# Bipolar (BJT) Single Transistor, General Purpose, NPN, 100 V, 3 A, 15 W, TO-252 (DPAK) ![Product image](https://novapart.co/image/farnell:2101376/) **URL**: https://novapart.co/products/MJD31C1G/bipolar-bjt-single-transistor-general-purpose-npn **SKU**: MJD31C1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.1080 **Stock**: 10+ ## Description Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:3MHz; Power Dissipation Pd:15W; DC Collector Current:3A; DC Current Gain hFE:10hFE; Transistor Ca ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Product Range | - | | Qualification | AEC-Q101 | | Power Dissipation | 15W | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN | | Transition Frequency | 3MHz | | Transistor Case Style | TO-252 (DPAK) | | Dc Current Gain Hfe Min | 10hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 3A | | Collector Emitter Voltage Max | 100V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2101376/) ## MJD31 (NPN), MJD32 (PNP) ## Complementary Power Transistors ## **DPAK For Surface Mount Applications** Designed for general purpose amplifier and low speed switching applications. **www.onsemi.com** **SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS** ## **Features** - Lead Formed for Surface Mount Applications in Plastic Sleeves - Straight Lead Version in Plastic Sleeves (“1” Suffix) - Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) - Electrically Similar to Popular TIP31 and TIP32 Series - Epoxy Meets UL 94, V−0 @ 0.125 in - NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable ## **COMPLEMENTARY** COLLECTOR COLLECTOR Qualified and PPAP Capable 2,4 2,4 • These Devices are Pb−Free and are RoHS Compliant **MAXIMUM RATINGS** 1 1 BASE BASE **Rating Symbol Max Unit** Collector−Emitter Voltage VCEO Vdc 3 3 MJD31, MJD32 40 EMITTER EMITTER MJD31C, MJD32C 100 ~~—_ * *~~ Collector−Base Voltage VCB Vdc 4 MJD31, MJD32 40 MJD31C, MJD32C 100 4 Emitter−Base Voltage VEB 5.0 Vdc Collector Current − Continuous IC 3.0 Adc 1 2 ~~=»~~ Collector Current − Peak ICM 5.0 Adc 3 12 3 & Base Current IB 1.0 Adc **DPAK IPAK** Total Power Dissipation PD W **CASE 369C CASE 369D** @ TC = 25 ° C 15 W/ ° C **STYLE 1 STYLE 1** Derate above 25 ° C 0.12 Total Power Dissipation PD W **MARKING DIAGRAMS** @ TA = 25 ° C 1.56 W/ ° C Derate above 25 ° C 0.012 ~~aes~~ Operating and Storage Junction Temperature TJ, Tstg −65 to ° C AYWW YWW Range +150 J3xxG J3xxG ESD − Human Body Model HBM 3B V ~~ee~~ ESD − Machine Model MM C V DPAK IPAK Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not A = Site Code be assumed, damage may occur and reliability may be affected. Y = Year WW = Work Week **THERMAL CHARACTERISTICS** xx = 1, 1C, 2, or 2C G = Pb−Free Package - These Devices are Pb−Free and are RoHS Compliant |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Thermal Resistance, Junction−to−Case|R JC|8.3|°C/W| |Thermal Resistance, Junction−to−Ambient*|R JA|80|°C/W| |Lead Temperature for Soldering Purposes|TL|260|°C| ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. *These ratings are applicable when surface mounted on the minimum pad sizes recommended. Publication Order Number: **MJD31/D** **1** © Semiconductor Components Industries, LLC, 2016 **September, 2016 − Rev. 16** ## **MJD31 (NPN), MJD32 (PNP)** ## **ELECTRICAL CHARACTERISTICS** (TC = 25 � C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||| |Collector−Emitter Sustaining Voltage (Note 1)
(IC= 30 mAdc, IB= 0)
