MJE180G

Bipolar (BJT) Single Transistor, NPN, 40 V, 3 A, 12.5 W, TO-225, Through Hole

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:50MHz; Power Dissipation Pd:12.5W; DC Collector Current:3A; DC Current Gain hFE:12hFE; Transistor
MSL: -
SVHC: Lead (25-Jun-2025)
No. of Pins: 3Pins
Product Range: -
Qualification: -
Power Dissipation: 12.5W
Transistor Mounting: Through Hole
Transistor Polarity: NPN
Transition Frequency: 50MHz
Transistor Case Style: TO-225
DC Current Gain hFE Min: 12hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 3A
Collector Emitter Voltage Max: 40V

Delivery and price
Units per pack	5000
Price	0.342 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 14, 2026