# Bipolar (BJT) Single Transistor, NPN, 100 V, 3 A, 15 W, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3943270/)

**URL**: https://novapart.co/products/MJD31C-13/bipolar-bjt-single-transistor-npn-100-v-3-a-15-w
**SKU**: MJD31C-13
**Manufacturer**: DIODES INC.
**Price**: €0.1640
**Stock**: 1000+
**Lead Time**: 302 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 15W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 3MHz |
| Transistor Case Style | TO-252 (DPAK) |
| Dc Current Gain Hfe Min | 10hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 3A |
| Collector Emitter Voltage Max | 100V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943270/)

**MJD31C** Cd 

## **100V NPN HIGH VOLTAGE TRANSISTOR IN TO252** 

## **Features** 

## **Mechanical Data** 

- BVCEO > 100V 

- IC = 3A high Continuous Collector Current 

- ICM = 5A Peak Pulse Current 

- Ideal for Power Switching or Amplification Applications 

- Complementary PNP Type: MJD32C 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

   - Case: TO252 (DPAK) 

   - Case Material:  Molded Plastic, "Green" Molding Compound UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 

   - Weight: 0.34 grams (Approximate) 

- **Qualified to AEC-Q101 Standards for High Reliability** 

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TO252 (DPAK)<br>**----- End of picture text -----**<br>


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Top View<br>**----- End of picture text -----**<br>


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C<br>B Cc<br>E<br>Device Schematic  Pin Out Configuration<br>Top View<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Product**|**Compliance**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|---|---|---|---|---|---|
|MJD31C-13|AEC-Q101|MJD31C|13|16|2,500|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free. 

   3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

MJD31C = Product Type Marking Code a = Manufacturers’ code marking YYWW = Date Code Marking YY = Last Digit of Year (ex: 17 = 2017) WW = Week Code (01 – 53) 

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MJD31C Document number: DS31625 Rev. 8 - 2 

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**MJD31C** 

**Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|100|V|
|Collector-Emitter Voltage|VCEO|100|V|
|Emitter-Base Voltage|VEBO|6|V|
|Continuous Collector Current|IC|3|A|
|Peak Pulse Collector Current|ICM|5|A|
|Continuous Base Current|IB|1|A|
|Power Dissipation|PD|15|W|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation|(Note 5)|PD|3.9|W|
||(Note 6)||2.1||
||(Note7)||1.6||
|Thermal Resistance, Junction to Ambient Air|(Note 5)|RθJA|32|C/W|
||(Note 6)||59||
||(Note7)||80||
|Thermal Resistance,Junction to Leads|(Note 8)|RθJL|3.6||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|C|



## **ESD Ratings** (Note 9) 

|**ESD Ratingsgss **(Note 9)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|Electrostatic Discharge - Human BodyModel|ESD HBM|4,000|V|3A|
|Electrostatic Discharge - Machine Model|ESD MM|400|V|C|



- Notes: 5.  For a device mounted with the exposed collector pad on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 

   6.  Same as note (5), except mounted on 25mm x 25mm 1oz copper. 

   7.  Same as note (5), except mounted on minimum recommended pad (MRP) layout. 

   8.  Thermal resistance from junction to solder-point (on the exposed collector pad). 

   9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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**MJD31C** 

## **Thermal Characteristics** 

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**----- Start of picture text -----**<br>
10 10<br>V CE(sat) VCE(sat)<br>Limited Limited<br>DC<br>1 1 DC<br>1s 100ms<br>100ms<br>10ms<br>10ms ~~ xX a XC<br>1ms<br>100m 1ms 0.1 100s<br>100µs<br>Single Pulse Single Pulse<br>T amb =25°C T CASE =25°C<br>10m ee ~ “i 0.01 Se<br>100m 1 10 100 0.1 1 10 100<br>VCE  Collector-Emitter Voltage (V) VCE  Collector-Emitter Voltage (V)<br>Safe Operating Area Safe Operating Area<br>8<br>T =25°C<br>80 AMB<br>Minimum Copper<br>Fe ATITL,TIE RT 6 55HTWh SS<br>60<br>TOTEMge Tae D=0.5<br>D=0.5<br>40 Seineni te te ee 4  ec”NCU D=0.2 T<br>Smee | il an UAE AAA<br>D=0.1<br>D=0.2<br>Hii NN Single Pulse 2 Ae<br>20 ay aad D=0.05 mm UE<br>D=0.05<br>Single Pulse<br>eae T A =25°C<br>D=0.1 CASE<br>0 cee ee Te | LU UT 0 Yeaii HAETO sas ul<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>  Collector Current (A)   Collector Current (A)<br>IC IC<br>Thermal Resistance (°C/W) Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


