# Bipolar (BJT) Single Transistor, Audio, NPN, 250 V, 8 A, 50 W, TO-220, Through Hole ![Product image](https://novapart.co/image/farnell:9556621/) **URL**: https://novapart.co/products/MJE15032G/bipolar-bjt-single-transistor-audio-npn-250-v-8-a **SKU**: MJE15032G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.5450 **Stock**: 200+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:250V; Transition Frequency ft:30MHz; Power Dissipation Pd:50W; DC Collector Current:8A; DC Current Gain hFE:70hFE; Transistor Case Styl ## Specifications | Parameter | Value | |---|---| | Msl | - | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | - | | Power Dissipation | 50W | | Transistor Mounting | Through Hole | | Transistor Polarity | NPN | | Transition Frequency | 30MHz | | Transistor Case Style | TO-220 | | Dc Current Gain Hfe Min | 70hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 8A | | Collector Emitter Voltage Max | 250V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:9556621/) ## MJE15032 (NPN), MJE15033 (PNP) ## Complementary Silicon Plastic Power Transistors Designed for use as high−frequency drivers in audio amplifiers. ## **Features** **http://onsemi.com** - High DC Current Gain - High Current Gain − Bandwidth Product - TO−220 Compact Package - Epoxy Meets UL 94 V−0 @ 0.125 in - These Devices are Pb−Free and are RoHS Compliant* ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Collector−Emitter Voltage|VCEO|250|Vdc| |Collector−Base Voltage|VCB|250|Vdc| |Emitter−Base Voltage|VEB|5.0|Vdc| |Collector Current − Continuous|IC|8.0|Adc| |Collector Current − Peak|ICM|16|Adc| |Base Current|IB|2.0|Adc| |Total Power Dissipation
@ TC= 25 C
Derate above 25 C
~~eo~~
~~+H~~|PD
~~eo~~
~~+H~~|50
0.40
~~eo~~
~~+H~~|W
W/ C
~~eo~~
~~+H~~| |Total Power Dissipation
@ TA= 25 C
Derate above 25 C
~~eo~~
~~+H~~|PD
~~eo~~
~~+H~~|2.0
0.016
~~eo~~
~~+H~~|W
W/ C
~~eo~~
~~+H~~| |Operating and Storage Junction
Temperature Range
~~+H~~|TJ, Tstg
~~+H~~|–65 to +150
~~+H~~|C
~~+H~~| |ESD − Human Body Model
~~+H~~
~~——~~|HBM
~~+H~~
~~——~~|3B
~~+H~~
~~——~~|V
~~+H~~
~~——~~| |ESD − Machine Model
~~——~~|MM
~~——~~|C
~~——~~|V
~~——~~| ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Thermal Resistance,
Junction−to−Case|R JC|2.5|C/W| |Thermal Resistance,
Junction−to−Ambient|R JA|62.5|C/W| - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ## **8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS** ## **COMPLEMENTARY** **==> picture [192 x 436] intentionally omitted <==** **----- Start of picture text -----**
COLLECTOR COLLECTOR
2, 4 2, 4
1 1
BASE BASE
=
3 3
EMITTER EMITTER
MARKING
DIAGRAM
4
MJE1503xG
TO−220 AYWW
¢ CASE 221A E
STYLE 1
1
2 3
MJE1503x = Specific Device Code
x = 2 or 3
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device Package Shipping
MJE15032G TO−220 50 Units/Rail
(Pb−Free)
MJE15033G TO−220 50 Units/Rail
(Pb−Free)
==
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Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2014 **December, 2014 − Rev. 6** **MJE15032/D** ## **MJE15032 (NPN), MJE15033 (PNP)** ## **ELECTRICAL CHARACTERISTICS** (TC = 25 � C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise|noted)|||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||| |Collector−Emitter Sustaining Voltage (Note 1)
(IC= 10 mAdc, IB= 0)|VCEO(sus)|250|−|Vdc| |Collector Cutoff Current
(VCB= 250 Vdc, IE= 0)|ICBO|−|10|�Adc| |Emitter Cutoff Current
(VBE= 5.0 Vdc, IC= 0)|IEBO|−|10|�Adc| |**ON CHARACTERISTICS**(Note 1)||||| |DC Current Gain
(IC= 0.5 Adc, VCE= 5.0 Vdc)
