# Bipolar (BJT) Single Transistor, PNP, 350 V, 1 A, 15 W, TO-252 (DPAK), Surface Mount ![Product image](https://novapart.co/image/farnell:2535627/) **URL**: https://novapart.co/products/MJD5731T4G/bipolar-bjt-single-transistor-pnp-350-v-1-a-15-w **SKU**: MJD5731T4G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.2170 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-350V; Transition Frequency ft:10MHz; Power Dissipation Pd:15W; DC Collector Current:-1A; DC Current Gain hFE:10hFE; Transistor Ca ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | MJxxxx | | Qualification | AEC-Q101 | | Power Dissipation | 15W | | Transistor Mounting | Surface Mount | | Transistor Polarity | PNP | | Transition Frequency | 10MHz | | Transistor Case Style | TO-252 (DPAK) | | Dc Current Gain Hfe Min | 10hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 1A | | Collector Emitter Voltage Max | 350V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2535627/) ## MJD5731 ## High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. ## **Features** **http://onsemi.com** - PNP Complements to the MJD47 thru MJD50 Series ## **SILICON POWER TRANSISTORS 1.0 AMPERE 350 VOLTS, 15 WATTS** - Epoxy Meets UL 94 V−0 @ 0.125 in - These Devices are Pb−Free and are RoHS Compliant ## **MAXIMUM RATINGS** |**Rating**|**Symbol**|**Max**|**Unit**| |---|---|---|---| |Collector−Emitter Voltage|VCEO|350|Vdc| |Emitter−Base Voltage|VEB|5|Vdc| |Collector Current − Continuous|IC|1.0|Adc| |Collector Current − Peak|ICM|3.0|Adc| |Total Power Dissipation
@ TC= 25°C
Derate above 25°C|PD|15
0.12|W
W/°C| |Total Power Dissipation (Note 1)
@ TA= 25°C
Derate above 25°C|PD|1.56
0.0125|W
W/°C| |Unclamped Inductive Load Energy
(See Figure 10)|E|20|mJ| |Operating and Storage Junction
Temperature Range|TJ, Tstg|−55 to +150|°C| |ESD − Human Body Model|HBM|3B|V| |ESD − Machine Model|MM|C|V| Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. **==> picture [90 x 8] intentionally omitted <==** **----- Start of picture text -----**
MARKING DIAGRAM
**----- End of picture text -----**
1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. |sizes recommended.
**THERMAL CHARACTERISTICS**
~~oo~~|~~oo~~|~~oo~~|~~oo~~| |---|---|---|---| |**Characteristic**
~~oo~~|**Symbol**
~~oo~~|**Max**
~~oo~~|**Unit**
~~oo~~| |Thermal Resistance, Junction−to−Case
~~oo~~|R JC
~~oo~~|8.33
~~oo~~|°C/W
~~oo~~| |Thermal Resistance, Junction−to−Ambient
(Note 2)|R JA|80|°C/W| |Lead Temperature for Soldering|TL|260|°C| AYWW J 5731G ~~4 |~~ A = Assembly Location Y = Year WW = Work Week J5731 = Device Code G = Pb−Free Package 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. **ORDERING INFORMATION** **Device Package Shipping**[†] MJD5731T4G DPAK 2500/Tape & Reel (Pb−Free) ~~—~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2013 **August, 2013 − Rev. 5** **MJD5731/D** **MJD5731** |**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
**Characteristic**
ÎÎÎÎÎ
ÎÎÎÎÎ
**Symbol**
ÎÎÎÎÎ
ÎÎÎÎÎ
**Min**
ÎÎÎÎÎ
ÎÎÎÎÎ
**Max**
ÎÎÎÎ
ÎÎÎÎ
**Unit**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**OFF CHARACTERISTICS**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Sustaining Voltage (Note 3)
(IC= 30 mAdc, IB= 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
VCEO(sus)
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
350
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
−
ÎÎÎÎ
ÎÎÎÎ
**ÎÎÎÎ**
Vdc
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector Cutoff Current
(VCE= 250 Vdc, IB= 0)
**ÎÎÎÎÎ**
ICEO
**ÎÎÎÎÎ**
−
**ÎÎÎÎÎ**
0.1
**ÎÎÎÎ**
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector Cutoff Current
(VCE= 350 Vdc, VBE= 0)
ÎÎÎÎÎ
**ÎÎÎÎÎ**
ICES
ÎÎÎÎÎ
**ÎÎÎÎÎ**
−
ÎÎÎÎÎ
**ÎÎÎÎÎ**
0.01
ÎÎÎÎ
**ÎÎÎÎ**
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Emitter Cutoff Current
(VBE= 5.0 Vdc, IC= 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎÎÎÎ
ÎÎÎÎÎ
−
ÎÎÎÎÎ
ÎÎÎÎÎ
0.5
ÎÎÎÎ
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ON CHARACTERISTICS**(Note 3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
DC Current Gain
(IC= 0.3 Adc, VCE= 10 Vdc)
(IC= 1.0 Adc, VCE= 10 Vdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
hFE
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
30
10
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
175
−
ÎÎÎÎ
ÎÎÎÎ
**ÎÎÎÎ**
−
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Saturation Voltage
(IC= 1.0 Adc, IB= 0.2 Adc)
**ÎÎÎÎÎ**
VCE(sat)
**ÎÎÎÎÎ**
−
**ÎÎÎÎÎ**
1.0
**ÎÎÎÎ**
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Base−Emitter On Voltage
(IC= 1.0 Adc, VCE= 10 Vdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(on)
ÎÎÎÎÎ
ÎÎÎÎÎ
−
ÎÎÎÎÎ
ÎÎÎÎÎ
1.5
ÎÎÎÎ
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**DYNAMIC CHARACTERISTICS**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Current Gain − Bandwidth Product
(IC= 0.2 Adc, VCE= 10 Vdc, f = 2.0 MHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
fT
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
10
ÎÎÎÎÎ
ÎÎÎÎÎ
**ÎÎÎÎÎ**
−
ÎÎÎÎ
ÎÎÎÎ
**ÎÎÎÎ**
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small−Signal Current Gain
(IC= 0.2 Adc, VCE= 10 Vdc, f = 1.0 kHz)
ÎÎÎÎÎ
hfe
ÎÎÎÎÎ
25
ÎÎÎÎÎ
−
ÎÎÎÎ
−|**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ|**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ|**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ|**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ|**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ| |---|---|---|---|---|---| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
**Characteristic**