## **Transient Thermal Impedance** 

**Transient Thermal Impedance** 

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MJD31C Document number: DS31625 Rev. 8 - 2 

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**MJD31C** 

## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|Collector-Emitter Breakdown Voltage(Note 10)|BVCEO|100|||V|IC= 30mA,IB= 0|
|Collector Cut-off Current|ICEO|||1|μA|VCB= 60V,IB= 0|
|Collector Cut-off Current<br>~~eee~~|ICES<br>~~eee~~|<br>~~eee~~|<br>~~eee~~|1<br>~~eee~~|μA<br>~~eee~~|VCE= 100V,VEB= 0<br>~~eee~~|
|Emitter Cut-off Current<br>~~eee~~|IEBO<br>~~eee~~<br>~~ee~~|<br>~~eee~~<br>~~ee~~|<br>~~eee~~<br>~~ee~~|1<br>~~eee~~<br>~~ee~~|μA<br>~~eee~~<br>~~ee~~|VEB= 5V,IC= 0<br>~~eee~~|
|Collector-Emitter Saturation Voltage(Note 10)<br>~~ee~~|VCE(sat)<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|1.2<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~|IC= 3.0A,IB= 375mA<br>~~ee~~|
|Base-Emitter Turn-On Voltage(Note 10)<br>~~ee~~|VBE(on)<br>~~ee~~<br>~~ee~~<br>~~OO~~|<br>~~ee~~<br>~~ee~~<br>~~OO~~|<br>~~ee~~<br>~~ee~~<br>~~OO~~|1.8<br>~~ee~~<br>~~ee~~<br>~~OO~~|V<br>~~ee~~<br>~~ee~~|IC= 3A,VCE= 4V<br>~~ee~~|
|DC Current Gain (Note 10)<br>~~Re~~|hFE<br>~~ee ~~<br>~~Re~~<br>~~OO~~|25<br>10<br> ~~ee ~~<br>~~Re~~<br>~~OO~~|<br> ~~ee~~<br>~~Re~~<br>~~OO~~<br>~~ee~~|<br>50<br>~~ee ~~<br>~~Re~~<br>~~OO~~<br>~~ee~~|<br> ~~ee~~<br>~~Re~~|VCE= 4V, IC= 1A<br>VCE= 4V,IC= 3A<br>~~Re~~|
|Current Signal Current Gain<br>~~ee~~|Hfe<br>~~OO~~<br>~~ee~~|20<br>~~OO~~<br>~~ee~~|<br>~~OO~~<br>~~ee~~<br>~~ee~~|<br>~~OO~~<br>~~ee~~<br>~~ee~~|<br>~~ee~~|VCE= 10V,IC= 0.5A,f = 1KHz<br>~~ee~~|
|Current Gain-Bandwidth Product<br>~~ee~~|fT<br>~~ee~~|3.0<br>~~ee~~|<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|MHz<br>~~ee~~|IC= 500mA,VCE= 10V,f = 1MHz<br>~~ee~~|



