# Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 150 mW, SOT-523, Surface Mount

![Product image](https://novapart.co/image/farnell:1773613RL/)

**URL**: https://novapart.co/products/MMBT2222AT-7-F/bipolar-bjt-single-transistor-npn-40-v-600-ma-150
**SKU**: MMBT2222AT-7-F
**Manufacturer**: DIODES INC.
**Price**: €0.0400
**Stock**: 10+
**Lead Time**: 99 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:150mW; DC Collector Current:600mA; DC Current Gain hFE:100hFE; Transistor Cas

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 150mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 300MHz |
| Transistor Case Style | SOT-523 |
| Dc Current Gain Hfe Min | 100hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 600mA |
| Collector Emitter Voltage Max | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1773613RL/)

**MMBT2222AT** 

**NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR** 

## Be).= 

## **Features** 

• Epitaxial Planar Die Construction A **SOT-523** • Complementary PNP Type Available (MMBT2907AT) C • Ultra-Small Surface Mount Package _ fi > ~~Too~~ **Dim Min Max Typ** • **Lead Free/RoHS Compliant (Note 2)** ~~TOP VIEW~~ B C **A** 0.15 0.30 0.22 • **"Green" Device (Note 3 and 4)** ~~nen eT~~ **B** 0.75 0.85 0.80 B E ~~a |~~ l ~~h) TST~~ **C** 1.45 1.75 1.60 ~~4~~ **Mechanical Data** ~~G TST H~~ **D** ⎯ ⎯ 0.50 • Case: SOT-523 • Case Material:  Molded Plastic.  UL Flammability K **G** 0.90 1.10 1.00 Classification Rating 94V-0 N M **H** 1.50 1.70 1.60 • Moisture Sensitivity:  Level 1 per J-STD-020C ~~equ,~~ • Terminals:  Solderable per MIL-STD-202, Method 208 J ~~FLEE~~ **J** 0.00 0.10 0.05 D L • Lead Free Plating (Matte Tin Finish annealed over **K** 0.60 0.80 0.75 ~~ET~~ Alloy 42 leadframe). C • Terminal Connections: See Diagram ~~TT~~ **L** 0.10 0.30 0.22 • Marking Information: 1P, See Page 4 **M** 0.10 0.20 0.12 ~~eT~~ • Ordering & Date Code Information: See Page 4 **N** 0.45 0.65 0.50 • Weight: 0.002 grams (approximate) ~~TST4~~ B E α 0° 8° ⎯ ~~Tee~~ **All Dimensions in mm** ~~I~~ 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|75|V|
|Collector-Emitter Voltage|VCEO|40|V|
|Emitter-Base Voltage|VEBO|6.0|V|
|Collector Current - Continuous|IC|600|mA|
|Power Dissipation                                                                (Note 1)|Pd|150|mW|
|Thermal Resistance, Junction to Ambient                           (Note 1)|RθJA|833|°C/W|
|Operating and Storage Temperature Range|Tj, TSTG|-55 to +150|°C|



Notes: 1.  Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 

2.  No purposefully added lead 

3.  Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 

4.  Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 

MMBT2222AT © Diodes Incorporated 

DS30268 Rev. 10 - 2 

1 of 4 

**www.diodes.com** 

**Electrical Characteristics** @TA = 25°C unless otherwise specified 

~~DG~~ **Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5)** ~~po~~ Collector-Base Breakdown Voltage V(BR)CBO 75 ⎯ V IC = 10μA, IE = 0 ~~GG~~ Collector-Emitter Breakdown Voltage V(BR)CEO 40 ⎯ V ~~GO~~ IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ⎯ V IE = 10μA, IC = 0 ~~pOGG~~ Collector Cutoff Current ICEX ⎯ 10 nA ~~GO~~ VCE = 60V, VEB(OFF) = 3.0V ~~pe~~ Base Cutoff Current IBL ⎯ 20 nA VCE = 60V, VEB(OFF) = 3.0V ~~pT~~ **ON CHARACTERISTICS (Note 5)** 35 ⎯ IC =  100μA, VCE =  10V 50 ⎯ IC =  1.0mA, VCE =  10V DC Current Gain hFE 75 ⎯ ⎯ IC =  10mA, VCE =  10V 100 300 IC = 150mA, VCE =  10V 40 ⎯ IC = 500mA, VCE =  10V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.3 1.0 V IIC C = 500mA, I= 150mA, IBB = 15mA  = 50mA 0.6 1.2 IC = 150mA, IB = 15mA Base-Emitter Saturation Voltage VBE(SAT) ⎯ 2.0 V IC = 500mA, IB = 50mA ~~pT~~ **SMALL SIGNAL CHARACTERISTICS** ~~GG~~ Output Capacitance Cobo ⎯ 8 pF ~~OO~~ VCB = 10V, f = 1.0MHz, IE = 0 ~~pf~~ Input Capacitance Cibo — 30 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Current Gain-Bandwidth Product fT 300 ⎯ MHz Vf = 100MHz CE = 20V, IC = 20mA, ~~GG~~ Input Impedance hie 0.25 1.25 kΩ ~~GO~~ VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz Voltage Feedback Ratio hre ⎯ 4.0 X 10-4 VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz ~~poGG~~ Small-Signal Current Gain hfe 75 375 ⎯ ~~GO~~ VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz ~~pe~~ Output Admittance hoe 25 200 μS VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz ~~pT~~ **SWITCHING CHARACTERISTICS** Delay Time td ⎯ 10 ns VCC = 30V, IC = 150mA, ~~ee~~ Rise Time tr ⎯ 25 ns VBE(off) = - 0.5V, IB1 = 15mA ~~a~~ Storage Time ~~ee~~ ts ~~ee~~ ⎯ ~~ee~~ 225 ~~oe~~ ns V ~~a~~ CC = 30V, IC = 150mA, ~~aee~~ Fall Time Notes: 5.  Short duration pulse test used to minimize self-heating effect. ~~ee~~ tf ~~ee~~ ⎯ ~~ee~~ 60 ~~ae~~ ns I ~~a~~ B1 = IB2 = 15mA 