MJD31, MJD32
MJD31C, MJD32C|VCEO(sus)|40
100|−
−|Vdc| |Collector Cutoff Current
(VCE= 40 Vdc, IB= 0)
MJD31, MJD32
(VCE= 60 Vdc, IB= 0)
MJD31C, MJD32C|ICEO|−
−|50
50|�Adc| |Collector Cutoff Current
(VCE= Rated VCEO, VEB= 0)|ICES|−|20|�Adc| |Emitter Cutoff Current
(VBE= 5 Vdc, IC= 0)|IEBO|−|1|mAdc| |**ON CHARACTERISTICS**(Note 1)||||| |DC Current Gain
(IC= 1 Adc, VCE= 4 Vdc)
(IC= 3 Adc, VCE= 4 Vdc)|hFE|25
10|−
50|| |Collector−Emitter Saturation Voltage
(IC= 3 Adc, IB= 375 mAdc)|VCE(sat)|−|1.2|Vdc| |Base−Emitter On Voltage
(IC= 3 Adc, VCE= 4 Vdc)|VBE(on)|−|1.8|Vdc| |**DYNAMIC CHARACTERISTICS**||||| |Current Gain − Bandwidth Product (Note 2)
(IC= 500 mAdc, VCE= 10 Vdc, ftest= 1 MHz)|fT|3|−|MHz| |Small−Signal Current Gain
(IC= 0.5 Adc, VCE= 10 Vdc, f = 1 kHz)|hfe|20|−|| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width � 300 � s, Duty Cycle � 2%. 2. fT = ⎪ hfe ⎪• ftest. **www.onsemi.com** **2** **MJD31 (NPN), MJD32 (PNP)** ## **TYPICAL CHARACTERISTICS** **==> picture [253 x 181] intentionally omitted <==** **----- Start of picture text -----**
TA TC
2.5 25
2 20
1.5 15 TA (SURFACE MOUNT)
TC
1 10
0.5 5
0 0
25 50 75 100 125 150
T, TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
**----- End of picture text -----**
**Figure 1. Power Derating** **==> picture [221 x 177] intentionally omitted <==** **----- Start of picture text -----**
VCC
+�30 V
RC
25 �s
+11 V RB SCOPE
0
-�9 V 51 D1
tr, tf ≤ 10 ns -�4 V
DUTY CYCLE = 1%
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
�D1 MUST BE FAST RECOVERY TYPE, e.g.:
��1N5825 USED ABOVE IB ≈ 100 mA
��MSD6100 USED BELOW IB ≈ 100 mA
REVERSE ALL POLARITIES FOR PNP.
**----- End of picture text -----**
**Figure 2. Switching Time Test Circuit** **==> picture [491 x 172] intentionally omitted <==** **----- Start of picture text -----**
2 3
IC/IB = 10 2 IB1 = IB2
0.70.51 tr @ VCC = 30 V TJ = 25°C 0.71 tf @ VCC = 30 V ts′ tITCsJ′/I = t = 25B = 10s - 1/8 t°C f
0.5
0.3 tr @ VCC = 10 V
0.3 tf @ VCC = 10 V
0.2
0.1
0.07 td @ VBE(off) = 2 V 0.1
0.05 0.07
0.05
0.03
0.02 0.03
0.03 0.05 0.07 0.1 0.3 0.5 0.7 1 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 3
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
μ μ
t, TIME (��s) t, TIME (��s)
**----- End of picture text -----**
**Figure 3. Turn−On Time** **Figure 4. Turn−Off Time** **==> picture [488 x 174] intentionally omitted <==** **----- Start of picture text -----**
100
Duty Cycle = 0.5
0.2
0.1
10 0.05
0.02
1
0.01
0.1
Single Pulse
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, PULSE TIME (sec)
C/W)
°
(
JA
�
R
**----- End of picture text -----**
**Figure 5. Thermal Response** **www.onsemi.com** **3** **MJD31 (NPN), MJD32 (PNP)** ## **TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)** **==> picture [492 x 597] intentionally omitted <==** **----- Start of picture text -----**
1000
1000
150 ° C VCE = 4 V 150 ° C VCE = 2 V
100 25 ° C ° 25 ° C
−55 C 100 −55 ° C
10 10
1 1
0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 6. DC Current Gain at VCE = 4 V Figure 7. DC Current Gain at VCE = 2 V
0.6 1.2
IC/IB = 10 IC/IB = 10
1.1
0.5
1.0
0.4 0.9 −55 ° C
0.8
150 ° C 25 ° C
0.3 0.7
0.6
0.2 150 ° C
0.5
25 ° C 0.4
0.1
−55 ° C 0.3
0 0.2
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 8. Collector−Emitter Saturation Voltage Figure 9. Base−Emitter Saturation Voltage
