# Bipolar (BJT) Single Transistor, PNP, 350 V, 1 A, 40 W, TO-220, Through Hole
**URL**: https://novapart.co/products/MJE5731G/bipolar-bjt-single-transistor-pnp-350-v-1-a-40-w
**SKU**: MJE5731G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.6550
**Stock**: 100+
**Lead Time**: 2 days (indicative)
## Description
Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-350V; Transition Frequency ft:10MHz; Power Dissipation Pd:40W; DC Collector Current:-1A; DC Current Gain hFE:10hFE; Transi
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 40W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | PNP |
| Transition Frequency | 10MHz |
| Transistor Case Style | TO-220 |
| Dc Current Gain Hfe Min | 10hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 1A |
| Collector Emitter Voltage Max | 350V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2627982/)
## MJE5730, MJE5731, MJE5731A
## High Voltage PNP Silicon Plastic Power Transistors
These devices are designed for line operated audio output amplifier, switch−mode power supply drivers and other switching applications.
## **Features**
- Popular TO−220 Plastic Package
- PNP Complements to the TIP47 thru TIP50 Series
- These Devices are Pb−Free and are RoHS Compliant*
**www.onsemi.com**
**1.0 AMPERE POWER TRANSISTORS PCP SILICON 300−350−400 VOLTS 50 WATTS**
## **MAXIMUM RATINGS**
**Rating Symbol Value Unit** COLLECTOR 2, 4 Collector−Emitter Voltage VCEO Vdc MJE5730 300 MJE5731 350 MJE5731A 375 1 BASE Collector−Base Voltage VCB Vdc ~~TTT}~~ MJE5730 300 ~~¢~~ MJE5731 350 3 MJE5731A 375 EMITTER Emitter−Base Voltage VEB 5.0 Vdc 4 ~~pt~~ Collector Current − Continuous ~~ft~~ IC 1.0 Adc Collector Current − Peak ICM 3.0 Adc ~~———~~ Base Current IB 1.0 Adc » **TO−220** Total Device Dissipation PD **CASE 221A−09** @ TDerate above 25C = 25 C ° C 0.3240 W/WC **STYLE 1** Total Device Dissipation PD ~~i,~~ @ TC = 25 C 2.0 W 1 ~~ee~~ Derate above 25 ° C 0.016 W/ C 2 3 Unclamped Inducting Load Energy E ~~ee~~ 20 mJ (See Figure 10) **MARKING DIAGRAM** ~~ee~~ Operating and Storage Junction TJ, Tstg −65 to +150 C Temperature Range ~~ee ee ee ee~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ~~eee ee Co~~ assumed, damage may occur and reliability may be affected. MJE573xG **THERMAL CHARACTERISTICS** AY WW **Characteristics Symbol Max Unit** Thermal Resistance, Junction−to−Case R JC 3.125 C/W Thermal Resistance, Junction−to−Ambient R JA 62.5 C/W MJE573x = Device Code x = 0, 1, or 1A G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week
- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
## **ORDERING INFORMATION**
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.
