# Bipolar (BJT) Single Transistor, Audio, PNP, 140 V, 20 A, 250 W, TO-3, Through Hole ![Product image](https://novapart.co/image/farnell:9556478/) **URL**: https://novapart.co/products/MJ15004G/bipolar-bjt-single-transistor-audio-pnp-140-v-20-a **SKU**: MJ15004G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €3.1700 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-140V; Transition Frequency ft:2MHz; Power Dissipation Pd:250W; DC Collector Current:-20A; DC Current Gain hFE:150hFE; Trans ## Specifications | Parameter | Value | |---|---| | Msl | - | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 2Pins | | Product Range | - | | Qualification | - | | Power Dissipation | 250W | | Transistor Mounting | Through Hole | | Transistor Polarity | PNP | | Transition Frequency | 2MHz | | Transistor Case Style | TO-3 | | Dc Current Gain Hfe Min | 150hFE | | Operating Temperature Max | 200°C | | Continuous Collector Current | 20A | | Collector Emitter Voltage Max | 140V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:9556478/) ## MJ15003 (NPN), MJ15004 (PNP) ## Complementary Silicon Power Transistors The MJ15003 and MJ15004 are power transistors designed for high power audio, disk head positioners and other linear applications. ## **http://onsemi.com** ## **Features** - High Safe Operating Area - For Low Distortion Complementary Designs - High DC Current Gain - These Devices are Pb−Free and are RoHS Compliant* **20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS, 250 WATTS** **==> picture [477 x 215] intentionally omitted <==** **----- Start of picture text -----**
SCHEMATIC
MAXIMUM RATINGS
PNP NPN
Rating Symbol Value Unit
CASE 3 CASE 3
Collector−Emitter Voltage VCEO 140 Vdc
Collector−Base Voltage VCBO 140 Vdc
Emitter−Base Voltage VEBO 5 Vdc 1 1
BASE BASE
Collector Current − Continuous IC 20 Adc
Base Current − Continuous IB 5 Adc EMITTER 2 EMITTER 2
Emitter Current − Continuous IE 25 Adc
Total Power Dissipation @ TC = 25 ° C PD 250 W
Derate above 25 ° C 1.43 W/ ° C
3 TO−204AA (TO−3)
Operating and Storage Junction TJ, Tstg –65 to +200 ° C CASE 1−07
Temperature Range STYLE 1
Sire
Stresses exceeding Maximum Ratings may damage the device. Maximum 2
Ratings are stress ratings only. Functional operation above the Recommended 1
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
**----- End of picture text -----**
## **MARKING DIAGRAM** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Thermal Resistance, Junction−to−Case|R JC|0.70|°C/W| |Maximum Lead Temperature for Soldering
Purposes 1/16″from Case for
10 secs|TL|265|°C| MJ1500x = Device Code x = 3 or 4 MJ1500xG G = Pb−Free Package AYYWW A = Location Code MEX YY = Year WW = Work Week MEX = Country of Orgin - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **ORDERING INFORMATION Device Package Shipping** MJ15003G TO−204AA 100 Units/Tray (Pb−Free) MJ15004G TO−204AA 100 Units/Tray (Pb−Free) ~~Et~~ Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2013 **September, 2013 − Rev. 16** **MJ15003/D** **MJ15003 (NPN), MJ15004 (PNP)** ## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||| |Collector Emitter Sustaining Voltage (Note 1)
(IC= 200 mAdc, IB= 0)|VCEO(sus)|140|−|Vdc| |Collector Cutoff Current
(VCE= 140 Vdc, VBE(off)= 1.5 Vdc)
(VCE= 140 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)|ICEX|−
−|100
2|�Adc
mAdc| |Collector Cutoff Current
(VCE= 140 Vdc, IB= 0)|ICEO|−|250|�Adc| |Emitter Cutoff Current
(VEB= 5 Vdc, IC= 0)|IEBO|−|100|�Adc| |**SECOND BREAKDOWN**||||| |Second Breakdown Collector Current with Base Forward Biased
(VCE= 50 Vdc, t = 1 s (non repetitive))
(VCE= 100 Vdc, t = 1 s (non repetitive))|IS/b|5.0
1.0|−
−|Adc| |**ON CHARACTERISTICS**||||| |DC Current Gain
(IC= 5 Adc, VCE= 2 Vdc)|hFE|25|150|−| |Collector Emitter Saturation Voltage
(IC= 5 Adc, IB= 0.5 Adc)|VCE(sat)|−|1.0|Vdc| |Base Emitter On Voltage
