# Bipolar (BJT) Single Transistor, PNP, 80 V, 10 A, 36 W, TO-220, Through Hole ![Product image](https://novapart.co/image/farnell:2535643/) **URL**: https://novapart.co/products/MJF45H11G/bipolar-bjt-single-transistor-pnp-80-v-10-a-36-w **SKU**: MJF45H11G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.8080 **Stock**: 100+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:40MHz; Power Dissipation Pd:36W; DC Collector Current:-10A; DC Current Gain hFE:40hFE; Tran ## Specifications | Parameter | Value | |---|---| | Msl | - | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | MJxxxx | | Qualification | - | | Power Dissipation | 36W | | Transistor Mounting | Through Hole | | Transistor Polarity | PNP | | Transition Frequency | 40MHz | | Transistor Case Style | TO-220 | | Dc Current Gain Hfe Min | 40hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 10A | | Collector Emitter Voltage Max | 80V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2535643/) ## MJF44H11 (NPN), MJF45H11 (PNP) ## **Preferred Devices** ## Complementary Power Transistors ## **For Isolated Package Applications** **http://onsemi.com** Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. **SILICON POWER TRANSISTORS 10 AMPERES 80 VOLTS, 36 WATTS** ## **Features** - Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ 8.0 A - Fast Switching Speeds - Complementary Pairs Simplifies Designs - Pb−Free Packages are Available* **MAXIMUM RATINGS Rating Symbol Value Unit** Collector−Emitter Voltage VCEO 80 Vdc Emitter−Base Voltage VEB 5 Vdc Collector Current − Continuous IC 10 Adc − Peak 20 Total Power Dissipation PD @ TC = 25 ° C 36 W Derate above 25 ° C 0.288 W/ ° C Total Power Dissipation PD @ TA = 25 ° C 2.0 W Derate above 25 ° C 0.016 W/ ° C Operating and Storage Junction TJ, Tstg −55 to 150 ° C Temperature Range **THERMAL CHARACTERISTICS** ~~=i~~ **Characteristic Symbol Max Unit** Thermal Resistance, Junction−to−Case R JC 3.5 ° C/W Thermal Resistance, Junction−to−Ambient R JA 62.5 ° C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. > *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **==> picture [123 x 99] intentionally omitted <==** **----- Start of picture text -----**
ISOLATED TO−220
CASE 221D
1 STYLE 2
é 2
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3 **MARKING DIAGRAM** F4xH11G AYWW - F4xH11 = Specific Device Code ~~5~~ x = 4 or 5 G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**| |---|---|---| |MJF44H11|TO−220 FULLPACK|50 Units/Rail| |MJF44H11G|TO−220 FULLPACK
(Pb−Free)|50 Units/Rail| |MJF45H11|TO−220 FULLPACK|50 Units/Rail| |MJF45H11G|TO−220 FULLPACK
(Pb−Free)|50 Units/Rail| **Preferred** devices are recommended choices for future use and best overall value. Publication Order Number: **MJF44H11/D** **1** © Semiconductor Components Industries, LLC, 2009 **April, 2009 − Rev. 6** ## **MJF44H11 (NPN), MJF45H11 (PNP)** ## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)|||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Collector−Emitter Sustaining Voltage
(IC= 30 mA, IB= 0)|VCEO(sus)|80|−|−|Vdc| |Collector Cutoff Current
(VCE= Rated VCEO, VBE= 0)|ICES|−|−|1.0|�A| |Emitter Cutoff Current
(VEB= 5 Vdc)|IEBO|−|−|10|�A| |**ON CHARACTERISTICS**|||||| |Collector−Emitter Saturation Voltage
(IC= 8 Adc, IB= 0.4 Adc)|VCE(sat)|−|−|1.0|Vdc| |Base−Emitter Saturation Voltage
(IC= 8 Adc, IB= 0.8 Adc)|VBE(sat)|−|−|1.5|Vdc| |DC Current Gain
(VCE= 1 Vdc, IC= 2 Adc)|hFE|60|−|−|−| |DC Current Gain
(VCE= 1 Vdc, IC= 4 Adc)||40|−|−|| |**DYNAMIC CHARACTERISTICS**|||||| |Collector Capacitance
(VCB= 10 Vdc, ftest= 1 MHz)
MJF44H11
MJF45H11|Ccb|−
−|130
230|−
−|pF| |Gain Bandwidth Product
(IC= 0.5 Adc, VCE= 10 Vdc, f = 20 MHz)
MJF44H11
MJF45H11|fT|−
−|50
40|−
−|MHz| |**SWITCHING TIMES**|||||| |Delay and Rise Times
(IC= 5 Adc, IB1= 0.5 Adc)
MJF44H11
MJF45H11|td+ tr|−
−|300
135|−
−|ns| |Storage Time
(IC= 5 Adc, IB1= IB2= 0.5 Adc)
MJF44H11
MJF45H11|ts|−
−|500
500|−
−|ns| |Fall Time
(IC= 5 Adc, IB1= IB2= 0.5 Adc)
MJF44H11
MJF45H11|tf|−
−|140
100|−
