# Bipolar (BJT) Single Transistor, NPN, 100 V, 3 A, 15 W, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3943271/)

**URL**: https://novapart.co/products/MJD31CQ-13/bipolar-bjt-single-transistor-npn-100-v-3-a-15-w
**SKU**: MJD31CQ-13
**Manufacturer**: DIODES INC.
**Price**: €0.2340
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 15W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 3MHz |
| Transistor Case Style | TO-252 (DPAK) |
| Dc Current Gain Hfe Min | 10hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 3A |
| Collector Emitter Voltage Max | 100V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943271/)

**NOT RECOMMENDED FOR NEW DESIGN USE MJD31CUQ** 

**MJD31CQ** 

## **100V NPN HIGH VOLTAGE TRANSISTOR IN TO252** 

## **Description** 

This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications. 

## **Features** 

- BVCEO > 100V 

- IC = 3A high Continuous Collector Current 

## **Mechanical Data** 

   - Case: TO252 (DPAK) 

   - Case Material:  Molded Plastic, "Green" Molding Compound UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 

   - Weight: 0.34 grams (Approximate) 

- ICM = 5A Peak Pulse Current 

- Ideal for Power Switching or Amplification Applications 

- Complementary PNP Type: MJD32CQ 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

**==> picture [513 x 229] intentionally omitted <==**

**----- Start of picture text -----**<br>
C<br>TO252 (DPAK)<br>E<br>B<br>Cc Cc<br>&<br>E B<br>q<br>Top View  Device Schematic  Pin Out Configuration<br>Top View<br>Ordering Information g Information  Information  (Notes 4 & 5)<br>Product  Compliance  Marking Reel size (inches) Tape width (mm) Quantity per reel<br>MJD31CQ-13  Automotive  MJD31C  13  16  2,500<br>Notes:  1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.<br>2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"<br>    and Lead-free.<br>**----- End of picture text -----**<br>


## **Ordering Information g Information  Information** (Notes 4 & 5) 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

MJD31C = Product Type Marking Code = Manufacturers’ code marking YYWW = Date Code Marking YY = Last Digit of Year (ex: 16 = 2016) WW = Week Code (01 – 53) 

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MJD31CQ Document number: DS37049 Rev. 3 - 3 

November 2016 © Diodes Incorporated 

**MJD31CQ** 

## **Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|100|V|
|Collector-Emitter Voltage|VCEO|100|V|
|Emitter-Base Voltage|VEBO|6|V|
|Continuous Collector Current|IC|3|A|
|Peak Pulse Collector Current|ICM|5|A|
|Continuous Base Current|IB|1|A|
|Power Dissipation|PD|15|W|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation|(Note 6)|PD|3.9|W|
||(Note 7)||2.1||
||(Note 8)||1.6||
|Thermal Resistance, Junction to Ambient Air|(Note 6)|RθJA|32|C/W|
||(Note7)||59||
||(Note 8)||80||
|Thermal Resistance,Junction to Leads|(Note 9)|RθJL|8.4||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|C|



|**ESD Ratings **(Note 10)|**ESD Ratings **(Note 10)|**ESD Ratings **(Note 10)|**ESD Ratings **(Note 10)|**ESD Ratings **(Note 10)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|Electrostatic Discharge - Human BodyModel|ESD HBM|4,000|V|3A|
|Electrostatic Discharge - Machine Model|ESD MM|400|V|C|



- Notes: 6.  For a device mounted with the exposed collector pad on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 

   7.  Same as note (6), except mounted on 25mm x 25mm 1oz copper. 

   8.  Same as note (6), except mounted on minimum recommended pad (MRP) layout. 

   9.  Thermal resistance from junction to solder-point (on the exposed collector pad). 10.  Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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MJD31CQ Document number: DS37049 Rev. 3 - 3 

