# Transistor, PNP, 80 V, 4 A, 150 DEG C, 40 W, TO-225 ![Product image](https://novapart.co/image/farnell:3615439/) **URL**: https://novapart.co/products/MJE703G./transistor-pnp-80-v-4-a-150-deg-c-40-w-to-225 **SKU**: MJE703G. **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.3040 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Power Dissipation | 40W | | Dc Current Gain Hfe | 750hFE | | Transistor Mounting | Through Hole | | Transistor Polarity | PNP | | Transistor Case Style | TO-225 | | Dc Current Gain Hfe Min | 750hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 4A | | Collector Emitter Voltage Max | 80V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3615439/) ## MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN) ## Plastic Darlington Complementary Silicon Power Transistors ## **http://onsemi.com** ## **4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT** These devices are designed for general−purpose amplifier and low−speed switching applications. ## **Features** - High DC Current Gain −hFE = 2000 (Typ) @ IC - = 2.0 Adc - Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication **==> picture [160 x 128] intentionally omitted <==** **----- Start of picture text -----**
NPN PNP
COLLECTOR 2, 4 COLLECTOR 2, 4
BASE BASE
3 3
& &
EMITTER 1 EMITTER 1
MJE800 MJE700
MJE802 MJE702
MJE803 MJE703
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- Choice of Packages − MJE700 and MJE800 Series - These Devices are Pb−Free and are RoHS Compliant* BASE BASE 3 3 - **MAXIMUM RATINGS** - ~~—,~~ **Rating Symbol Value Unit** ~~& &~~ - These Devices are Pb−Free and are RoHS Compliant* **MAXIMUM RATINGS Rating Symbol Value Unit** Collector−Emitter Voltage VCEO Vdc MJE700G, MJE800G 60 MJE702G, MJE703G, MJE802G, 80 MJE803G ~~pT~~ Collector−Base Voltage VCB Vdc MJE700G, MJE800G 60 MJE702G, MJE703G, MJE802G, 80 MJE803G Emitter−Base Voltage VEB 5.0 Vdc Collector Current IC 4.0 Adc ~~—~~ Base Current IB 0.1 Adc Total Power Dissipation PD @ TC = 25 C 40 W Derate above 25 C 0.32 mW/ C Operating and Storage Junction TJ, Tstg –55 to +150 C Temperature Range **==> picture [120 x 56] intentionally omitted <==** **----- Start of picture text -----**
TO−225
CASE 77−09
STYLE 1
1
2 3
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## **MARKING DIAGRAM** Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. YWW JEx0yG ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Thermal Resistance, Junction−to−Case|R JC|3.12|C/W| |Thermal Resistance, Junction−to−Ambient|R JA|83.3|C/W| Y = Year WW = Work Week JEx0y = Device Code x = 7 or 8 y = 0, 2, or 3 G = Pb−Free Package ## **ORDERING INFORMATION** - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: **MJE700/D** **1** © Semiconductor Components Industries, LLC, 2013 **December, 2013 − Rev. 12** ## **MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN)** ## **ELECTRICAL CHARACTERISTICS** (TC = 25 � C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise|noted)|||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||| |Collector−Emitter Breakdown Voltage (Note 1)
(IC= 50 mAdc, IB= 0)
MJE700G, MJE800G
MJE702G, MJE703G, MJE802G, MJE803G|V(BR)CEO|60
80|−
−|Vdc| |Collector Cutoff Current
(VCE= 60 Vdc, IB= 0)
MJE700G, MJE800G
(VCE= 80 Vdc, IB= 0)
MJE702G, MJE703G, MJE802G, MJE803G|ICEO|−
−|100
100|�Adc| |Collector Cutoff Current
