# Small Signal Diode, Single, 75 V, 215 mA, 1.25 V, 4 ns, 4 A

![Product image](https://novapart.co/image/farnell:2439330/)

**URL**: https://novapart.co/products/MMBD4148,215/small-signal-diode-single-75-v-215-ma-125-4-ns-a
**SKU**: MMBD4148,215
**Manufacturer**: NEXPERIA
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Small Signal Diodes
**Price**: €0.0320
**Stock**: 1000+
**Lead Time**: 373 days (indicative)

## Description

Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:75V; Forward Current If(AV):215mA; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:4ns; Forward Surge

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | MMBD4 |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | TO-236AB |
| Diode Configuration | Single |
| Forward Voltage Max | 1.25V |
| Forward Surge Current | 4A |
| Reverse Recovery Time | 4ns |
| Average Forward Current | 215mA |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2439330/)

**==> picture [49 x 49] intentionally omitted <==**

## **MMBD4148** 

## **High-speed switching diode** 

**Rev. 01 — 4 June 2009** 

## **Product data sheet** 

## **1.** 

## **1.1 General description** 

High-speed switching diode, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 

## **1.2 Features** 

- I High switching speed: trr ≤ 4 ns 

- I Low leakage current 

- I Repetitive peak reverse voltage: VRRM ≤ 75 V 

- I Low capacitance 

- I Reverse voltage: VR ≤ 75 V 

- I Small SMD plastic package 

## **1.3 Applications** 

- I High-speed switching 

- I General-purpose switching 

## **1.4 Quick reference data** 

## **Table 1. Quick reference data** 

|**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|VR|reverse voltage|||-|-|75|V|
|IR|reverse current|VR= 75 V||-|-|0.5|µA|
|trr|reverse recovery time||[1]|-|-|4|ns|



- [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. 

## **2. Pinning information** 

|**Table**|**2.**|**Pinning**||||||||
|---|---|---|---|---|---|---|---|---|---|
|**Pin**||**Description**|**Simplifed outline**|||**Graphic symbol**||||
|1||anode||||||||
|2||not connected||3||||3||
|3||cathode||||1|||2|
||||1<br>2|||||006aaa764||



**==> picture [211 x 101] intentionally omitted <==**

**MMBD4148** 

**NXP Semiconductors** 

**High-speed switching diode** 

## **3. Ordering information** 

## **Table 3. Ordering information** 

|**Type number**|**Package**|**Package**|**Package**|
|---|---|---|---|
||**Name**|**Description**|**Version**|
|MMBD4148|-<br>plastic surface-mounted package; 3 leads<br>SOT23|||



## **4. Marking** 

## **Table 4. Marking codes** 

|**Type number**|**Marking**|**cod**~~**e**~~<br>**[1]**|
|---|---|---|
|MMBD4148|A6*||



- [1] * = -: made in Hong Kong 

   - = p: made in Hong Kong 

   - = t: made in Malaysia 

   - = W: made in China 

## **5. Limiting values** 

## **Table 5. Limiting values** 

In accordance with the Absolute Maximum Rating System (IEC 60134). 

|**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Max**<br>**Unit**|
|---|---|
|VRRM<br>repetitive peak reverse<br>voltage|-<br>75<br>V|
|VR<br>reverse voltage|-<br>75<br>V|
|IF<br>forward current|[1] -<br>215<br>mA|
|IFRM<br>repetitive peak forward<br>current|tp≤0.5µs;<br>δ ≤0.25<br>-<br>500<br>mA|
|IFSM<br>non-repetitive peak forward<br>current|square wave<br>[2]|
||tp= 1µs<br>-<br>4<br>A|
||tp= 1 ms<br>-<br>1<br>A|
||tp= 1 s<br>-<br>0.5<br>A|
|Ptot<br>total power dissipation|Tamb≤25°C<br>[1] -<br>250<br>mW|
|Tj<br>junction temperature|-<br>150<br>°C|
|Tamb<br>ambient temperature|−65<br>+150<br>°C|
|Tstg<br>storage temperature|−65<br>+150<br>°C|



[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 

- [2] Tj = 25 °C prior to surge. 

© NXP B.V. 2009. All rights reserved. 

MMBD4148_1 **Product data sheet** 

**Rev. 01 — 4 June 2009** 

**2 of 10** 

**MMBD4148** 

**NXP Semiconductors** 

**High-speed switching diode** 

## **6. Thermal characteristics** 

## **Table 6. Thermal characteristics** 

|**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|Rth(j-a)|thermal resistance from|in free air|[1]|-|-|500|K/W|
||junction to ambient|||||||
|Rth(j-t)|thermal resistance from|||-|-|330|K/W|
||junction to tie-point|||||||