(IC= 5 Adc, VCE= 2 Vdc)|VBE(on)|−|2.0|Vdc| |**DYNAMIC CHARACTERISTICS**||||| |Current Gain — Bandwidth Product
(IC= 0.5 Adc, VCE= 10 Vdc, ftest= 0.5 MHz)|fT|2.0|−|MHz| |Output Capacitance
(VCB= 10 Vdc, IE= 0, ftest= 1 MHz)|cob|−|1000|pF| 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle � 2%. ## **TYPICAL CHARACTERISTICS MJ15003G (NPN)** **==> picture [490 x 172] intentionally omitted <==** **----- Start of picture text -----**
100 0.8
IC/IB = 10 150 ° C
150 ° C VCE = 2 V 0.7
25 ° C 0.6 25 ° C
0.5
−55 ° C
−55 ° C 0.4
0.3
0.2
0.1
10 0
0.1 1 10 100 0.1 1 10 100
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
VOLTAGE (V)
, DC CURRENT GAIN
, COLL−EMIT SATURATION
FE
h
CE(sat)
V
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**Figure 1. DC Current Gain** **Figure 2. Collector−Emitter Saturation Voltage** **http://onsemi.com** **2** **MJ15003 (NPN), MJ15004 (PNP)** ## **TYPICAL CHARACTERISTICS MJ15003G (NPN)** **==> picture [490 x 173] intentionally omitted <==** **----- Start of picture text -----**
1.6 100
1.4 IC/IB = 10
1.2
100 mSec
10
1.0
−55 ° C
0.8 1.0 Sec
0.6 25 ° C
1
0.4 150 ° C
0.2
0 0.1
0.1 1 10 100 1 10 100 1,000
IC, COLLECTOR CURRENT (A) VCE, COLLECTOR EMITTER VOLTAGE (V)
VOLTAGE (V)
, BASE−EMIT SATURATION
, COLLECTOR CURRENT (A)
BE(sat) IC
V
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**Figure 3. Base−Emitter Saturation Voltage** **Figure 4. Safe Operating Area** ## **TYPICAL CHARACTERISTICS MJ15004G (PNP)** **==> picture [491 x 382] intentionally omitted <==** **----- Start of picture text -----**
1,000 1.0
VCE = 2 V 0.9 IC/IB = 10
25 ° C
150 ° C 0.8
0.7
100 −55 ° C 0.6 150 ° C
−55 ° C
0.5
25 ° C
0.4
10
0.3
0.2
0.1
1 0
0.1 1 10 100 0.1 1 10 100
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 5. DC Current Gain Figure 6. Collector−Emitter Saturation Voltage
1.4 100
1.2 IC/IB = 10
1.0 100 mSec
−55 ° C 10
0.8 25 ° C
1.0 Sec
0.6
150 ° C
1
0.4
0.2
0 0.1
0.1 1 10 1 10 100 1,000
IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V)
VOLTAGE (V)
, DC CURRENT GAIN
, COLL−EMIT SATURATION
FE
h
CE(sat)
V
VOLTAGE (V)
, BASE−EMIT SATURATION
, COLLECTOR CURRENT (A)
BE(sat) IC
V
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**Figure 7. Base−Emitter Saturation Voltage** **Figure 8. Safe Operating Area** **http://onsemi.com** **3** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **DATE 05/18/1988** ## **TO−204 (TO−3) CASE 1−07 ISSUE Z** ## **SCALE 1:1** **==> picture [388 x 168] intentionally omitted <==** **----- Start of picture text -----**
A NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
N Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
, pe C 3. ALL RULES AND NOTES ASSOCIATED WITH
−T− SEATING REFERENCED TO-204AA OUTLINE SHALL APPLY.
E PLANE
INCHES MILLIMETERS
an D 2 PL K — DIM MIN MAX — MIN MAX
0.13 (0.005) M T Q M Y [M] AB ---1.550 REF1.050 ---39.37 REF26.67
a C 0.250 0.335 e 6.35 8.51
U D 0.038 0.043 0.97 1.09
−Y− E 0.055 0.070 1.40 1.77
V L G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
2 K 0.440 0.480 11.18 12.19
G B L 0.665 BSC 16.89 BSC
H 1 N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
−Q− — V 0.131 0.188 3.33 4.77
0.13 (0.005) M T Y M
**----- End of picture text -----**
**==> picture [334 x 67] intentionally omitted <==** **----- Start of picture text -----**
STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:
PIN 1. BASE PIN 1. BASE PIN 1. GATE PIN 1. GROUND PIN 1. CATHODE
2. EMITTER 2. COLLECTOR 2. SOURCE 2. INPUT 2. EXTERNAL TRIP/DELAY
CASE: COLLECTOR CASE: EMITTER CASE: DRAIN CASE: OUTPUT CASE: ANODE
STYLE 6: STYLE 7: STYLE 8: STYLE 9:
PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE #1 PIN 1. ANODE #1
2. EMITTER 2. OPEN 2. CATHODE #2 2. ANODE #2
CASE: COLLECTOR CASE: CATHODE CASE: ANODE CASE: CATHODE
**----- End of picture text -----**
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