|ÎÎÎ
**Symbol**

ÎÎÎ|ÎÎÎ
**Min**

ÎÎÎ|ÎÎÎ
**Max**

ÎÎÎ|Î

ÎÎÎÎ
**Unit**
ÎÎÎÎ| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**OFF CHARACTERISTICS**
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ||||| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (Note 3)
(IC= 30 mAdc, IB= 0)

|Î

ÎÎÎÎ

VCEO(sus)

|Î

ÎÎÎÎ

350

|Î

ÎÎÎÎ

−

|Î

ÎÎÎÎ

Vdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**

**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector Cutoff Current
(VCE= 250 Vdc, IB= 0)
|**ÎÎÎÎ**

**Î**
**ÎÎÎÎ**
ICEO
|**Î**
**ÎÎÎÎ**

**Î**
**ÎÎÎÎ**
−
|**Î**
**ÎÎÎÎ**

**Î**
**ÎÎÎÎ**
0.1
|**Î**
**ÎÎÎÎ**
**Î**
**ÎÎÎÎ**
mAdc| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current
(VCE= 350 Vdc, VBE= 0)

|Î

ÎÎÎÎ

ICES

|Î

ÎÎÎÎ

−

|Î

ÎÎÎÎ

0.01

|Î

ÎÎÎÎ

mAdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current
(VBE= 5.0 Vdc, IC= 0)