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**MJD31C** 

## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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1,000 FE tt 1 See oe te eet<br>V CE  = 4V<br>Se eee ee agg I C /I B  = 8 nesteee<br>Fett F nt FE eet HEH<br>TA = 150 ° C<br>ee a a A<br>So TT TIM<br>TA = 85°C<br>TA = 25°C<br>100 [N] 0.1 TA = 150°C Yyf<br>arert T A  = -55°C Mg [A] UaTNT T A  = 85°C TTT aZAI<br>T A  = 25°C<br>\<br>T A  = -55°C<br>eee » Ly Al<br>sell7 Li TT<br>10 CUT UTI LT ISI 0.01 ClimSS<br>1 10 100 1,000 10,000 1 10 100 1,000 il 10,000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 1 Typical DC Current Gain vs. Collector Current Figure 2 Typical Collector-Emitter Saturation Voltage<br>vs. Collector Current<br>1.2 1.2<br>V CE  = 4V IC/IB = 8<br>1.0 mm 1.0 a<br>EnCCIE COTE AIT mr 02A<br>Tn Mari STA<br>0.8 0.8<br>mm PIMnA<br>TA = -55 ° C TA = -55°C<br>0.6 awll rim CLOoCTI 0.6 gyeerstemea aoe aTh<br>TA = 25°C TA = 25°C<br>0.4 Seater T A  = 85°C | 0.4 T A = 85°C 2c<br>|  La ty = aPee| EH<br>Calc CC ett TA = 150°C AT<br>0.2 T A  = 150°C 0.2<br>COTT meetATTA<br>0 AICTE 0 ECCTTEA FAT<br>1 10 100 1,000 10,000 1 10 100 1,000 10,000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 3 Typical Base-Emitter Turn-On Voltage  Figure 4 Typical Base-Emitter Saturation Voltage<br>vs. Collector Current vs. Collector Current<br>1,000<br>f = 1MHz<br>po<br>100 Se Cibo<br>pa<br>a ee<br>Ce<br>10 aSSSR Cobo |<br>oe ee SSS SEH<br>a<br>1 ai A<br>0.1 1 10 100<br>VR, REVERSE VOLTAGE (V)<br>Figure 5 Typical Capacitance Characteristics<br>, DC CURRENT GAIN<br>FE<br>h<br>, BASE-EMITTER SATURATION VOLTAGE (V)<br>BE(SAT)<br>V<br>CE(SAT)<br>VOLTAGE (V)<br>, COLLECTOR-EMITTER<br>SATURATION<br>V<br>CAPACITANCE (pF)<br>, BASE-EMITTER TURN-ON VOLTAGE (V)<br>V<br>BE(ON)<br>**----- End of picture text -----**<br>


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**MJD31C** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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E<br>A<br>b3<br>7°±1°<br>c<br>L3 ae — TO252 (DPAK)<br>Dim  Min  Max  Typ<br>A  2.19  2.39  2.29<br>A1  0.00  0.13  0.08<br>D<br>A2 A2  0.97  1.17  1.07<br>H<br>L4 b  0.64  0.88  0.783<br>b2  0.76  1.14  0.95<br>fo<br>b3  5.21  5.46  5.33<br>ap ====<br>c  0.45  0.58  0.531<br>D  6.00 6.20 6.10<br>e D1  5.21  -  -<br>b(3x) e  -  -  2.286<br>Le b2(2x) === E  6.45 6.70 6.58<br>E1  4.32  -  -<br>0.508<br>Gauge Plane H  9.40 10.41  9.91<br>L  1.40  1.78  1.59<br>E1 D1 Seating Plane L3  0.88  1.27  1.08<br>L4  0.64  1.02  0.83<br>pod! ne L h, A1 | REE a  0°  10°  -<br>2.74REF All Dimensions in mm<br>Ee Ee<br>a<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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**----- Start of picture text -----**<br>
PT X1<br>Y1<br>Dimensions  Value (in mm)<br>C  4.572<br>X  1.060<br>Y2<br>X1  5.632<br>Y  2.600<br>C<br>Y1  5.700<br>“Ld<br>Y2  10.700<br>Y<br>1 X<br>Note:   For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between<br>device Terminals and PCB tracking.<br>**----- End of picture text -----**<br>


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**MJD31C** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated **www.diodes.com** 

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- [Supplier page](https://es.farnell.com/diodes-inc/mjd31c-13/trans-npn-100v-3a-150deg-c-15w/dp/3943270)
---

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