November 2016 © Diodes Incorporated 

**MJD31CQ** 

## **Thermal Characteristics** 

**==> picture [443 x 367] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 10<br>V CE(sat) VCE(sat)<br>Limited Limited<br>1 DC 1 DC<br>1s 100ms<br>100ms<br>10ms<br>10ms<br>1ms<br>100m 1ms 0.1 100s<br>100µs<br>Single Pulse Single Pulse<br>T amb =25°C T CASE =25°C<br>10m nr J 0.01 |<br>100m 1 10 100 0.1 1 A) 11SU 10 100<br>VCE  Collector-Emitter Voltage (V) VCE  Collector-Emitter Voltage (V)<br>Safe Operating Area Safe Operating Area<br>8<br>80 T AMB =25°C Lin TS NAL<br>TTC Minimum Copper ewer TT<br>6<br>60 CT ETAT TT TTAaggTT AWATN dessa D=0.5 UCCNT TT<br>D=0.5<br>40 CTSa UP UIN S 4 here D=0.2 vc TNC TTITIN TTI<br>mantioamil( MUN) Zann, 8! <Ghil;”<br>D=0.1<br>D=0.2<br>20 eea A+UAT Single Pulse 2 “pr.BIN¢, D=0.05 QARnn LUTETAAAU<br>D=0.05<br>Single Pulse<br>T =25°C<br>D=0.1 CASE<br>0 Te| 0 Zum AE<br>csenasetetama lll AN aillilil IA<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Transient Thermal Impedance<br>xy;<br>  Collector Current (A)   Collector Current (A)<br>IC IC<br>Thermal Resistance (°C/W) Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


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MJD31CQ Document number: DS37049 Rev. 3 - 3 

November 2016 © Diodes Incorporated 

**MJD31CQ** 

## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

**Characteristic Symbol Min Typ Max Unit Test Condition** ~~DS~~ Collector-Emitter Breakdown Voltage (Note 11) BVCEO ~~GO~~ 100 ~~QO~~  ~~(OU~~  V ~~(OO~~ IC = 30mA, IB = 0 ~~(OD~~ Collector Cut-off Current ICEO   ~~GO~~ 1 ~~(OO~~ μA VCB = 60V, IB = 0 ~~nD~~ Collector Cut-off Current ICES ~~GO~~   ~~GO~~ 1 ~~GOO~~ μA VCE = 100V, VEB = 0 ~~nD~~ Emitter Cut-off Current IEBO ~~GD~~   ~~(OD~~ 1 ~~QO~~ μA ~~(OO~~ VEB = 5V, IC = 0 ~~DS~~ Collector-Emitter Saturation Voltage (Note 11) VCE(sat) ~~GO~~  ~~QO~~  ~~(OU~~ 1.2 V ~~(OO~~ IC = 3.0A, IB = 375mA ~~(OD~~ Base-Emitter Turn-On Voltage (Note 11) VBE(on)   ~~GO~~ 1.8 ~~QO~~ V ~~(OO~~ IC = 3A, VCE = 4V DC Current Gain (Note 11) hFE 25    VCE = 4V, IC = 1A ~~eeee ee~~ 10 ~~ee ee~~ 50 ~~ee~~ VCE ~~a~~ = 4V, IC = 3A ~~(OD~~ Current Signal Current Gain Hfe 20  ~~GO~~  ~~OO~~  ~~(SO~~ VCE = 10V, IC = 0.5A, f = 1KHz ~~nD~~ Current Gain-Bandwidth Product ~~nD~~ fT ~~A~~ 3.0 ~~RD~~  ~~GRD~~  ~~Nd~~ MHz IC = 500mA, VCE = 10V, f = 1MHz Note: 11. Measured under pulsed conditions.  Pulse width  300μs. Duty cycle 2%. 

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MJD31CQ Document number: DS37049 Rev. 3 - 3 

