# Bipolar (BJT) Single Transistor, PNP, 100 V, 6 A, 20 W, TO-252 (DPAK), Surface Mount ![Product image](https://novapart.co/image/farnell:3368639/) **URL**: https://novapart.co/products/MJD42CRLG/bipolar-bjt-single-transistor-pnp-100-v-6-a-20-w **SKU**: MJD42CRLG **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.3380 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | MJD42 | | Qualification | - | | Power Dissipation | 20W | | Transistor Mounting | Surface Mount | | Transistor Polarity | PNP | | Transition Frequency | 3MHz | | Transistor Case Style | TO-252 (DPAK) | | Dc Current Gain Hfe Min | 15hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 6A | | Collector Emitter Voltage Max | 100V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3368639/) ## Complementary Power MuD426 (PNP) Transistors ## **DPAK for Surface Mount Applications** ## **www.onsemi.com** Designed for general purpose amplifier and low speed switching applications. ## **Features** - Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) - Straight Lead Version in Plastic Sleeves (“1” Suffix) - Electrically Similar to Popular TIP41 and TIP42 Series **SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS, 20 WATTS** ## **COMPLEMENTARY** - Epoxy Meets UL 94 V−0 @ 0.125 in COLLECTOR COLLECTOR • NJV Prefix for Automotive and Other Applications Requiring 2, 4 2, 4 Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant 1 1 BASE BASE **MAXIMUM RATINGS** 3 3 **Rating Symbol Max Unit** EMITTER EMITTER Collector−Emitter Voltage VCEO 100 Vdc 4 Collector−Base Voltage VCB 100 Vdc Emitter−Base Voltage VEB 5 Vdc 4 Collector Current − Continuous IC 6 Adc Collector Current − Peak ICM 10 Adc 1[2] 3 123 ~~=a~~ Base Current IB 2 Adc ~~«~~ **DPAK IPAK** Total Power Dissipation PD W **CASE 369C CASE 369D** @ TC = 25 ° C 20 W/ ° C **STYLE 1 STYLE 1** Derate above 25 ° C 0.16 ~~EE~~ **MARKING DIAGRAMS** Total Power Dissipation (Note 1) PD W @ TA = 25 ° C 1.75 Derate above 25 ° C 0.014 W/ ° C Operating and Storage Junction TJ, Tstg −65 to +150 ° C AYWW AYWW Temperature Range J4xCG J4xCG ESD − Human Body Model HBM 3B V ~~FE~~ ESD − Machine Model MM C V ~~2~~ DPAK ~~a~~ IPAK 0 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be A = Assembly Location assumed, damage may occur and reliability may be affected. Y = Year A = Assembly Location Y = Year WW = Work Week J4xC = Device Code x = 1 or 2 G = Pb−Free Package 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: **MJD41C/D** **1** © Semiconductor Components Industries, LLC, 2016 **July, 2016 − Rev. 13** **MJD41C (NPN), MJD42C (PNP)** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Thermal Resistance, Junction−to−Case|R�JC|6.25|°C/W| |Thermal Resistance, Junction−to−Ambient (Note 2)|R�JA|71.4|°C/W| 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ## **ELECTRICAL CHARACTERISTICS** (TC = 25 � C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise|noted)|||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||| |Collector−Emitter Sustaining Voltage (Note 3)
(IC= 30 mAdc, IB= 0)|VCEO(sus)|100|−|Vdc| |Collector Cutoff Current
(VCE= 60 Vdc, IB= 0)|ICEO|−|50|�Adc| |Collector Cutoff Current
(VCE= 100 Vdc, VEB= 0)|ICES|−|10|�Adc| |Emitter Cutoff Current
(VBE= 5 Vdc, IC= 0)|IEBO|−|0.5|mAdc| |**ON CHARACTERISTICS**(Note 3)||||| |DC Current Gain
(IC= 0.3 Adc, VCE= 4 Vdc)
(IC= 3 Adc, VCE= 4 Vdc)|hFE|30
15|−
75|−| |Collector−Emitter Saturation Voltage
(IC= 6 Adc, IB= 600 mAdc)|VCE(sat)|−|1.5|Vdc| |Base−Emitter On Voltage
(IC= 6 Adc, VCE= 4 Vdc)|VBE(on)|−|2|Vdc| |**DYNAMIC CHARACTERISTICS**||||| |Current Gain − Bandwidth Product (Note 4)
(IC= 500 mAdc, VCE= 10 Vdc, ftest= 1 MHz)|fT|3|−|MHz| |Small−Signal Current Gain
(IC= 0.5 Adc, VCE= 10 Vdc, f = 1 kHz)|hfe|20|−|−| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2%. 4. fT = ⎪ hfe ⎪• ftest. **www.onsemi.com** **2** **MJD41C (NPN), MJD42C (PNP)** ## **TYPICAL CHARACTERISTICS** **==> picture [486 x 184] intentionally omitted <==** **----- Start of picture text -----**
TA TC VCC
2.5 25 +�30 V
2 20 25 �s RC
+11 V RB SCOPE
1.5 15 0
TC
-�9 V 51 D1
1 10 TA SURFACE MOUNT
tr, tf ≤ 10 ns -�4 V
DUTY CYCLE = 1%
0.5 5
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
�D1 MUST BE FAST RECOVERY TYPE, e.g.:
0 0 ��MSB5300 USED ABOVE IB ≈ 100 mA
25 50 75 100 125 150 ��MSD6100 USED BELOW IB ≈ 100 mA
T, TEMPERATURE (°C) REVERSE ALL POLARITIES FOR PNP.