|**ÎÎÎ**

Î

ÎÎÎÎ

IEBO

|**ÎÎÎ**

Î

ÎÎÎÎ

−

|**ÎÎÎ**

Î

ÎÎÎÎ

0.5

|**Î**
**ÎÎÎÎ**
Î

ÎÎÎÎ

mAdc
| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain
(IC= 0.3 Adc, VCE= 10 Vdc)
(IC= 1.0 Adc, VCE= 10 Vdc)

|**Î**ÎÎÎ
Î

ÎÎÎÎ
ÎÎÎÎ

hFE

|ÎÎÎÎ
Î
Î

ÎÎÎÎ
ÎÎÎÎ

30
10

|ÎÎÎÎ
Î
Î

ÎÎÎÎ
ÎÎÎÎ

175
−

|ÎÎÎÎ
Î
Î

ÎÎÎÎ
ÎÎÎÎ

−| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**

**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Collector−Emitter Saturation Voltage
(IC= 1.0 Adc, IB= 0.2 Adc)
|**ÎÎÎ**

**Î**
**ÎÎÎÎ**
VCE(sat)
|**ÎÎÎ**

**Î**
**ÎÎÎÎ**
−
|**Î**
**ÎÎÎÎ**

**Î**
**ÎÎÎÎ**
1.0
|**Î**
**ÎÎÎÎ**
**Î**
**ÎÎÎÎ**
Vdc| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**
Base−Emitter On Voltage
(IC= 1.0 Adc, VCE= 10 Vdc)

|Î

ÎÎÎÎ
ÎÎÎ
VBE(on)

ÎÎÎ|Î

ÎÎÎÎ
ÎÎÎ
−

ÎÎÎ|Î
Î
ÎÎÎÎ
ÎÎÎÎ
1.5

ÎÎÎÎ|Î
Î
ÎÎÎÎ
ÎÎÎÎ
Vdc
ÎÎÎÎ| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
**DYNAMIC CHARACTERISTICS**
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ||||| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain − Bandwidth Product
(IC= 0.2 Adc, VCE= 10 Vdc, f = 2.0 MHz)

|Î

ÎÎÎÎ

fT

|Î

ÎÎÎÎ

10

|Î

ÎÎÎÎ

−

|Î

ÎÎÎÎ

MHz| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small−Signal Current Gain
(IC= 0.2 Adc, VCE= 10 Vdc, f = 1.0 kHz)
|**ÎÎÎ**