November 2016 © Diodes Incorporated 

**MJD31CQ** 

## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

**==> picture [485 x 657] intentionally omitted <==**

**----- Start of picture text -----**<br>
1,000 1<br>eared] cae TE HE Lace V CE  = 4V EE I C /I B  = 8<br>FEHR ee errata<br>en a el a<br>TA = 150 ° C<br>AA Ae A 0 a<br>Ee NTE TT PLETE<br>T TA = 85°C N TIL ELE AA<br>TA = 25°C<br>100 rr | ll 0.1 aaa TA = 150 ay: °C  AA<br>matteea T A  = -55°C eerreerermrrreeraTTTAEarenes aSeera9a, T A  = 85°C Ml)/7,4/4) T A  = 25°C aoeLE<br>| Pd SH/fpf al<br>T A  = -55°C<br>CO CCE Ce ANT CTA mull<br>HICH r SZ HNNi<br>10 0.01<br>ATTAIN EECA |a SY<br>1 10 100 1,000 10,000 1 10 100 1,000 10,000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 1 Typical DC Current Gain vs. Collector Current Figure 2 Typical Collector-Emitter Saturation Voltage<br>vs. Collector Current<br>1.2 1.2<br>V CE  = 4V IC/IB = 8<br>1.0 Z 1.0<br>StiFa TNSfm. ee aul eel aLAA<br>0.8 a at MeN 0.8 a y a Za<br>eee umaatilllFE ab. z Zl<br>TA = -55 ° C TA = -55°C<br>0.6 LSC oar “Gal | 0.6 Se ea<br>a TA = 25°C  emt alow Sl Nh TA = 25°C Il<br>amme Swe lh YI Pete TTT ELI<br>0.4 T A  = 85°C 0.4 T A = 85°C<br>eh eT HI<br>peaks. Ae lll eet tral CUTE TM UT<br>0.2 T A  = 150°C 0.2 TA = 150°C<br>aw 7) Max Al ONG PIE TIE EAI ETT<br>INQ ase NGS a a<br>0 AT A CA 0 an a<br>1 10 100 1,000 10,000 1 10 100 1,000 10,000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 3 Typical Base-Emitter Turn-On Voltage<br>Figure 4 Typical Base-Emitter Saturation Voltage<br>vs. Collector Current<br>vs. Collector Current<br>1,000 @m -—~ SeeHEH<br>f = 1MHz<br>ee Aeee<br>SS<br>100 | Cibo<br>aa re<br>See<br>10 [ESEEEEeeaaa [EEE] EEE Cobo SHHEE|<br>1 Connon<br>0.1 1 10 100<br>VR, REVERSE VOLTAGE (V)<br>MJD31CQ Figure 5 Typical Capacitance Characteristics 5 of 7<br>Document number: DS37049 Rev. 3 - 3 www.diodes.com<br>, BASE-EMITTER SATURATION VOLTAGE (V)<br>BE(SAT)<br>V<br>, BASE-EMITTER TURN-ON VOLTAGE (V)<br>BE(ON)<br>V<br>CAPACITANCE (pF)<br>, DC CURRENT GAIN<br>FE<br>h<br>VOLTAGE (V)<br>, COLLECTOR-EMITTER<br>SATURATION<br>CE(SAT)<br>V<br>**----- End of picture text -----**<br>


November 2016 © Diodes Incorporated 

**MJD31CQ** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**==> picture [470 x 550] intentionally omitted <==**

**----- Start of picture text -----**<br>
E<br>A<br>b3<br>7°±1°<br>c<br>L3<br>re<br>TO252 (DPAK)<br>Dim  Min  Max  Typ<br>A  2.19  2.39  2.29<br>D A2 A1  0.00  0.13  0.08<br>H<br>L4 A2  0.97  1.17  1.07<br>b  0.64  0.88  0.783<br>b2  0.76  1.14  0.95<br>ap ==<br>b3  5.21  5.46 5.33<br>c  0.45 0.58 0.531<br>e D  6.00 6.20 6.10<br>b(3x) D1  5.21  -  -<br>al b2(2x) === e  -  -  2.286<br>E  6.45  6.70  6.58<br>0.508<br>Gauge Plane E1  4.32  -  -<br>H  9.40 10.41  9.91<br>L  1.40  1.78  1.59<br>E1 D1 Seating Plane<br>L3  0.88  1.27  1.08<br>L A1 L4  0.64  1.02  0.83<br>2.74REF a  0°  10°  -<br>All Dimensions in mm<br>ial<br>Suggested Pad Layout<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>X1<br>Y1<br>Dimensions  Value (in mm)<br>ES C  4.572<br>Y2<br>X  1.060<br>X1  5.632<br>C<br>Y  2.600<br>te<br>Y1  5.700<br>Y Y2  10.700<br>wait X ==<br>a<br>**----- End of picture text -----**<br>


Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device Terminals and PCB tracking. 

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MJD31CQ Document number: DS37049 Rev. 3 - 3 

November 2016 © Diodes Incorporated 

**MJD31CQ** 

**IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated **www.diodes.com**[,.] ~~Re)a~~ MJD31CQ 7 of 7 November 2016 Document number: DS37049 Rev. 3 - 3 **www.diodes.com** © Diodes Incorporated 



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---

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