# Bipolar (BJT) Single Transistor, PNP, 300 V, 1 A, 40 W, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:2845312/)

**URL**: https://novapart.co/products/MJE5730G/bipolar-bjt-single-transistor-pnp-300-v-1-a-40-w
**SKU**: MJE5730G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.6210
**Stock**: 200+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:10MHz; Power Dissipation Pd:40W; DC Collector Current:-1A; DC Current Gain hFE:10hFE; Transis

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 40W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | PNP |
| Transition Frequency | 10MHz |
| Transistor Case Style | TO-220 |
| Dc Current Gain Hfe Min | 10hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 1A |
| Collector Emitter Voltage Max | 300V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2845312/)

## MJE5730, MJE5731, MJE5731A 

## High Voltage PNP Silicon Plastic Power Transistors 

These devices are designed for line operated audio output amplifier, switch−mode power supply drivers and other switching applications. 

## **Features** 

- Popular TO−220 Plastic Package 

- PNP Complements to the TIP47 thru TIP50 Series 

- These Devices are Pb−Free and are RoHS Compliant* 

**www.onsemi.com** 

**1.0 AMPERE POWER TRANSISTORS PCP SILICON 300−350−400 VOLTS 50 WATTS** 

## **MAXIMUM RATINGS** 

**Rating Symbol Value Unit** COLLECTOR 2, 4 Collector−Emitter Voltage VCEO Vdc MJE5730 300 MJE5731 350 MJE5731A 375 1 BASE Collector−Base Voltage VCB Vdc ~~TTT}~~ MJE5730 300 ~~¢~~ MJE5731 350 3 MJE5731A 375 EMITTER Emitter−Base Voltage VEB 5.0 Vdc 4 ~~pt~~ Collector Current − Continuous ~~ft~~ IC 1.0 Adc Collector Current − Peak ICM 3.0 Adc ~~———~~ Base Current IB 1.0 Adc » **TO−220** Total Device Dissipation PD **CASE 221A−09** @ TDerate above 25C = 25 C ° C 0.3240 W/WC **STYLE 1** Total Device Dissipation PD ~~i,~~ @ TC = 25 C 2.0 W 1 ~~ee~~ Derate above 25 ° C 0.016 W/ C 2 3 Unclamped Inducting Load Energy E ~~ee~~ 20 mJ (See Figure 10) **MARKING DIAGRAM** ~~ee~~ Operating and Storage Junction TJ, Tstg −65 to +150 C Temperature Range ~~ee ee ee ee~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ~~eee ee Co~~ assumed, damage may occur and reliability may be affected. MJE573xG **THERMAL CHARACTERISTICS** AY   WW **Characteristics Symbol Max Unit** Thermal Resistance, Junction−to−Case R JC 3.125 C/W Thermal Resistance,  Junction−to−Ambient R JA 62.5 C/W MJE573x = Device Code x = 0, 1, or 1A G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week 

- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 

Publication Order Number: **MJE5730/D** 

**1** 

© Semiconductor Components Industries, LLC, 2015 **January, 2015 − Rev. 8** 

## **MJE5730, MJE5731, MJE5731A** 

## **ELECTRICAL CHARACTERISTICS** (TC = 25 � C unless otherwise noted) 

|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|---|---|---|---|---|
|**OFF CHARACTERISTICS**|||||
|Collector−Emitter Sustaining Voltage (Note 1)<br>(IC= 30 mAdc, IB= 0)<br>MJE5730<br>MJE5731<br>MJE5731A|VCEO(sus)|300<br>350<br>375|−<br>−<br>−|Vdc|
|Collector Cutoff Current<br>(VCE= 200 Vdc, IB= 0)<br>MJE5730<br>(VCE= 250 Vdc, IB= 0)<br>MJE5731<br>(VCE= 300 Vdc, IB= 0)<br>MJE5731A|ICEO|−<br>−<br>−|1.0<br>1.0<br>1.0|mAdc|
|Collector Cutoff Current<br>(VCE= 300 Vdc, VBE= 0)<br>MJE5730<br>(VCE= 350 Vdc, VBE= 0)<br>MJE5731<br>(VCE= 400 Vdc, VBE= 0)<br>MJE5731A|ICES|−<br>−<br>−|1.0<br>1.0<br>1.0|mAdc|
|Emitter Cutoff Current<br>(VBE= 5.0 Vdc, IC= 0)|IEBO|−|1.0|mAdc|
|**ON CHARACTERISTICS**(Note 1)|||||
|DC Current Gain<br>(IC= 0.3 Adc, VCE= 10 Vdc)<br>(IC= 1.0 Adc, VCE= 10 Vdc)|hFE|30<br>10|150<br>−|−|
|Collector−Emitter Saturation Voltage<br>(IC= 1.0 Adc, IB= 0.2 Adc)|VCE(sat)|−|1.0|Vdc|
|Base−Emitter On Voltage<br>(IC= 1.0 Adc, VCE= 10 Vdc)|VBE(on)|−|1.5|Vdc|
|**DYNAMIC CHARACTERISTICS**|||||
|Current Gain − Bandwidth Product<br>(IC= 0.2 Adc, VCE= 10 Vdc, f = 2.0 MHz)|fT|10|−|MHz|
|Small−Signal Current Gain<br>(IC= 0.2 Adc, VCE= 10 Vdc, f = 1.0 kHz)|hfe|25|−|−|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2.0%. 

