# Bipolar (BJT) Single Transistor, General Purpose, PNP, 200 V, 16 A, 250 W, TO-3, Through Hole
**URL**: https://novapart.co/products/MJ15023/bipolar-bjt-single-transistor-general-purpose-pnp
**SKU**: MJ15023
**Manufacturer**: MULTICOMP PRO
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €3.2500
**Stock**: 10+
## Specifications
| Parameter | Value |
|---|---|
| No. Of Pins | 2Pins |
| Power Dissipation | 250W |
| Dc Current Gain Hfe | 15hFE |
| Transistor Mounting | Through Hole |
| Transistor Polarity | PNP |
| Transition Frequency | 4MHz |
| Transistor Case Style | TO-3 |
| Dc Current Gain Hfe Min | 15hFE |
| Operating Temperature Max | 200°C |
| Continuous Collector Current | 16A |
| Collector Emitter Voltage Max | 200V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:1165922/)
## **Transistor, PNP TO-3**
## **Description:**
Silicon power transistors.
The MJ15023 power transistors designed for high power audio, disk head positioners and other linear applications.
## **Features:**
- High safe operating area (100% tested) - 2A at 80V
- High DC current gain = hFE = 15 (min.) at IC = 8A DC
- Pb-free packages
## **Maximum Ratings**
|**Maximum Ratings**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Collector-Emitter Voltage|VCEO|200|V DC|
|Collector-Base Voltage|VCBO|350||
|Emitter-Base Voltage|VEBO|5||
|Collector-Emitter Voltage|ICEX|400||
|Collector Current - Continuous
- Peak(Note 1)|IC|16
30|A DC|
|Base Current-Continuous|IB|5||
|Total Power Dissipation at TC= 25°C
Derate above 25°C|PD|250
1.43|W
W/°C|
|Operating and Storage Junction Temperature Range|TJ, TStg|-65 to +200|°C|
## **Thermal Characteristics**
|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max.**|**Unit**|
|Thermal Resistance Junction to Case|RθJC|0.7|°C/W|
Max. ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤10%
Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro
18/09/19 V1.0
Page <1>
## **Transistor, PNP TO-3**
## **Electrical Characteristics (TC = 25°C unless otherwise noted)**
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|---|---|---|---|---|
|**OffCharacteristics**|||||
|Collector-Emitter Sustaining Voltage (Note 2)
(lC= 100mA DC, lB= 0)|VCEO (sus)|200|-|-|
|Collector Cut off Current
(VCE= 200V DC, VBE(off) = 1.5V DC)|ICEX|-|250|µA DC|
|Collector Cut off Current
(VCE= 150V DC, IB= 0)|ICEO|-|500||
|Emitter Cut off Current
(VCE= 5V DC, IB= 0)|IEBO|-|||
|**SecondBreakdown**|||||
|Second Breakdown Collector Current with Base Forward Biased
(VCE= 50V DC, t = 0.5s (Non-repetitive)
(VCE= 80V DC, t = 0.5s (Non-repetitive)|IS/b|5
2|-
-|A DC|
|**OnCharacteristic**|||||
|DC Current Gain
(lC= 8A DC, VCE= 4V DC)
(lC= 16A DC, VCE= 4V DC)|hFE|15
5|60
-|-|
|Collector-Emitter Saturation Voltage
(lC= 8A DC, IB= 0.8A DC)
(lC= 16A DC, IB= 3.2A DC)|VCE (sat)|-|1.4
4|V DC|
|Base-Emitter On Voltage
(lC= 8A DC, VCE= 4V DC)|VBE (on)|-|2.2||
|**DynamicCharacteristics**|||||
|Current-Gain Bandwidth Product
(IC= 1A DC, VCE= 10V DC, ftest= 1MHz)|fT|4|-|MHz|
|Output Capacitance
(VCB= 10V DC, IE= 0, ftest= 1MHz)|COB|-|600|pF|
1. Pulse Test: Pulse Width = 300μs, Duty Cycle ≤2%
Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro
18/09/19 V1.0
Page <2>
## **Transistor, PNP TO-3**
## **Active Region DC Safe Operating Area**
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**----- Start of picture text -----**
Collector Current (Amperes)
IC,
**----- End of picture text -----**
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data is based on TJ (pk) = 200°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
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**----- Start of picture text -----**
VCE, Collector-Emitter Voltage (Volts)
**----- End of picture text -----**
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**----- Start of picture text -----**
Capacitances
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**Current - Gain - Bandwidth Product**
**==> picture [202 x 158] intentionally omitted <==**
**----- Start of picture text -----**
TLL LLL Ly ven
2 tT TTT oy
6 TTT TTP TTP
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233
H E LEETTETT Tt
0.1 0.3 0.5 1.0 2.0
IC, Collector Current (Amperes)
Product (MHz)
Current - Gain - Bandwidth
fT,T,
**----- End of picture text -----**
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**----- Start of picture text -----**
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0.1 0.3 0.5 1.0
VR, Reverse Voltage (Volts)
Product (MHz)
C, Capacitance (pF)
Current - Gain - Bandwidth
fT,T,
**----- End of picture text -----**
**==> picture [192 x 186] intentionally omitted <==**
**----- Start of picture text -----**
DC Current Gain
a —88 Ty =100°° VCE
200 nn er
T_T =
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ee,
a
of | | | ||tI| | | | | t |
aoL_Lo.2neTTT0.5 1.0 Tt2.0 5.0
IC, Collector Current (Amperes)
, DC Current Gain
FE
h
**----- End of picture text -----**
**==> picture [193 x 185] intentionally omitted <==**
**----- Start of picture text -----**
" On " Voltages
14
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EE ee eee -
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IC, Collector Current (Amperes)
V, Voltage (Volts)
**----- End of picture text -----**
Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro
18/09/19 V1.0
Page <3>
## **Transistor, PNP TO-3**
## **Dimensions Dimensions Min. Max.** A 1.55 (39.37) Reference B - 1.05 (26.67) C 0.25 (6.35) 0.335 (8.51) Seating Plane D 0.038 (0.97) 0.043 (1.09) E 0.055 (1.4) 0.07 (1.77) G 0.43 (10.92) BSC H 0.215 (5.46) BSC Ll , L K 0.44 (11.18) 0.48 (12.19) L 0.665 (16.89) BSC N - 0.83 (21.08) Q 0.151 (3.84) 0.165 (4.19) =[1]] (olt.8 U 1.187 (30.15) BSC cmH Oy | acai V 0.131 (3.33) 0.188 (4.77) es ~~a=~~ **Pin Configuration** Dimensions : Inches (Millimetres) Pin 1. Base 2. Emitter Collector (Case)
## **Part Number Table**
|**Description**|**Part Number**|
|---|---|
|Transistor, PNP, TO-3|MJ15023|
**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019.
Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro
18/09/19 V1.0
Page <4>
## Links
- [View this product on Novapart](https://novapart.co/products/MJ15023/bipolar-bjt-single-transistor-general-purpose-pnp)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/multicomp/mj15023/transistor-pnp-to-3/dp/1165922)
---
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