PD, POWER DISSIPATION (WATTS)
**----- End of picture text -----**
**Figure 1. Power Derating** **Figure 2. Switching Time Test Circuit** **==> picture [483 x 176] intentionally omitted <==** **----- Start of picture text -----**
500 2
TJ = 25°C
300 VCE = 2 V 1 VCC = 30 V
200 TJ = 150°C 0.7 IC/IB = 10
0.5
100 25°C
70 0.3 tr
50 0.2
30
20 -�55°C 0.1
0.07 td @ VBE(off) ≈ 5 V
0.05
10
7 0.03
5 0.02
0.06 0.1 0.2 0.3 0.4 0.6 1 2 4 6 0.06 0.1 0.2 0.4 0.6 1 2 4 6
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
μ
t, TIME (��s)
hFE, DC CURRENT GAIN
**----- End of picture text -----**
**Figure 3. DC Current Gain** **Figure 4. Turn−On Time** **==> picture [491 x 173] intentionally omitted <==** **----- Start of picture text -----**
1.4 1.4
VCE = 4 V IC/IB = 10
1.2 1.2
1.0 1.0
0.8 −55 ° C 0.8 −55 ° C
−40 ° C −40 ° C
0.6 25 ° C 0.6 25 ° C
0.4 80 ° C 0.4 80 ° C
0.2 T A = 150 ° C 0.2 TA = 150 ° C
0 0
0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
, BASE−EMITTER
BE(sat)
, BASE−EMITTER VOLTAGE (V) V
SATURATION VOLTAGE (V)
BE(ON)
V
**----- End of picture text -----**
**Figure 5. Base Emitter Voltage vs. Collector Current** **Figure 6. Base Emitter Saturation Voltage vs. Collector Current** **www.onsemi.com** **3** **MJD41C (NPN), MJD42C (PNP)** ## **TYPICAL CHARACTERISTICS** **==> picture [493 x 599] intentionally omitted <==** **----- Start of picture text -----**
1.0 5
0.9 I C /I B = 10 TA = 150 ° C 80 ° C 3 V T JCC = 25 = 30 V °C
0.8 2 IC/IB = 10
0.7 25 ° C ts IB1 = IB2
1
0.6 0.7
0.5 0.5
0.4 0.3
0.3 0.2
tf
0.2
−40 ° C 0.1
0.1
and −55 ° C 0.07
0 0.05
0.01 0.1 1 10 0.06 0.1 0.2 0.4 0.6 1 2 4 6
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (AMP)
Figure 7. Collector Emitter Saturation Voltage Figure 8. Turn−Off Time
vs. Collector Current
2 300
TJ = 25°C TJ = 25°C
1.6 200
IC = 1 A 2.5 A 5 A Cib
1.2
100
0.8
70 Cob
0.4 50
0 30
10 20 30 50 100 200 300 500 1000 0.5 1 2 3 5 10 20 30 50
IB, BASE CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)
Figure 9. Collector Saturation Region Figure 10. Capacitance
1
0.7
D = 0.5
0.5
0.3
0.2
0.2 0.1 RR � � JC(t) JC = 6.25 = r(t) R°C/W MAX �JC P (pk)
0.1 0.05 D CURVES APPLY FOR POWER
0.07 0.02 PULSE TRAIN SHOWN t1
0.05 READ TIME AT t 1 t2
0.03 0.01 TJ(pk) - TC = P(pk) �JC(t) DUTY CYCLE, D = t 1 /t 2
0.02 SINGLE PULSE
0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1000
t, TIME (ms)
μ
, BASE−EMITTER t, TIME (��s)
CE(sat)
V
SATURATION VOLTAGE (V)
C, CAPACITANCE (pF)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
RESISTANCE (NORMALIZED)
r(t), EFFECTIVE TRANSIENT THERMAL
**----- End of picture text -----**
**Figure 11. Thermal Response** **www.onsemi.com** **4** ## **MJD41C (NPN), MJD42C (PNP)** **==> picture [235 x 170] intentionally omitted <==** **----- Start of picture text -----**
10
500��s 100��s
5
3
2 dc 1�ms
5�ms
1
0.5 WIRE BOND LIMIT
0.3 THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.1 CURVES APPLY BELOW RATED VCEO
0.05 TC = 25°C SINGLE PULSE
0.03 TJ = 150°C MJD41C, 42C
0.01
1 2 3 5 7 10 20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMP)
