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MJD2955T4G

Bipolar (BJT) Single Transistor, PNP, 60 V, 10 A, 1.75 W, TO-252 (DPAK), Surface Mount

  • Manufacturer: ONSEMI
  • Product type: Single Bipolar Junction Transistors - BJT
  • Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:2MHz; Power Dissipation Pd:1.75W; DC Collector Current:-10A; DC Current Gain hFE:5hFE; Tra
  • MSL: MSL 1 - Unlimited
  • SVHC: Lead (25-Jun-2025)
  • No. of Pins: 3Pins
  • Product Range: -
  • Qualification: -
  • Power Dissipation: 1.75W
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: PNP
  • Transition Frequency: 2MHz
  • Transistor Case Style: TO-252 (DPAK)
  • DC Current Gain hFE Min: 5hFE
  • Operating Temperature Max: 150°C
  • Continuous Collector Current: 10A
  • Collector Emitter Voltage Max: 60V
Delivery and price
Units per pack 1000
Price 0.269 €
Current stock 500+
Lead time 7 days

Updated at March 14, 2026