**==> picture [488 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
200 1.4<br>VCE = 10 V<br>100 TJ = 150°C 1.2<br>25°C 1<br>50<br>30 -�55°C 0.8 TJ = 25°C<br>20<br>0.6<br>10 -�55°C<br>0.4 150°C<br>5.0<br>0.2 VCE(sat)) @ IC/IB = 5.0<br>3.0<br>2.0 0<br>0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0<br>IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)<br>Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage<br>hFE, DC CURRENT GAIN<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**www.onsemi.com** 

**2** 

**MJE5730, MJE5731, MJE5731A** 

**==> picture [235 x 375] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.4<br>1.2<br>1.0 TJ = - 55°C<br>VBE(sat) @ IC/IB = 5.0<br>0.8<br>25°C<br>0.6 150°C<br>0.4<br>0.2<br>0<br>0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0<br>IC, COLLECTOR CURRENT (AMPS)<br>Figure 3. Base−Emitter Voltage<br>10<br>5.0<br>2.0 1.0�ms 100 �s<br>1.0 TC = 25°C dc 500 �s<br>0.5<br>0.2<br>0.1 BONDING WIRE LIMIT<br>0.05 THERMAL LIMIT<br>SECOND BREAKDOWN LIMIT MJE5730<br>0.02 MJE5731<br>MJE5732<br>0.01<br>5.0 10 20 30 50 100 200 300 500<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>V, VOLTAGE (V)<br>IC, COLLECTOR CURRENT (AMP)<br>**----- End of picture text -----**<br>


**==> picture [229 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0<br>SECOND BREAKDOWN<br>0.8 DERATING<br>0.6<br>THERMAL<br>DERATING<br>0.4<br>0.2<br>0<br>0 25 50 75 100 125 150 175<br>TC, CASE TEMPERATURE (°C)<br>DERATING FACTOR<br>**----- End of picture text -----**<br>


**Figure 4. Normalized Power Derating** 

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 

The data of Figure 5 is based on TJ(pk) = 150�C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150�C. TJ(pk) may be calculated from the data in Figure 6. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 

**Figure 5. Forward Bias Safe Operating Area** 

**==> picture [490 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0<br>0.7<br>D = 0.5<br>0.5<br>0.3<br>0.2<br>0.2<br>0.1<br>0.070.1 0.05 RR��JC(t)JC = = r(t) R 3.125°C/W MAX�JC P(pk)<br>0.05 0.02 D CURVES APPLY FOR POWER<br>0.03 PULSE TRAIN SHOWN t 1<br>0.02 SINGLE PULSE 0.01 T READ TIME AT tJ(pk)  - T C  = P (pk1) � JC(t) DUTY CYCLE, D = t t2 1 /t 2<br>0.01<br>0.01 0.02 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1 k<br>t, TIME (ms)<br>r(t), TRANSIENT THERMAL<br>RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


**Figure 6. Thermal Response** 

**www.onsemi.com** 

**3** 

**MJE5730, MJE5731, MJE5731A** 

**==> picture [56 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
TURN-ON PULSE<br>**----- End of picture text -----**<br>


**==> picture [433 x 197] intentionally omitted <==**

**----- Start of picture text -----**<br>
t1<br>VBE(off)<br>Vin 0 V<br>VCC<br>RC<br>AP­ t1 ≤ 7.0 ns SCOPE<br>PROX.-11 V 100 t≤3 < 15 ns t2 < 500 �s Vin RB<br>t2 t3<br>51 Cjd << Ceb<br>APPROX. +�9.0 V +�4.0 V<br>DUTY CYCLE ≈ 2.0%<br>TURN-OFF PULSE<br>**----- End of picture text -----**<br>


**Figure 7. Switching Time Equivalent Circuit** 

**==> picture [237 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0<br>0.5 tr TVJCC = 25 = 200 V°C<br>0.3 IC/IB = 5.0<br>0.2 td<br>0.1<br>0.05<br>0.03<br>0.02<br>0.01<br>0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0<br>IC, COLLECTOR CURRENT (AMPS)<br>μ<br>t, TIME (��s)<br>**----- End of picture text -----**<br>


