# Bipolar (BJT) Single Transistor, PNP, 100 V, 4 A, 12.5 W, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2845305RL/)

**URL**: https://novapart.co/products/MJD253T4G/bipolar-bjt-single-transistor-pnp-100-v-4-a-125-w
**SKU**: MJD253T4G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.1970
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:40MHz; Power Dissipation Pd:12.5W; DC Collector Current:-4A; DC Current Gain hFE:15hFE; Trans

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 12.5W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 40MHz |
| Transistor Case Style | TO-252 (DPAK) |
| Dc Current Gain Hfe Min | 15hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 4A |
| Collector Emitter Voltage Max | 100V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2845305RL/)

## Complementary Silicon MD253 (PNP). Plastic Power Transistors 

## **DPAK−3 for Surface Mount Applications** 

## **www.onsemi.com** 

Designed for low voltage, low−power, high−gain audio amplifier applications. 

## **Features** 

## **4.0 A, 100 V, 12.5 W POWER TRANSISTOR** 

- High DC Current Gain 

- Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) 

- Straight Lead Version in Plastic Sleeves (“−1” Suffix) 

- Low Collector−Emitter Saturation Voltage 

- High Current−Gain − Bandwidth Product 

- Annular Construction for Low Leakage 

- Epoxy Meets UL 94 V−0 @ 0.125 in 

- NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Collector−Base Voltage|VCB|100|Vdc|
|Collector−Emitter Voltage|VCEO|100|Vdc|
|Emitter−Base Voltage|VEB|7.0|Vdc|
|Collector Current − Continuous|IC|4.0|Adc|
|Collector Current − Peak|ICM|8.0|Adc|
|Base Current|IB|1.0|Adc|
|Total Device Dissipation<br>@ TC= 25°C<br>Derate above 25°C|PD|12.5<br>0.1|W<br>W/°C|
|Total Device Dissipation<br>@ TA= 25°C (Note 2)<br>Derate above 25°C<br>~~oo~~|PD<br>~~oo~~|1.4<br>0.011|W<br>W/°C|
|Operating and Storage Junction<br>Temperature Range<br>~~oo~~|TJ, Tstg<br>~~oo~~|−65 to +150|°C|
|ESD − Human Body Model<br>~~oo~~|HBM<br>~~oo~~|3B|V|
|ESD − Machine Model<br>~~oo~~|MM<br>~~oo~~|C|V|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. When surface mounted on minimum pad sizes recommended. 

## **COMPLEMENTARY** 

**==> picture [174 x 89] intentionally omitted <==**

**----- Start of picture text -----**<br>
COLLECTOR COLLECTOR<br>2, 4 2, 4<br>1 1<br>BASE BASE<br>) -&<br>3 3<br>EMITTER EMITTER<br>**----- End of picture text -----**<br>


**==> picture [131 x 101] intentionally omitted <==**

**----- Start of picture text -----**<br>
4<br>4<br>1 [2]<br>123 3<br>IPAK DPAK−3<br>CASE 369D CASE 369C<br>STYLE 1 STYLE 1<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAMS** 

**==> picture [119 x 111] intentionally omitted <==**

**----- Start of picture text -----**<br>
AYWW AYWW<br>J253G J2x3G<br>IPAK DPAK<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>x = 4 or 5<br>G = Pb−Free Package<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2013 **September, 2016 − Rev. 17** 

**MJD243/D** 

**MJD243 (NPN), MJD253 (PNP)** 

## **THERMAL CHARACTERISTICS** 

||**THERMAL CHARACTERISTICS**||||
|---|---|---|---|---|
|Î<br>Î<br>Î|**Characteristic**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>|**Symbol**<br>Î<br>ÎÎÎÎ<br>|**Value**<br>Î<br>ÎÎÎÎ<br>|**Unit**<br>Î<br>ÎÎÎÎ|
||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Thermal Resistance<br>Junction−to−Case<br>Junction−to−Ambient (Note 2)<br><br><br>|Î<br>Î<br><br>ÎÎÎÎ<br>ÎÎÎÎ<br>R�JC<br>R�JA<br><br><br>|Î<br>Î<br><br>ÎÎÎÎ<br>ÎÎÎÎ<br>10<br>89.3<br><br><br>|Î<br>Î<br><br>ÎÎÎÎ<br>ÎÎÎÎ<br>°C/W|