1.2 2
VCE = 5 V TA =
1.1 25 ° C
1.0 1.6
0.9
−55 ° C
0.8 1.2
100 mA 500 mA
0.7 25 ° C
0.6 0.8 IC = 3 A
0.5 150 ° C 1 A
0.4 0.4
0.3
10 mA
0.2 0
0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 1000
IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA)
, DC CURRENT GAIN , DC CURRENT GAIN
FE FE
h h
VOLTAGE (V)
, COLL−EMITT SATURATION
CE(sat)
V , BASE−EMITT SATURATION VOLTAGE (V)
BE(sat)
V
, BASE−EMITTER ON VOLTAGE (V) , COLLECTOR−EMITTER VOLTAGE (V)
VBE(on) VCE
**----- End of picture text -----**
**Figure 10. Base-Emitter “On” Voltage** **Figure 11. Collector Saturation Region** **www.onsemi.com** **4** **MJD31 (NPN), MJD32 (PNP)** ## **TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)** **==> picture [493 x 370] intentionally omitted <==** **----- Start of picture text -----**
1000 100
TA = 25 ° C VCE = 5 V
TA = 25 ° C
Cib
100
Cob 10
10
1 1
0.1 1 10 100 0.001 0.01 0.1 1 10
VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (A)
Figure 12. Capacitance Figure 13. Current−Gain−Bandwidth Product
10
1
0.1
0.01
1 10 100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
PRODUCT (MHz)
C, CAPACITANCE (pF)
, CURRENT−GAIN − BANDWIDTH
fT
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 14. Safe Operating Area** **www.onsemi.com** **5** **MJD31 (NPN), MJD32 (PNP)** ## **TYPICAL CHARACTERISTICS − MJD32, MJD32C (PNP)** **==> picture [493 x 575] intentionally omitted <==** **----- Start of picture text -----**
1000 1000
150 ° C 25 ° C VCE = 4 V 150 ° C 25 ° C VCE = 2 V
100 100
−55 ° C −55 ° C
10 10
1 1
0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 15. DC Current Gain at VCE = 4 V Figure 16. DC Current Gain at VCE = 2 V
1 1.4
0.9 IC/IB = 10 150 ° C IC/IB = 10
1.2
0.8 −55 ° C
0.7
1.0
0.6
−55 ° C
0.5 0.8
0.4 25 ° C
0.6
0.3
0.2 150 ° C
25 ° C 0.4
0.1
0 0.2
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 17. Collector−Emitter Saturation Figure 18. Base−Emitter Saturation Voltage
Voltage
1.2 2
VCE = 5 V TA =
1.1 500 mA 25 ° C
1.0 1.6
0.9 100 mA IC = 3 A
0.8 150 ° C 1.2 1 A
0.7 25 ° C
0.6 0.8
0.5
−55 ° C 0.4
0.4
0.3
10 mA
0
0.2
0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 1000
IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA)
, DC CURRENT GAIN , DC CURRENT GAIN
FE FE
h h
, BASE−EMITTER
VOLTAGE (V)
, COLL−EMITT SATURATION BE(sat)
V
SATURATION VOLTAGE (V)
CE(sat)
V
, BASE−EMITTER ON VOLTAGE (V)
BE(on)
V
, COLLECTOR−EMITTER VOLTAGE (V)
CE
V
**----- End of picture text -----**
**Figure 19. Base−Emitter “On” Voltage** **Figure 20. Collector Saturation Region** **www.onsemi.com** **6** **MJD31 (NPN), MJD32 (PNP)** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 176] intentionally omitted <==** **----- Start of picture text -----**
1000 100
TA = 25 ° C VCE = 5 V
TA = 25 ° C
Cib
100
Cob
10
10
1 1
0.1 1 10 100 0.001 0.01 0.1 1 10
VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (A)
PRODUCT (MHz)
C, CAPACITANCE (pF)
, CURRENT−GAIN − BANDWIDTH
fT
**----- End of picture text -----**
**Figure 21. Capacitance** **Figure 22. Current−Gain−Bandwidth Product** **==> picture [240 x 176] intentionally omitted <==** **----- Start of picture text -----**
10
1 1 ms
1 s
0.1
0.01
1 10 100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 23. Safe Operating Area** **www.onsemi.com** **7** **MJD31 (NPN), MJD32 (PNP)** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**|||| |---|---|---|---| |**Device**|**Package Type**|**Package**|**Shipping**†| |MJD31CG|DPAK