−|ns| **==> picture [489 x 169] intentionally omitted <==** **----- Start of picture text -----**
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1 Z�JC(t) = r(t) R�JC P(pk)
0.07 0.05 R �JC = 1.56 ° C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02
0.03 PULSE TRAIN SHOWN t 1
READ TIME AT t1 t2
0.02 0.01 SINGLE PULSE TJ(pk) - TC = P(pk) Z�JC(t) DUTY CYCLE, D = t 1 /t 2
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
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**Figure 1. Thermal Response** **http://onsemi.com** **2** ## **MJF44H11 (NPN), MJF45H11 (PNP)** **==> picture [234 x 170] intentionally omitted <==** **----- Start of picture text -----**
100
50
30
20 1.0 ms
100 �s
10
10 �s
5.0
3.0
2.0 TC ≤ 70° C dc
1.0 DUTY CYCLE ≤ 50% 1.0 �s
0.5
0.3
0.2
MJF44H11/MJF45H11
0.1
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMPS)
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There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) � 150°C. TJ(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. **Figure 2. Maximum Rated Forward Bias Safe Operating Area** **==> picture [253 x 182] intentionally omitted <==** **----- Start of picture text -----**
TA TC
3.0 60
2.0 40
T A
1.0 20 TC
0 0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
**----- End of picture text -----**
**Figure 3. Power Derating** **http://onsemi.com** **3** **MJF44H11 (NPN), MJF45H11 (PNP)** **==> picture [483 x 607] intentionally omitted <==** **----- Start of picture text -----**
1000 1000
VCE = 4 V VCE = 4 V
100 100
1 V
VCE = 1 V
TJ = 25°C TJ = 25°C
10 10
0.1 1 10 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 4. MJF44H11 DC Current Gain Figure 5. MJF45H11 DC Current Gain
1000 1000
TJ = 125°C
TJ = 125°C 25°C
-�40°C
25°C
100 100
-�40°C
VCE = 1 V
VCE = 1 V
10 10
0.1 1 10 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 6. MJF44H11 Current Gain Figure 7. MJF45H11 Current Gain
versus Temperature versus Temperature
1.2 1.2
1 VBE(sat) 1 VBE(sat)
0.8 0.8
0.6 0.6
IC/IB = 10 IC/IB = 10
0.4 TJ = 25°C 0.4 TJ = 25°C
VCE(sat)
0.2 VCE(sat) 0.2
0 0
0.1 1 10 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN
SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS)
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**Figure 8. MJF44H11 On−Voltages** **Figure 9. MJF45H11 On−Voltages** **http://onsemi.com** **4** **==> picture [489 x 497] intentionally omitted <==** **----- Start of picture text -----**
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE K
S DATE 27 FEB 2009
NOTES:
−T− SEATINGPLANE 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
−B− C 2. CONTROLLING DIMENSION: INCH
F 3. 221D-01 THRU 221D-02 OBSOLETE, NEW
S STANDARD 221D-03.
Q U INCHES MILLIMETERS
SCALE 1:1 DIM MIN MAX MIN MAX
A A 0.617 0.635 15.67 16.12
B 0.392 0.419 9.96 10.63
1 2 3 C 0.177 0.193 4.50 4.90
D 0.024 0.039 0.60 1.00
a H n ==So= F 0.116 0.129 2.95 3.28
−Y− G 0.100 BSC 2.54 BSC
K
H 0.118 0.135 3.00 3.43
J 0.018 0.025 0.45 0.63
hd ay : —
|| oe === K 0.503 0.541 12.78 13.73
G J L 0.048 0.058 1.23 1.47
N 0.200 BSC 5.08 BSC
N R Q 0.122 0.138 3.10 3.50
_ L R 0.099 0.117 2.51 2.96
S 0.092 0.113 2.34 2.87
D 3 PL U 0.239 0.271 6.06 6.88
0.25 (0.010) M B M Y
MARKING
DIAGRAMS
STYLE 1: STYLE 2: STYLE 3:
PIN 1. GATE PIN 1. BASE PIN 1. ANODE
2. DRAIN 2. COLLECTOR 2. CATHODE
3. SOURCE 3. EMITTER 3. ANODE
Qo Qo
STYLE 4: STYLE 5: STYLE 6: xxxxxxG AYWW
PIN 1. CATHODE PIN 1. CATHODE PIN 1. MT 1 AYWW xxxxxxG
2.3. ANODECATHODE 2. 3. ANODEGATE 2. 3. MT 2GATE AKA
tr | ot
Bipolar Rectifier
xxxxxx = Specific Device Code A = Assembly Location
G = Pb−Free Package Y = Year
A = Assembly Location WW = Work Week
Y = Year xxxxxx = Device Code
WW = Work Week G = Pb−Free Package
AKA = Polarity Designator
**----- End of picture text -----**
Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42514B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: TO−220 FULLPAK PAGE 1 OF 1** ~~ee~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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