2. When surface mounted on minimum pad sizes recommended. 

## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise|noted)||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Collector−Emitter Sustaining Voltage (Note 3)<br>(IC= 10 mAdc, IB= 0)|VCEO(sus)|100|−|Vdc|
|Collector Cutoff Current<br>(VCB= 100 Vdc, IE= 0)<br>(VCB= 100 Vdc, IE= 0, TJ= 125°C)|ICBO|−<br>−|100<br>100|nAdc<br>�Adc|
|Emitter Cutoff Current<br>(VBE= 7.0 Vdc, IC= 0)|IEBO|−|100|nAdc|
|DC Current Gain (Note 3)<br>(IC= 200 mAdc, VCE= 1.0 Vdc)<br>(IC= 1.0 Adc, VCE= 1.0 Vdc)|hFE|40<br>15|180<br>−|−|
|Collector−Emitter Saturation Voltage (Note 3)<br>(IC= 500 mAdc, IB= 50 mAdc)<br>(IC= 1.0 Adc, IB= 100 mAdc)|VCE(sat)|−<br>−|0.3<br>0.6|Vdc|
|Base−Emitter Saturation Voltage (Note 3)<br>(IC= 2.0 Adc, IB= 200 mAdc)|VBE(sat)|−|1.8|Vdc|
|Base−Emitter On Voltage (Note 3)<br>(IC= 500 mAdc, VCE= 1.0 Vdc)|VBE(on)|−|1.5|Vdc|
|**DYNAMIC CHARACTERISTICS**|||||
|Current−Gain − Bandwidth Product (Note 4)<br>(IC= 100 mAdc, VCE= 10 Vdc, ftest= 10 MHz)|fT|40|−|MHz|
|Output Capacitance<br>(VCB= 10 Vdc, IE= 0, f = 0.1 MHz)|Cob|−|50|pF|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 � s, Duty Cycle � 2%. 

4. fT = ⎪ hFE ⎪• ftest. 

**www.onsemi.com** 

**2** 

**MJD243 (NPN), MJD253 (PNP)** 

**==> picture [489 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
TA TC<br>2.5 25 10<br>500� � s<br>5<br>100��s<br>2 20 2 1�ms<br>1<br>1.5 15 0.5 5�ms dc<br>T A  (SURFACE MOUNT) 0.2 BONDING WIRE LIMITED<br>1 10 0.1 THERMALLY LIMITED @ TC = 25°C<br>T C 0.05 �(SINGLE PULSE)<br>SECOND BREAKDOWN LIMITED<br>0.5 5 CURVES APPLY BELOW<br>0.02<br>RATED VCEO<br>0 0 0.01<br>25 50 75 100 125 150 1 2 5 10 20 50 100<br>T, TEMPERATURE (°C) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>IC, COLLECTOR CURRENT (AMPS)<br>PD, POWER DISSIPATION (WATTS)<br>**----- End of picture text -----**<br>


**Figure 1. Power Derating** 

**Figure 2. Active Region Maximum Safe Operating Area** 

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 

The data of Figure 2 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 3. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 

**==> picture [492 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>0.7<br>D = 0.5<br>0.5<br>0.3 0.2<br>0.2 0.1 R �JC (t) = r(t) � JC P (pk)<br>0.05 R�JC = 10°C/W MAX<br>0.1 D CURVES APPLY FOR POWER<br>0.07 0.02 PULSE TRAIN SHOWN t1<br>0.05 0.01 READ TIME AT t 1 t2<br>0.03 0 (SINGLE PULSE) TJ(pk) - TC = P(pk) �JC(t) DUTY CYCLE, D = t 1 /t 2<br>0.02<br>0.01<br>0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200<br>t, TIME (ms)<br>r(t), TRANSIENT THERMAL<br>RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


