# Bipolar (BJT) Single Transistor, General Purpose, NPN, 400 V, 1 A, 15 W, TO-252 (DPAK)

![Product image](https://novapart.co/image/farnell:2441290/)

**URL**: https://novapart.co/products/MJD50T4G/bipolar-bjt-single-transistor-general-purpose-npn
**SKU**: MJD50T4G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.1940
**Stock**: 10+

## Description

TRA; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:10MHz; Power Dissipation Pd:15W; DC Collector Current:1A; DC Current Gain hFE:30hFE; Tra

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 15W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 10MHz |
| Transistor Case Style | TO-252 (DPAK) |
| Dc Current Gain Hfe Min | 30hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 1A |
| Collector Emitter Voltage Max | 400V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2441290/)

## MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G 

## High Voltage Power Transistors 

## **DPAK for Surface Mount Applications** 

Designed for line operated audio output amplifier, switchmode supply drivers and other switching applications. 

## **Features** 

- Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) 

- Electrically Similar to Popular TIP47, and TIP50 

## **http://onsemi.com** 

**NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS, 15 WATTS** 

- Epoxy Meets UL 94 V−0 @ 0.125 in 

- NJV Prefix for Automotive and Other Applications Requiring 

COLLECTOR 2, 4 1 BASE 3 EMITTER ~~:~~ 

- Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant 1 BASE **MAXIMUM RATINGS Rating Symbol Max Unit** 3 Collector−Emitter Voltage VCEO Vdc EMITTER MJD47, NJVMJD47T4G 250 MJD50, NJVMJD50T4G 400 ~~es :~~ 4 Collector−Base Voltage VCB Vdc MJD47, NJVMJD47T4G 350 MJD50, NJVMJD50T4G 500 1 2 3 Emitter−Base Voltage VEB 5 Vdc ~~ee[ee] ee~~ **DPAK** Collector Current − Continuous IC 1 Adc **CASE 369C** Collector Current − Peak ICM 2 Adc **STYLE 1** Base Current IB 0.6 Adc Total Power Dissipation@ TC = 25 ° C PD 15 W **MARKING DIAGRAM** Derate above 25 ° C 0.12 W/ ° C ~~a~~ Total Power Dissipation (Note 1) PD AYWW @ TA = 25 ° C 1.56 W JxxG Derate above 25 ° C 0.0125 W/ ° C ~~|,~~ Operating and Storage Junction TJ, Tstg −65 to +150 ~~ft~~ ° C ) A ~~8)~~ = Assembly Location Temperature Range Y = Year ESD − Human Body Model HBM 3B V WW = Work Week ~~——~~ ESD − Machine Model MM C V Jxx = Device Code 

- These Devices are Pb−Free and are RoHS Compliant 

**MARKING DIAGRAM** 

AYWW JxxG ~~8)~~ A = Assembly Location Y = Year WW = Work Week Jxx = Device Code xx = 47 or 50 G = Pb−Free Package 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2014 **August, 2014 − Rev. 15** 

