# Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 225 mW, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:2627984RL/)

**URL**: https://novapart.co/products/MMBT2222ALT3G/bipolar-bjt-single-transistor-npn-40-v-600-ma-225
**SKU**: MMBT2222ALT3G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.0210
**Stock**: 10+
**Lead Time**: 82 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:225mW; DC Collector Current:600mA; DC Current Gain hFE:40hFE; Tr

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | MMBTxxxx |
| Qualification | AEC-Q101 |
| Power Dissipation | 225mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 300MHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 40hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 600mA |
| Collector Emitter Voltage Max | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2627984RL/)

**DATA SHEET www.onsemi.com** 

## General Purpose Transistors **NPN Silicon** 

## MMBT2222L, MMBT2222AL, SMMBT2222AL 

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COLLECTOR<br>3<br>1<br>BASE<br>2<br>EMITTER<br>**----- End of picture text -----**<br>


## **Features** 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Collector−Emitter Voltage<br>MMBT2222L<br>MMBT2222AL, SMMBT2222AL|VCEO|30<br>40|Vdc|
|Collector−Base Voltage<br>MMBT2222L<br>MMBT2222AL, SMMBT2222AL|VCBO|60<br>75|Vdc|
|Emitter−Base Voltage<br>MMBT2222L<br>MMBT2222AL, SMMBT2222AL|VEBO|5.0<br>6.0|Vdc|
|Collector Current − Continuous|IC|600|mAdc|
|Collector Current − Peak (Note 3)|ICM|1100|mAdc|



## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Total Device Dissipation FR−5 Board<br>(Note 1) TA= 25°C<br>Derate above 25°C|PD|225<br>1.8|mW<br>mW/°C|
|Thermal Resistance, Junction−to−Ambient|R�JA|556|°C/W|
|Total Device Dissipation Alumina<br>Substrate (Note 2) TA= 25°C<br>Derate above 25°C|PD|300<br>2.4|mW<br>mW/°C|
|Thermal Resistance, Junction−to−Ambient|R�JA|417|°C/W|
|Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C|



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3<br>1<br>2<br>**----- End of picture text -----**<br>


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SOT−23<br>CASE 318<br>STYLE 6<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

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**----- Start of picture text -----**<br>
xxx M  �<br>�<br>1<br>xxx = 1P or M1B<br>M = Date Code*<br>� = Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


*Date Code orientation and/or overbar may vary depending upon manufacturing location. 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. FR−5 = 1.0 � 0.75 � 0.062 in. 