(VCB= Rated BVCEO, IE= 0)
(VCB= Rated BVCEO, IE= 0, TC= 100�C)|ICBO|−
−|100
500|�Adc| |Emitter Cutoff Current
(VBE= 5.0 Vdc, IC= 0)|IEBO|−|2.0|mAdc| |**ON CHARACTERISTICS**||||| |DC Current Gain (Note 1)
(IC= 1.5 Adc, VCE= 3.0 Vdc)
MJE700G, MJE702G, MJE800G, MJE802G
(IC= 2.0 Adc, VCE= 3.0 Vdc)
MJE703G, MJE803G
(IC= 4.0 Adc, VCE= 3.0 Vdc)
All devices|hFE|750
750
100|−
−
−|−| |Collector−Emitter Saturation Voltage (Note 1)
(IC= 1.5 Adc, IB= 30 mAdc)
MJE700G, MJE702G, MJE800G, MJE802G
(IC= 2.0 Adc, IB= 40 mAdc)
MJE703G, MJE803G
(IC= 4.0 Adc, IB= 40 mAdc)
All devices|VCE(sat)|−
−
−|2.5
2.8
3.0|Vdc| |Base−Emitter On Voltage (Note 1)
(IC= 1.5 Adc, VCE= 3.0 Vdc)
MJE700G, MJE702G, MJE800G, MJE802G
(IC= 2.0 Adc, VCE= 3.0 Vdc)
MJE703G, MJE803G
(IC= 4.0 Adc, VCE= 3.0 Vdc)
All devices|VBE(on)|−
−
−|2.5
2.5
3.0|Vdc| |**DYNAMIC CHARACTERISTICS**||||| |Small−Signal Current Gain
(IC= 1.5 Adc, VCE= 3.0 Vdc, f = 1.0 MHz)|hfe|1.0|−|−| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2.0%. **==> picture [243 x 172] intentionally omitted <==** **----- Start of picture text -----**
50
40
30
20
10
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
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**Figure 1. Power Derating** **http://onsemi.com** **2** **MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN)** **==> picture [490 x 587] intentionally omitted <==** **----- Start of picture text -----**
4.0
R�DB & R1, MUST BE FAST RECOVERY TYPE, e.g.:C VARIED TO OBTAIN DESIRED CURRENT LEVELS -�30 VVCC ts VICCC/IB = 30 V = 250 ITB1J = 25 = IB2°C
��1N5825 USED ABOVE IB ≈ 100 mA 2.0
��MSD6100 USED BELOW IB ≈ 100 mA RC SCOPE
TUT
V2 RB tf
APPROX 1.0
+�8.0 V 0.8
0 51 D1 ≈ 6.0 k ≈ 150 0.6 tr
V1
APPROX + 4.0 V 0.4
-12 V 25 �s For td and tr, D1 id disconnected PNP td @ VBE(off) = 0
DUTY CYCLE = 1.0%tr, tf ≤ 10 ns and Vto obtain desired test currents.2 = 0, RB and RC are varied 0.2 NPN
For NPN test circuit, reverse diode, 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0
polarities and input pulses. IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Times Test Circuit Figure 3. Switching Times
1.0
0.7
D = 0.5
0.5
0.3 0.2
0.2 0.1 �JC(t) = r(t) �JC P (pk)
0.1 0.05 �JC = 3.12°C/W MAX
D CURVES APPLY FOR POWER
0.07
0.05 0.01 PULSE TRAIN SHOWN t 1
READ TIME AT t 1 t 2
0.03 SINGLE PULSE T J(pk) - T C = P (pk) � JC (t) DUTY CYCLE, D = t1/t2
0.02
0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000
t, TIME (ms)
Figure 4. Thermal Response (MJE700, 800 Series)
ACTIVE−REGION SAFE−OPERATING AREA
10 10
7.0 7.0
5.0 5.0�ms 1.0�ms 100��s 5.0 5.0�ms 1.0�ms 100��s
3.0 3.0
2.0 dc 2.0 dc
1.0 TJ = 150°C 1.0 TJ = 150°C
0.7 BONDING WIRE LIMITED 0.7 BONDING WIRE LIMITED
0.5 THERMALLY LIMITED 0.5 THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE) @ TC = 25°C (SINGLE PULSE)
0.3 SECOND BREAKDOWN LIMITED 0.3 SECOND BREAKDOWN LIMITED
0.2 0.2
MJE702, 703 MJE802, 803
MJE700 MJE800
0.1 0.1
5.0 7.0 10 20 30 50 70 100 5.0 7.0 10 20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. MJE700 Series Figure 6. MJE800 Series
μ
t, TIME (��s)
(NORMALIZED)
r(t), TRANSIENT THERMAL RESISTANCE
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
