# Bipolar (BJT) Single Transistor, Audio, NPN, 100 V, 4 A, 15 W, TO-225, Through Hole

![Product image](https://novapart.co/image/farnell:1459088/)

**URL**: https://novapart.co/products/MJE243G/bipolar-bjt-single-transistor-audio-npn-100-v-4-a
**SKU**: MJE243G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.2560
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:40MHz; Power Dissipation Pd:15W; DC Collector Current:4A; DC Current Gain hFE:40hFE; Transisto

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 15W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | 40MHz |
| Transistor Case Style | TO-225 |
| Dc Current Gain Hfe Min | 40hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 4A |
| Collector Emitter Voltage Max | 100V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1459088/)

## MJE243G (NPN), 

## Complementary Silicon Power Plastic Transistors 

These devices are designed for low power audio amplifier and low−current, high−speed switching applications. 

## **Features** 

- High Collector−Emitter Sustaining Voltage 

- High DC Current Gain 

- Low Collector−Emitter Saturation Voltage 

- High Current Gain Bandwidth Product 

## **http://onsemi.com** 

**4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS** 

- Annular Construction for Low Leakages 

- These Devices are Pb−Free and are RoHS Compliant* 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**<br>~~PO~~|**Symbol**|**Value**|**Unit**|
|Collector−Emitter Voltage<br>~~PO~~<br>~~—“‘“‘“aE~~|VCEO<br>~~—“‘“‘“aE~~|100<br>~~—“‘“‘“aE~~|Vdc<br>~~—“‘“‘“aE~~|
|Collector−Base Voltage<br>~~PO~~<br>~~es~~<br>~~a~~|VCB<br>~~es~~<br>~~a~~|100<br>~~es~~<br>~~a~~|Vdc<br>~~es~~<br>~~a~~|
|Emitter−Base Voltage<br>~~a~~|VEB<br>~~a~~|7.0<br>~~a~~|Vdc<br>~~a~~|
|Collector Current − Continuous<br>~~se~~|IC<br>~~se~~|4.0<br>~~se~~|Adc<br>~~se~~|
|Collector Current − Peak<br>~~se~~|ICM<br>~~se~~<br>~~ee~~|8.0<br>~~se~~<br>~~ee~~|Adc<br>~~se~~<br>~~ee~~|
|Base Current<br>~~a~~|IB<br>~~a~~<br>~~ee~~|1.0<br>~~a~~<br>~~ee~~|Adc<br>~~a~~<br>~~ee~~|
|Total Power Dissipation<br>@ TC= 25 C<br>Derate above 25 C<br>~~a~~|PD<br>~~a~~<br>~~ee~~|15<br>120<br>~~a~~<br>~~ee~~|W<br>mW/ C<br>~~a~~<br>~~ee~~|
|Total Power Dissipation<br>@ TA= 25 C<br>Derate above 25 C<br>~~a~~|PD<br>~~ee~~<br>~~a~~<br>~~ee~~|1.5<br>12<br>~~ee~~<br>~~a~~<br>~~ee~~|W<br>mW/ C<br>~~ee~~<br>~~a~~<br>~~ee~~|
|Operating and Storage Junction<br>Temperature Range<br>~~ee~~|TJ, Tstg<br>~~ee~~<br>~~ee~~|–65 to +150<br>~~ee~~<br>~~ee~~|C<br>~~ee~~<br>~~ee~~|



## **THERMAL CHARACTERISTICS** 

~~a~~ **Characteristic Symbol Max Unit** ~~ee~~ Thermal Resistance, Junction−to−Case R JC 8.34 C/W ~~a~~ Thermal Resistance, Junction−to−Ambient ~~Oe~~ R JA 83.4 C/W 

**==> picture [159 x 88] intentionally omitted <==**

**----- Start of picture text -----**<br>
PNP NPN<br>COLLECTOR 2, 4 COLLECTOR 2, 4<br>3 3<br>BASE BASE<br>EMITTER 1 EMITTER 1<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
TO−225<br>CASE 77−09<br>STYLE 1<br>1 fp<br>2 3<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

YWW JE2x3G Y = Year WW = Work Week JE2x3 = Device Code x = 4 or 5 G = Pb−Free Package 

## **ORDERING INFORMATION** 

- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

|**Device**|**Package**|**Shipping**||
|---|---|---|---|
|MJE243G|TO−225<br>(Pb−Free)|500 Units/Box||
|MJE253G|TO−225<br>(Pb−Free)|500 Units/Box||



Publication Order Number: **MJE243/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **July, 2014 − Rev. 16** 