**----- End of picture text -----**
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 12 is based on TJ(pk) = 150�C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) � 150�C. TJ(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. **Figure 12. Maximum Forward Bias Safe Operating Area** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**|||| |---|---|---|---| |**Device**|**Package Type**|**Package**|**Shipping**†| |MJD41CRLG|DPAK
(Pb−Free)|369C|1,800 / Tape & Reel| |MJD41CT4G|DPAK
(Pb−Free)|369C|2,500 / Tape & Reel| |NJVMJD41CT4G*|DPAK
(Pb−Free)|369C|2,500 / Tape & Reel| |MJD42CG|DPAK
(Pb−Free)|369C|75 Units / Rail| |MJD42C1G|IPAK
(Pb−Free)|369D|75 Units / Rail| |MJD42CRLG|DPAK
(Pb−Free)|369C|1,800 / Tape & Reel| |NJVMJD42CRLG*|DPAK
(Pb−Free)|369C|1,800 / Tape & Reel| |MJD42CT4G|DPAK
(Pb−Free)|369C|2,500 / Tape & Reel| |NJVMJD42CT4G*|DPAK
(Pb−Free)|369C|2,500 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable **www.onsemi.com** **5** **MJD41C (NPN), MJD42C (PNP)** ## **PACKAGE DIMENSIONS** **DPAK (SINGLE GAUGE)** CASE 369C ISSUE D **==> picture [467 x 392] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
C 1. DIMENSIONING AND TOLERANCING PER ASME
A Y14.5M, 1994.
E A 2.3. CONTROLLING DIMENSION: INCHES.THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
L3 4 Z 5. DIMENSIONS D AND E ARE DETERMINED AT THEOUTERMOST EXTREMES OF THE PLASTIC BODY.
1 2 3 D DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUMPLANE H.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
L4 A 0.086 0.094 2.18 2.38
b2 A1 0.000 0.005 0.00 0.13
b c b 0.025 0.035 0.63 0.89
b2 0.030 0.045 0.76 1.14
e 0.005 (0.13) M C H b3 0.180 0.215 4.57 5.46
c 0.018 0.024 0.46 0.61
L2 [GAUGE] PLANE C SEATINGPLANE c2D 0.0180.235 0.0240.245 0.465.97 0.616.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
H 0.370 0.410 9.40 10.41
L A1 L 0.055 0.070 1.40 1.78
L1 L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
DETAIL A L3 0.035 0.050 0.89 1.27
ROTATED 90 CW � L4 −−− 0.040 −−− 1.01
Z 0.155 −−− 3.93 −−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
SOLDERING FOOTPRINT* 3. EMITTER
4. COLLECTOR
6.20 3.00
0.244 0.118
2.58
0.102
5.80
1.60 6.17
0.228
0.063 0.243
SCALE 3:1
� inches [mm] �
**----- End of picture text -----**
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **www.onsemi.com** **6** **MJD41C (NPN), MJD42C (PNP)** ## **PACKAGE DIMENSIONS** **IPAK** CASE 369D ISSUE C **==> picture [432 x 194] intentionally omitted <==** **----- Start of picture text -----**
B C NOTES:
1. DIMENSIONING AND TOLERANCING PER
V R E ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
4 Z DIM MIN MAX MIN MAX
A 0.235 0.245 5.97 6.35
S A B 0.250 0.265 6.35 6.73
HP 1 2 3 O t ee C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
−T− F 0.037 0.045 0.94 1.14
SEATING G 0.090 BSC 2.29 BSC
PLANE K H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
J S 0.025 0.040 0.63 1.01
F
H V 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
D 3 PL
STYLE 1:
G 0.13 (0.005) M T PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
**----- End of picture text -----**
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