**MJD47/D** 

## **MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G** 

## **THERMAL CHARACTERISTICS** 

|**Characteristic**<br>**Symbol**<br>**Max**<br>**Unit**<br>Thermal Resistance Junction−to−Case<br>R�JC<br>8.33<br>°C/W<br>Thermal Resistance Junction−to−Ambient (Note 2)<br>R�JA<br>80<br>°C/W<br>Lead Temperature for Soldering Purpose<br>TL<br>260<br>°C<br>2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**Symbol**<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**Min**<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**Max**<br>ÎÎÎÎ<br>ÎÎÎÎ<br>**Unit**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**OFF CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Collector−Emitter Sustaining Voltage (Note 3)<br>(IC= 30 mAdc, IB= 0)<br>MJD47, NJVMJD47T4G<br>MJD50, NJVMJD50T4G<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>VCEO(sus)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>250<br>400<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>−<br>−<br>ÎÎÎÎ<br>ÎÎÎÎ<br>ÎÎÎÎ<br>ÎÎÎÎ<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 150 Vdc, IB= 0)<br>MJD47, NJVMJD47T4G<br>(VCE= 300 Vdc, IB= 0)<br>MJD50, NJVMJD50T4G<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICEO<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>−<br>−<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>0.2<br>0.2<br>ÎÎÎÎ<br>ÎÎÎÎ<br>ÎÎÎÎ<br>**ÎÎÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Collector Cutoff Current<br>(VCE= 350 Vdc, VBE= 0)<br>MJD47, NJVMJD47T4G<br>(VCE= 500 Vdc, VBE= 0)<br>MJD50, NJVMJD50T4G<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ICES<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>−<br>−<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>0.1<br>0.1<br>ÎÎÎÎ<br>ÎÎÎÎ<br>ÎÎÎÎ<br>ÎÎÎÎ<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current<br>(VBE= 5 Vdc, IC= 0)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>IEBO<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>−<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>1<br>ÎÎÎÎ<br>ÎÎÎÎ<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ON CHARACTERISTICS**(Note 3)<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain<br>(IC= 0.3 Adc, VCE= 10 Vdc)<br>(IC= 1 Adc, VCE= 10 Vdc)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>hFE<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>30<br>10<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>150<br>−<br>ÎÎÎÎ<br>ÎÎÎÎ<br>ÎÎÎÎ<br>**ÎÎÎÎ**<br>−<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Saturation Voltage<br>(IC= 1 Adc, IB= 0.2 Adc)<br>**ÎÎÎÎÎ**<br>VCE(sat)<br>**ÎÎÎÎÎ**<br>−<br>**ÎÎÎÎÎ**<br>1<br>**ÎÎÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter On Voltage<br>(IC= 1 Adc, VCE= 10 