# Bipolar (BJT) Single Transistor, General Purpose, NPN, 140 V, 20 A, 250 W, TO-3, Through Hole
**URL**: https://novapart.co/products/MJ15003/bipolar-bjt-single-transistor-general-purpose-npn
**SKU**: MJ15003
**Manufacturer**: MULTICOMP PRO
**Price**: €1.5800
**Stock**: 50+
**Lead Time**: 141 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2Pins |
| Product Range | Multicomp Pro Bipolar NPN Single Transistors |
| Qualification | - |
| Power Dissipation | 250W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | 2MHz |
| Transistor Case Style | TO-3 |
| Dc Current Gain Hfe Min | 25hFE |
| Operating Temperature Max | 200°C |
| Continuous Collector Current | 20A |
| Collector Emitter Voltage Max | 140V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3473374/)
**Silicon Complimentary Power Transistor VCEO 140V, IC 20A, 250W, TO-3**
## **Features**
High DC Current Gain - hFE = 1000 (Min.) @ lc=25A DC
hFE = 400 (Min) @ lc= 50 Adc
2. Curves to 100 A (Pulsed)
3. Diode Protection to Rated lc
4. Monolithic Construction with Built-In Base-Emitter Shunt Resistor
5. Junction Temperature to +200°C
**APPLICATIONS:** For use as output devices in complementary general purpose amplifier applications.
## **ABSOLUTE MAXIMUM RATINGS** (Ta = 25°C)
|**ABSOLUTE MAXIMUM RATINGS**(Ta = 25°C)a = 25°C)= 25°C)||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Units**|
|Collector - Emitter Voltage|VCEO|140|V DC|
|Collector - Base Voltage|VCBO|140|V DC|
|Emitter Base Voltage|VEBO|5|V DC|
|Collector Current - Continuous|IC|20|ADC|
|Base Current - Continuous|IB|5|ADC|
|Emitter Current - Continuous|IE|25|ADC|
|Total Power Dissipation @ TC 25°C
Derate above 25°C|PD|250
1.43|Watts
W/°C|
|Operatingand Storage Junction Temperature Range|TJ, Tstg|-65°C to +200°C|°C|
## **Thermal Characteristics**
|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Thermal Resistance, Junction to case|Rj-c|0.7|°C/W|
|Maximum Lead Temperature for Soldering Purposes
1/16 from case for ≤ 10 seconds|TL|265|°C|
Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro
Page <1> 03/06/20 V1.0
## **Silicon Complimentary Power Transistor VCEO 140V, IC 20A, 250W, TO-3**
## **Electrical Characteristics at TA = 25°C unless otherwise specified)**
|**Description**|**Symbol**|**Min**|**Max**|**Units**|
|---|---|---|---|---|
|**Off Characteristics**|||||
|Collector-Emitter Sustaining Voltage (1)
(IC= 200mADC, IB= 0)|VCEO(sus)|140|-|V DC|
|Collector Cut Off Current
(VCE= 140V DC, VBE(off)= 1.5 VDC
(VCE= 140V DC, VBE(off)= 1.5 VDC,TC= 150°C|ICEX|-
-|100
2|A DC
mA DC|
|Emitter Cut Off Current
(VCE= 140V DC, IB= 0)|lCEO|-|250|A DC|
|Emitter Cut Off Current
(VEB= 5V DC, IC= 0)|IEBO|-|100|A DC|
|**Second Breakdown**|||||
|Second Breakdown Collector Current With Base Forward Baised
(VCE= 50V DC, t = 1s (non repetitive))
(VCE= 100V DC, t = 1s (non repetitive))|IS/b|5
1|-
-|A DC|
|**On Characteristics**|||||
|DC Current Gain
(IC= 5A DC, VCE= 2 VDC|hFE|25|150||
|Collector-Emitter Saturation Voltage
(IC= 5A DC, IB= 0.5 ADC|VCE(sat)|-|1|V DC|
|Base-Emitter on Voltage
(IC= 5A DC, VCE= 2 ADC|VBE(on)|-|2|V DC|
|**Dynamic Characteristics**|||||
|Current Gain - Bandwidth Product
(IC= 0.5 Adc, VCE= 10V dc, ftest= 0.5 MHz)|fT|2|-|MHz|
|Output Capacitance
(VCB= 10 Vdc, IE= 0, ftest= 1 MHz)|COb|-|1000|pF|
(1) Pulse Test: Pulse Width = 300s, Duty Cycle ≤ 2%
## **Typical Characteristics Curves**
Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro
03/06/20 V1.0
Page <2>
## **Silicon Complimentary Power Transistor VCEO 140V, IC 20A, 250W, TO-3**
## **Package Details**
**==> picture [99 x 8] intentionally omitted <==**
**----- Start of picture text -----**
Dimensions : Millimetres
**----- End of picture text -----**
|Dim|Min.|Max.|
|---|---|---|
|A|-|39.37|
|B|-|22.22|
|C|6.35|8.5|
|D|0.96|1.09|
|E|-|1.77|
|F|29.9|30.4|
|G|10.69|11.18|
|H|5.2|5.72|
|J|16.64|17.15|
|K|11.15|12.25|
|L|-|26.67|
|M|3.84|4.19|
## **Part Number Table**
|**Part Number Table**||
|---|---|
|**Description**|**Part Number**|
|Silicon High Power Transistor, NPN, 140V, 20A, TO-3|MJ15003|
|Silicon High Power Transistor, PNP, 140V, 20A, TO-3|MJ15004|
**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019.
Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro
03/06/20 V1.0
Page <3>
## Links
- [View this product on Novapart](https://novapart.co/products/MJ15003/bipolar-bjt-single-transistor-general-purpose-npn)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/multicomp-pro/mj15003/trans-bipolar-npn-140v-20a-to/dp/3473374)
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