# Bipolar (BJT) Single Transistor, NPN, 60 V, 10 A, 20 W, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2341710/)

**URL**: https://novapart.co/products/MJD3055T4/bipolar-bjt-single-transistor-npn-60-v-10-a-20-w
**SKU**: MJD3055T4
**Manufacturer**: STMICROELECTRONICS
**Price**: €0.3250
**Stock**: 10+
**Lead Time**: 113 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:-; Power Dissipation Pd:20W; DC Collector Current:10A; DC Current Gain hFE:5hFE; Transist

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 20W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | - |
| Transistor Case Style | TO-252 (DPAK) |
| Dc Current Gain Hfe Min | 5hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 10A |
| Collector Emitter Voltage Max | 60V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2341710/)

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## **MJD2955 MJD3055** 

## COMPLEMENTARY POWER TRANSISTORS 

- I STMicroelectronics PREFERRED SALESTYPES 

- I SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") 

- I ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T 

**APPLICATIONS** 

- I GENERAL PURPOSE SWITCHING AND AMPLIFIER 

**DESCRIPTION** The MJD2955 and MJD3055 form complementary PNP-NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. 

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**DPAK TO-252** (Suffix "T4") 

## **INTERNAL  SCHEMATIC  DIAGRAM** 

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## **ABSOLUTE  MAXIMUM  RATINGS** 

|**Symbol**|**Parameter**||**Value**|**Unit**|
|---|---|---|---|---|
|||**NPN**|**MJD3055**||
|||**PNP**|**MJD2955**||
|VCBO|Collector-Base Voltage(IE= 0)||70|V|
|VCEO|Collector-Emitter Voltage(IB= 0)||60|V|
|VEBO|Emitter-Base Voltage(IC= 0)||5|V|
|IC|Collector Current||10|A|
|IB|Base Current||6|A|
|Ptot|Total Dissipation at Tc= 25oC||20|W|
|Tstg|Storage Temperature||-65 to 150|oC|
|Tj|Max. OperatingJunction Temperature||150|oC|



For PNP type voltage and current values are negative. 

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February 2002 

**MJD2955 / MJD3055** 

## **THERMAL  DATA** 

Rthj-case Thermal  Resistance  Junction-case                             Max 6.25 oC/W Rthj-amb Thermal  Resistance  Junction-ambient                        Max 100 oC/W 

## **ELECTRICAL  CHARACTERISTICS** (Tcase = 25[o] C unless otherwise specified) 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ICEX|Collector Cut-off<br>Current   (VBE= -1.5 V)|VCE= 70 V<br>VCE= 70 V                Tj= 150oC|||20<br>2|µA<br>mA|
|ICBO|Collector Cut-off<br>Current (IE= 0)|VCB= 70 V<br>VCB= 70 V                Tj= 150oC|||20<br>2|µA<br>mA|
|ICEO|Collector Cut-off<br>Current(IB= 0)|VCE= 30 V|||50|µA|
|IEBO|Emitter Cut-off Current<br>(IC= 0)|VEB= 5 V|||0.5|mA|
|VCEO(sus)∗|Collector-Emitter<br>Sustaining Voltage<br>(IB= 0)|IC= 30 mA|60|||V|
|VCE(sat)∗|Collector-Emitter<br>Saturation Voltage|IC= 4 A         IB= 0.4 A<br>IC= 10 A       IB= 3.3 A|||1.1<br>8|V<br>V|
|VBE(on)∗|Base-Emitter Voltage|IC= 4 A         VCE= 4 V|||1.8|V|
|hFE∗|DC Current Gain|IC= 4 A         VCE= 4 V<br>IC= 10 A       VCE= 4 V|20<br>5||100||
|fT|Transition Frequency|IC= 0.5 A    VCE= 10 V  f = 500 KHz|2|||MHz|



∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP type voltage and current values are negative. 

## Safe Operating Area 

## Derating Curves 

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2/6 

**MJD2955 / MJD3055** 

DC Current Gain (NPN type) 

DC Transconductance (NPN type) 

Collector-Emitter Saturation Voltage (NPN type) 

DC Current Gain  (PNP type) 

DC Transconductance (PNP type) 

Collector-Emitter Saturation Voltage (PNP type) 

3/6 

**MJD2955 / MJD3055** 

Base-Emitter Saturation Voltage (NPN type) 

Transition Frequency (NPN type) 

Base-Emitter Saturation Voltage (PNP type) 

Transition Frequency (PNP type) 

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**MJD2955 / MJD3055** 

## **TO-252 (DPAK) MECHANICAL DATA** 

|**DIM**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|
|**.**|**MIN.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|2.20||2.40|0.087||0.094|
|A1|0.90||1.10|0.035||0.043|
|A2|0.03||0.23|0.001||0.009|
|B|0.64||0.90|0.025||0.035|
|B2|5.20||5.40|0.204||0.213|
|C|0.45||0.60|0.018||0.024|
|C2|0.48||0.60|0.019||0.024|
|D|6.00||6.20|0.236||0.244|
|E|6.40||6.60|0.252||0.260|
|G|4.40||4.60|0.173||0.181|
|H|9.35||10.10|0.368||0.398|
|L2||0.8|||0.031||
|L4|0.60||1.00|0.024||0.039|
|V2|0o||8o|0o||0o|



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**MJD2955 / MJD3055** 

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 

- © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved 

STMicroelectronics GROUP OF COMPANIES 

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**http://www.st.com** 

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