2. Alumina = 0.4 � 0.3 � 0.024 in. 99.5% alumina. 

3. Reference SOA curve. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 1994 **August, 2021 − Rev. 12** 

**MMBT2222LT1/D** 

**MMBT2222L, MMBT2222AL, SMMBT2222AL** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Collector−Emitter Breakdown Voltage (IC= 10 mAdc, IB= 0)<br>MMBT2222<br>MMBT2222A|V(BR)CEO|30<br>40|−<br>−|Vdc|
|Collector−Base Breakdown Voltage (IC= 10�Adc, IE= 0)<br>MMBT2222<br>MMBT2222A|V(BR)CBO|60<br>75|−<br>−|Vdc|
|Emitter−Base Breakdown Voltage (IE= 10�Adc, IC= 0)<br>MMBT2222<br>MMBT2222A|V(BR)EBO|5.0<br>6.0|−<br>−|Vdc|
|Collector Cutoff Current<br>(VCE= 60 Vdc, VEB(off)= 3.0 Vdc)<br>MMBT2222A, SMMBT2222A|ICEX|−|10|nAdc|
|Collector Cutoff Current (VCB= 50 Vdc, IE= 0)<br>MMBT2222<br>(VCB= 60 Vdc, IE= 0)<br>MMBT2222A, SMMBT2222A<br>(VCB= 50 Vdc, IE= 0, TA= 125°C)<br>MMBT2222<br>(VCB= 60 Vdc, IE= 0, TA= 125°C)<br>MMBT2222A, SMMBT2222A|ICBO|−<br>−<br>−<br>−|0.01<br>0.01<br>10<br>10|�Adc|
|Emitter Cutoff Current (VEB= 3.0 Vdc, IC= 0)<br>MMBT2222A, SMMBT2222A|IEBO|−|100|nAdc|
|Base Cutoff Current (VCE= 60 Vdc, VEB(off)= 3.0 Vdc) MMBT2222A, SMMBT2222A|IBL|−|20|nAdc|
|**ON CHARACTERISTICS**|||||
|DC Current Gain<br>(IC= 0.1 mAdc, VCE= 10 Vdc)<br>(IC= 1.0 mAdc, VCE= 10 Vdc)<br>(IC= 10 mAdc, VCE= 10 Vdc)<br>(IC= 10 mAdc, VCE= 10 Vdc, TA= −55°C)<br>MMBT2222A only<br>(IC= 150 mAdc, VCE= 10 Vdc) (Note 4)<br>(IC= 150 mAdc, VCE= 1.0 Vdc) (Note 4)<br>(IC= 500 mAdc, VCE= 10 Vdc) (Note 4)<br>MMBT2222<br>MMBT2222A, SMMBT2222A|hFE|35<br>50<br>75<br>35<br>100<br>50<br>30<br>40|−<br>−<br>−<br>−<br>300<br>−<br>−<br>−|−|
|Collector−Emitter Saturation Voltage (Note 4)<br>(IC= 150 mAdc, IB= 15 mAdc)<br>MMBT2222<br>MMBT2222A, SMMBT2222A<br>(IC= 500 mAdc, IB= 50 mAdc)<br>MMBT2222<br>MMBT2222A, SMMBT2222A|VCE(sat)|−<br>−<br>−<br>−|0.4<br>0.3<br>1.6<br>1.0|Vdc|
|Base−Emitter Saturation Voltage (Note 4)<br>(IC= 150 mAdc, IB= 15 mAdc)<br>MMBT2222<br>MMBT2222A, SMMBT2222A<br>(IC= 500 mAdc, IB= 50 mAdc)<br>MMBT2222<br>MMBT2222A, SMMBT2222A|VBE(sat)|−<br>0.6<br>−<br>−|1.3<br>1.2<br>2.6<br>2.0|Vdc|
|**SMALL−SIGNAL CHARACTERISTICS**|||||
|Current−Gain − Bandwidth Product (Note 5)<br>(IC= 20 mAdc, VCE= 20 Vdc, f = 100 MHz)<br>MMBT2222<br>MMBT2222A, SMMBT2222A|fT|250<br>300|−<br>−|MHz|
|Output Capacitance<br>(VCB= 10 Vdc, IE= 0, f = 1.0 MHz)|Cobo|−|8.0|pF|
|Input Capacitance<br>(VEB= 0.5 Vdc, IC= 0, f = 1.0 MHz)<br>MMBT2222<br>MMBT2222A, SMMBT2222A|Cibo|−<br>−|30<br>25|pF|
|Input Impedance<br>(IC= 1.0 mAdc, VCE= 10 Vdc, f = 1.0 kHz)<br>MMBT2222A, SMMBT2222A<br>(IC= 10 mAdc, VCE= 10 Vdc, f = 1.0 kHz)<br>MMBT2222A, SMMBT2222A|hie|2.0<br>0.25|8.0<br>1.25|k�|
|Voltage Feedback Ratio<br>(IC= 1.0 mAdc, VCE= 10 Vdc, f = 1.0 kHz)<br>MMBT2222A, SMMBT2222A<br>(IC= 10 mAdc, VCE= 10 Vdc, f = 1.0 kHz)<br>MMBT2222A, SMMBT2222A|hre|−<br>−|8.0<br>4.0|X 10−4|
|Small−Signal Current Gain<br>(IC= 1.0 mAdc, VCE= 10 Vdc, f = 1.0 kHz)<br>MMBT2222A, SMMBT2222A<br>(IC= 10 mAdc, VCE= 10 Vdc, f = 1.0 kHz)<br>MMBT2222A, SMMBT2222A|hfe|50<br>75|300<br>375|−|



