# Bipolar (BJT) Single Transistor, NPN, 350 V, 300 mA, 15 W, TO-225, Through Hole ![Product image](https://novapart.co/image/farnell:2845311/) **URL**: https://novapart.co/products/MJE3439G/bipolar-bjt-single-transistor-npn-350-v-300-ma-15 **SKU**: MJE3439G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.2080 **Stock**: 500+ **Lead Time**: 2 days (indicative) ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Power Dissipation | 15W | | Dc Current Gain Hfe | 15hFE | | Transistor Mounting | Through Hole | | Transistor Polarity | NPN | | Transition Frequency | 15MHz | | Transistor Case Style | TO-225 | | Dc Current Gain Hfe Min | 15hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 300mA | | Collector Emitter Voltage Max | 350V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2845311/) ## MJE3439G ## NPN Silicon High-Voltage Power Transistor This device is designed for use in line−operated equipment requiring high fT. ## **Features** ## **http://onsemi.com** - High DC Current Gain - High Current−Gain − Bandwidth Product - Low Output Capacitance - These Devices are Pb−Free and are RoHS Compliant* ## **0.3 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS, 15 WATTS** **MAXIMUM RATINGS** COLLECTOR **Rating Symbol Value Unit** 2, 4 Collector−Emitter Voltage VCEO 350 Vdc Collector−Base Voltage VCB 450 Vdc 3 Emitter−Base Voltage VEB 5.0 Vdc BASE Collector Current − Continuous IC 0.3 Adc Base Current IB 150 mAdc 1 EMITTER Total Power Dissipation PD @ TC = 25 C 15 W Derate above 25 C 0.12 mW/ C Operating and Storage Junction TJ, Tstg –65 to +150 C Temperature Range ~~oes~~ **TO−225** Stresses exceeding those listed in the Maximum Ratings table may damage the **CASE 77−09** device. If any of these limits are exceeded, device functionality should not be **STYLE 1** assumed, damage may occur and reliability may be affected. ~~ee eee~~ 1 ‘ **THERMAL CHARACTERISTICS** 2 3 **Characteristic Symbol Max Unit** ~~Oo~~ Thermal Resistance, Junction−to−Case JC 8.33 C/W **MARKING DIAGRAM** **==> picture [101 x 82] intentionally omitted <==** **----- Start of picture text -----**
YWW
E3439G
Y = Year
WW = Work Week
E3439 = Device Code
G = Pb−Free Package
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**ORDERING INFORMATION Device Package Shipping** MJE3439G TO−225 500 Units/Box (Pb−Free) ~~fT~~ - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **MJE3439/D** **1** © Semiconductor Components Industries, LLC, 2013 **December, 2013 − Rev. 13** ## **MJE3439G** ## **ELECTRICAL CHARACTERISTICS** (TC = 25 � C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||| |Collector−Emitter Sustaining Voltage
(IC= 5.0 mAdc, IB= 0)|VCEO(sus)|350|−|Vdc| |Collector Cutoff Current
(VCE= 300 Vdc, IB= 0)|ICEO|−|20|�Adc| |Collector Cutoff Current
(VCE= 450 Vdc, VEB(off)= 1.5 Vdc)|ICEX|−|500|�Adc| |Collector Cutoff Current
(VCB= 350 Vdc, IE= 0)|ICBO|−|20|�Adc| |Emitter Cutoff Current
(VBE= 5.0 Vdc, IC= 0)|IEBO|−|20|�Adc| |**ON CHARACTERISTICS**||||| |DC Current Gain
(IC= 2.0 mAdc, VCE= 10 Vdc)
(IC= 20 mAdc, VCE= 10 Vdc)|hFE|30
15|−
200|−| |Collector−Emitter Saturation Voltage
(IC= 50 mAdc, IB= 4.0 mAdc)|VCE(sat)|−|0.5|Vdc| |Base−Emitter Saturation Voltage
(IC= 50 mAdc, IB= 4.0 mAdc)|VBE(sat)|−|1.3|Vdc| |Base−Emitter On Voltage
(IC= 50 mAdc, VCE= 10 Vdc)|VBE(on)|−|0.8|Vdc| |**DYNAMIC CHARACTERISTICS**||||| |Current−Gain − Bandwidth Product
(IC= 10 mAdc, VCE= 10 Vdc, f = 5.0 MHz)|fT|15|−|MHz| |Output Capacitance
(VCB= 10 Vdc, IE= 0, f = 1.0 MHz)|Cob|−|10|pF| |Small−Signal Current Gain
(IC= 5.0 mAdc, VCE= 10 Vdc, f = 1.0 kHz)|hfe|25|−|−| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **http://onsemi.com** **2** **MJE3439G** **==> picture [239 x 410] intentionally omitted <==** **----- Start of picture text -----**
16
14
12
10
8.0
6.0
4.0
2.0
0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 1. Power−Temperature Derating Curve
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.007
0.005
0.003
0.002 MJE3439
0.001
1.0 2.0 3.0 5.0 7.010 20 30 50 70 100 200 300 500 1000
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
PD, POWER DISSIPATION (WATTS)
IC, COLLECTOR CURRENT (AMP)
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**Figure 2. Active−Region Safe Operating Area** The Safe Operating Area Curves indicate IC − VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below the maximum TJ, power−temperature derating must be observed for both steady state and pulse power conditions. **http://onsemi.com** **3** **MJE3439G** **==> picture [472 x 423] intentionally omitted <==** **----- Start of picture text -----**
PACKAGE DIMENSIONS
TO−225
CASE 77−09
4 ISSUE AC
1 3
2 3 2 1
FRONT VIEW BACK VIEW
E NOTES:
1. DIMENSIONING AND TOLERANCING PER
A1 ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
Q A 3. NUMBER AND SHAPE OF LUGS OPTIONAL.
PIN 4 MILLIMETERS
BACKSIDE TAB DIM MIN MAX
A 2.40 3.00
A1 1.00 1.50
b 0.60 0.90
D b2 0.51 0.88
P c 0.39 0.63
D 10.60 11.10
E 7.40 7.80
1 2 3
e 2.04 2.54
L 14.50 16.63
L1 1.27 2.54
P 2.90 3.30
L1 Q 3.80 4.20
STYLE 1:
L PIN 1.2., 4. EMITTERCOLLECTOR
3. BASE
Oh#
2X b2
2X e
| b c a l
FRONT VIEW SIDE VIEW
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