Vdc)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>VBE(on)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>−<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>1.5<br>ÎÎÎÎ<br>ÎÎÎÎ<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**DYNAMIC CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current Gain − Bandwidth Product<br>(IC= 0.2 Adc, VCE= 10 Vdc, f = 2 MHz)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>fT<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>10<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>−<br>ÎÎÎÎ<br>ÎÎÎÎ<br>**ÎÎÎÎ**<br>MHz<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Small−Signal Current Gain<br>(IC= 0.2 Adc, VCE= 10 Vdc, f = 1 kHz)<br>ÎÎÎÎÎ<br>hfe<br>ÎÎÎÎÎ<br>25<br>ÎÎÎÎÎ<br>−<br>ÎÎÎÎ<br>−<br>3. Pulse Test: Pulse Width≤300�s, Duty Cycle≤2%.|**Characteristic**|**Characteristic**|**Symbol**|**Max**|**Unit**|
|---|---|---|---|---|---|
||Thermal Resistance Junction−to−Case||R�JC|8.33|°C/W|
||Thermal Resistance Junction−to−Ambient (Note 2)||R�JA|80|°C/W|
||Lead Temperature for Soldering Purpose||TL|260|°C|
||2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.<br>|||||
||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br><br>**Characteristic**<br><br>|ÎÎÎ<br><br>ÎÎÎ<br><br>**Symbol**<br><br><br>|ÎÎÎÎ<br>Î<br><br>ÎÎÎÎ<br><br>**Min**<br><br><br>|ÎÎÎÎ<br>Î<br><br>ÎÎÎÎ<br><br>**Max**<br><br><br>|ÎÎÎÎ<br>Î<br><br>ÎÎÎÎ<br><br>**Unit**<br>|
||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br><br>**OFF CHARACTERISTICS**<br><br><br><br>|||||
||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br><br>Collector−Emitter Sustaining Voltage (Note 3)<br>(IC= 30 mAdc, IB= 0)<br>MJD47, NJVMJD47T4G<br>MJD50, NJVMJD50T4G<br><br><br><br><br><br>|ÎÎÎ<br>Î<br>Î<br><br>ÎÎÎ<br>ÎÎÎÎ<br>ÎÎÎÎ<br><br>VCEO(sus)<br><br><br><br><br><br><br>|ÎÎÎ<br><br>Î<br>Î<br><br>ÎÎÎ<br>ÎÎÎÎ<br>ÎÎÎÎ<br><br>250<br>400<br><br><br><br><br><br><br>|ÎÎÎÎ<br>Î<br>Î<br>Î<br><br>ÎÎÎÎ<br>ÎÎÎÎ<br>ÎÎÎÎ<br><br>−<br>−<br><br><br><br><br><br><br>|ÎÎÎÎ<br>Î<br>Î<br>Î<br><br>ÎÎÎÎ<br>ÎÎÎÎ<br>ÎÎÎÎ<br><br>Vdc<br><br>|
||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br><br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 150 Vdc, IB= 0)<br>MJD47, NJVMJD47T4G<br>(VCE= 300 Vdc, IB= 0)<br>MJD50, NJVMJD50T4G<br><br><br><br>|ÎÎÎ<br><br><br>Î<br>Î<br><br>ÎÎÎ<br>ÎÎÎÎ<br>ÎÎÎÎ<br>**ÎÎÎ**<br>ICEO<br><br><br><br>|Î<br>ÎÎÎÎ<br><br>Î<br>Î<br>Î<br>**Î**<br>ÎÎÎÎ<br>ÎÎÎÎ<br>ÎÎÎÎ<br>**ÎÎÎÎ**<br>−<br>−<br><br><br><br>|Î<br>ÎÎÎÎ<br><br>Î<br>Î<br>Î<br>**Î**<br>ÎÎÎÎ<br>ÎÎÎÎ<br>ÎÎÎÎ<br>**ÎÎÎÎ**<br>0.2<br>0.2<br><br><br><br>|Î<br>ÎÎÎÎ<br>Î<br>Î<br>Î<br>**Î**<br>ÎÎÎÎ<br>ÎÎÎÎ<br>ÎÎÎÎ<br>**ÎÎÎÎ**<br>mAdc|
