# Bipolar (BJT) Single Transistor, PNP, 300 V, 500 mA, 20 W, TO-126, Through Hole

![Product image](https://novapart.co/image/farnell:2453360/)

**URL**: https://novapart.co/products/MJE350STU/bipolar-bjt-single-transistor-pnp-300-v-500-ma-20
**SKU**: MJE350STU
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.1290
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 20W |
| Dc Current Gain Hfe | 30hFE |
| Transistor Mounting | Through Hole |
| Transistor Polarity | PNP |
| Transistor Case Style | TO-126 |
| Dc Current Gain Hfe Min | 30hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 500mA |
| Collector Emitter Voltage Max | 300V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2453360/)

**==> picture [111 x 35] intentionally omitted <==**

## **MJE350** 

## **High Voltage General Purpose Applications** 

- High Collector-Emitter Breakdown Voltage 

- Suitable for Transformer 

- Complement to MJE340 

**==> picture [117 x 93] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 TO-126<br>1. Emitter    2.Collector    3.Base<br>**----- End of picture text -----**<br>


## **..PNP Epitaxial Silicon Transistor** 

## **Absolute Maximum Ratings** TC=25°C unless otherwise noted 

|**Absolute**|**Maximum Ratings**TC=25°C unless otherwise noted|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Units**|
|VCBO|Collector-Base Voltage|- 300|V|
|VCEO|Collector-Emitter Voltage|- 300|V|
|VEBO|Emitter-Base Voltage|- 5|V|
|IC|Collector Current|- 500|mA|
|PC|Collector Dissipation (TC=25°C)|20|W|
|TJ|Junction Temperature|150|°C|
|TSTG|Storage Temperature|- 65 ~ 150|°C|



## **Electrical Characteristics** TC=25°C unless otherwise noted 

|**Electrical**|**Characteristics**TC=25°C unle|ss otherwise noted|||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Condition**|**Min.**<br>**M**|**ax.**<br>**Units**|
|BVCEO|Collector-Emitter Breakdown Voltage|IC = - 1mA, IB= 0|-300|V|
|ICBO|Collector Cut-off Current|VCB= - 300V, IE= 0|-|100<br>µA|
|IEBO|Emitter Cut-off Current|VBE= - 3V, IC = 0|-|100<br>µA|
|hFE|DC Current Gain|VCE= - 10V, IC = - 50mA|30<br>|240|



©2001 Fairchild Semiconductor Corporation 

Rev. A1, February 2001 

## **Typical Characteristics** 

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**----- Start of picture text -----**<br>
1000 -10<br>VCE = 10V IC = 10IB<br>100 -1 VBE(sat)<br>VCE(sat)<br>10 -0.1<br>1 -0.01<br>-1 -10 -100 -1000 -1 -10 -100 -1000<br>IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT<br>Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage<br>                 Collector-Emitter Saturation Voltage<br>-10000 25<br>20<br>-1000<br>15<br>10<br>-100<br>5<br>-10 0<br>-10 -100 -1000 0 25 50 75 100 125 150 175<br>VCE[V], COLLECTOR-EMITTER VOLTAGE TC[oC], CASE TEMPERATURE<br>Figure 3. Safe Operating Area Figure 4. Power Derating<br>DC<br>500µs<br>1ms 100µs<br>(sat)[V], SATURATION VOLTAGE<br>, DC CURRENT GAIN CE<br>FE<br>h<br>(sat), V<br>BE<br>V<br>[A], COLLECTOR CURRENTIC [W], POWER DISSIPATIONPC<br>**----- End of picture text -----**<br>


©2001 Fairchild Semiconductor Corporation 

Rev. A1, February 2001 

## **Package Demensions** 

**==> picture [289 x 402] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-126<br>8.00 ±0.30 3.25 ±0.20<br>ø3.20 ±0.10<br>(1.00) (0.50)<br>0.75 ±0.10<br>1.75 ±0.20<br>1.60 ±0.10<br>0.75 ±0.10<br>#1<br>2.28TYP 2.28TYP 0.50 [+0.10] –0.05<br>[2.28±0.20] [2.28±0.20]<br>0.10<br>±<br>3.90<br>0.20<br>±<br>14.20MAX 11.00<br>0.20<br>0.30 ±<br>±<br>16.10<br>13.06<br>**----- End of picture text -----**<br>


Dimensions in Millimeters 

©2001 Fairchild Semiconductor Corporation 

Rev. A1, February 2001 

## **TRADEMARKS** 

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 

|ACEx™|FASTr™|PowerTrench®|SyncFET™|
|---|---|---|---|
|Bottomless™|GlobalOptoisolator™|QFET™|TinyLogic™|
|CoolFET™|GTO™|QS™|VCX™|
|CROSSVOLT™|HiSeC™|QT Optoelectronics™|UHC™|
|DOME™|ISOPLANAR™|Quiet Series™||
|E2CMOS™|MICROWIRE™|LILENT SWITCHER®||
|EnSigna™|OPTOLOGIC™|SMART START™||
|FACT™|OPTOPLANAR™|SuperSOT™-3||
|FACT Quiet Series™<br>FAST®|PACMAN™<br>POP™|SuperSOT™-6<br>SuperSOT™-8||



## **DISCLAIMER** 

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 

## **LIFE SUPPORT POLICY** 

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. 

As used herein: 

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 

## **PRODUCT STATUS DEFINITIONS** 

## **Definition of Terms** 

|**Datasheet Identification**|**Product Status**|**Definition**|
|---|---|---|
|Advance Information|Formative or In<br>Design|This datasheet contains the design specifications for<br>product development. Specifications may change in<br>any manner without notice.|
|Preliminary|First Production|This datasheet contains preliminary data, and<br>supplementary data will be published at a later date.<br>Fairchild Semiconductor reserves the right to make<br>changes at any time without notice in order to improve<br>design.|
|No Identification Needed|Full Production|This datasheet contains final specifications. Fairchild<br>Semiconductor reserves the right to make changes at<br>any time without notice in order to improve design.|
|Obsolete|Not In Production|This datasheet contains specifications on a product<br>that has been discontinued by Fairchild semiconductor.<br>The datasheet is printed for reference information only.|



©2001 Fairchild Semiconductor Corporation 

Rev. G 



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