# Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 250 mW, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:4535538RL/)

**URL**: https://novapart.co/products/MMBT2222A/bipolar-bjt-single-transistor-npn-40-v-600-ma-250
**SKU**: MMBT2222A
**Manufacturer**: MULTICOMP PRO
**Price**: €0.0230
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| No. Of Pins | 3Pins |
| Product Range | Multicomp Pro Single Bipolar Transistors NPN |
| Qualification | - |
| Power Dissipation | 250mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 300MHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 100hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 600mA |
| Collector Emitter Voltage Max | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4535538RL/)

## **Single Bipolar Transistor** 

## **Features** 

- Epitaxial planar die construction. 

## **Absolute Maximum Ratings** Ta = 25°C 

|**Absolute Maximum Ratings**Ta = 25°C||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Rating**|**Unit**|
|Collector - Base Voltage|VCBO|75|V|
|Collector-Emitter Voltage|VCEO|40||
|Emitter - Base Voltage|VEBO|6||
|Collector Current - Continuous|IC|600|mA|
|Power Dissipation|PD|250|mW|
|Thermal resistance fromjunction to ambient|RθJA|417|°C/W|
|Junction Temperature|TJ|150|°C|
|Operatingand storage temperature range|Tstg|-55 to +150||



## **Electrical Characteristics** (Ta = 25°C 

|**Parameter**<br>~~QO~~<br>~~———~~|**Symbol**<br>~~QO~~<br>~~oe~~|**Test Conditions**<br>~~QO~~<br>~~oo~~|**Min**<br>~~QO~~<br>~~GN~~<br>~~oo~~|**Typ**<br>~~QO~~<br>~~oo~~|**Max**<br>~~QO~~|**Unit**<br>~~QO~~|
|---|---|---|---|---|---|---|
|Collector-Base Breakdown Voltage<br>~~es~~<br>~~———~~|V(BR)CBO<br>~~es~~<br>~~oe~~|IC= 100μA, IE= 0<br>~~es~~<br>~~oo~~|75<br>~~GN~~<br>~~es~~<br>~~oo~~|~~es~~<br>~~oo~~|~~es~~|V|
|Collector-Emitter Breakdown Voltage<br>~~———~~|V(BR)CEO<br>~~oe~~|IC= 10 mA, IB= 0<br>~~oo~~|40<br>~~oo~~|~~oo~~|||
|Emitter-Base Breakdown Voltage<br>~~———~~<br>~~es~~<br>~~**e**e~~|V(BR)EBO<br>~~oe~~<br>~~es~~<br>~~e~~|IE= 100μA, IC= 0<br>~~oo~~<br>~~es~~<br>~~en~~|6<br>~~oo~~<br>~~es~~<br>~~oo~~|~~oo~~<br>~~es~~<br>~~oo~~|~~es~~||
|Collector cutoff current<br>~~———~~<br>~~I~~<br>~~**e**e~~|ICBO<br>~~oe~~<br>~~I~~<br>~~e~~|VCB=60V, IE=0<br>~~oo~~<br>~~I~~<br>~~en~~|~~oo ~~<br>~~I~~<br>~~oo~~|~~oo~~<br>~~I~~<br>~~oo~~|100<br>~~I~~|nA<br>~~re~~|
|Collector cutoff current<br>~~**e**e~~|ICEX<br>~~e~~|VCE=30V, VEB(off)=-3V<br>~~en~~|~~oo~~|~~oo~~|10||
|Emitter cut-off current<br>~~**e**e~~<br>~~Bf~~|IEBO<br>~~e~~<br>~~Bf~~|VEB=3V, IC=0<br>~~en~~<br>~~s~~<br>~~re~~|~~oo~~<br>~~s~~<br>~~re~~|~~oo~~<br>~~s~~<br>~~re~~|100<br>~~s~~<br>~~re~~||
|DC current gain<br>~~**e**e~~<br>~~Bf~~<br>~~Po~~|hFE<br>~~e~~<br>~~Bf~~|VCE=10V, IC= 0.1mA<br>~~en ~~<br>~~re~~|40<br> ~~oo~~<br>~~re~~<br>~~ee~~|~~oo~~<br>~~re~~<br>~~ee~~|~~re~~|~~re~~|
|||VCE=10V, IC= 150mA<br>~~re~~<br>~~ee~~|100<br>~~re~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|~~re~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|300<br>~~re~~<br>~~ee~~<br>~~ee~~|~~re~~<br>~~ee~~|
|||VCE=10V, IC= 500mA<br>~~re~~<br>~~ee~~|42<br>~~re~~<br>~~ee ~~<br>~~ee~~<br>~~ee~~|~~re~~<br> ~~ee~~<br>~~ee~~<br>~~ee~~|~~re~~<br>~~ee~~<br>~~ee~~|~~re~~<br>~~ee~~|
|Collector-emitter saturation voltage<br>~~Bf~~<br>~~Po~~<br>~~——————~~|VCE(sat)<br>~~Bf~~|IC=150 mA, IB=15mA<br>~~re~~|~~re~~<br>~~ee~~<br>~~ee~~|~~re~~<br>~~ee~~<br>~~ee~~|0.3<br>~~re~~<br>~~ee~~|V<br>~~re~~|
|||IC=500 mA, IB=50mA<br>~~ee~~|~~ee~~<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~<br>~~ee~~|1<br>~~ee~~<br>~~ee~~||
|Base-emitter saturation voltage<br>~~Po~~<br>~~——————~~|VBE(sat)|IC= 150 mA; IB= 15 mA<br>~~ee~~|0.6<br>~~ee ~~<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~<br>~~ee~~|1.2<br>~~ee~~<br>~~ee~~||
|||IC= 500 mA; IB= 50 mA<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~<br>~~ee~~<br>~~GO~~|~~ee~~<br>~~ee~~<br>~~ee~~|2<br>~~ee~~<br>~~ee~~||
|Transition frequency<br>~~——————~~<br>~~Qe~~|fT<br>~~Qe~~|IC= 20 mA; VCE= 20 V; f = 100 MHz<br>~~Qe~~|300<br>~~ee ~~<br>~~Qe~~<br>~~GO~~|~~ee~~<br>~~Qe~~|~~Qe~~|MHz<br>~~Qe~~|
|Delaytime<br>~~ee~~|td|VCC=30V, VBE(off)=-0.5V,<br>IC=150mA , IB1= 15mA<br>~~|~~<br>~~a~~<br>~~|~~|~~GO~~<br>~~|~~<br>~~|~~||10|ns|
|Rise time<br>~~ee~~<br>~~e~~|tr<br>~~ee~~||~~|~~<br>~~|~~<br>~~||~~||25||
|Storage time<br>~~ee~~<br>~~**e**~~<br>~~e~~|ts<br>~~**e**~~<br>~~ee~~|VCC=30V, IC=150mA,IB1=-IB2=15mA<br>~~|~~<br>~~**e**e~~<br>~~a~~<br>~~|~~|~~|~~<br>~~|~~<br>~~e~~<br>~~||~~|~~e~~|225<br>~~e~~||
|Fall time<br>~~**e**~~<br>~~e~~|tf<br>~~**e**~~<br>~~ee~~||~~e~~<br>~~||~~|~~e~~|60<br>~~e~~||



Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro 

Page <1> 20/08/24 V1.0 

## **Single Bipolar Transistor** 

## **Typical Characterisitics** 

**==> picture [315 x 339] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC, Collector Current (mA)<br>TA, Ambient Temperature (°C) Fig 2, Typical DC Current Gain vs<br>Fig 1, Max Power Dissipation vs Ambi- Collector Current<br>ent temperature<br>Reverse Volts (V)<br>Fig. Typical Capacitance<br>, DC Current Gain<br>FE<br>h<br>, Power Dissipation (m/W)<br>D<br>P<br>Capacitance (pF)<br>**----- End of picture text -----**<br>


**==> picture [148 x 156] intentionally omitted <==**

**----- Start of picture text -----**<br>
IB, Base Current (mA)<br>Fig. 4 Typical Collector Saturation Region<br> Collector Emitter Voltage (V)<br>CE<br>V<br>**----- End of picture text -----**<br>


## **Diagram** 

**==> picture [127 x 105] intentionally omitted <==**

## **Part Number Table** 

## Dimensions : Millimetres 

|**Part Number Table**||
|---|---|
|**Description**|**Part Number**|
|Single Bipolar Transistor, NPN, 0.6A, 40V, SOT 2|3<br>MMBT2222A|



**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. 

Newark.com/multicomp-pro 

Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro 

20/08/24 V1.0 

Page <2> 



## Links

- [View this product on Novapart](https://novapart.co/products/MMBT2222A/bipolar-bjt-single-transistor-npn-40-v-600-ma-250)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/multicomp-pro/mmbt2222a/transistor-npn-40v-0-6a-sot-23/dp/4535538RL)
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