||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br><br>Collector Cutoff Current<br>(VCE= 350 Vdc, VBE= 0)<br>MJD47, NJVMJD47T4G<br>(VCE= 500 Vdc, VBE= 0)<br>MJD50, NJVMJD50T4G<br><br><br><br><br><br>|Î<br>Î<br>Î<br><br>ÎÎÎÎ<br>ÎÎÎÎ<br>ÎÎÎÎ<br><br>ICES<br><br><br><br><br><br><br>|Î<br>Î<br>Î<br><br>ÎÎÎÎ<br>ÎÎÎÎ<br>ÎÎÎÎ<br><br>−<br>−<br><br><br><br><br><br><br>|Î<br>Î<br>Î<br><br>ÎÎÎÎ<br>ÎÎÎÎ<br>ÎÎÎÎ<br><br>0.1<br>0.1<br><br><br><br><br><br><br>|Î<br>Î<br>Î<br><br>ÎÎÎÎ<br>ÎÎÎÎ<br>ÎÎÎÎ<br><br>mAdc<br><br>|
||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br><br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current<br>(VBE= 5 Vdc, IC= 0)<br><br>|Î<br>ÎÎÎÎ<br><br>Î<br>**Î**<br>ÎÎÎÎ<br>ÎÎÎÎ<br>IEBO<br><br><br>ÎÎÎ|Î<br>ÎÎÎÎ<br><br>Î<br>Î<br>ÎÎÎÎ<br>ÎÎÎÎ<br>−<br><br><br>ÎÎÎÎ|Î<br>ÎÎÎÎ<br><br>Î<br>Î<br>ÎÎÎÎ<br>ÎÎÎÎ<br>1<br><br><br>ÎÎÎÎ|Î<br>ÎÎÎÎ<br>Î<br>Î<br>ÎÎÎÎ<br>ÎÎÎÎ<br>mAdc<br>ÎÎÎÎ|
||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ON CHARACTERISTICS**(Note 3)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎ|||||
||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br><br>DC Current Gain<br>(IC= 0.3 Adc, VCE= 10 Vdc)<br>(IC= 1 Adc, VCE= 10 Vdc)<br><br><br><br>|Î<br>Î<br><br><br>ÎÎÎÎ<br>ÎÎÎÎ<br><br>hFE<br><br><br><br>|Î<br>Î<br><br><br>ÎÎÎÎ<br>ÎÎÎÎ<br><br>30<br>10<br><br><br><br>|Î<br>Î<br><br><br>ÎÎÎÎ<br>ÎÎÎÎ<br><br>150<br>−<br><br><br><br>|Î<br>Î<br><br><br>ÎÎÎÎ<br>ÎÎÎÎ<br><br>−|
||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br><br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Saturation Voltage<br>(IC= 1 Adc, IB= 0.2 Adc)<br>|**Î**<br>**ÎÎÎÎ**<br><br>**Î**<br>**ÎÎÎÎ**<br>VCE(sat)<br>|**Î**<br>**ÎÎÎÎ**<br><br>**Î**<br>**ÎÎÎÎ**<br>−<br>|**Î**<br>**ÎÎÎÎ**<br><br>**Î**<br>**ÎÎÎÎ**<br>1<br>|**Î**<br>**ÎÎÎÎ**<br>**Î**<br>**ÎÎÎÎ**<br>Vdc|
||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br><br>Base−Emitter On Voltage<br>(IC= 1 Adc, VCE= 10 Vdc)<br><br>|Î<br><br>ÎÎÎÎ<br><br>VBE(on)<br><br><br>|Î<br><br>ÎÎÎÎ<br><br>−<br><br><br>|Î<br><br>ÎÎÎÎ<br><br>1.5<br><br><br>|Î<br><br>ÎÎÎÎ<br><br>Vdc<br>|
||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br><br>**DYNAMIC CHARACTERISTICS**<br><br><br><br>|||||
||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br><br>Current Gain − Bandwidth Product<br>(IC= 0.2 Adc, VCE= 10 Vdc, f = 2 MHz)<br><br><br>|ÎÎÎ<br>Î<br><br>ÎÎÎ<br>ÎÎÎÎ<br><br>fT<br><br><br>|ÎÎÎ<br><br>Î<br><br>ÎÎÎ<br>ÎÎÎÎ<br><br>10<br><br><br>|ÎÎÎÎ<br>Î<br>Î<br><br>ÎÎÎÎ<br>ÎÎÎÎ<br><br>−<br><br><br>|ÎÎÎÎ<br>Î<br>Î<br><br>ÎÎÎÎ<br>ÎÎÎÎ<br><br>MHz|
||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br><br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Small−Signal Current Gain<br>(IC= 0.2 Adc, VCE= 10 Vdc, f = 1 kHz)<br>|**Î**<br>**ÎÎÎÎ**<br><br><br>ÎÎÎÎ<br>hfe<br>|**Î**<br>**ÎÎÎÎ**<br><br>Î<br>ÎÎÎÎ<br>25<br>|**Î**<br>**ÎÎÎÎ**<br><br>Î<br>ÎÎÎÎ<br>−<br>|**Î**<br>**ÎÎÎÎ**<br>Î<br>ÎÎÎÎ<br>−|
||3. Pulse Test: Pulse Width≤300�s, Duty Cycle≤2%.|||||