Î
ÎÎÎÎ
hfe
|**Î**
**ÎÎÎÎ**

Î
ÎÎÎÎ
25
|**Î**
**ÎÎÎÎ**

Î
ÎÎÎÎ
−
|**Î**
**ÎÎÎÎ**
Î
ÎÎÎÎ
−| 3. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2.0%. **==> picture [487 x 170] intentionally omitted <==** **----- Start of picture text -----**
200 1.4
VCE = 10 V
100 TJ = 150°C 1.2
25°C 1
50
30 -�55°C 0.8 TJ = 25°C
20
0.6
10 -�55°C
0.4 150°C
5.0
0.2 VCE(sat)) @ IC/IB = 5.0
3.0
2.0 0
0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
hFE, DC CURRENT GAIN
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
**----- End of picture text -----**
**Figure 1. DC Current Gain** **Figure 2. Collector−Emitter Saturation Voltage** **http://onsemi.com 2** **MJD5731** **==> picture [489 x 603] intentionally omitted <==** **----- Start of picture text -----**
1.4 1.4
1.2 1.2
1.0 TJ = - 55°C 1
VBE(sat) @ IC/IB = 5.0 VBE(sat) @ IC/IB = 5 V
0.8 0.8
25°C VBE(on) @ VCE = 4 V
0.6 150°C 0.6
0.4 0.4 TJ = 25°C
0.2 0.2 VCE(sat) @ IC/IB = 5 V
0 0
0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 0.02 0.04 0.06 0.1 0.2 0.4 0.6 1 2
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 3. Base−Emitter Voltage Figure 4. “On” Voltages
10 There are two limitations on the power handling ability of
5.0 a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VC − V− VCE
2.0 1.0�ms 100 �s limits of the transistor that must be observed for reliable
1.0 TC = 25°C dc 500 �s operation; i.e., the transistor must not be subjected to greater
0.5 dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150°C; TCJ(pk) = 150°C; TC = 150°C; TC°C; TCC; TCC is
0.2
variable depending on conditions. Second breakdown pulse
0.1 BONDING WIRE LIMIT limits are valid for duty cycles to 10% provided TJ(pk)
0.05 THERMAL LIMIT ≤ 150°C. TJ(pk) may be calculated from the data in Figure 6. 150°C. TJ(pk) may be calculated from the data in Figure 6.°C. TJ(pk) may be calculated from the data in Figure 6.C. TJ(pk) may be calculated from the data in Figure 6.J(pk) may be calculated from the data in Figure 6. may be calculated from the data in Figure 6.
SECOND BREAKDOWN LIMIT
At high case temperatures, thermal limitations will reduce
0.02
the power that can be handled to values less than the
0.015.0 10 20 30 50 100 200 300 500 limitations imposed by second breakdown.
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Forward Bias Safe Operating Area
1
0.7 D = 0.5
0.5
0.3 0.2
0.2
0.1
0.05 R�JC(t) = r(t) R�JC P(pk)
0.1 R�JC = 8.33°C/W MAX
0.07 0.02 D CURVES APPLY FOR POWER
0.05 0.01 PULSE TRAIN SHOWN t 1
0.03 SINGLE PULSE READ TIME AT t1 t 2
0.02 TJ(pk) - TC = P(pk) �JC(t) DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1 k
t, TIME (ms)
V, VOLTAGE (V) V, VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMP)
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
**----- End of picture text -----**
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VC − V− VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150°C; TCJ(pk) = 150°C; TC = 150°C; TC°C; TCC; TCC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 6. 150°C. TJ(pk) may be calculated from the data in Figure 6.°C. TJ(pk) may be calculated from the data in Figure 6.C. TJ(pk) may be calculated from the data in Figure 6.J(pk) may be calculated from the data in Figure 6. may be calculated from the data in Figure 6. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. **Figure 6. Thermal Response** **http://onsemi.com** **3** **MJD5731** ## TURN-ON PULSE **==> picture [434 x 197] intentionally omitted <==** **----- Start of picture text -----**
t1
VBE(off)
Vin 0 V
VCC
RC
AP t1 ≤ 7.0 ns SCOPE
PROX.-11 V 100 t≤3 < 15 ns t2 < 500 �s Vin RB
t2 t3
51 Cjd << Ceb
APPROX. +�9.0 V +�4.0 V
DUTY CYCLE ≈ 2.0%
TURN-OFF PULSE
