# Bipolar (BJT) Single Transistor, NPN, 120 V, 50 A, 300 W, TO-3, Through Hole

![Product image](https://novapart.co/image/farnell:1165907/)

**URL**: https://novapart.co/products/MJ11032../bipolar-bjt-single-transistor-npn-120-v-50-a-300-w
**SKU**: MJ11032..
**Manufacturer**: MULTICOMP PRO
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €4.3600
**Stock**: 100+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 2Pins |
| Power Dissipation | 300W |
| Dc Current Gain Hfe | 1000hFE |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transistor Case Style | TO-3 |
| Dc Current Gain Hfe Min | 1000hFE |
| Operating Temperature Max | 200°C |
| Continuous Collector Current | 50A |
| Collector Emitter Voltage Max | 120V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1165907/)

## **Darlington Power Transistors** 

## **Features** 

**NPN PNP** MJ11032 MJ11033 50 Amperes Complementary Silicon Power Darlington Transistors 120V 300W 

- High Gain Darlington performance 

- High DC Current Gain:  hFE = 1,000 (Minimum) at Ic = 25A, hFE = 400 (Minimum) at Ic = 50A 

- Monolithic construction with built-in Base-Emitter Shunt Resistor 

Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications 

## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|**Unit**|
|Collector - Emitter Voltage|Vceo|120|V|
|Collector - Base Voltage|Vcbo|||
|Emitter - Base Voltage|Vebo|5||
|Collector Current  - Continuous<br>- Peak|Ic<br>Icm|50<br>100|A|
|Base Current|Ib|2||
|Total Power Dissipation  Tc= 25°C<br>Derate above +25°C|Pd|300<br>1.71|W<br>W / °C|
|Operatingand Storage Junction Temperature Range|Tj, TsTg|-65 to +200|°C|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Maximum**|**Unit**|
|Thermal Resistance Junction to Case|Rθjc|0.584|°C / W|



## **Electrical Characteristics (Tcase = 25°C unless otherwise specified)** 

|**Characteristic**|**Symbol**|**Minimum**|**Maximum**|**Unit**|
|---|---|---|---|---|
|**OFF Characteristics**|||||
|Collector - Emitter Sustaining Voltage (1)<br>(Ic= 100mA, Ib= 0)|VCEO (sus)|120|-|V|
|Collector Cut off Current<br>(Vce= 50V, Ib= 0)|Iceo|-|2|mA|
|Collector - Emitter Leakage Current<br>(Vce= 120V, Rbe= 1kΩ)<br>(Vce= 120V, Rbe= 1kΩ, Tc= 125°C)|IceR|-|2<br>10||
|Emitter Cut off Current<br>(Veb= 5V, Ic= 0)|Iebo|-|5||



Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

15/04/20 V1.0 

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## **Darlington Power Transistors** 

|**Characteristic**|**Symbol**|**Minimum**|**Maximum**|**Unit**|
|---|---|---|---|---|
|**ON Characteristics(1)**|||||
|DC Current Gain<br>(Ic= 25A, Vce= 5V)<br>(Ic= 50A, Vce= 5V)|hFE|1,000<br>400|18,000|-|
|Collector - Emitter Saturation Voltage<br>(Ic= 25A, Ib= 250mA)<br>(Ic= 50A, Ib= 500mA)|VCE (sat)|-|2.5<br>3.5|V|
|Base - Emitter Saturation Voltage<br>(Ic= 25A, Ib= 200mA)<br>(Ic= 50A, Ib= 300mA)|VBE (sat)|-|3<br>4.5||
|**Dynamic Characteristics**|||||
|Small-Signal Current Gain<br>(Ic= 10A, Vce= 3V, f = 1kHz)||hfe||4|-|-|



(1) Pulse Test : Pulse Width = 300μs, Duty Cycle ≤2% 

(2) fT = |hfe| • ftest 

## **Internal Schematic Diagram** 

**==> picture [155 x 20] intentionally omitted <==**

**----- Start of picture text -----**<br>
NPN PNP<br>MJ11032 MJ11033<br>**----- End of picture text -----**<br>


Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

15/04/20 V1.0 

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## **Darlington Power Transistors** 

There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown safe operating area curves indicate Ic - Vce limits of the transistor that must be observed for reliable operation i.e, the transistor must not be subjected to greater dissipation than the curves indicate 

The data of SOA curve is based on TJ(PK) = 200°C; Tc is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(PK) ≤200°C, At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown 

## **Specification Table** 

|**IC (av)**<br>**maximum**<br>**(A)**|**Vceo**<br>**maximum**<br>**(V)**|**hFE**<br>**minimum**<br>**at Ic = 25 A**|**Ptot**<br>**at 25°C**<br>**(W)**|**Package**|**Type**|**Part Number**|
|---|---|---|---|---|---|---|
|50|120|1,000|300|TO-3|NPN|MJ11032|
||||||PNP|MJ11033|



## **Diagram** 

|**Diagram**||||||
|---|---|---|---|---|---|
|||**Dimensions**|**Minimum**|**Maximum**||
||5|A|38.75||39.96|
|Cj-<br>_hG<br>FT<br>0F||B<br>C<br>D|19.28<br>7.96<br>11.18||22.23<br>9.28<br>12.19|
||H|E|25.2||26.67|
|||F|0.92||1.09|
|4||G|1.38||1.62|
|||H|29.9||30.4|
|=||I<br>J|16.64<br>3.88||17.3<br>4.36|
|||K|10.67||11.18|
|**Pin**1. Base|||Dimensions : Millimetres||Dimensions : Millimetres|
|2. Emitter||||||
|Collector (Case)||||||



**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. 

Newark.com/multicomp-pro 

Farnell.com/multicomp-pro Element14.com/multicomp-pro 

15/04/20 V1.0 

Page <3> 



## Links

- [View this product on Novapart](https://novapart.co/products/MJ11032../bipolar-bjt-single-transistor-npn-120-v-50-a-300-w)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/multicomp-pro/mj11032/darlington-transistor-to-3/dp/1165907)
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