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**MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [492 x 625] intentionally omitted <==**

**----- Start of picture text -----**<br>
TA TC<br>2.5 25 TURN-ON PULSE VCC<br>RC<br>APPROX<br>2 20 +11 V Vin SCOPE<br>RB<br>Vin 0 51<br>1.5 15 VEB(off)<br>t1<br>1 10 T C TA (SURFACE MOUNT) APPROX t3 Cjd << Ceb -�4 V<br>+11 V t1 ≤ 7 ns<br>10 < t2 < 500 �s<br>0.5 5 Vin t3 < 15 ns<br>DUTY CYCLE ≈ 2%<br>APPROX -�9 V<br>0 025 50 75 100 125 150 t2 RB and RC VARIED TO OBTAIN<br>T, TEMPERATURE (°C) TURN-OFF PULSE DESIRED CURRENT LEVELS.<br>Figure 1. Power Derating Figure 2. Switching Time Equivalent Circuit<br>200 1.4<br>VCE = 10 V<br>100 1.2<br>TJ = 150°C<br>60 1<br>40 25°C VBE(sat) @ IC/IB = 5<br>0.8<br>20 -�55°C VBE(on) @ VCE = 4 V<br>0.6<br>10<br>0.4 TJ = 25°C<br>6<br>4 0.2 VCE(sat) @ IC/IB = 5<br>2 0<br>0.02 0.04 0.06 0.1 0.2 0.4 0.6 1 2 0.02 0.04 0.06 0.1 0.2 0.4 0.6 1 2<br>IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)<br>Figure 3. DC Current Gain Figure 4. “On” Voltages<br>1<br>0.7 D = 0.5<br>0.5<br>0.3 0.2<br>0.2<br>0.1<br>0.05 R�JC(t) = r(t) R�JC P(pk)<br>0.1 R�JC = 8.33°C/W MAX<br>0.07 0.02 D CURVES APPLY FOR POWER<br>0.05 0.01 PULSE TRAIN SHOWN t 1<br>0.03 SINGLE PULSE READ TIME AT t1 t 2<br>0.02 TJ(pk) - TC = P(pk) �JC(t) DUTY CYCLE, D = t1/t2<br>0.01<br>0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1 k<br>t, TIME (ms)<br>PD, POWER DISSIPATION (WATTS)<br>V, VOLTAGE (VOLTS)<br>hFE, DC CURRENT GAIN<br>r(t), TRANSIENT THERMAL<br>RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


**Figure 5. Thermal Response** 

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**MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G** 

**==> picture [234 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
5<br>2<br>100��s<br>1 1�ms 500��s<br>0.5<br>TC ≤ 25°C dc<br>0.2<br>0.1 SECOND BREAKDOWN LIMIT<br>THERMAL LIMIT @ 25°C<br>0.05<br>WIRE BOND LIMIT<br>0.02 CURVES APPLY BELOW MJD47<br>0.01 RATED VCEO MJD50<br>0.005<br>5 10 20 50 100 200 300 500<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>IC, COLLECTOR CURRENT (AMP)<br>**----- End of picture text -----**<br>


There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 

The data of Figure 6 is based on TJ(pk) = 150�C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150�C.  TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 

**Figure 6. Active Region Safe Operating Area** 

**==> picture [234 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>TJ = 25°C<br>0.5<br>VCC = 200 V<br>IC/IB = 5<br>0.2 tr<br>0.1 td<br>0.05<br>0.02<br>0.01<br>0.02 0.05 0.1 0.2 0.5 1 2<br>IC, COLLECTOR CURRENT (AMPS)<br>μ<br>t, TIME (��s)<br>**----- End of picture text -----**<br>


**Figure 7. Turn−On Time** 

**==> picture [235 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
5<br>ts<br>2<br>1<br>TJ = 25°C<br>0.5 VCC = 200 V<br>IC/IB = 5<br>0.2 tf<br>0.1<br>0.05<br>0.02 0.05 0.1 0.2 0.5 1 2<br>IC, COLLECTOR CURRENT (AMPS)<br>μ<br>t, TIME (��s)<br>**----- End of picture text -----**<br>


**Figure 8. Turn-Off Time** 

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**4** 

**MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**†|
|MJD47G|369C<br>(Pb−Free)|75 Units / Rail|
|MJD47T4G|369C<br>(Pb−Free)|2,500 / Tape & Reel|
|NJVMJD47T4G*|369C<br>(Pb−Free)|2,500 / Tape & Reel|
|MJD50G|369C<br>(Pb−Free)|75 Units / Rail|
|MJD50T4G|369C<br>(Pb−Free)|2,500 / Tape & Reel|
|NJVMJD50T4G*|369C<br>(Pb−Free)|2,500 / Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. 

