# Bipolar (BJT) Single Transistor, NPN, 80 V, 10 A, 50 W, TO-263 (D2PAK), Surface Mount ![Product image](https://novapart.co/image/farnell:2535625/) **URL**: https://novapart.co/products/MJB44H11G/bipolar-bjt-single-transistor-npn-80-v-10-a-50-w **SKU**: MJB44H11G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.5170 **Stock**: 50+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:50MHz; Power Dissipation Pd:50W; DC Collector Current:10A; DC Current Gain hFE:40hFE; Transi ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | AEC-Q101 | | Power Dissipation | 50W | | Transistor Mounting | Surface Mount | | Transistor Polarity | NPN | | Transition Frequency | 50MHz | | Transistor Case Style | TO-263 (D2PAK) | | Dc Current Gain Hfe Min | 40hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 10A | | Collector Emitter Voltage Max | 80V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2535625/) ## MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP) ## Complementary Power Transistors **D[2] PAK for Surface Mount** Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. ## **Features** - Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ 8.0 A - Fast Switching Speeds - Complementary Pairs Simplifies Designs - Epoxy Meets UL 94 V−0 @ 0.125 in - ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V - NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable ## **http://onsemi.com** **SILICON POWER TRANSISTORS 10 AMPERES, 80 VOLTS, 50 WATTS** **MARKING DIAGRAM** **D[2] PAK** B4xH11G **CASE 418B** AYWW **STYLE 1** a ~~.~~ x = 4 or 5 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package - Pb−Free Packages are Available ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Collector−Emitter Voltage|VCEO|80|Vdc| |Emitter−Base Voltage|VEB|5|Vdc| |Collector Current
− Continuous
− Peak|IC|10
20|Adc| |Total Power Dissipation
@ TC= 25°C
Derate above 25°C|PD|50
0.4|W
W/°C| |Total Power Dissipation
@ TA= 25°C
Derate above 25°C|PD|2.0
0.016|W
W/°C| |Operating and Storage Junction
Temperature Range|TJ, Tstg|−55 to 150|°C| ## **THERMAL CHARACTERISTICS** ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |MJB44H11G|D2PAK
(Pb−Free)|50 Units/Rail| |MJB44H11T4G|D2PAK
(Pb−Free)|800/Tape & Reel| |NJVMJB44H11T4G|D2PAK
(Pb−Free)|800/Tape & Reel| |MJB45H11G|D2PAK
(Pb−Free)|50 Units/Rail| |MJB45H11T4G|D2PAK
(Pb−Free)|800/Tape & Reel| |NJVMJB45H11T4G|D2PAK
(Pb−Free)|800/Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2013 **May, 2013 − Rev. 5** **MJB44H11/D** **MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)** ## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)|||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Collector−Emitter Sustaining Voltage (IC= 30 mA, IB= 0)|VCEO(sus)|80|−|−|Vdc| |Collector Cutoff Current (VCE= Rated VCEO, VBE= 0)|ICES|−|−|10|�A| |Emitter Cutoff Current (VEB= 5 Vdc)|IEBO|−|−|50|�A| |**ON CHARACTERISTICS**|||||| |Collector−Emitter Saturation Voltage (IC= 8 Adc, IB= 0.4 Adc)|VCE(sat)|−|−|1.0|Vdc| |Base−Emitter Saturation Voltage (IC= 8 Adc, IB= 0.8 Adc)|VBE(sat)|−|−|1.5|Vdc| |DC Current Gain (VCE= 1 Vdc, IC= 2 Adc)|hFE|60|−|−|−| |DC Current Gain (VCE= 1 Vdc, IC= 4 Adc)||40|−|−|| |**DYNAMIC CHARACTERISTICS**|||||| |Collector Capacitance (VCB= 10 Vdc, ftest= 1 MHz)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11|Ccb|−
−|130
230|−
−|pF| |Gain Bandwidth Product (IC= 0.5 Adc, VCE= 10 Vdc, f = 20 MHz)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11|fT|−
−|50
40|−
−|MHz| |**SWITCHING TIMES**|||||| |Delay and Rise Times(IC= 5 Adc, IB1= 0.5 Adc)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11|td+ tr|−
−|300
135|−
−|ns| |Storage Time(IC= 5 Adc, IB1= IB2= 0.5 Adc)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11|ts|−
−|500
500|−
−|ns| |Fall Time(IC= 5 Adc, IB1= IB2= 0.5 Adc)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11|tf|−
−|140
100|−
−|ns| **==> picture [489 x 169] intentionally omitted <==** **----- Start of picture text -----**
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1 Z�JC(t) = r(t) R�JC P(pk)
0.07 0.05 R �JC = 1.56 ° C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02
0.03 PULSE TRAIN SHOWN t 1
READ TIME AT t1 t2
0.02 0.01 SINGLE PULSE TJ(pk) - TC = P(pk) Z�JC(t) DUTY CYCLE, D = t 1 /t 2
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
