figure 13. Base Emitter Voltage vs. Collector Figure 14. Temperature Coefficients
Current
10
10 ms
100 ms
1 1 ms
1 s
Thermal Limit
0.1
0.01
Single Pulse Test
@ TA = 25 ° C
0.001
0.01 0.1 1 10 100
VCE (Vdc)
, BASE−EMITTER
, COLLECTOR−EMITTER
BE(sat)
V
SATURATION VOLTAGE (V) SATURATION VOLTAGE (V)
CE(sat)
V
°
COEFFICIENT (mV/ C)
, BASE−EMITTER VOLTAGE (V)
BE(on)
V
IC (A)
**----- End of picture text -----**
**Figure 15. Safe Operating Area** **www.onsemi.com** **5** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [37 x 36] intentionally omitted <==** **SC−70 (SOT−323)** CASE 419 ISSUE P **==> picture [81 x 8] intentionally omitted <==** **----- Start of picture text -----**
DATE 07 OCT 2021
**----- End of picture text -----**
**SCALE 4:1** ## **GENERIC MARKING DIAGRAM** **==> picture [116 x 78] intentionally omitted <==** **----- Start of picture text -----**
XX M �
�
1
XX = Specific Device Code
M = Date Code
� = Pb−Free Package
**----- End of picture text -----**
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. **==> picture [191 x 63] intentionally omitted <==** **----- Start of picture text -----**
STYLE 1: STYLE 2: STYLE 3:
CANCELLED PIN 1. ANODE PIN 1. BASE
2. N.C. 2. EMITTER
3. CATHODE 3. COLLECTOR
STYLE 6: STYLE 7: STYLE 8:
PIN 1. EMITTER PIN 1. BASE PIN 1. GATE
2. BASE 2. EMITTER 2. SOURCE
3. COLLECTOR 3. COLLECTOR 3. DRAIN
**----- End of picture text -----**
**==> picture [206 x 63] intentionally omitted <==** **----- Start of picture text -----**
STYLE 4: STYLE 5:
PIN 1. CATHODE PIN 1. ANODE
2. CATHODE 2. ANODE
3. ANODE 3. CATHODE
STYLE 9: STYLE 10: STYLE 11:
PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE
2. CATHODE 2. ANODE 2. CATHODE
3. CATHODE-ANODE 3. ANODE-CATHODE 3. CATHODE
**----- End of picture text -----**
## **DOCUMENT NUMBER: 98ASB42819B** **DESCRIPTION: SC−70 (SOT−323)** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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