# Bipolar (BJT) Single Transistor, NPN, 60 V, 10 A, 75 W, TO-220, Through Hole ![Product image](https://novapart.co/image/farnell:2535636/) **URL**: https://novapart.co/products/MJE3055TG/bipolar-bjt-single-transistor-npn-60-v-10-a-75-w **SKU**: MJE3055TG **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.3140 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:2MHz; Power Dissipation Pd:75W; DC Collector Current:10A; DC Current Gain hFE:5hFE; Transist ## Specifications | Parameter | Value | |---|---| | Msl | - | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | - | | Power Dissipation | 75W | | Transistor Mounting | Through Hole | | Transistor Polarity | NPN | | Transition Frequency | 2MHz | | Transistor Case Style | TO-220 | | Dc Current Gain Hfe Min | 5hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 10A | | Collector Emitter Voltage Max | 60V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2535636/) ## MJE2955T (PNP), MJE3055T (NPN) ## Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. **www.onsemi.com** ## **Features** **10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS** - High Current Gain − Bandwidth Product - These Devices are Pb−Free and are RoHS Compliant* ## **MAXIMUM RATINGS** **==> picture [482 x 223] intentionally omitted <==** **----- Start of picture text -----**
||||||||| |---|---|---|---|---|---|---|---| |Rating|Symbol|Value|Unit| |PNP|NPN| |Collector−Emitter Voltage|VCEO|60|Vdc| |COLLECTOR 2, 4|COLLECTOR 2, 4| |Collector−Base Voltage|VCB|70|Vdc| |Emitter−Base Voltage|VEB|5.0|Vdc| |1|1| |Collector Current|IC|10|Adc| |BASE|BASE| |Base Current|IB|6.0|Adc| |Total Device Dissipation|PD|EMITTER 3|EMITTER 3| |@ TC = 25|°|C|(Note 1)|75|W| |Derate above 25|°|C|0.6|W/|°|C|4| |Operating and Storage Junction|TJ, Tstg|−55 to +150|°|C| |Temperature Range| |»|TO−220| |Stresses exceeding those listed in the Maximum Ratings table may damage the|CASE 221A−09| |device. If any of these limits are exceeded, device functionality should not be|STYLE 1| |assumed, damage may occur and reliability may be affected.| |Safe Area Curves are indicated by Figure 1. Both limits are applicable and| |must be observed.|1 2| |3| |THERMAL CHARACTERISTICS| |MARKING DIAGRAM| **----- End of picture text -----**
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed. ## **THERMAL CHARACTERISTICS** **==> picture [263 x 23] intentionally omitted <==** **----- Start of picture text -----**
||||||| |---|---|---|---|---|---| |Characteristics|Symbol|Max|Unit| |Thermal Resistance, Junction−to−Case|R|JC|1.67|°|C/W| **----- End of picture text -----**
MJExx55T = Device Code ~~=~~ xx = 29 or 30 MJExx55TG G = Pb−Free Package A = Assembly Location AY WW Y = Year WW = Work Week ## **ORDERING INFORMATION** **==> picture [173 x 59] intentionally omitted <==** **----- Start of picture text -----**
|||| |---|---|---| |Device|Package|Shipping| |MJE2955TG|TO−220|50 Units / Rail| |(Pb−Free)| |MJE3055TG|TO−220|50 Units / Rail| |(Pb−Free)| **----- End of picture text -----**
- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **MJE2955T/D** **1** © Semiconductor Components Industries, LLC, 2015 **January, 2015 − Rev. 12** ## **MJE2955T (PNP), MJE3055T (NPN)** ## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||| |Collector−Emitter Sustaining Voltage (Note 2)
(IC= 200 mAdc, IB= 0)|VCEO(sus)|60|−|Vdc| |Collector Cutoff Current