**----- End of picture text -----**
**Figure 1. Thermal Response** **http://onsemi.com** **2** ## **MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)** **==> picture [234 x 170] intentionally omitted <==** **----- Start of picture text -----**
100
50
30
20 1.0 ms
100 �s
10
10 �s
5.0
3.0
2.0 TC ≤ 70° C dc
1.0 DUTY CYCLE ≤ 50% 1.0 �s
0.5
0.3
0.2
0.1
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMPS)
**----- End of picture text -----**
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) � 150°C. TJ(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. **Figure 2. Maximum Rated Forward Bias Safe Operating Area** **==> picture [253 x 182] intentionally omitted <==** **----- Start of picture text -----**
TA TC
3.0 60
2.0 40
T C
1.0 20 TA
0 0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
**----- End of picture text -----**
**Figure 3. Power Derating** **http://onsemi.com** **3** **MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)** **==> picture [483 x 607] intentionally omitted <==** **----- Start of picture text -----**
1000 1000
VCE = 4 V VCE = 4 V
100 100
1 V
VCE = 1 V
TJ = 25°C TJ = 25°C
10 10
0.1 1 10 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 4. MJB44H11 DC Current Gain Figure 5. MJB45H11 DC Current Gain
1000 1000
TJ = 125°C
TJ = 125°C 25°C
-�40°C
25°C
100 100
-�40°C
VCE = 1 V
VCE = 1 V
10 10
0.1 1 10 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 6. MJB44H11 Current Gain Figure 7. MJB45H11 Current Gain
versus Temperature versus Temperature
1.2 1.2
1 VBE(sat) 1 VBE(sat)
0.8 0.8
0.6 0.6
IC/IB = 10 IC/IB = 10
0.4 TJ = 25°C 0.4 TJ = 25°C
VCE(sat)
0.2 VCE(sat) 0.2
0 0
0.1 1 10 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN
SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS)
**----- End of picture text -----**
**Figure 8. MJB44H11 On−Voltages** **Figure 9. MJB45H11 On−Voltages** **http://onsemi.com** **4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** ## **D[2] PAK 3** CASE 418B−04 **==> picture [442 x 456] intentionally omitted <==** **----- Start of picture text -----**
ISSUE L
SCALE 1:1 NOTES:
C 1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
E 2. CONTROLLING DIMENSION: INCH.
−B− V 3. 418B−01 THRU 418B−03 OBSOLETE,NEW STANDARD 418B−04.
W
4 INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.340 0.380 8.64 9.65
B 0.380 0.405 9.65 10.29
A C 0.160 0.190 4.06 4.83
S D 0.020 0.035 0.51 0.89
1 2 3 E 0.045 0.055 1.14 1.40
F 0.310 0.350 7.87 8.89
G 0.100 BSC 2.54 BSC
−T− H 0.080 0.110 2.03 2.79
K J 0.018 0.025 0.46 0.64
SEATINGPLANE G J W KL 0.0900.052 0.0720.110 2.291.32 2.791.83
M 0.280 0.320 7.11 8.13
ae H N 0.197 REF 5.00 REF
D 3 PL P 0.079 REF 2.00 REF
R 0.039 REF 0.99 REF
0.13 (0.005) M T B M S 0.575 0.625 14.60 15.88
V 0.045 0.055 1.14 1.40
VARIABLE
CONFIGURATION
ZONE N P
R
U
L L L
M M M
F F F
VIEW W−W VIEW W−W VIEW W−W
1 2 3
STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: STYLE 6:
PIN 1. BASE PIN 1. GATE PIN 1. ANODE PIN 1. GATE PIN 1. CATHODE PIN 1. NO CONNECT
2. COLLECTOR 2. DRAIN 2. CATHODE 2. COLLECTOR 2. ANODE 2. CATHODE
3. EMITTER 3. SOURCE 3. ANODE 3. EMITTER 3. CATHODE 3. ANODE
4. COLLECTOR 4. DRAIN 4. CATHODE 4. COLLECTOR 4. ANODE 4. CATHODE
**----- End of picture text -----**
DATE 17 FEB 2015 ## **MARKING INFORMATION AND FOOTPRINT ON PAGE 2** Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42761B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: D[2] PAK 3 PAGE 1 OF 2** ~~|eee1~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **==> picture [182 x 232] intentionally omitted <==** **----- Start of picture text -----**
D [2] PAK 3
CASE 418B−04
ISSUE L
GENERIC
MARKING DIAGRAM*
xx AYWW
xxxxxxxxG
xxxxxxxxx xxxxxxxxG
AYWW
AWLYWWG AKA
oe
IC Standard Rectifier
xx = Specific Device Code
A = Assembly Location
WL = Wafer Lot
Y = Year
WW = Work Week
G = Pb−Free Package
AKA = Polarity Indicator
**----- End of picture text -----**
DATE 17 FEB 2015 - *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. ## **SOLDERING FOOTPRINT*** **==> picture [147 x 173] intentionally omitted <==** **----- Start of picture text -----**
10.49
8.38
16.155 T L 7
2X
3.504
2X
UE
1.016
5.080
aro
PITCH
DIMENSIONS: MILLIMETERS
**----- End of picture text -----**
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42761B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: D[2] PAK 3 PAGE 2 OF 2** ~~—~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi’s** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. 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