[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 

## **7. Characteristics** 

## **Table 7. Characteristics** 

## Tamb = 25 ° 

|**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**|
|---|---|
|VF<br>forward voltage|[1]|
||IF= 1 mA<br>-<br>-<br>715<br>mV|
||IF= 10 mA<br>-<br>-<br>855<br>mV|
||IF= 50 mA<br>-<br>-<br>1<br>V|
||IF= 150 mA<br>-<br>-<br>1.25<br>V|
|IR<br>reverse current|VR= 25 V<br>-<br>-<br>30<br>nA|
||VR= 75 V<br>-<br>-<br>0.5<br>µA|
||VR= 25 V; Tj= 150°C<br>-<br>-<br>30<br>µA|
||VR= 75 V; Tj= 150°C<br>-<br>-<br>50<br>µA|
|Cd<br>diode capacitance|f = 1 MHz; VR= 0 V<br>-<br>-<br>1.5<br>pF|
|trr<br>reverse recovery time|[2] -<br>-<br>4<br>ns|
|VFR<br>forward recovery voltage|[3] -<br>-<br>1.75<br>V|



[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 

[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. 

- [3] When switched from IF = 10 mA; tr = 20 ns. 

© NXP B.V. 2009. All rights reserved. 

MMBD4148_1 **Product data sheet** 

**Rev. 01 — 4 June 2009** 

**3 of 10** 

**MMBD4148** 

**NXP Semiconductors** 

**High-speed switching diode** 

**==> picture [497 x 584] intentionally omitted <==**

**----- Start of picture text -----**<br>
006aab132 mbg704<br>10 [3] 10 [2]<br>IF<br>(mA) IFSM<br>(A)<br>10 [2]<br>10<br>10<br>1<br>(1) (2) (3) (4)<br>1<br>10 [−][1] 10 [−][1]<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 10 [2] 10 [3] 10 [4]<br>VF (V) tp (µs)<br>(1) Tamb = 150 °C Based on square wave currents.<br>(2) Tamb = 85 °C Tj = 25 °C; prior to surge<br>(3) Tamb = 25 °C<br>(4) Tamb = −40 °C<br>Fig 1. Forward current as a function of forward Fig 2. Non-repetitive peak forward current as a<br>voltage; typical values function of pulse duration; maximum values<br>006aab133 mbg446<br>10 [2] 0.8<br>(µIRA) (1) Cd<br>10 (pF)<br>0.6<br>1 (2)<br>10 [−][1]<br>0.4<br>(3)<br>10 [−][2]<br>10 [−][3]<br>0.2<br>10 [−][4] (4)<br>10 [−][5] 0<br>0 20 40 60 80 100 0 4 8 12 16<br>VR (V) VR (V)<br>(1) Tamb = 150 °C f = 1 MHz; Tamb = 25 °C<br>(2) Tamb = 85 °C<br>(3) Tamb = 25 °C<br>(4) Tamb = −40 °C<br>Fig 3. Reverse current as a function of reverse Fig 4. Diode capacitance as a function of reverse<br>voltage; typical values voltage; typical values<br>**----- End of picture text -----**<br>


© NXP B.V. 2009. All rights reserved. 

MMBD4148_1 **Product data sheet** 

**Rev. 01 — 4 June 2009** 

**4 of 10** 

**MMBD4148** 

**NXP Semiconductors** 

**High-speed switching diode** 

## **8. Test information** 

**==> picture [497 x 296] intentionally omitted <==**

**----- Start of picture text -----**<br>
tr tp<br>t<br>D.U.T.<br>10 %<br>RS = 50 Ω IF SAMPLING + IF trr t<br>OSCILLOSCOPE<br>V = VR + IF × RS Ri  = 50 Ω<br>90 % (1)<br>VR<br>mga881<br>input signal output signal<br>(1) IR = 1 mA<br>Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05<br>Oscilloscope: rise time tr = 0.35 ns<br>Fig 5. Reverse recovery time test circuit and waveforms<br>I 1 kΩ 450 Ω<br>I V<br>90 %<br>RS   = 50 Ω D.U.T. OSCILLOSCOPE VFR<br>Ri  = 50 Ω<br>10 %<br>t t<br>tr tp<br>input  signal output  signal<br>mga882<br>**----- End of picture text -----**<br>


Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ ≤ 0.005 

**Fig 6. Forward recovery voltage test circuit and waveforms** 

© NXP B.V. 2009. All rights reserved. 

MMBD4148_1 

**Product data sheet** 

**Rev. 01 — 4 June 2009** 

**5 of 10** 

**MMBD4148** 

**NXP Semiconductors** 

**High-speed switching diode** 

## **9. Package outline** 

**==> picture [237 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.0 1.1<br>2.8 0.9<br>3<br>0.45<br>0.15<br>2.5 1.4<br>2.1 1.2<br>1 2<br>0.48 0.15<br>0.38 0.09<br>1.9<br>Dimensions in mm 04-11-04<br>**----- End of picture text -----**<br>


**Fig 7. Package outline MMBD4148 (SOT23/TO-236AB)** 

## **10. Packing information** 

**Table 8. Packing methods** The indicated -xxx are the last three digits of the 12NC ordering code ~~.~~ [1] 

|**Type number**<br>**Package**<br>**Description**|**Packing quantity**|**Packing quantity**|
|---|---|---|
||**3000**|**10000**|
|MMBD4148<br>SOT23<br>4 mm pitch, 8 mm tape and reel|-215<br>-235||



[1] For further information and the availability of packing methods, see Section 14. 