**Figure 8. Turn−On Resistive Switching Times** 

**==> picture [236 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
5.0<br>3.0 ts TVJCC = 25 = 200 V°C<br>2.0<br>IC/IB = 5.0<br>tf<br>1.0<br>0.5<br>0.3<br>0.2<br>0.1<br>0.05<br>0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0<br>IC, COLLECTOR CURRENT (AMPS)<br>μ<br>t, TIME (��s)<br>**----- End of picture text -----**<br>


**Figure 9. Resistive Turn−Off Switching Times** 

**Test Circuit** 

**==> picture [237 x 114] intentionally omitted <==**

**----- Start of picture text -----**<br>
VCE MONITOR<br>RBB1 = TUT<br>MJE171 150 � 100 mH<br>50 +<br>INPUT VCC = 20 V<br>- IC MONITOR<br>50 RBB2 =<br>100 �<br>+ VBB2 = RS =<br>VBB1 = 10 V 0 0.1 �<br>-<br>**----- End of picture text -----**<br>


**Voltage and Current Waveforms** 

**==> picture [196 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
tw ≈ 3 ms<br>(SEE NOTE 1)<br>0 V<br>INPUT<br>VOLTAGE<br>-�5 V<br>100 ms<br>0.63 A<br>COLLECTOR<br>CURRENT<br>0 V<br>VCER<br>COLLECTOR<br>VOLTAGE<br>10 V<br>VCE(sat)<br>**----- End of picture text -----**<br>


**Figure 10. Inductive Load Switching** 

**www.onsemi.com** 

**4** 

**MJE5730, MJE5731, MJE5731A** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**|
|MJE5730G|TO−220<br>(Pb−Free)|50 Units / Rail|
|MJE5731G|TO−220<br>(Pb−Free)|50 Units / Rail|
|MJE5731AG|TO−220<br>(Pb−Free)|50 Units / Rail|



**www.onsemi.com** 

**5** 

**MJE5730, MJE5731, MJE5731A** 

## **PACKAGE DIMENSIONS** 

**TO−220** CASE 221A−09 ISSUE AH 

NOTES: 

1. DIMENSIONING AND TOLERANCING PER ANSI 

**==> picture [232 x 186] intentionally omitted <==**

**----- Start of picture text -----**<br>
SEATING<br>−T− PLANE<br>B F C<br>T S<br>4<br>Q we A oF<br>1 2 3 U<br>H<br>K<br>Z<br>L R<br>V J<br>G<br>D<br>N<br>**----- End of picture text -----**<br>


|**DIM**<br>~~ee~~|**INCHES**<br>~~ee~~|**INCHES**<br>~~ee~~|**MILLIMETERS**<br>~~ee~~|**MILLIMETERS**<br>~~ee~~|
|---|---|---|---|---|
||**MIN**<br>**INCHES**<br>~~ee~~|**MAX**<br>**INCHES**<br>~~ee~~|**MIN**<br>**MILLIMETERS**<br>~~ee~~|**MAX**<br>**MILLIMETERS**<br>~~ee~~|
|**DIM**<br>**A**<br>~~ee~~|**MIN**<br>0.570<br>~~ee~~|**MAX**<br>0.620<br>~~ee~~|**MIN**<br>14.48<br>~~ee~~|**MAX**<br>15.75<br>~~ee~~|
|**B**<br>~~ee~~|0.380<br>~~ee~~|0.415<br>~~ee~~|9.66<br>~~ee~~|10.53<br>~~ee~~|
|**B**<br>**C**|0.380<br>0.160|0.415<br>0.190|9.66<br>4.07|10.53<br>4.83|
|**D**|0.025|0.038|0.64|0.96|
|**F**|0.142|0.161|3.61|4.09|
|**G**|0.095|0.105|2.42|2.66|
|**H**|0.110|0.161|2.80|4.10|
|**J**|0.014|0.024|0.36|0.61|
|**K**|0.500|0.562|12.70|14.27|
|**L**|0.045|0.060|1.15|1.52|
|**N**|0.190|0.210|4.83|5.33|
|**Q**|0.100|0.120|2.54|3.04|
|**Q**<br>**R**|0.100<br>0.080|0.120<br>0.110|2.54<br>2.04|3.04<br>2.79|
|**S**|0.045|0.055|1.15|1.39|
|**S**<br>**T**|0.045<br>0.235|0.055<br>0.255|1.15<br>5.97|1.39<br>6.47|
|**U**|0.000|0.050|0.00|1.27|
|**V**|0.045|---|1.15|---|
|**Z**|---|0.080|---|2.04|



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## **PUBLICATION ORDERING INFORMATION** 

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**MJE5730/D** 

**6** 



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