# Bipolar - RF Transistor, NPN, 200 V, 15 MHz, 20 W, 500 mA, TO-225 ![Product image](https://novapart.co/image/farnell:2845413/) **URL**: https://novapart.co/products/MJE344G/bipolar-rf-transistor-npn-200-v-15-mhz-20-w-500-ma **SKU**: MJE344G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar RF Transistors **Price**: €0.1930 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Power Dissipation | 20W | | Rf Transistor Case | TO-225 | | Dc Current Gain Hfe | 15hFE | | Transistor Mounting | Through Hole | | Transistor Polarity | NPN | | Dc Collector Current | 500mA | | Power Dissipation Pd | 20W | | Transition Frequency | 15MHz | | Transistor Case Style | TO-225 | | Dc Current Gain Hfe Min | 15hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 500mA | | Collector Emitter Voltage Max | 200V | | Collector Emitter Voltage V(Br)Ceo | 200V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2845413/) ## MJE344G ## Plastic NPN Silicon Medium-Power Transistor This device is useful for medium voltage applications requiring high fT such as converters and extended range amplifiers. ## **Features** **http://onsemi.com** - These Devices are Pb−Free and are RoHS Compliant* **==> picture [475 x 278] intentionally omitted <==** **----- Start of picture text -----**
0.5 AMPERE
POWER TRANSISTORS
MAXIMUM RATINGS
NPN SILICON
Rating Symbol Value Unit
150−200 VOLTS, 20 WATTS
Collector−Emitter Voltage VCEO 200 Vdc
Collector−Base Voltage VCB 200 Vdc
COLLECTOR
Emitter Base Voltage VEB 5.0 Vdc 2, 4
Collector Current − Continuous IC 500 mAdc
Base Current IB 250 mAdc
3
Total Power Dissipation PD BASE
@ TC = 25 C 20 W
Derate above 25 C 0.16 mW/ C
1
Operating and Storage Junction TJ, Tstg –65 to +150 C EMITTER
Temperature Range
=i:
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
TO−225
THERMAL CHARACTERISTICS
CASE 77−09
Characteristic Symbol Max Unit STYLE 1
Thermal Resistance, Junction−to−Case JC 6.25 C/W 1 P
2 3
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## **MARKING DIAGRAM** **==> picture [101 x 81] intentionally omitted <==** **----- Start of picture text -----**
YWW
JE344G
Y = Year
WW = Work Week
JE344 = Device Code
G = Pb−Free Package
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ORDERING INFORMATION
Device Package Shipping
MJE344G TO−225 500 Units/Box
(Pb−Free)
Tr
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*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **MJE344/D** **1** © Semiconductor Components Industries, LLC, 2013 **December, 2013 − Rev. 4** **MJE344G** **ELECTRICAL CHARACTERISTICS** (TC = 25 � C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||| |Collector−Emitter Sustaining Voltage (IC= 1.0 mAdc, IB= 0)|VCEO(sus)|200|−|Vdc| |Collector Cutoff Current (VCE= 200 Vdc, IB= 0)|ICEO|−|1.0|mAdc| |Collector Cutoff Current (VCB= 200 Vdc, IE= 0)|ICBO|−|0.1|mAdc| |Emitter Cutoff Current (VEB= 5.0 Vdc, IC= 0)|IEBO|−|0.1|mAdc| |**ON CHARACTERISTICS**||||| |DC Current Gain (IC= 50 mAdc, VCE= 10 Vdc)|hFE|30|300|−| |Collector−Emitter Saturation Voltage (IC= 50 mAdc, IB= 5.0 mAdc)|VCE(sat)|−|1.0|Vdc| |Base−Emitter On Voltage (IC= 50 mAdc, VCE= 10 Vdc)|VBE(on)|−|1.0|Vdc| |**DYNAMIC CHARACTERISTICS**||||| |Current−Gain − Bandwidth Product (IC= 50 mAdc, VCE= 25 Vdc, f = 10 MHz)|fT|15|−|MHz| |Output Capacitance (VCB= 20 Vdc, IE= 0, f = 100 kHz)|Cob|−|15|pF| |Small−Signal Current Gain (IC= 50 mAdc, VCE= 10 Vdc, f = 1.0 kHz)|hfe|25|−|−| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **==> picture [489 x 380] intentionally omitted <==** **----- Start of picture text -----**
1.0 There are two limitations on the power handling ability of
500��s a transistor: average junction temperature and second
0.5
breakdown. Safe operating area curves indicate IC − VC − V− VCE
ALL
1.0�ms limits of the transistor that must be observed for reliable
0.2 TJ = 150°C ALL operation; i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.
0.1 dc The data of Figure 1 is based on TJ(pk) = 150�C; TCJ(pk) = 150�C; TC = 150�C; TC�C; TCC; TCC is
variable depending on conditions. Second breakdown pulse
0.05
limits are valid for duty cycles to 10% provided TJ(pk)
SECOND BREAKDOWN LIMITBONDING WIRE LIMIT ≤ 150�C. At high case temperatures, thermal limitations 150�C. At high case temperatures, thermal limitations�C. At high case temperatures, thermal limitationsC. At high case temperatures, thermal limitations
0.02 THERMAL LIMIT TC = 25°C will reduce the power that can be handled to values less then
the limitations imposed by second breakdown.
0.01
10 20 30 40 60 100 200 300
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region Safe Operating Area
300 1.0
VCE = 2.0 V
200 VCE = 10 V
TJ = +150°C 0.8 VBE(sat) @ IC/IB = 10
100 +100°C
70 0.6 VBE @ VCE = 10 V
+�25°C
50
0.4
30 -�55°C
VCE(sat) @ IC/IB = 10
20 0.2 TJ = +�25°C
IC/IB = 5.0
10 0
1.0 2.0 3.0 5.0 7.0 10 20 50 70 100 200 300 500 10 20 30 50 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (AMP)
VOLTAGE (VOLTS)
hFE, CURRENT GAIN
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There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VC − V− VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation then the curves indicate. The data of Figure 1 is based on TJ(pk) = 150�C; TCJ(pk) = 150�C; TC = 150�C; TC�C; TCC; TCC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150�C. At high case temperatures, thermal limitations 150�C. At high case temperatures, thermal limitations�C. At high case temperatures, thermal limitationsC. At high case temperatures, thermal limitations will reduce the power that can be handled to values less then the limitations imposed by second breakdown. **Figure 3. “On” Voltages** **Figure 2. DC Current Gain** **http://onsemi.com** **2** **MJE344G** **==> picture [472 x 423] intentionally omitted <==** **----- Start of picture text -----**
PACKAGE DIMENSIONS
TO−225
CASE 77−09
4 ISSUE AC
1 3
2 3 2 1
FRONT VIEW BACK VIEW
E NOTES:
1. DIMENSIONING AND TOLERANCING PER
A1 ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
Q A 3. NUMBER AND SHAPE OF LUGS OPTIONAL.
PIN 4 MILLIMETERS
BACKSIDE TAB DIM MIN MAX
A 2.40 3.00
A1 1.00 1.50
b 0.60 0.90
D b2 0.51 0.88
P c 0.39 0.63
D 10.60 11.10
E 7.40 7.80
1 2 3
e 2.04 2.54
L 14.50 16.63
L1 1.27 2.54
P 2.90 3.30
L1 Q 3.80 4.20
STYLE 1:
L PIN 1.2., 4. EMITTERCOLLECTOR
3. BASE
Oh#
2X b2
2X e
| b c a l
FRONT VIEW SIDE VIEW
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