© NXP B.V. 2009. All rights reserved. 

MMBD4148_1 **Product data sheet** 

**Rev. 01 — 4 June 2009** 

**6 of 10** 

**MMBD4148** 

**NXP Semiconductors** 

**High-speed switching diode** 

## **11. Soldering** 

**==> picture [397 x 547] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.3<br>2.9<br>1.9<br>solder lands<br>solder resist<br>3 1.7 2<br>solder paste<br>0.7 0.6 occupied area<br>(3×) (3×)<br>Dimensions in mm<br>0.5<br>(3×)<br>0.6<br>(3×)<br>1 sot023_fr<br>Fig 8. Reflow soldering footprint MMBD4148 (SOT23/TO-236AB)<br>2.2<br>1.2<br>(2×)<br>1.4<br>(2×)<br>solder lands<br>4.6 2.6 solder resist<br>occupied area<br>Dimensions in mm<br>1.4<br>preferred transport direction during soldering<br>2.8<br>4.5 sot023_fw<br>Fig 9. Wave soldering footprint MMBD4148 (SOT23/TO-236AB)<br>**----- End of picture text -----**<br>


© NXP B.V. 2009. All rights reserved. 

MMBD4148_1 **Product data sheet** 

**Rev. 01 — 4 June 2009** 

**7 of 10** 

**MMBD4148** 

**NXP Semiconductors** 

**High-speed switching diode** 

## **12. Revision history** 

|**Table 9.**|**Revision**|**history**||||
|---|---|---|---|---|---|
|**Document**|**ID**|**Release date**|**Data sheet status**|**Change notice**|**Supersedes**|
|MMBD4148_1||20090604|Product data sheet|-|-|



© NXP B.V. 2009. All rights reserved. 

MMBD4148_1 

**Product data sheet** 

**Rev. 01 — 4 June 2009** 

**8 of 10** 

**MMBD4148** 

**NXP Semiconductors** 

**High-speed switching diode** 

## **13. Legal information** 

## **13.1 Data sheet status** 

|**Document statu**|**s**<br>**[1]**<br>**[2]**<br>**Product status**<br>**[3]**<br>**Defnition**|
|---|---|
|Objective [short] data sheet<br>Development<br>This document contains data from the objective specifcation for product development.||
|Preliminary [short] data sheet<br>Qualifcation<br>This document contains data from the preliminary specifcation.||
|Product [short] data sheet<br>Production<br>This document contains the product specifcation.||



[1] Please consult the most recently issued document before initiating or completing a design. 

[2] 

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 

## **13.2** 

**Draft —** The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 

**Short data sheet —** A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 

## **13.3 Disclaimers** 

**General —** Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 

**Right to make changes —** NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 

**Suitability for use —** NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 

damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. 

**Applications —** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 

**Limiting values —** the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 

**Terms and conditions of sale —** NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. 

**No offer to sell or license —** Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 

**Export control —** This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 

**Quick reference data —** The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 

## **13.4 Trademarks** 

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 

## **14. Contact information** 

For more information, please visit: **http://www.nxp.com** 

**salesaddresses@nxp.com** 

© NXP B.V. 2009. All rights reserved. 

MMBD4148_1 **Product data sheet** 

**Rev. 01 — 4 June 2009** 

**9 of 10** 

**MMBD4148** 

**NXP Semiconductors** 

**High-speed switching diode** 

## **15. Contents** 

|**1**|**Product profle . . . . . . . . . . . . . . . . . . . . . . . . . .  1**|
|---|---|
|1.1|General description. . . . . . . . . . . . . . . . . . . . . . 1|
|1.2|Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
|1.3|Applications  . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
|1.4|Quick reference data. . . . . . . . . . . . . . . . . . . . . 1|
|**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . .  1**|
|**3**|**Ordering information . . . . . . . . . . . . . . . . . . . . .  2**|
|**4**|**Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  2**|
|**5**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .  2**|
|**6**|**Thermal characteristics. . . . . . . . . . . . . . . . . . .  3**|
|**7**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . .  3**|
|**8**|**Test information. . . . . . . . . . . . . . . . . . . . . . . . .  5**|
|**9**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . .  6**|
|**10**|**Packing information. . . . . . . . . . . . . . . . . . . . . .  6**|
|**11**|**Soldering  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  7**|
|**12**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . .  8**|
|**13**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . .  9**|
|13.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9|
|13.2|Defnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
|13.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
|13.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
|**14**|**Contact information. . . . . . . . . . . . . . . . . . . . . .  9**|
|**15**|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  10**|



**==> picture [151 x 121] intentionally omitted <==**

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 

**© NXP B.V. 2009.** 

**All rights reserved.** 

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com **Date of release: 4 June 2009 Document identifier: MMBD4148_1** 



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- [Supplier page](https://es.farnell.com/nexperia/mmbd4148-215/diode-high-speed-switching-sot23/dp/2439330)
---

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