# Zener Single Diode, 8.2 V, 300 mW, SOD-323, 2 Pins, 150 °C, Surface Mount

![Product image](https://novapart.co/image/farnell:2372982RL/)

**URL**: https://novapart.co/products/MM3Z8V2ST1G/zener-single-diode-82-v-300-mw-sod-323-2-pins-150
**SKU**: MM3Z8V2ST1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Zener Single Diodes
**Price**: €0.0250
**Stock**: 10+
**Lead Time**: 97 days (indicative)

## Description

Zener Voltage Vz Typ:8.36V; Power Dissipation Pd:300mW; Diode Case Style:SOD-323; Zener Tolerance ±:5%; No. of Pins:2Pins; Operating Temperature Max:150°C; Product Range:MM3Z8 Series

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2Pins |
| Product Range | MM3Z8 |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | SOD-323 |
| Power Dissipation | 300mW |
| Zener Voltage Nom | 8.2V |
| Operating Temperature Max | 150°C |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2372982RL/)

**DATA SHEET www.onsemi.com** 

## Zener Voltage Regulators 

## **300 mW SOD−323 Surface Mount Tight Tolerance Portfolio** 

## MM3ZxxxST1G Series, SZMM3ZxxxST1G Series 

**==> picture [34 x 31] intentionally omitted <==**

## **SOD−323 CASE 477 STYLE 1** 

**==> picture [105 x 16] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 2<br>Cathode Anode<br>**----- End of picture text -----**<br>


This series of Zener diodes is packaged in a SOD−323 surface mount package that has a power dissipation of 300 mW. They are designed to provide voltage regulation protection and are especially attractive in situations where space is at a premium. They are well suited for applications such as cellular phones, hand−held portables, and high density PC boards. 

## **MARKING DIAGRAM** 

**==> picture [22 x 15] intentionally omitted <==**

**----- Start of picture text -----**<br>
XXM �<br>�<br>**----- End of picture text -----**<br>


## **Specification Features** 

- Standard Zener Breakdown Voltage Range − 3.3 V to 36 V 

- Steady State Power Rating of 300 mW 

- Small Body Outline Dimensions: 

   - 0.067″ x 0.049″ (1.7 mm x 1.25 mm) 

- Low Body Height: 0.035″ (0.9 mm) 

- Package Weight: 4.507 mg/unit 

- ESD Rating of Class 3 (> 16 kV) per Human Body Model 

XX = Specific Device Code M = Date Code* � = Pb−Free Package 

(Note: Microdot may be in either location) 

*Date Code orientation may vary depending upon manufacturing location. 

- Tight Tolerance VZ 

- SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* 

## **Mechanical Characteristics:** 

> **CASE:** Void-free, transfer-molded plastic **FINISH:** All external surfaces are corrosion resistant 

## **MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:** 

260°C for 10 Seconds 

**LEADS:** Plated with Pb−Sn or Sn only (Pb−Free) **POLARITY:** Cathode indicated by polarity band **FLAMMABILITY RATING:** UL 94 V−0 

**MOUNTING POSITION:** Any 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|MM3ZxxxST1G|SOD−323<br>(Pb−Free)|3,000 /<br>Tape & Reel|
|SZMM3ZxxxST1G|SOD−323<br>(Pb−Free)|3,000 /<br>Tape & Reel|
|MM3ZxxxST3G|SOD−323<br>(Pb−Free)|10,000 /<br>Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

## **DEVICE MARKING INFORMATION** 

See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet. 

Publication Order Number: **MM3Z2V4ST1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2015 **August, 2021 − Rev. 25** 

**MM3ZxxxST1G Series, SZMM3ZxxxST1G Series** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Max**|**Unit**|
|Total Device Dissipation FR−4 Board,<br>(Note 1) @ TA= 25°C<br>Derate above 25°C|PD|300<br>2.4|mW<br>mW/°C|
|Thermal Resistance from Junction−to−Ambient|R�JA|416|°C/W|
|Junction and Storage Temperature Range|TJ, Tstg|−65 to +150|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. FR−4 printed circuit board, single−sided copper, mounting pad 1 cm[2] . 