Publication Order Number: **MJE5730/D**
**1**
© Semiconductor Components Industries, LLC, 2015 **January, 2015 − Rev. 8**
## **MJE5730, MJE5731, MJE5731A**
## **ELECTRICAL CHARACTERISTICS** (TC = 25 � C unless otherwise noted)
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|---|---|---|---|---|
|**OFF CHARACTERISTICS**|||||
|Collector−Emitter Sustaining Voltage (Note 1)
(IC= 30 mAdc, IB= 0)
MJE5730
MJE5731
MJE5731A|VCEO(sus)|300
350
375|−
−
−|Vdc|
|Collector Cutoff Current
(VCE= 200 Vdc, IB= 0)
MJE5730
(VCE= 250 Vdc, IB= 0)
MJE5731
(VCE= 300 Vdc, IB= 0)
MJE5731A|ICEO|−
−
−|1.0
1.0
1.0|mAdc|
|Collector Cutoff Current
(VCE= 300 Vdc, VBE= 0)
MJE5730
(VCE= 350 Vdc, VBE= 0)
MJE5731
(VCE= 400 Vdc, VBE= 0)
MJE5731A|ICES|−
−
−|1.0
1.0
1.0|mAdc|
|Emitter Cutoff Current
(VBE= 5.0 Vdc, IC= 0)|IEBO|−|1.0|mAdc|
|**ON CHARACTERISTICS**(Note 1)|||||
|DC Current Gain
(IC= 0.3 Adc, VCE= 10 Vdc)
(IC= 1.0 Adc, VCE= 10 Vdc)|hFE|30
10|150
−|−|
|Collector−Emitter Saturation Voltage
(IC= 1.0 Adc, IB= 0.2 Adc)|VCE(sat)|−|1.0|Vdc|
|Base−Emitter On Voltage
(IC= 1.0 Adc, VCE= 10 Vdc)|VBE(on)|−|1.5|Vdc|
|**DYNAMIC CHARACTERISTICS**|||||
|Current Gain − Bandwidth Product
(IC= 0.2 Adc, VCE= 10 Vdc, f = 2.0 MHz)|fT|10|−|MHz|
|Small−Signal Current Gain
(IC= 0.2 Adc, VCE= 10 Vdc, f = 1.0 kHz)|hfe|25|−|−|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2.0%.
**==> picture [488 x 179] intentionally omitted <==**
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200 1.4
VCE = 10 V
100 TJ = 150°C 1.2
25°C 1
50
30 -�55°C 0.8 TJ = 25°C
20
0.6
10 -�55°C
0.4 150°C
5.0
0.2 VCE(sat)) @ IC/IB = 5.0
3.0
2.0 0
0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage
hFE, DC CURRENT GAIN
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
**----- End of picture text -----**
**www.onsemi.com**
**2**
**MJE5730, MJE5731, MJE5731A**
**==> picture [235 x 375] intentionally omitted <==**
**----- Start of picture text -----**
1.4
1.2
1.0 TJ = - 55°C
VBE(sat) @ IC/IB = 5.0
0.8
25°C
0.6 150°C
0.4
0.2
0
0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Base−Emitter Voltage
10
5.0
2.0 1.0�ms 100 �s
1.0 TC = 25°C dc 500 �s
0.5
0.2
0.1 BONDING WIRE LIMIT
0.05 THERMAL LIMIT
SECOND BREAKDOWN LIMIT MJE5730
0.02 MJE5731
MJE5732
0.01
5.0 10 20 30 50 100 200 300 500
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V, VOLTAGE (V)
IC, COLLECTOR CURRENT (AMP)
**----- End of picture text -----**
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**----- Start of picture text -----**
1.0
SECOND BREAKDOWN
0.8 DERATING
0.6
THERMAL
DERATING
0.4
0.2
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C)
DERATING FACTOR
**----- End of picture text -----**
**Figure 4. Normalized Power Derating**
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150�C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150�C. TJ(pk) may be calculated from the data in Figure 6. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
**Figure 5. Forward Bias Safe Operating Area**
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**----- Start of picture text -----**
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.070.1 0.05 RR��JC(t)JC = = r(t) R 3.125°C/W MAX�JC P(pk)
0.05 0.02 D CURVES APPLY FOR POWER
0.03 PULSE TRAIN SHOWN t 1
0.02 SINGLE PULSE 0.01 T READ TIME AT tJ(pk) - T C = P (pk1) � JC(t) DUTY CYCLE, D = t t2 1 /t 2
0.01
0.01 0.02 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1 k
t, TIME (ms)
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
**----- End of picture text -----**
**Figure 6. Thermal Response**
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**3**
**MJE5730, MJE5731, MJE5731A**
**==> picture [56 x 7] intentionally omitted <==**
**----- Start of picture text -----**
TURN-ON PULSE