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**5** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**==> picture [486 x 546] intentionally omitted <==**

**----- Start of picture text -----**<br>
4 DPAK (SINGLE GAUGE)<br>CASE 369C<br>ISSUE F<br>1 ® [2]<br>DATE 21 JUL 2015<br>3<br>SCALE 1:1<br>NOTES:<br>A 1. DIMENSIONING AND TOLERANCING PER ASME<br>Y14.5M, 1994.<br>E C 2. CONTROLLING DIMENSION: INCHES.<br>A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-<br>b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLDMENSIONS b3, L3 and Z.<br>FLASH, PROTRUSIONS, OR BURRS. MOLD<br>FLASH, PROTRUSIONS, OR GATE BURRS SHALL<br>4 NOT EXCEED 0.006 INCHES PER SIDE.<br>L3 Ele 4| Of Z 5. DIMENSIONS D AND E ARE DETERMINED AT THE<br>D DETAIL A H OUTERMOST EXTREMES OF THE PLASTIC BODY.<br>6. DATUMS A AND B ARE DETERMINED AT DATUM<br>1 2 3 PLANE H.<br>7. OPTIONAL MOLD FEATURE.<br>L4 NOTE 7 DIM MININCHESMAX MILLIMETERSMIN MAX<br>b2 c BOTTOM VIEW A 0.086 0.094 2.18 2.38<br>e SIDE VIEW A1 0.000 0.005 0.00 0.13<br>b b 0.025 0.035 0.63 0.89<br>TOP VIEW 0.005 (0.13) M C b2b3 0.0280.180 0.0450.215 0.724.57 1.145.46<br>c 0.018 0.024 0.46 0.61<br>c2 0.018 0.024 0.46 0.61<br>H Z Z D 0.235 0.245 5.97 6.22<br>E 0.250 0.265 6.35 6.73<br>e 0.090 BSC 2.29 BSC<br>L2 [GAUGE] PLANE C SEATINGPLANE H 0.370 0.410 9.40 10.41<br>L 0.055 0.070 1.40 1.78<br>L1 0.114 REF 2.90 REF<br>L2 0.020 BSC 0.51 BSC<br>L L3 0.035 0.050 0.89 1.27<br>A1 BOTTOM VIEW L4 −−− 0.040 −−− 1.01<br>wat L1 h GF CONSTRUCTIONSALTERNATE Z 0.155 −−− 3.93 −−−<br>DETAIL A<br>ROTATED 9  CW GENERIC<br>MARKING DIAGRAM*<br>STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:<br>PIN 1. BASE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. GATE<br>2. COLLECTOR 2. DRAIN 2. CATHODE 2. ANODE 2. ANODE<br>3. EMITTER 3. SOURCE 3. ANODE 3. GATE 3. CATHODE<br>4. COLLECTOR 4. DRAIN 4. CATHODE 4. ANODE 4. ANODE XXXXXXG AYWW<br>ALYWW XXX<br>STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10: XXXXXG<br>PIN 1. MT1 PIN 1. GATE PIN 1. N/C PIN 1. ANODE PIN 1. CATHODE<br>2. MT2 2. COLLECTOR 2. CATHODE 2. CATHODE 2. ANODE<br>3. GATE 3. EMITTER 3. ANODE 3. RESISTOR ADJUST 3. CATHODE a d<br>4. MT2 4. COLLECTOR 4. CATHODE 4. CATHODE 4. ANODE<br>IC Discrete<br>SOLDERING FOOTPRINT* XXXXXX = Device Code<br>A = Assembly Location<br>6.20 3.00<br>L = Wafer Lot<br>0.244 0.118<br>2.58 Y =  Year<br>0.102 WW = Work Week<br>G = Pb−Free Package<br>5.80 *This information is generic. Please refer<br>0.228 1.60 6.17 to device data sheet for actual part<br>0.063 0.243 marking.<br>Ts.<br>SCALE 3:1 mm<br>inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON10527D** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: DPAK (SINGLE GAUGE) PAGE 1 OF 1** ~~ee~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2018 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi’s** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

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◊ 

**==> picture [232 x 43] intentionally omitted <==**



## Links

- [View this product on Novapart](https://novapart.co/products/MJD50T4G/bipolar-bjt-single-transistor-general-purpose-npn)
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- [Supplier page](https://es.farnell.com/on-semiconductor/mjd50t4g/bipolar-transistor-npn-400v-d/dp/2441290)
---

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