## **ELECTRICAL CHARACTERISTICS** 

(TA = 25 ° C unless otherwise noted, 

VF = 0.9 V Max. @ IF = 10 mA for all types) 

|**Symbol**|**Parameter**||||||
|---|---|---|---|---|---|---|
|||||VZ||**Zener Voltage Regulator**<br>IF<br>**V**<br>**I**<br>IR<br>IZT<br>VR<br>VF|
|VZ|Reverse Zener Voltage @ IZT||||||
|IZT|Reverse Current||||||
|ZZT|Maximum Zener Impedance @ IZT||||||
|IZK|Reverse Current||||||
|ZZK|Maximum Zener Impedance @ IZK||||||
|IR|Reverse Leakage Current @ VR||||||
|VR|Reverse Voltage||||||
|IF|Forward Current||||||
|VF|Forward Voltage @ IF||||||
|�VZ|Maximum Temperature Coefficient of VZ||||||
|C|Max. Capacitance @VR= 0 and f = 1 MHz||||||



**www.onsemi.com** 

**2** 

## **MM3ZxxxST1G Series, SZMM3ZxxxST1G Series** 

**ELECTRICAL CHARACTERISTICS** (VF = 0.9 Max @ IF = 10 mA for all types) 

|**Device***|**Device**<br>**Marking**|**Test**<br>**Current**<br>**Izt mA**|**Zener Voltage VZ**|**Zener Voltage VZ**|**ZZK IZ**<br>**=  0.5**<br>**mA�**<br>**Max**|**ZZT**<br>**IZ = IZT**<br>**@ 10%**<br>**Mod�**<br>**Max**|**Max**<br>**IR @ VR**|**Max**<br>**IR @ VR**|**dVZ/dt**<br>**@ IZT1**|**(mV/k)**<br>**= 5 mA**|**C pF Max @**<br>**VR = 0**<br>**f = 1 MHz**|
|---|---|---|---|---|---|---|---|---|---|---|---|
||||**Min**|**Max**|||**�A**|**V**|**Min**|**Max**||
|MM3Z2V4ST1G|T2|5.0|2.29|2.51|1000|100|50|1.0|−3.5|0|450|
|MM3Z2V7ST1G|T3|5.0|2.59|2.81|1000|100|20|1.0|−3.5|0|450|
|MM3Z3V0ST1G|T4|5.0|2.90|3.11|1000|100|10|1.0|−3.5|0|450|
|MM3Z3V3ST1G|T5|5.0|3.32|3.53|1000|95|5.0|1.0|−3.5|0|450|
|MM3Z3V6ST1G|T6|5.0|3.49|3.71|1000|90|5.0|1.0|−3.5|0|450|
|MM3Z3V9ST1G|T7|5.0|3.89|4.16|1000|90|3.0|1.0|−3.5|−2.5|450|
|MM3Z4V3ST1G|T8|5.0|4.17|4.43|1000|90|3.0|1.0|−3.5|0|450|
|MM3Z4V7ST1G|T9|5.0|4.55|4.75|800|80|3.0|2.0|−3.5|0.2|260|
|MM3Z5V1ST1G|TA|5.0|4.98|5.2|500|60|2.0|2.0|−2.7|1.2|225|
|MM3Z5V6ST1G|TC|5.0|5.49|5.73|200|40|1.0|2.0|−2.0|2.5|200|
|MM3Z6V2ST1G|TE|5.0|6.06|6.33|100|10|3.0|4.0|0.4|3.7|185|
|MM3Z6V8ST1G|TF|5.0|6.65|6.93|160|15|2.0|4.0|1.2|4.5|155|
|MM3Z7V5ST1G|TG|5.0|7.28|7.6|160|15|1.0|5.0|2.5|5.3|140|
|MM3Z8V2ST1G|TH|5.0|8.02|8.36|160|15|0.7|5.0|3.2|6.2|135|
|MM3Z9V1ST1G|TK|5.0|8.85|9.23|160|15|0.5|6.0|3.8|7.0|130|
|MM3Z10VST1G|WB|5.0|9.80|10.20|160|15|0.5|6.0|4.5|8.0|130|
|MM3Z11VST1G|WC|5.0|10.78|11.22|160|20|0.1|8.0|5.4|9.0|130|
|MM3Z12VST1G|TN|5.0|11.74|12.24|80|25|0.1|8.0|6.0|10|130|
|MM3Z13VST1G|TQ|5.0|12.91|13.49|160|30|0.1|8.0|7.0|11|120|
|MM3Z15VST1G|TP|5.0|14.34|14.98|80|40|0.1|11|8.8|12.7|130|
|MM3Z16VST1G|TU|5.0|15.85|16.51|80|40|0.05|11.2|10.4|14|105|
|MM3Z18VST1G|TW|5.0|17.56|18.35|80|45|0.05|12.6|12.4|16|100|
|MM3Z20VST1G|U8|5.0|19.48|20.46|100|55|0.05|14.0|14.4|18|85|
|MM3Z22VST1G|WP|5.0|21.54|22.47|100|55|0.05|15.4|16.4|20|85|
|MM3Z24VST1G|WT|5.0|23.72|24.78|120|70|0.05|16.8|18.4|22|80|
|MM3Z27VST1G|WQ|5.0|26.19|27.53|300|80|0.05|18.9|21.4|25.3|70|
|MM3Z30VST1G|WV|5.0|29.19|30.69|300|80|0.05|21.0|24.4|29.4|70|
|MM3Z33VST1G|WR|5.0|32.15|33.79|300|80|0.05|23.2|27.4|33.4|70|
|MM3Z36VST1G|WU|5.0|35.07|36.87|500|90|0.05|25.2|30.4|37.4|70|
|MM3Z39VST1G|WN|2.0|38.22|39.78|500|130|0.05|27.3|33.4|41.2|45|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Include SZ-prefix devices where applicable. 