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There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5 and 6 are based on TJ(pk) = 150�C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150�C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. **http://onsemi.com** **3** **MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN)** **==> picture [490 x 655] intentionally omitted <==** **----- Start of picture text -----**
PNP NPN
MJE700 Series MJE800 Series
6.0 k 6.0 k
4.0 k TJ = 125°C VCE = 3.0 V 4.0 k TJ = 125°C VCE = 3.0 V
3.0 k 25°C 3.0 k
2.0 k 2.0 k 25°C
-�55°C -�55°C
1.0 k 1.0 k
800 800
600 600
400 400
300 300
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 7. DC Current Gain
3.4 3.4
TJ = 25°C IC = TJ = 25°C
3.0 3.0
0.5 A
IC = 1.0 A 2.0 A 4.0 A 1.0 A 2.0 A 4.0 A
2.6 0.5 A 2.6
2.2 2.2
1.8 1.8
1.4 1.4
1.0 1.0
0.6 0.6
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 8. Collector Saturation Region
2.2 2.2
TJ = 25°C TJ = 25°C
1.8 1.8
1.4 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V 1.4 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V
1.0 1.0
VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250
0.6 0.6
0.2 0.2
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS)
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**Figure 9. “On” Voltages** **http://onsemi.com** **4** **MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN)** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**| |MJE700G|TO−225
(Pb−Free)|50 Units / Bulk| |MJE702G|TO−225
(Pb−Free)|50 Units / Bulk| |MJE703G|TO−225
(Pb−Free)|50 Units / Bulk| |MJE800G|TO−225
(Pb−Free)|50 Units / Bulk| |MJE802G|TO−225
(Pb−Free)|50 Units / Bulk| |MJE803G|TO−225
(Pb−Free)|50 Units / Bulk| **http://onsemi.com** **5** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [53 x 29] intentionally omitted <==** **----- Start of picture text -----**
TO−225
CASE 77−09
ISSUE AD
**----- End of picture text -----**
**==> picture [472 x 492] intentionally omitted <==** **----- Start of picture text -----**
4 ISSUE AD
DATE 25 MAR 2015
1 3
2 3 2 1
FRONT VIEW BACK VIEW
SCALE 1:1
E NOTES:
1. DIMENSIONING AND TOLERANCING PER
A1 ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
Q A 3. NUMBER AND SHAPE OF LUGS OPTIONAL.
PIN 4 MILLIMETERS
BACKSIDE TAB DIM MIN MAX
A 2.40 3.00
A1 1.00 1.50
b 0.60 0.90
D b2 0.51 0.88
P c 0.39 0.63
D 10.60 11.10
E 7.40 7.80
1 2 3
e 2.04 2.54
L 14.50 16.63
L1 1.27 2.54
P 2.90 3.30
L1 Q 3.80 4.20
GENERIC
L
MARKING DIAGRAM*
YWW
XX
XXXXXG
2X b2 Y = Year
WW = Work Week
2X e XXXXX = Device Code
b c G = Pb−Free Package
FRONT VIEW SIDE VIEW *This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ � ”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:
PIN 1. EMITTER PIN 1. CATHODE PIN 1. BASE PIN 1. ANODE 1 PIN 1. MT 1
2., 4. COLLECTOR 2., 4. ANODE 2., 4. COLLECTOR 2., 4. ANODE 2 2., 4. MT 2
3. BASE 3. GATE 3. EMITTER 3. GATE 3. GATE
STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10:
PIN 1. CATHODE PIN 1. MT 1 PIN 1. SOURCE PIN 1. GATE PIN 1. SOURCE
2., 4. GATE 2., 4. GATE 2., 4. GATE 2., 4. DRAIN 2., 4. DRAIN
3. ANODE 3. MT 2 3. DRAIN 3. SOURCE 3. GATE
**----- End of picture text -----**
DATE 25 MAR 2015 **==> picture [493 x 37] intentionally omitted <==** **----- Start of picture text -----**
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42049B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: TO−225 PAGE 1 OF 1
**----- End of picture text -----**
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