# Bipolar (BJT) Single Transistor, NPN, 100 V, 8 A, 20 W, TO-252 (DPAK), Surface Mount ![Product image](https://novapart.co/image/farnell:2101375/) **URL**: https://novapart.co/products/MJD122TF/bipolar-bjt-single-transistor-npn-100-v-8-a-20-w **SKU**: MJD122TF **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.2530 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Power Dissipation | 20W | | Dc Current Gain Hfe | 1000hFE | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN | | Transistor Case Style | TO-252 (DPAK) | | Dc Current Gain Hfe Min | 1000hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 8A | | Collector Emitter Voltage Max | 100V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2101375/) ## **Is Now Part of** **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. **==> picture [455 x 294] intentionally omitted <==** **----- Start of picture text -----**
a March 2016
MJD122
NPN Silicon Darlington Transistor
Features
Equivalent Circuit
• D-PAK for Surface Mount Applications C
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications B
• Electrically Similar to Popular TIP122
• Complement to MJD127 1 D-PAK
1.Base 2.Collector 3.Emitter
R1 R2
R1  8k  E
R2  0.12k 
Ordering Information
Part Number Top Mark Package Packing Method
MJD122TF MJD122 TO-252 3L (DPAK) Tape and Reel
_———
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## **Absolute Maximum Ratings** Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. |**Symbol**|**Parameter**|**Value**|**Units**| |---|---|---|---| |VCBO|Collector-Base Voltage|100|V| |VCEO|Collector-Emitter Voltage|100|V| |VEBO|Emitter-Base Voltage|5|V| |IC|Collector Current (DC)|8|A| |ICP|Collector Current (Pulse)|16|A| |IB|Base Current|120|mA| |PC|Collector Dissipation (TC= 25C)|20|W| ||Collector Dissipation (TA= 25C)|1.75|W| |TJ|Junction Temperature|150|C| |TSTG|Storage Temperature|- 65 to 150|C| © 1999 Fairchild Semiconductor Corporation MJD122 Rev. 2.4 www.fairchildsemi.com ## **Electrical Characteristics** Values are at TA = 25°C unless otherwise noted. |Values are at TA = 25°C unless otherwise noted.|Values are at TA = 25°C unless otherwise noted.A = 25°C unless otherwise noted.= 25°C unless otherwise noted..||||| |---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Condition**|**Min.**|**Max.**|**Units**| |VCEO(sus)|Collector-Emitter Sustaining Voltage(1)|IC= 30 mA, IB= 0|100||V| |ICEO|Collector Cut-off Current|VCE= 50 V, IB= 0||10|A| |ICBO|Collector Cut-off Current|VCB= 100 V, IE= 0||10|A| |IEBO|Emitter Cut-off Current|VEB= 5 V, IC= 0||2|mA| |hFE|DC Current Gain(1)|VCE= 4 V, IC= 4 A
VCE= 4 V, IC= 8 A|1000
100|12K|| |VCE(sat)|Collector-Emitter Saturation Voltage(1)|IC= 4 A, IB= 16 mA
IC= 8 A, IB= 80 mA||2
4|V
V| |VBE(sat)|Base-Emitter Saturation Voltage(1)|IC= 8 A, IB= 80 mA||4.5|V| |VBE(on)|Base-Emitter On Voltage(1)|VCE= 4 V, IC= 4 A||2.8|V| |Cob|Output Capacitance|VCB= 10 V, IE= 0
f= 0.1MHz||200|pF| **Note:** 1. Pulse test: pw300 s, duty cycle 2%. © 1999 Fairchild Semiconductor Corporation MJD122 Rev. 2.4 www.fairchildsemi.com 2 ## **Typical Performance Characteristics** **==> picture [426 x 584] intentionally omitted <==** **----- Start of picture text -----**
10k 10
VCE = 4V IC = 250 IB
VBE(sat)
1
V CE (sat)
1k
0.1
1000.1 a 1 10 0.010.1 cE 1 10 100
IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000 10
V CC = 30V
IC=250IB
I B1 =I B2
100 1
tR
tD, VBE(off)=0
101 4 0.010.1 = e
0.1 1 10 100 0.1 1 10
VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance Figure 4. Turn On Time
10 100
VCC=30V
I C =250I B
10
tSTG
1 tF 1
0.1
0.1 a 0.01 ee
0.1 1 10 1 10 100 1000
IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn Off Time Figure 6. Safe Operating Area
1ms
500100s s
5ms
DC
(sat)[V], SATURATION VOLTAGE
, DC CURRENT GAIN CE
FE
h
(sat), V
BE
V
s], TURN ON TIME
[pF], CAPACITANCEob [,ttDR
C
s], TURN OFF TIME
[,tF
tSTG [A], COLLECTOR CURRENTIC
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**Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage** © 1999 Fairchild Semiconductor Corporation MJD122 Rev. 2.4 www.fairchildsemi.com 3 ## **Typical Performance Characteristics** (Continued) **==> picture [187 x 154] intentionally omitted <==** **----- Start of picture text -----**
25
20
15
10
5
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
[W], POWER DISSIPATIONPC
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**==> picture [147 x 11] intentionally omitted <==** **----- Start of picture text -----**
Figure 7. Power Derating Curve
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© 1999 Fairchild Semiconductor Corporation MJD122 Rev. 2.4 www.fairchildsemi.com 4 **==> picture [31 x 8] intentionally omitted <==** **----- Start of picture text -----**
0.10 B
**----- End of picture text -----**
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