(Pb−Free)|369C|75 Units / Rail| |NJVMJD31CG*|DPAK
(Pb−Free)|369C|75 Units / Rail| |MJD31C1G|IPAK
(Pb−Free)|369D|75 Units / Rail| |MJD31CRLG|DPAK
(Pb−Free)|369C|1,800 / Tape & Reel| |NJVMJD31CRLG*|DPAK
(Pb−Free)|369C|1,800 / Tape & Reel| |MJD31CT4G|DPAK
(Pb−Free)|369C|2,500 / Tape & Reel| |NJVMJD31CT4G*|DPAK
(Pb−Free)|369C|2,500 / Tape & Reel| |MJD31T4G|DPAK
(Pb−Free)|369C|2,500 / Tape & Reel| |NJVMJD31T4G*|DPAK
(Pb−Free)|369C|2,500 / Tape & Reel| |MJD32CG|DPAK
(Pb−Free)|369C|75 Units / Rail| |NJVMJD32CG*|DPAK
(Pb−Free)|369C|75 Units / Rail| |MJD32CRLG|DPAK
(Pb−Free)|369C|1,800 / Tape & Reel| |MJD32CT4G|DPAK
(Pb−Free)|369C|2,500 / Tape & Reel| |NJVMJD32CT4G*|DPAK
(Pb−Free)|369C|2,500 / Tape & Reel| |MJD32RLG|DPAK
(Pb−Free)|369C|1,800 / Tape & Reel| |MJD32T4G|DPAK
(Pb−Free)|369C|2,500 / Tape & Reel| |NJVMJD32T4G*|DPAK
(Pb−Free)|369C|2,500 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. **www.onsemi.com** **8** **MJD31 (NPN), MJD32 (PNP)** ## **PACKAGE DIMENSIONS** **DPAK (SINGLE GAUGE)** CASE 369C ISSUE F **==> picture [152 x 40] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
**----- End of picture text -----**
**==> picture [481 x 377] intentionally omitted <==** **----- Start of picture text -----**
A 1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
E C 2. CONTROLLING DIMENSION: INCHES.
A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLDMENSIONS b3, L3 and Z.
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
4 NOT EXCEED 0.006 INCHES PER SIDE.
L3 Z 5. DIMENSIONS D AND E ARE DETERMINED AT THE
D DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUMOUTERMOST EXTREMES OF THE PLASTIC BODY.
1 2 3 PLANE H.
7. OPTIONAL MOLD FEATURE.
L4 NOTE 7 DIM MININCHESMAX MILLIMETERSMIN MAX
b2 c BOTTOM VIEW A 0.086 0.094 2.18 2.38
e SIDE VIEW A1 0.000 0.005 0.00 0.13
b b 0.025 0.035 0.63 0.89
TOP VIEW 0.005 (0.13) M C b2b3 0.0280.180 0.0450.215 0.724.57 1.145.46
c 0.018 0.024 0.46 0.61
c2 0.018 0.024 0.46 0.61
H Z Z D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
L2 [GAUGE] PLANE C SEATINGPLANE H 0.370 0.410 9.40 10.41
L 0.055 0.070 1.40 1.78
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
L L3 0.035 0.050 0.89 1.27
A1 BOTTOM VIEW L4 −−− 0.040 −−− 1.01
L1 CONSTRUCTIONSALTERNATE Z 0.155 −−− 3.93 −−−
DETAIL A
ROTATED 90 CW � STYLE 1:
SOLDERING FOOTPRINT* PIN 1. BASE
2. COLLECTOR
3. EMITTER
6.20 3.00 4. COLLECTOR
0.244 0.118
2.58
0.102
5.80
1.60 6.17
0.228
0.063 0.243
SCALE 3:1
� inches [mm] �
**----- End of picture text -----**
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **www.onsemi.com** **9** **MJD31 (NPN), MJD32 (PNP)** ## **PACKAGE DIMENSIONS** **IPAK** CASE 369D ISSUE C **==> picture [186 x 171] intentionally omitted <==** **----- Start of picture text -----**
B C
V R E
4
a
A
S
1 2 3
−T−
SEATING
PLANE K
J
F
H
D 3 PL
G 0.13 (0.005) M T
**----- End of picture text -----**
**==> picture [158 x 188] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
Z DIM MIN MAX MIN MAX
A 0.235 0.245 5.97 6.35
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
F 0.037 0.045 0.94 1.14
G 0.090 BSC 2.29 BSC
H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
S 0.025 0.040 0.63 1.01
V 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
**----- End of picture text -----**
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