**Figure 3. Thermal Response** 

**www.onsemi.com** 

**3** 

**MJD243 (NPN), MJD253 (PNP)** 

**==> picture [505 x 635] intentionally omitted <==**

**----- Start of picture text -----**<br>
NPN PNP<br>MJD243 MJD253<br>500 200<br>300 TJ = 150°C VCE = 1.0 V TJ = 150°C VCE = 1.0 V<br>200 VCE = 2.0 V 10070 25°C VCE = 2.0 V<br>25°C<br>50<br>100<br>70 -�55°C 30 -�55°C<br>50 20<br>30<br>10<br>20<br>7.0<br>5.0<br>10<br>7.0 3.0<br>5.0 2.0<br>0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0<br>IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)<br>Figure 4. DC Current Gain<br>1.4 1.4<br>TJ = 25°C TJ = 25°C<br>1.2 1.2<br>1.0 1.0<br>VBE(sat) @ IC/IB = 10<br>0.8 VBE(sat) @ IC/IB = 10 0.8<br>0.6 VBE @ VCE = 1.0 V 0.6 VBE @ VCE = 1.0 V<br>0.4 IC/IB = 10 0.4 IC/IB = 10<br>5.0<br>5.0<br>0.2 0.2<br>VCE(sat) VCE(sat)<br>0 0<br>0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0<br>4.0<br>IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)<br>Figure 5. “On” Voltages<br>+�2.5<br>+�2.0 *APPLIES FOR IC/IB ≤ hFE/3<br>+�1.5<br>+�1.0 25°C to 150°C<br>+�0.5 *�VC FOR VCE(sat)<br>0<br>-�55°C to 25°C<br>-�0.5<br>-�1.0 25°C to 150°C -�1.0 25°C to 150°C<br>-�1.5 -�1.5<br>-�2.0 �VB FOR VBE -�55°C to 25°C -�2.0 �VB FOR VBE -�55°C to 25°C<br>-�2.5 -�2.5<br>0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0<br>IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)<br>hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN<br>V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS)<br>C)° C)°<br>V, TEMPERATURE COEFFICIENTS (mV/ V, TEMPERATURE COEFFICIENTS (mV/<br>θ θ<br>**----- End of picture text -----**<br>


**Figure 6. Temperature Coefficients** 

**www.onsemi.com** 

**4** 

**MJD243 (NPN), MJD253 (PNP)** 

**==> picture [227 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
VCC<br>+�30 V<br>RC<br>25 �s<br>+11 V RB SCOPE<br>0<br>-�9.0 V 51 D1<br>tr, tf ≤ 10 ns -�4 V<br>DUTY CYCLE = 1.0%<br>RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS<br>�D1 MUST BE FAST RECOVERY TYPE, e.g.:<br>��1N5825 USED ABOVE IB ≈ 100 mA<br>��MSD6100 USED BELOW IB ≈ 100 mA<br>FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES<br>**----- End of picture text -----**<br>


**Figure 7. Switching Time Test Circuit** 

**==> picture [237 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
1K<br>500<br>300 tr<br>200<br>100<br>50<br>30<br>20<br>10 td VCC = 30 V<br>IC/IB = 10<br>5 TJ = 25°C<br>NPN MJD243<br>3<br>2 PNP MJD253<br>1<br>0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10<br>IC, COLLECTOR CURRENT (AMPS)<br>t, TIME (ns)<br>**----- End of picture text -----**<br>


**Figure 8. Turn−On Time** 

**==> picture [237 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
10K<br>5K VCC = 30 V<br>3K ts IC/IB = 10<br>2K IB1 = IB2<br>1K TJ = 25°C<br>500<br>300<br>200<br>100<br>50<br>3020 tf NPN MJD243<br>PNP MJD253<br>10<br>0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10<br>IC, COLLECTOR CURRENT (AMPS)<br>t, TIME (ns)<br>**----- End of picture text -----**<br>


**Figure 9. Turn−Off Time** 

**==> picture [239 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
200<br>TJ = 25°C<br>100<br>Cib<br>70<br>50<br>30<br>20 Cob<br>MJD243 (NPN)<br>MJD253 (PNP)<br>10<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 10. Capacitance** 

**==> picture [240 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
200<br>TJ = 25°C<br>100<br>70 Cib<br>50<br>30<br>20 Cob<br>10<br>1 2 3 5 7 10 20 30 50 70 100<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 11. Capacitance** 

**www.onsemi.com** 

**5** 

**MJD243 (NPN), MJD253 (PNP)** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**||||
|---|---|---|---|
|**Device**|**Package Type**|**Package**|**Shipping**†|
|MJD243G|DPAK−3<br>(Pb−Free)|369C|75 Units / Rail|
|MJD243T4G|DPAK−3<br>(Pb−Free)|369C|2,500 / Tape & Reel|
|NJVMJD243T4G*|DPAK−3<br>(Pb−Free)|369C|2,500 / Tape & Reel|
|MJD253−1G|IPAK<br>(Pb−Free)|369D|75 Units / Rail|
|MJD253T4G|DPAK−3<br>(Pb−Free)|369C|2,500 / Tape & Reel|
|NJVMJD253T4G*|DPAK−3<br>(Pb−Free)|369C|2,500 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