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250<br>“ne<br>200<br>150<br>100 aN .<br>50<br>X<br>0 Ty PEN EE<br>0 40 80 120 N 160 200<br>TA, AMBIENT TEMPERATURE (°C)<br>Fig. 1 Power Derating Curve<br>, POWER DISSIPATION (mW)<br>d<br>P<br>**----- End of picture text -----**<br>


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1,000<br>EEre t<br>TA = 125°C<br>ge HITTITE CTT<br>aE a eT<br>100<br>TA = -25°C TA = +25°C<br>|<br>10<br>nti eel ei<br>VCE = 1.0V<br>1 a e a<br>0.1 | LUI 1 IT 10 ETT 100 1,000 ul<br>IC, COLLECTOR CURRENT (mA)<br>Fig. 2  Typical DC Current Gain vs.<br>Collector Current<br>, DC CURRENT GAIN<br>FE<br>h<br>**----- End of picture text -----**<br>


MMBT2222AT © Diodes Incorporated 

DS30268 Rev. 10 - 2 

2 of 4 

**www.diodes.com** 

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LoS.<br>2.0<br>IC = 30mA<br>f = 1MHz 1.8 IC = 1mA<br>IC = 10mA<br>1.6<br>° eT TT IC = 100mA<br>NEEL 1.4 Str HT<br>IC = 300mA<br>1.2<br>INTE CT<br>1.0<br>s TTT Cibo P CTC<br>0.8<br>C H E N 7 LL 0.6 B n 00 n<br>0.4<br>Cobo<br>SSOCEPTTEELE TTL TTT<br>oH 0.2 CCT<br>0 0 CTST=ST<br>TTT 0.001 0.01 0.1 FSS 1 10 100<br>VR, REVERSE VOLTAGE (V) IB, BASE CURRENT (mA)<br>Fig. 3  Typical Capacitance Characteristics Fig. 4  Typical Collector Saturation Region<br>0.5 1.0<br>IC<br>IB [= 10] 0.9 VCE = 5V<br>0.4<br>LT 0.8 oR TA = -50°C<br>TA = 25°C<br>0.3 LN 0.7 1 TA = 25°C<br>TA = 150°C 0.6<br>0.2 aa ee n SeAU maTTee eae aTT<br>0.5<br>TA = 150°C<br>SS 0.4 mee<br>a aA 0el al<br>0.1<br>0.3<br>TA = -50°C<br>0 oeTl 0.2 enTull atlELITE EELll<br>1 10 100 1,000 0.1 1 10 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Fig. 5  Typical Collector Emitter Saturation Voltage Fig. 6  Typical Base Emitter Voltage<br>vs. Collector Current vs. Collector Current<br>1,000<br>VCE = 5V<br>c a<br>100<br>ait ||<br>10<br>|<br>1 CCIE Co<br>1 10 100<br>IC, COLLECTOR CURRENT (mA)<br>Fig. 7  Typical Gain Bandwidth Product vs. Collector Current<br>CAPACITANCE (pF)<br>, COLLECTOR-EMITTER VOLTAGE (V)<br>CE<br>V<br>, COLLECTOR TO EMITTER , BASE EMITTER VOLTAGE (V)<br>SATURATION VOLTAGE (V)<br>CE(SAT)<br>V BE(ON)<br>V<br>GAIN BANDWIDTH PRODUCT (MHz)<br>,<br>fT<br>**----- End of picture text -----**<br>


MMBT2222AT © Diodes Incorporated 

DS30268 Rev. 10 - 2 

3 of 4 

**www.diodes.com** 

## **Ordering Information** (Note 6) 

**Device Packaging Shipping** MMBT2222AT-7-F SOT-523 3000/Tape & Reel 

Notes: 6.   For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 

## **Marking Information** 

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1P = Product Type Marking Code<br>1PYM YM = Date Code Marking<br>Y = Year (ex: N = 2002)<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012<br>Code J  K  L  M  N  P  R  S  T  U  V  W  X  Y  Z<br>ttEE EE EEE<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>Code 1  2  3  4  5  6  7  8  9  O  N  D<br>ttE<br>**----- End of picture text -----**<br>


## IMPORTANT NOTICE 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. 

LIFE SUPPORT 

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 

MMBT2222AT © Diodes Incorporated 

DS30268 Rev. 10 - 2 

4 of 4 

**www.diodes.com** 



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