# Bipolar (BJT) Single Transistor, PNP, 300 V, 500 mA, 15 W, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:9935282/)

**URL**: https://novapart.co/products/MJD350T4/bipolar-bjt-single-transistor-pnp-300-v-500-ma-15
**SKU**: MJD350T4
**Manufacturer**: STMICROELECTRONICS
**Price**: €0.2590
**Stock**: 1000+
**Lead Time**: 113 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:-; Power Dissipation Pd:15W; DC Collector Current:-500mA; DC Current Gain hFE:30hFE; Transistor Case Style

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 15W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | - |
| Transistor Case Style | TO-252 (DPAK) |
| Dc Current Gain Hfe Min | 30hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 500mA |
| Collector Emitter Voltage Max | 300V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9935282/)

**MJD340 MJD350** 

® 

## COMPLEMENTARY SILICON POWER TRANSISTORS 

- I STMicroelectronics PREFERRED SALESTYPES 

- I COMPLEMENTARY PNP - NPN DEVICES 

- I MEDIUM VOLTAGE CAPABILITY 

- I SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") 

- I ELECTRICAL SIMILAR TO MJE340 AND MJE350 

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## **APPLICATIONS** 

- I SOLENOID/RELAY DRIVERS 

- I GENERAL PURPOSE SWITCHING AND AMPLIFIER 

**DPAK TO-252** (Suffix "T4") 

## **DESCRIPTION** 

The MJD340 and MJD350 form complementary NPN - PNP pairs. 

They are manufactured using Medium Voltage Epitaxial-Planar technology, resulting in a rugged high performance cost-effective transistor. 

## **INTERNAL  SCHEMATIC  DIAGRAM** 

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## **ABSOLUTE  MAXIMUM  RATINGS** 

|**Symbol**|**Parameter**||**Value**|**Unit**|
|---|---|---|---|---|
|||**NPN**|**MJD340**||
|||**PNP**|**MJD350**||
|VCBO|Collector-Base Voltage(IE = 0)||300|V|
|VCEO|Collector-Emitter Voltage(IB= 0)||300|V|
|VEBO|Emitter-Base Voltage(IC = 0)||3|V|
|IC|Collector Current||0.5|A|
|ICM|Collector Peak Current(tp= 25oC)||0.75|A|
|Ptot|Total Power Dissipation at Tcase ≤25oC||15|W|
|Tstg|Storage Temperature||-65 to 150|oC|
|Tj|Max OperatingJunction Temperature||150|oC|



For PNP types voltage and current values are negative. 

1/5 

September 2003 

**MJD340 / MJD350** 

## **THERMAL  DATA** 

|Rthj-case<br>Rthj-amb|Thermal  Resistance  Junction-case                                Max<br>Thermal  Resistance  Junction-ambient                           Max|8.33<br>100|oC/W<br>oC/W|
|---|---|---|---|



## **ELECTRICAL  CHARACTERISTICS** (Tcase = 25[o] C unless otherwise specified) 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ICBO|Collector Cut-off<br>Current(vBE= 0)|VCB= 300 V|||0.1|mA|
|IEBO|Emitter Cut-off Curr<br>(IC= 0)|ent<br>VEB= 3 V|||0.1|mA|
|VCEO(sus)∗|Collector-Emitter<br>Sustaining Voltage<br>(IB= 0)|IC= 1 mA|300|||V|
|hFE∗|DC Current Gain|IC= 50 mA         VCE= 10 V|30||240||



∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % For PNP type voltage and current values are negative. 

## Safe Operating Area 

## Derating Curve 

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2/5 

**MJD340 / MJD350** 

DC Current Gain  (NPN type) 

Collector Emitter Saturation Voltage  (NPN type) 

DC Current Gain  (PNP type) 

Collector Emitter Saturation Voltage (PNP type) 

3/5 

**MJD340 / MJD350** 

## **TO-252 (DPAK) MECHANICAL DATA** 

|**DIM**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|
|**.**|**MIN.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|2.20||2.40|0.087||0.094|
|A1|0.90||1.10|0.035||0.043|
|A2|0.03||0.23|0.001||0.009|
|B|0.64||0.90|0.025||0.035|
|B2|5.20||5.40|0.204||0.213|
|C|0.45||0.60|0.018||0.024|
|C2|0.48||0.60|0.019||0.024|
|D|6.00||6.20|0.236||0.244|
|E|6.40||6.60|0.252||0.260|
|G|4.40||4.60|0.173||0.181|
|H|9.35||10.10|0.368||0.398|
|L2||0.8|||0.031||
|L4|0.60||1.00|0.024||0.039|
|V2|0o||8o|0o||0o|



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4/5 

**MJD340 / MJD350** 

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. 

All other names are the property of their respective owners. 

- © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES 

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. 

**http://www.st.com** 

5/5 



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- [Supplier page](https://es.farnell.com/stmicroelectronics/mjd350t4/transistor-pnp-d-pak/dp/9935282)
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