(VCE= 30 Vdc, IB= 0)|ICEO|−|700|�Adc| |Collector Cutoff Current
(VCE= 70 Vdc, VEB(off)= 1.5 Vdc)
(VCE= 70 Vdc, VEB(off)= 1.5 Vdc, TC= 150°C)|ICEX|−
−|1.0
5.0|mAdc| |Collector Cutoff Current
(VCB= 70 Vdc, IE= 0)
(VCB= 70 Vdc, IE= 0, TC= 150°C)|ICBO|−
−|1.0
10|mAdc| |Emitter Cutoff Current
(VBE= 5.0 Vdc, IC= 0)|IEBO|−|5.0|mAdc| |**ON CHARACTERISTICS**||||| |DC Current Gain (Note 2)
(IC= 4.0 Adc, VCE= 4 0 Vdc)
(IC= 10 Adc, VCE= 4.0 Vdc)|hFE|20
5.0|100
−|−| |Collector−Emitter Saturation Voltage (Note 2)
(IC= 4.0 Adc, IB= 0.4 Adc)
(IC= 10 Adc, IB= 3.3 Adc)|VCE(sat)|−
−|1.1
8.0|Vdc| |Base−Emitter On Voltage (Note 2)
(IC= 4.0 Adc, VCE= 4.0 Vdc)|VBE(on)|−|1.8|Vdc| |**DYNAMIC CHARACTERISTICS**||||| |Current−Gain−Bandwidth Product
(IC= 500 mAdc, VCE= 10 Vdc, f = 500 kHz)|fT|2.0|−|MHz| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 20%. **www.onsemi.com** **2** ## **MJE2955T (PNP), MJE3055T (NPN)** **==> picture [231 x 171] intentionally omitted <==** **----- Start of picture text -----**
10
7.0 100�� s
5.0 5.0 ms 1.0�ms
dc
3.0
2.0
1.0
0.7 TJ = 150°C
0.5
SECOND BREAKDOWN LIMITED
0.3 BONDING WIRE LIMITED
THERMALLY LIMITED
0.2
TC = 25°C (D = 0.1)
0.1
5.0 7.0 10 20 30 50 60
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMP)
**----- End of picture text -----**
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 1 is based on TJ(pk) = 150°C. TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. **Figure 1. Active−Region Safe Operating Area** **==> picture [492 x 388] intentionally omitted <==** **----- Start of picture text -----**
500 90
300 VCE = 2.0 V 80
200 TJ = 150°C 70
100 60
25°C
50
50
-�55°C 40 MJE3055T
30 MJE2955T
20 30
20
10
10
5.0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 0 25 50 75 100 125 150 175
IC, COLLECTOR CURRENT (AMP) TC, CASE TEMPERATURE (°C)
Figure 2. DC Current Gain Figure 3. Power Derating
MJE2955T MJE3055T
2.0 1.4
TJ = 25°C 1.2 TJ = 25°C
1.6
1.0
1.2
0.8 VBE(sat) @ IC/IB = 10
0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V
VBE @ VCE = 3.0 V 0.4
0.4
0.2
VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10
0 0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN
PD, POWER DISSIPATION (WATTS)
V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS)
**----- End of picture text -----**
**Figure 4. “On” Voltages** **www.onsemi.com** **3** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **TO−220** CASE 221A−09 ISSUE AJ DATE 05 NOV 2019 **==> picture [34 x 7] intentionally omitted <==** **----- Start of picture text -----**
SCALE 1:1
**----- End of picture text -----**
**==> picture [338 x 122] intentionally omitted <==** **----- Start of picture text -----**
STYLE 1: STYLE 2: STYLE 3: STYLE 4:
PIN 1. BASE PIN 1. BASE PIN 1. CATHODE PIN 1. MAIN TERMINAL 1
2. COLLECTOR 2. EMITTER 2. ANODE 2. MAIN TERMINAL 2
3. EMITTER 3. COLLECTOR 3. GATE 3. GATE
4. COLLECTOR 4. EMITTER 4. ANODE 4. MAIN TERMINAL 2
STYLE 5: STYLE 6: STYLE 7: STYLE 8:
PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE
2. DRAIN 2. CATHODE 2. ANODE 2. ANODE
3. SOURCE 3. ANODE 3. CATHODE 3. EXTERNAL TRIP/DELAY
4. DRAIN 4. CATHODE 4. ANODE 4. ANODE
STYLE 9: STYLE 10: STYLE 11: STYLE 12:
PIN 1. GATE PIN 1. GATE PIN 1. DRAIN PIN 1. MAIN TERMINAL 1
2. COLLECTOR 2. SOURCE 2. SOURCE 2. MAIN TERMINAL 2
3. EMITTER 3. DRAIN 3. GATE 3. GATE
4. COLLECTOR 4. SOURCE 4. SOURCE 4. NOT CONNECTED
**----- End of picture text -----**
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