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**==> picture [433 x 197] intentionally omitted <==**
**----- Start of picture text -----**
t1
VBE(off)
Vin 0 V
VCC
RC
AP t1 ≤ 7.0 ns SCOPE
PROX.-11 V 100 t≤3 < 15 ns t2 < 500 �s Vin RB
t2 t3
51 Cjd << Ceb
APPROX. +�9.0 V +�4.0 V
DUTY CYCLE ≈ 2.0%
TURN-OFF PULSE
**----- End of picture text -----**
**Figure 7. Switching Time Equivalent Circuit**
**==> picture [237 x 169] intentionally omitted <==**
**----- Start of picture text -----**
1.0
0.5 tr TVJCC = 25 = 200 V°C
0.3 IC/IB = 5.0
0.2 td
0.1
0.05
0.03
0.02
0.01
0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0
IC, COLLECTOR CURRENT (AMPS)
μ
t, TIME (��s)
**----- End of picture text -----**
**Figure 8. Turn−On Resistive Switching Times**
**==> picture [236 x 170] intentionally omitted <==**
**----- Start of picture text -----**
5.0
3.0 ts TVJCC = 25 = 200 V°C
2.0
IC/IB = 5.0
tf
1.0
0.5
0.3
0.2
0.1
0.05
0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0
IC, COLLECTOR CURRENT (AMPS)
μ
t, TIME (��s)
**----- End of picture text -----**
**Figure 9. Resistive Turn−Off Switching Times**
**Test Circuit**
**==> picture [237 x 114] intentionally omitted <==**
**----- Start of picture text -----**
VCE MONITOR
RBB1 = TUT
MJE171 150 � 100 mH
50 +
INPUT VCC = 20 V
- IC MONITOR
50 RBB2 =
100 �
+ VBB2 = RS =
VBB1 = 10 V 0 0.1 �
-
**----- End of picture text -----**
**Voltage and Current Waveforms**
**==> picture [196 x 151] intentionally omitted <==**
**----- Start of picture text -----**
tw ≈ 3 ms
(SEE NOTE 1)
0 V
INPUT
VOLTAGE
-�5 V
100 ms
0.63 A
COLLECTOR
CURRENT
0 V
VCER
COLLECTOR
VOLTAGE
10 V
VCE(sat)
**----- End of picture text -----**
**Figure 10. Inductive Load Switching**
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**4**
**MJE5730, MJE5731, MJE5731A**
## **ORDERING INFORMATION**
|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**|
|MJE5730G|TO−220
(Pb−Free)|50 Units / Rail|
|MJE5731G|TO−220
(Pb−Free)|50 Units / Rail|
|MJE5731AG|TO−220
(Pb−Free)|50 Units / Rail|
**www.onsemi.com**
**5**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
**TO−220** CASE 221A ISSUE AK
DATE 13 JAN 2022
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SCALE 1:1
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STYLE 1: STYLE 2: STYLE 3: STYLE 4:
PIN 1. BASE PIN 1. BASE PIN 1. CATHODE PIN 1. MAIN TERMINAL 1
2. COLLECTOR 2. EMITTER 2. ANODE 2. MAIN TERMINAL 2
3. EMITTER 3. COLLECTOR 3. GATE 3. GATE
4. COLLECTOR 4. EMITTER 4. ANODE 4. MAIN TERMINAL 2
STYLE 5: STYLE 6: STYLE 7: STYLE 8:
PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE
2. DRAIN 2. CATHODE 2. ANODE 2. ANODE
3. SOURCE 3. ANODE 3. CATHODE 3. EXTERNAL TRIP/DELAY
4. DRAIN 4. CATHODE 4. ANODE 4. ANODE
STYLE 9: STYLE 10: STYLE 11: STYLE 12:
PIN 1. GATE PIN 1. GATE PIN 1. DRAIN PIN 1. MAIN TERMINAL 1
2. COLLECTOR 2. SOURCE 2. SOURCE 2. MAIN TERMINAL 2
3. EMITTER 3. DRAIN 3. GATE 3. GATE
4. COLLECTOR 4. SOURCE 4. SOURCE 4. NOT CONNECTED
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Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42148B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: TO−220 PAGE 1 OF 1
**----- End of picture text -----**
**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others.
www.onsemi.com
© Semiconductor Components Industries, LLC, 2019
**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **PUBLICATION ORDERING INFORMATION**
**LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative
◊
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## Links
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- [Supplier page](https://es.farnell.com/on-semiconductor/mje5731g/transistor-pnp-350v-40w-to-220/dp/2627982)
---
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