(IC= 1.0 Adc, VCE= 5.0 Vdc)
(IC= 2.0 Adc, VCE= 5.0 Vdc)|hFE|70
50
10|−
−
−|−| |Collector−Emitter Saturation Voltage
(IC= 1.0 Adc, IB= 0.1 Adc)|VCE(sat)|−|0.5|Vdc| |Base−Emitter On Voltage
(IC= 1.0 Adc, VCE= 5.0 Vdc)|VBE(on)|−|1.0|Vdc| |**DYNAMIC CHARACTERISTICS**||||| |Current Gain − Bandwidth Product (Note 2)
(IC= 500 mAdc, VCE= 10 Vdc, ftest= 1.0 MHz)|fT|30|−|MHz| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2.0%. 2. fT = ⎪ hfe ⎪• ftest. **http://onsemi.com** **2** **MJE15032 (NPN), MJE15033 (PNP)** **==> picture [487 x 397] intentionally omitted <==** **----- Start of picture text -----**
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1 Z�JC(t) = r(t) R�JC P(pk)
0.07 0.05 R�JC = 2.5°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02
0.03 PULSE TRAIN SHOWN t 1
0.02 0.01 SINGLE PULSE READ TIME AT tTJ(pk) - TC = P(pk)1 Z�JC(t) DUTY CYCLE, D = t t2 1 /t 2
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)
Figure 1. Thermal Response
100 There are two limitations on the power handling ability of
a transistor: average junction temperature and second
100 �s breakdown. Safe operating area curves indicate IC − VC − V − VCE
10 limits of the transistor that must be observed for reliable
50�ms
operation, i.e., the transistor must not be subjected to greater
250�ms 10�ms dissipation then the curves indicate.
1.0 The data of Figures 2 and 4 is based on TJ(pk) = 150�J(pk) = 150� = 150��C;
TC is variable depending on conditions. Second breakdownC is variable depending on conditions. Second breakdown is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
0.1 < 150�C. TJ(pk) may be calculated from the data in Figure 1.�C. TJ(pk) may be calculated from the data in Figure 1.C. TJ(pk) may be calculated from the data in Figure 1.J(pk) may be calculated from the data in Figure 1. may be calculated from the data in Figure 1.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
0.011.0 10 100 1000 limitations imposed by second breakdown.
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
IC, COLLECTOR CURRENT (AMPS)
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There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VC − V − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate. The data of Figures 2 and 4 is based on TJ(pk) = 150�J(pk) = 150� = 150��C; TC is variable depending on conditions. Second breakdownC is variable depending on conditions. Second breakdown is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150�C. TJ(pk) may be calculated from the data in Figure 1.�C. TJ(pk) may be calculated from the data in Figure 1.C. TJ(pk) may be calculated from the data in Figure 1.J(pk) may be calculated from the data in Figure 1. may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. **Figure 2. MJE15032 & MJE15033 Safe Operating Area** **==> picture [253 x 171] intentionally omitted <==** **----- Start of picture text -----**
TA TC
3.0 60
2.0 40
T C
1.0 20 TA
0 0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
**----- End of picture text -----**
**Figure 3. Power Derating** **http://onsemi.com** **3** **MJE15032 (NPN), MJE15033 (PNP)** ## **NPN − MJE15032** ## **PNP − MJE15033** **==> picture [255 x 169] intentionally omitted <==** **----- Start of picture text -----**
1000
150°C
25°C
100
-55°C
10
1.0
0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS)
h FE, DC CURRENT GAIN h FE, DC CURRENT GAIN
**----- End of picture text -----**
**Figure 4. NPN − MJE15032 VCE = 5 V DC Current Gain** **==> picture [228 x 169] intentionally omitted <==** **----- Start of picture text -----**
1000