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**2** 

**MMBT2222L, MMBT2222AL, SMMBT2222AL** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Min**|**Max**|**Unit**|
|**SMALL−SIGNAL CHARACTERISTICS**||||||
|Output Admittance<br>(IC= 1.0 mAdc, VCE= 10 Vdc, f = 1.0 kHz)<br>MMBT2222A, SMMBT2222A<br>(IC= 10 mAdc, VCE= 10 Vdc, f = 1.0 kHz)<br>MMBT2222A, SMMBT2222A||hoe|5.0<br>25|35<br>200|�mhos|
|Collector Base Time Constant<br>(IE= 20 mAdc, VCB= 20 Vdc, f = 31.8 MHz)<br>MMBT2222A, SMMBT2222A||rb, Cc|−|150|ps|
|Noise Figure (IC= 100�Adc, VCE= 10 Vdc, RS= 1.0 k�, f = 1.0 kHz)<br>MMBT2222A, SMMBT2222A||NF|−|4.0|dB|
|**SWITCHING CHARACTERISTICS (MMBT2222A only)**||||||
|Delay Time|(VCC= 30 Vdc, VBE(off)= −0.5 Vdc,<br>IC= 150 mAdc, IB1= 15 mAdc)|td|−|10|ns|
|Rise Time||tr|−|25||
|Storage Time|(VCC= 30 Vdc, IC= 150 mAdc,<br>IB1= IB2= 15 mAdc)|ts|−|225|ns|
|Fall Time||tf|−|60||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width � 300 � s, Duty Cycle � 2.0%. 

5. fT is defined as the frequency at which |hfe| extrapolates to unity. 

## **SWITCHING TIME EQUIVALENT TEST CIRCUITS** 

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+�30 V +�30 V<br>1.0 to 100 �s, 200 1.0 to 100 �s, 200<br>+16 V DUTY CYCLE ≈ 2.0% +16 V DUTY CYCLE ≈ 2.0%<br>0 0<br>-�2 V < 2 ns 1 k� CS* < 10 pF -14 V < 20 ns 1 k CS* < 10 pF<br>1N914<br>Scope rise time < 4 ns -�4 V<br>*Total shunt capacitance of test jig, connectors, and oscilloscope.<br>Figure 1. Turn−On Time Figure 2. Turn−Off Time<br>1000<br>700<br>500 TJ = 125°C<br>300<br>200<br>25°C<br>100<br>70 -55°C<br>50<br>30<br>VCE = 1.0 V<br>20 V CE  = 10 V<br>10<br>0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0 k<br>IC, COLLECTOR CURRENT (mA)<br>hFE, DC CURRENT GAIN<br>**----- End of picture text -----**<br>


**Figure 3. DC Current Gain** 

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**3** 

**MMBT2222L, MMBT2222AL, SMMBT2222AL** 

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1.0<br>TJ = 25°C<br>0.8<br>0.6 I C  = 1.0 mA 10 mA 150 mA 500 mA<br>0.4<br>0.2<br>0<br>0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50<br>IB, BASE CURRENT (mA)<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 4. Collector Saturation Region** 

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200 500<br>IC/IB = 10 VCC = 30 V<br>1007050 tr @ VCC = 30 V TJ = 25°C 300200 t′s = ts - 1/8 tf ITICB1J/I = 25 = IB = 10B2°C<br>td @ VEB(off) = 2.0 V 100<br>30 td @ VEB(off) = 0<br>70<br>20 50 tf<br>30<br>10<br>20<br>7.0<br>5.0<br>10<br>3.0<br>7.0<br>2.0 5.0<br>5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 5. Turn−On Time Figure 6. Turn−Off Time<br>10 10<br>RS = OPTIMUM f = 1.0 kHz<br>8.0 500 IC = 1.0 mA, R�A, RS = 200 S = 150 � � RRSS =  = SOURCERESISTANCE 8.0 IC = 50 �A<br>100 �A, RS = 2.0 k� 100 �A<br>6.0 50 �A, RS = 4.0 k� 6.0 500 �A<br>1.0 mA<br>4.0 4.0<br>2.0 2.0<br>0 0<br>0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k<br>f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS)<br>t, TIME (ns) t, TIME (ns)<br>NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB)<br>**----- End of picture text -----**<br>