## **MJE243G (NPN), MJE253G (PNP)** 

## **ELECTRICAL CHARACTERISTICS** (TC = 25 � C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Collector−Emitter Sustaining Voltage<br>(IC= 10 mAdc, IB= 0)|VCEO(sus)|100|−|V|
|Collector Cutoff Current<br>(VCB= 100 Vdc, IE= 0)<br>(VCE= 100 Vdc, IE= 0, TC= 125�C)|ICBO|−<br>−|0.1<br>0.1|�A<br>mA|
|Emitter Cutoff Current<br>(VBE= 7.0 Vdc, IC= 0)|IEBO|−|0.1|�Adc|
|**ON CHARACTERISTICS**|||||
|DC Current Gain<br>(IC= 200 mAdc, VCE= 1.0 Vdc)<br>(IC= 1.0 Adc, VCE= 1.0 Vdc)|hFE|40<br>15|180<br>−|−|
|Collector−Emitter Saturation Voltage<br>(IC= 500 mAdc, IB= 50 mAdc)<br>(IC= 1.0 Adc, IB= 100 mAdc)|VCE(sat)|−<br>−|0.3<br>0.6|V|
|Base−Emitter Saturation Voltage<br>(IC= 2.0 Adc, IB= 200 mAdc)|VBE(sat)|−|1.8|V|
|Base−Emitter On Voltage<br>(IC= 500 mAdc, VCE= 1.0 Vdc)|VBE(on)|−|1.5|V|
|**DYNAMIC CHARACTERISTICS**|||||
|Current−Gain − Bandwidth Product<br>(IC= 100 mAdc, VCE= 10 Vdc, ftest= 10 MHz)|fT|40|−|MHz|
|Output Capacitance<br>(VCB= 10 Vdc, IE= 0, f = 0.1 MHz)|Cob|−|50|pF|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

**http://onsemi.com** 

**2** 

**MJE243G (NPN), MJE253G (PNP)** 

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**----- Start of picture text -----**<br>
16 1.6<br>12 1.2<br>8.0 0.8<br>4.0 0.4<br>0 0<br>20 40 60 80 100 120 140 160<br>T, TEMPERATURE (°C)<br>Figure 1. Power Derating<br>VCC<br>+�30 V<br>1K<br>500<br>RC 300 tr<br>25 �s 200<br>+11 V RB SCOPE<br>100<br>0<br>50<br>-�9.0 V 51 D1 30<br>20<br>DUTY CYCLE = 1.0%tr, tf ≤ 10 ns -�4 V 10 td IVCCC/IB = 30 V = 10<br>RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS 53 NPN MJE243 TJ = 25°C<br>�D1 MUST BE FAST RECOVERY TYPE, e.g.: 2 PNP MJE253<br>��1N5825 USED ABOVE IB ≈ 100 mA<br>��MSD6100 USED BELOW IB ≈ 100 mA 10.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10<br>FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES<br>IC, COLLECTOR CURRENT (AMPS)<br>Figure 2. Switching Time Test Circuit Figure 3. Turn−On Time<br>1.0<br>0.7<br>D = 0.5<br>0.5<br>0.3 0.2<br>0.2 0.1<br>0.05 �JC(t) = r(t) �JC P(pk)<br>0.1 �JC = 8.34°C/W MAX<br>0.07 0.02 D CURVES APPLY FOR POWER<br>0.05 0.01 PULSE TRAIN SHOWN t 1<br>0.03 READ TIME AT t1 t 2<br>0.02 0 (SINGLE PULSE) TJ(pk) - TC = P(pk) �JC(t) DUTY CYCLE, D = t1/t2<br>0.01<br>0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200<br>t, TIME (ms)<br>TC TA<br>PD, POWER DISSIPATION (WATTS) PD, POWER DISSIPATION (WATTS)<br>t, TIME (ns)<br>(NORMALIZED)<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 4. Thermal Response** 

**http://onsemi.com** 

**3** 

## **MJE243G (NPN), MJE253G (PNP)** 

**==> picture [231 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>100��s<br>5.0 500��s<br>2.0 1.0�ms<br>1.0 dc<br>TJ = 150°C<br>0.5<br>BONDING WIRE LIMITED<br>0.2 THERMALLY LIMITED @ 5.0�ms<br>TC = 25°C (SINGLE PULSE)<br>0.1 SECOND BREAKDOWN LIMITED<br>0.05 CURVES APPLY BELOW<br>�RATED VCEO<br>0.02<br>MJE243/MJE253<br>0.01<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>IC, COLLECTOR CURRENT (AMP)<br>**----- End of picture text -----**<br>


There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 

The data of Figure 5 is based on TJ(pk) = 150�C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150�C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 