**www.onsemi.com** 

**3** 

**MM3ZxxxST1G Series, SZMM3ZxxxST1G Series** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
1000 1000<br>TJ = 25 ° C<br>IZ(AC) = 0.1 IZ(DC)<br>f = 1 kHz<br>100 100<br>I Z  = 1 mA 150 ° C<br>10 10<br>5 mA<br>75 ° C 25 ° C 0 ° C<br>1.0 1.0<br>3.0 10 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>VZ, NOMINAL ZENER VOLTAGE VF, FORWARD VOLTAGE (V)<br>Figure 1. Effect of Zener Voltage on Figure 2. Typical Forward Voltage<br>Zener Impedance<br>1000 1000<br>TA = 25 ° C<br>100<br>1 V BIAS<br>0 V BIAS<br>10<br>100<br>1.0<br>BIAS AT<br>50% OF V Z  NOM 0.1 +150 ° C<br>0.01<br>10<br>+25 ° C<br>0.001<br>0.0001 −55 ° C<br>1.0 0.00001<br>4.0 10 0 5.0 10<br>VZ, NOMINAL ZENER VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE (V)<br>Figure 3. Typical Capacitance Figure 4. Typical Leakage Current<br>100 100<br>TA = 25 ° C<br>80<br>10<br>60<br>1.0<br>40<br>0.1<br>20<br>0.01 0<br>0 2.0 4.0 6.0 8.0 10 0 25 50 75 100 125 150<br>VZ, ZENER VOLTAGE (V) TEMPERATURE ( ° C)<br>) Ω IF, FORWARD CURRENT (mA)<br>ZZT, DYNAMIC IMPEDANCE (<br>A)<br>μ<br>C, CAPACITANCE (pF)<br>IR, LEAKAGE CURRENT (<br>POWER DISSIPATION (%)<br>IZ, ZENER CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 5. Zener Voltage versus Zener Current (VZ Up to 9 V)** 

**Figure 6. Steady State Power Derating** 

**www.onsemi.com** 

**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

DATE 13 MAR 2007 

**SOD−323** CASE 477−02 ISSUE H 

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**----- Start of picture text -----**<br>
a 2 2<br>1 1<br>STYLE 1 STYLE 2<br>SCALE 4:1<br>HE<br>D<br>=<br>b 1 2 E<br>=<br>A3<br>A<br>C if NOTE 5L A1 C o,<br>NOTE 3<br>**----- End of picture text -----**<br>


**==> picture [141 x 108] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOLDERING FOOTPRINT*<br>0.63<br>0.025<br>se<br>0.83<br>0.033<br>1.60<br>Ua<br>0.063<br>2.85<br>0.112<br>**----- End of picture text -----**<br>


- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

NOTES: 

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 

2. CONTROLLING DIMENSION: MILLIMETERS. 

3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 

4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 

5. DIMENSION L IS MEASURED FROM END OF RADIUS. 

**==> picture [145 x 92] intentionally omitted <==**

**----- Start of picture text -----**<br>
MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 0.80 0.90 1.00 0.031 0.035 0.040<br>A1 0.00 0.05 0.10 0.000 0.002 0.004<br>A3 0.15 REF 0.006 REF<br>b 0.25 0.32 0.4 0.010 0.012 0.016<br>C 0.089 0.12 0.177 0.003 0.005 0.007<br>D 1.60 1.70 1.80 0.062 0.066 0.070<br>E 1.15 1.25 1.35 0.045 0.049 0.053<br>L 0.08 0.003<br>HE 2.30 2.50 2.70 0.090 0.098 0.105<br>Pt —— —*| 4 ]<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
GENERIC<br>MARKING DIAGRAM*<br>**----- End of picture text -----**<br>


**==> picture [161 x 77] intentionally omitted <==**

**----- Start of picture text -----**<br>
XX M XX M<br>qf p 2:<br>STYLE 1 STYLE 2<br>XX = Specific Device Code<br>M = Date Code<br>**----- End of picture text -----**<br>


- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. 

STYLE 1: STYLE 2: PIN 1. CATHODE (POLARITY BAND) NO POLARITY 2. ANODE 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB17533C** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SOD−323 PAGE 1 OF 1** ~~ee~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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◊ 

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