**----- End of picture text -----**
**Figure 7. Switching Time Equivalent Circuit** **==> picture [237 x 169] intentionally omitted <==** **----- Start of picture text -----**
1.0
0.5 tr TVJCC = 25 = 200 V°C
0.3 IC/IB = 5.0
0.2 td
0.1
0.05
0.03
0.02
0.01
0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0
IC, COLLECTOR CURRENT (AMPS)
μ
t, TIME (��s)
**----- End of picture text -----**
**Figure 8. Turn−On Resistive Switching Times** **==> picture [236 x 170] intentionally omitted <==** **----- Start of picture text -----**
5.0
3.0 ts VTJCC = 25 = 200 V°C
2.0
IC/IB = 5.0
tf
1.0
0.5
0.3
0.2
0.1
0.05
0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0
IC, COLLECTOR CURRENT (AMPS)
μ
t, TIME (��s)
**----- End of picture text -----**
**Figure 9. Resistive Turn−Off Switching Times** **==> picture [237 x 141] intentionally omitted <==** **----- Start of picture text -----**
Test Circuit
VCE MONITOR
RBB1 = TUT
MJE171 150 � 100 mH
50 +
INPUT VCC = 20 V
- IC MONITOR
50 RBB2 =
100 �
+ VBB2 = RS =
VBB1 = 10 V 0 0.1 �
-
**----- End of picture text -----**
**==> picture [196 x 166] intentionally omitted <==** **----- Start of picture text -----**
Voltage and Current Waveforms
tw ≈ 3 ms
(SEE NOTE 1)
0 V
INPUT
VOLTAGE
-�5 V
100 ms
0.63 A
COLLECTOR
CURRENT
0 V
VCER
COLLECTOR
VOLTAGE
10 V
VCE(sat)
**----- End of picture text -----**
**Figure 10. Inductive Load Switching** **http://onsemi.com** **4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [486 x 546] intentionally omitted <==** **----- Start of picture text -----**
4 DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
1 ® [2]
DATE 21 JUL 2015
3
SCALE 1:1
NOTES:
A 1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
E C 2. CONTROLLING DIMENSION: INCHES.
A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLDMENSIONS b3, L3 and Z.
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
4 NOT EXCEED 0.006 INCHES PER SIDE.
L3 Ele 4| Of Z 5. DIMENSIONS D AND E ARE DETERMINED AT THE
D DETAIL A H OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
1 2 3 PLANE H.
7. OPTIONAL MOLD FEATURE.
L4 NOTE 7 DIM MININCHESMAX MILLIMETERSMIN MAX
b2 c BOTTOM VIEW A 0.086 0.094 2.18 2.38
e SIDE VIEW A1 0.000 0.005 0.00 0.13
b b 0.025 0.035 0.63 0.89
TOP VIEW 0.005 (0.13) M C b2b3 0.0280.180 0.0450.215 0.724.57 1.145.46
c 0.018 0.024 0.46 0.61
c2 0.018 0.024 0.46 0.61
H Z Z D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
L2 [GAUGE] PLANE C SEATINGPLANE H 0.370 0.410 9.40 10.41
L 0.055 0.070 1.40 1.78
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
L L3 0.035 0.050 0.89 1.27
A1 BOTTOM VIEW L4 −−− 0.040 −−− 1.01
wat L1 h GF CONSTRUCTIONSALTERNATE Z 0.155 −−− 3.93 −−−
DETAIL A
ROTATED 9 CW GENERIC
MARKING DIAGRAM*
STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:
PIN 1. BASE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. GATE
2. COLLECTOR 2. DRAIN 2. CATHODE 2. ANODE 2. ANODE
3. EMITTER 3. SOURCE 3. ANODE 3. GATE 3. CATHODE
4. COLLECTOR 4. DRAIN 4. CATHODE 4. ANODE 4. ANODE XXXXXXG AYWW
ALYWW XXX
STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10: XXXXXG
PIN 1. MT1 PIN 1. GATE PIN 1. N/C PIN 1. ANODE PIN 1. CATHODE
2. MT2 2. COLLECTOR 2. CATHODE 2. CATHODE 2. ANODE
3. GATE 3. EMITTER 3. ANODE 3. RESISTOR ADJUST 3. CATHODE a d
4. MT2 4. COLLECTOR 4. CATHODE 4. CATHODE 4. ANODE
IC Discrete
SOLDERING FOOTPRINT* XXXXXX = Device Code
A = Assembly Location
6.20 3.00
L = Wafer Lot
0.244 0.118
2.58 Y = Year
0.102 WW = Work Week
G = Pb−Free Package
5.80 *This information is generic. Please refer
0.228 1.60 6.17 to device data sheet for actual part
0.063 0.243 marking.
Ts.
SCALE 3:1 mm
inches
**----- End of picture text -----**
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