**Figure 5. Active Region Safe Operating Area** 

**==> picture [237 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
10K<br>5K VCC = 30 V<br>3K ts IC/IB = 10<br>2K IB1 = IB2<br>1K TJ = 25°C<br>500<br>300<br>200<br>100<br>50<br>3020 tf NPN MJE243<br>PNP MJE253<br>10<br>0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10<br>IC, COLLECTOR CURRENT (AMPS)<br>t, TIME (ns)<br>**----- End of picture text -----**<br>


**Figure 6. Turn−Off Time** 

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**----- Start of picture text -----**<br>
200<br>TJ = 25°C<br>100<br>Cib<br>70<br>50<br>30<br>20 Cob<br>MJE243 (NPN)<br>MJE253 (PNP)<br>10<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 7. Capacitance** 

**http://onsemi.com** 

**4** 

**MJE243G (NPN), MJE253G (PNP)** 

**==> picture [34 x 19] intentionally omitted <==**

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NPN<br>MJE243<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
PNP<br>MJE253<br>**----- End of picture text -----**<br>


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500 200<br>300 TJ = 150°C VCE = 1.0 V TJ = 150°C VCE = 1.0 V<br>200 VCE = 2.0 V 10070 25°C VCE = 2.0 V<br>25°C<br>50<br>100<br>70 -�55°C 30 -�55°C<br>50 20<br>30<br>10<br>20<br>7.0<br>5.0<br>10<br>7.0 3.0<br>5.0 2.0<br>0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0<br>IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)<br>Figure 8. DC Current Gain<br>1.4 1.4<br>TJ = 25°C TJ = 25°C<br>1.2 1.2<br>1.0 1.0<br>VBE(sat) @ IC/IB = 10<br>0.8 VBE(sat) @ IC/IB = 10 0.8<br>0.6 VBE @ VCE = 1.0 V 0.6 VBE @ VCE = 1.0 V<br>0.4 IC/IB = 10 0.4 IC/IB = 10<br>5.0<br>5.0<br>0.2 0.2<br>VCE(sat) VCE(sat)<br>0 0<br>0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0<br>IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)<br>Figure 9. “On” Voltages<br>+�2.5 +�2.5<br>+�2.0 *APPLIES FOR IC/IB ≤ hFE/3 +�2.0 *APPLIES FOR IC/IB ≤ hFE/3<br>+�1.5 +�1.5<br>+�1.0 +�1.0 25°C to 150°C<br>+�0.5 *�VC FOR VCE(sat) 25°C to 150°C +�0.5 *�VC FOR VCE(sat)<br>0 0<br>-�55°C to 25°C -�55°C to 25°C<br>-�0.5 -�0.5<br>-�1.0 25°C to 150°C -�1.0 25°C to 150°C<br>-�1.5 -�1.5<br>-�2.0 �VB FOR VBE -�55°C to 25°C -�2.0 �VB FOR VBE -�55°C to 25°C<br>-�2.5 -�2.5<br>0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0<br>IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)<br>hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN<br>V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS)<br>C)° C)°<br>V, TEMPERATURE COEFFICIENTS (mV/ V, TEMPERATURE COEFFICIENTS (mV/<br>θ θ<br>**----- End of picture text -----**<br>


**Figure 10. Temperature Coefficients** 

**http://onsemi.com** 

**5** 

**MJE243G (NPN), MJE253G (PNP)** 

## **PACKAGE DIMENSIONS** 

**==> picture [472 x 388] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO−225<br>CASE 77−09<br>4 ISSUE AC<br>1 3<br>2 3 2 1<br>FRONT VIEW BACK VIEW<br>E NOTES:<br>1. DIMENSIONING AND TOLERANCING PER<br>A1 ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>Q A 3. NUMBER AND SHAPE OF LUGS OPTIONAL.<br>PIN 4 MILLIMETERS<br>BACKSIDE TAB DIM MIN MAX<br>A 2.40 3.00<br>A1 1.00 1.50<br>b 0.60 0.90<br>D b2 0.51 0.88<br>P c 0.39 0.63<br>D 10.60 11.10<br>E 7.40 7.80<br>1 2 3<br>e 2.04 2.54<br>L 14.50 16.63<br>L1 1.27 2.54<br>P 2.90 3.30<br>L1 Q 3.80 4.20<br>STYLE 1:<br>L PIN 1.2., 4. EMITTERCOLLECTOR<br>3. BASE<br>2X b2<br>2X e<br>Il b c [<br>FRONT VIEW SIDE VIEW<br>**----- End of picture text -----**<br>


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## **PUBLICATION ORDERING INFORMATION** 

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**MJE243/D** 

**6** 



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