150°C
100 25°C
-55°C
10
1.0
0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS)
**----- End of picture text -----**
**Figure 5. PNP − MJE15033 VCE = 5 V DC Current Gain** **==> picture [239 x 169] intentionally omitted <==** **----- Start of picture text -----**
10
1.0 -55°C°CC
25°C°CC
150°C°CC
0.1
0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS)C, COLLECTOR CURRENT (AMPS), COLLECTOR CURRENT (AMPS)
V, VOLTAGE (VOLTS)
**----- End of picture text -----**
**==> picture [486 x 384] intentionally omitted <==** **----- Start of picture text -----**
10 10
1.0 -55°C 1.0 -55°C°CC
25°C 25°C°CC
150°C 150°C°CC
0.1 0.1
0.1 1.0 10 0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)C, COLLECTOR CURRENT (AMPS), COLLECTOR CURRENT (AMPS)
Figure 6. NPN − MJE15032 Figure 7. PNP − MJE15033
VCE = 5 V VBE(on) Curve VCE = 5 V VBE(on) Curve
10 100
150°C
10
1.0 25°C
25°C
1.0
-55°C -55°C
0.1 150°C
0.1
0.01 0.01
0.1 1.0 10 0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
**----- End of picture text -----**
**==> picture [113 x 22] intentionally omitted <==** **----- Start of picture text -----**
Figure 9. PNP − MJE15033
VCE(sat) IC/IB = 10
**----- End of picture text -----**
**==> picture [113 x 22] intentionally omitted <==** **----- Start of picture text -----**
Figure 8. NPN − MJE15032
VCE(sat) IC/IB = 10
**----- End of picture text -----**
**http://onsemi.com** **4** **MJE15032 (NPN), MJE15033 (PNP)** **NPN − MJE15032** ## **PNP − MJE15033** **==> picture [485 x 387] intentionally omitted <==** **----- Start of picture text -----**
100 100
150°C
10 150°C 10 25°C
-55°C
25°C
1.0 1.0
-55°C
0.1 0.1
0.01 0.01
0.1 1.0 10 0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 10. NPN − MJE15032 Figure 11. PNP − MJE15033
VCE(sat) IC/IB = 20 VCE(sat) IC/IB = 20
10 10
1.0 -55°C 1.0 -55°C
25°C 25°C
150°C 150°C
0.1 0.1
0.1 1.0 10 0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS)
, BASE EMITTER VOLTAGE (VOLTS) , BASE EMITTER VOLTAGE (VOLTS)
BE BE
V V
**----- End of picture text -----**
**Figure 12. NPN − MJE15032 VBE(sat) IC/IB = 10** **Figure 13. PNP − MJE15033 VBE(sat) IC/IB = 10** **http://onsemi.com** **5** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **TO−220** CASE 221A ISSUE AK DATE 13 JAN 2022 **==> picture [34 x 7] intentionally omitted <==** **----- Start of picture text -----**
SCALE 1:1
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**==> picture [338 x 122] intentionally omitted <==** **----- Start of picture text -----**
STYLE 1: STYLE 2: STYLE 3: STYLE 4:
PIN 1. BASE PIN 1. BASE PIN 1. CATHODE PIN 1. MAIN TERMINAL 1
2. COLLECTOR 2. EMITTER 2. ANODE 2. MAIN TERMINAL 2
3. EMITTER 3. COLLECTOR 3. GATE 3. GATE
4. COLLECTOR 4. EMITTER 4. ANODE 4. MAIN TERMINAL 2
STYLE 5: STYLE 6: STYLE 7: STYLE 8:
PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE
2. DRAIN 2. CATHODE 2. ANODE 2. ANODE
3. SOURCE 3. ANODE 3. CATHODE 3. EXTERNAL TRIP/DELAY
4. DRAIN 4. CATHODE 4. ANODE 4. ANODE
STYLE 9: STYLE 10: STYLE 11: STYLE 12:
PIN 1. GATE PIN 1. GATE PIN 1. DRAIN PIN 1. MAIN TERMINAL 1
2. COLLECTOR 2. SOURCE 2. SOURCE 2. MAIN TERMINAL 2
3. EMITTER 3. DRAIN 3. GATE 3. GATE
4. COLLECTOR 4. SOURCE 4. SOURCE 4. NOT CONNECTED
**----- End of picture text -----**
**==> picture [492 x 37] intentionally omitted <==** **----- Start of picture text -----**
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42148B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: TO−220 PAGE 1 OF 1
**----- End of picture text -----**
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