**www.onsemi.com** 

**6** 

**MJD243 (NPN), MJD253 (PNP)** 

## **PACKAGE DIMENSIONS** 

**DPAK (SINGLE GAUGE)** CASE 369C ISSUE F 

**==> picture [152 x 40] intentionally omitted <==**

**----- Start of picture text -----**<br>
NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME<br>Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: INCHES.<br>3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-<br>MENSIONS b3, L3 and Z.<br>**----- End of picture text -----**<br>


**==> picture [481 x 377] intentionally omitted <==**

**----- Start of picture text -----**<br>
A 1. DIMENSIONING AND TOLERANCING PER ASME<br>Y14.5M, 1994.<br>E C 2. CONTROLLING DIMENSION: INCHES.<br>A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-<br>b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLDMENSIONS b3, L3 and Z.<br>FLASH, PROTRUSIONS, OR BURRS. MOLD<br>FLASH, PROTRUSIONS, OR GATE BURRS SHALL<br>4 NOT EXCEED 0.006 INCHES PER SIDE.<br>L3 Z 5. DIMENSIONS D AND E ARE DETERMINED AT THE<br>D DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUMOUTERMOST EXTREMES OF THE PLASTIC BODY.<br>1 2 3 PLANE H.<br>7. OPTIONAL MOLD FEATURE.<br>L4 NOTE 7 DIM MININCHESMAX MILLIMETERSMIN MAX<br>b2 c BOTTOM VIEW A 0.086 0.094 2.18 2.38<br>e SIDE VIEW A1 0.000 0.005 0.00 0.13<br>b b 0.025 0.035 0.63 0.89<br>TOP VIEW 0.005 (0.13) M C b2b3 0.0280.180 0.0450.215 0.724.57 1.145.46<br>c 0.018 0.024 0.46 0.61<br>c2 0.018 0.024 0.46 0.61<br>H Z Z D 0.235 0.245 5.97 6.22<br>E 0.250 0.265 6.35 6.73<br>e 0.090 BSC 2.29 BSC<br>L2 [GAUGE] PLANE C SEATINGPLANE H 0.370 0.410 9.40 10.41<br>L 0.055 0.070 1.40 1.78<br>L1 0.114 REF 2.90 REF<br>L2 0.020 BSC 0.51 BSC<br>L L3 0.035 0.050 0.89 1.27<br>A1 BOTTOM VIEW L4 −−− 0.040 −−− 1.01<br>L1 CONSTRUCTIONSALTERNATE Z 0.155 −−− 3.93 −−−<br>DETAIL A<br>ROTATED 90  CW � STYLE 1:<br>SOLDERING FOOTPRINT* PIN 1. BASE<br>2. COLLECTOR<br>3. EMITTER<br>6.20 3.00 4. COLLECTOR<br>0.244 0.118<br>2.58<br>0.102<br>5.80<br>1.60 6.17<br>0.228<br>0.063 0.243<br>SCALE 3:1<br>� inches [mm] �<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

**www.onsemi.com** 

**7** 

**MJD243 (NPN), MJD253 (PNP)** 

## **PACKAGE DIMENSIONS** 

**IPAK** CASE 369D ISSUE C 

**==> picture [432 x 194] intentionally omitted <==**

**----- Start of picture text -----**<br>
B C NOTES:<br>1. DIMENSIONING AND TOLERANCING PER<br>V R E ANSI Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: INCH.<br>INCHES MILLIMETERS<br>a 4 Z DIMA 0.235 MIN 0.245 MAX 5.97 MIN MAX 6.35<br>S A B 0.250 0.265 6.35 6.73<br>1 2 3 C 0.086 0.094 2.19 2.38<br>D 0.027 0.035 0.69 0.88<br>E 0.018 0.023 0.46 0.58<br>−T− F 0.037 0.045 0.94 1.14<br>SEATING G 0.090 BSC 2.29 BSC<br>PLANE K H 0.034 0.040 0.87 1.01<br>J 0.018 0.023 0.46 0.58<br>K 0.350 0.380 8.89 9.65<br>R 0.180 0.215 4.45 5.45<br>J S 0.025 0.040 0.63 1.01<br>F<br>H V 0.035 0.050 0.89 1.27<br>Z 0.155 −−− 3.93 −−−<br>D 3 PL<br>G 0.13 (0.005) M T STYLE 1:PIN 1. BASE<br>2. COLLECTOR<br>3. EMITTER<br>4. COLLECTOR<br>**----- End of picture text -----**<br>


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**MJD243/D** 

**8** 



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---

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