**Figure 7. Frequency Effects** 

**Figure 8. Source Resistance Effects** 

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**4** 

**MMBT2222L, MMBT2222AL, SMMBT2222AL** 

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**----- Start of picture text -----**<br>
30 500<br>VCE = 20 V<br>20 TJ = 25°C<br>300<br>Ceb<br>10 200<br>7.0<br>5.0<br>100<br>Ccb<br>3.0 70<br>2.0 50<br>0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100<br>REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)<br>Figure 9. Capacitances Figure 10. Current−Gain Bandwidth Product<br>1 1.3<br>IC/IB = 10 1.2 IC/IB = 10<br>1.1<br>150 ° C<br>1.0<br>0.9 −55 ° C<br>0.8<br>0.1 25 ° C<br>0.7<br>−55 ° C 0.6<br>150 ° C<br>0.5<br>25 ° C 0.4<br>0.3<br>0.01 0.2<br>0.001 0.01 0.1 1 0.001 0.01 0.1 1<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 11. Collector Emitter Saturation Voltage Figure 12. Base Emitter Saturation Voltage vs.<br>vs. Collector Current Collector Current<br>1.2 +0.5<br>1.1 VCE = 1 V<br>1.0 0 R�VC for VCE(sat)<br>0.9 −55 ° C -�0.5<br>0.8<br>25 ° C<br>0.7 -�1.0<br>0.6<br>-�1.5<br>0.5 150 ° C<br>0.4<br>-�2.0 R�VB for VBE<br>0.3<br>0.2 -�2.5<br>0.001 0.01 0.1 1 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA)<br>CAPACITANCE (pF)<br>fT, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)<br>, BASE−EMITTER<br>, COLLECTOR−EMITTER<br>BE(sat)<br>V<br>SATURATION VOLTAGE (V) SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>°<br>COEFFICIENT (mV/  C)<br>, BASE−EMITTER VOLTAGE (V)<br>BE(on)<br>V<br>**----- End of picture text -----**<br>


**Figure 13. Base Emitter Voltage vs. Collector Current** 

**Figure 14. Temperature Coefficients** 

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**5** 

**MMBT2222L, MMBT2222AL, SMMBT2222AL** 

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**----- Start of picture text -----**<br>
10<br>10 ms<br>100 ms<br>1 1 ms<br>1 s<br>Thermal Limit<br>0.1<br>0.01<br>Single Pulse Test<br>@ TA = 25 ° C<br>0.001<br>0.01 0.1 1 10 100<br>VCE (Vdc)<br>IC (A)<br>**----- End of picture text -----**<br>


**Figure 15. Safe Operating Area** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**||||
|---|---|---|---|
|**Device**|**Specific Marking Code**|**Package**|**Shipping**†|
|MMBT2222LT1G|M1B|SOT−23<br>(Pb−Free)|3000 / Tape & Reel|
|MMBT2222ALT1G,<br>SMMBT2222ALT1G|1P|SOT−23<br>(Pb−Free)|3000 / Tape & Reel|
|MMBT2222LT3G|M1B|SOT−23<br>(Pb−Free)|10,000 / Tape & Reel|
|MMBT2222ALT3G,<br>SMMBT2222ALT3G|1P|SOT−23<br>(Pb−Free)|10,000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

*S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. 

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**6** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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SOT−23 (TO−236)<br>CASE 318−08<br>ISSUE AS<br>2 DATE 30 JAN 2018<br>SCALE 4:1<br>D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>“a 3 t = THE BASE MATERIAL.<br>| E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>= T 0 ° −−− 10 ° 0 ° −−− 10 °<br>a A1 SIDE VIEW SEE VIEW C c<br>GENERIC<br>END VIEW<br>MARKING DIAGRAM*<br>RECOMMENDED<br>SOLDERING FOOTPRINT XXXM<br>1<br>2.90 i 0.903X XXX = Specific Device Code oo<br>M = Date Code<br>= Pb−Free Package<br>LO | cr ,<br>*This information is generic. Please refer to<br>3X 0.80 a) LL 0.95 device data sheet for actual part marking.<br>PITCH Pb−Free indicator, “G” or microdot “ ”, |<br>DIMENSIONS: MILLIMETERS may or may not be present.<br>STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:<br>CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE<br>2. EMITTER 2. BASE 2. NO CONNECTION<br>3. COLLECTOR 3. COLLECTOR 3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:<br>PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE<br>2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE<br>3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE<br>STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:<br>PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE<br>2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE<br>3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE<br>STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:<br>PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE<br>2. SOURCE 2. OUTPUT 2. ANODE  2. DRAIN  2. CATHODE  2. ANODE<br>3. DRAIN 3. INPUT 3. CATHODE  3. SOURCE  3. GATE  3. NO CONNECTION<br>STYLE 27: STYLE 28:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. CATHODE  2. ANODE<br> 3. CATHODE  3. ANODE<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42226B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: SOT−23 (TO−236) PAGE 1 OF 1<br>aes<br>ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.<br>ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding<br>the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically<br>disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the<br>rights of others.<br>**----- End of picture text -----**<br>


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**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi’s** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative 

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## Links

- [View this product on Novapart](https://novapart.co/products/MMBT2222ALT3G/bipolar-bjt-single-transistor-npn-40-v-600-ma-225)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/on-semiconductor/mmbt2222alt3g/transistor-npn-40v-0-225w-sot/dp/2627984RL)
---

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