# DARLINGTON TRANSISTOR, NPN, 850V, TO-3

![Product image](https://novapart.co/image/farnell:1713166/)

**URL**: https://novapart.co/products/MJ10025/darlington-transistor-npn-850v-to-3
**SKU**: MJ10025
**Manufacturer**: SOLID STATE
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €7.5100
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 2Pins |
| Power Dissipation | 250W |
| Dc Current Gain Hfe | 50hFE |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transistor Case Style | TO-3 |
| Dc Current Gain Hfe Min | 50hFE |
| Operating Temperature Max | 200°C |
| Continuous Collector Current | 20A |
| Collector Emitter Voltage Max | 850V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1713166/)

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| SOLID STATE INC.<br>| 46BLOOMFIEL FARRAN D , STREETNEW JERSEY 07003 www.solidstateinc.com<br>i<br>NPN SILICON POWERSWITCHMODE DARLINGTONSERIES TRANSISTORS SILICON POWERSWITCHMODE DARLINGTONSERIES TRANSISTORS POWERSWITCHMODE DARLINGTONSERIES TRANSISTORSSWITCHMODE DARLINGTONSERIES TRANSISTORS DARLINGTONSERIES TRANSISTORSSERIES TRANSISTORS TRANSISTORS<br>The MJ10024WITH andBASE-EMITTER MJ10025 MJ10024WITH andBASE-EMITTER MJ10025WITH andBASE-EMITTER MJ10025 andBASE-EMITTER MJ10025BASE-EMITTER MJ10025 MJ10025 darlington SPEEDUP transistors DIODE are SPEEDUP transistors DIODE are transistors DIODE are DIODE are are designed<br>for high-voltage, high-voltage, high-speed, power switching in inductive circuits<br>where fail time is critical. They are particularly suited for line oper<br>-ated switchmode applications such as:<br>FEATURES:<br>*Continuous Collector Current - 1, = 20A = 20A 20A<br>*Switching Regulators<br>*Inverters<br>*Solenoid and Relay Drivers and Relay Drivers Relay Drivers Drivers<br>*AC and DC Motor Controls<br>MAXIMUM RATINGS sro ss<br>Characteristic Symbol | mJ100z4 | mJ10025 |Unit|Unit||<br>Coliector-Emitter Voltage Veey | 1000 1200 Vv<br>Collector-Emitter Voltage Voltage 750 850 Vv<br>Emitter-Base Voltage 8.0 Vv<br>Collector Current-Continuous Current-Continuous 20 A<br>~Peak 40<br>Base current current le 10 A |<br>Total a eO ——<br>Power Dissipation @T,=25°C 250 Ww<br>@T,= 100°C 143 w<br>Derate above 25°C above 25°C 25°C 1.43 wre<br>Operating and Storage Junction Ty iTstc6Tstc6 °C<br>Temperature Range Range - 65 to +200 65 to +200 to +200 +200 |<br>**----- End of picture text -----**<br>


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i Ta<br>NPN SILICON POWERSWITCHMODE DARLINGTONSERIES TRANSISTORS SILICON POWERSWITCHMODE DARLINGTONSERIES TRANSISTORS POWERSWITCHMODE DARLINGTONSERIES TRANSISTORSSWITCHMODE DARLINGTONSERIES TRANSISTORS DARLINGTONSERIES TRANSISTORSSERIES TRANSISTORS TRANSISTORS |asNPN ||<br>The MJ10024WITH andBASE-EMITTER MJ10025 MJ10024WITH andBASE-EMITTER MJ10025WITH andBASE-EMITTER MJ10025 andBASE-EMITTER MJ10025BASE-EMITTER MJ10025 MJ10025 darlington SPEEDUP transistors DIODE are SPEEDUP transistors DIODE are transistors DIODE are DIODE are are designed |t MJ10024 |<br>for high-voltage, high-voltage, high-speed, power switching in inductive circuits MJ10025 |<br>where fail time is critical. They are particularly suited for line oper<br>-ated switchmode applications such as:<br>FEATURES: nn<br>*Continuous Collector Current - 1, = 20A = 20A 20A<br>*Switching Regulators 20 AMPERE<br>*Inverters POWER DARLINGTON<br>*Solenoid and Relay Drivers and Relay Drivers Relay Drivers Drivers TRANSISTORS |<br>*AC and DC Motor Controls 750-850 VOLTS |<br>MAXIMUM RATINGS sro ss 250ee WATTS _|<br>Characteristic Symbol | mJ100z4 | mJ10025 |Unit|Unit|| : a<br>Coliector-Emitter Voltage Veey | 1000 1200 Vv :<br>Collector-Emitter Voltage Voltage 750 850 Vv (= |<br>Emitter-Base Voltage 8.0 Vv )a<br>Collector Current-Continuous Current-Continuous 20 A |<br>~Peak 40 TO-3 4<br>Base current current le 10 A | oe :<br>Total a eO —— ~<br>Power Dissipation @T,=25°C 250 Ww ol<br>@T,= 100°C 143 w | acarseat} ¢<br>Derate above 25°C above 25°C 25°C 1.43 wre ae F<br>Operating and Storage Junction Ty iTstc6Tstc6 °C HK<br>Temperature Range Range - 65 to +200 65 to +200 to +200 +200 | 1<br>I" 2 ey<br>,VS<br>THERMAL CHARACTERISTICS » Os |=<br>Characteristic Symbol Max | unit | Sat<br>Thermal Resistance Junction to Case Reje 0.7<br>PIN 1.BASE<br>ee 2.EMITTER |<br>COLLECTOR(CASE) |<br>250 FIGURE -1 POWER DERATING co MILLIMETERS<br>SI MEE RS<br>E 20 (|<br>S75 Kt tee tee |<br>Ejogf8 59 __SS| —ea|_| | ca |j 1928796 || 2223928<br>ie | | | Kf ff Dp | 1118 | 1219<br>cael<br>ES 1) | E [32 |e<br>= 50 = H | 29.90 | 30.40ce<br>go | | [| | | N | | 1664 | 17.30<br>es]0 | | J tt J | 388 | 436<br>25 50 75 100 125 160 175 200 Kj 10.67 | 1018 |<br>to To , TEMPERATURE? C)— eS|<br>**----- End of picture text -----**<br>


MJ10024, MJ10025 NPN 

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ee<br>ELECTRICAL CHARACTERISTICS ( T,, = 25°C unless otherwise noted )<br>**----- End of picture text -----**<br>


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||||||||||
|---|---|---|---|---|---|---|---|---|
|OFF|CHARACTERISTICS|
|Collector|-|Emitter|Sustaining|Voltage|
|(1g =|100 mA,|I, =0|)|MJ10024|Vegoysus)|750|Vv|
|MJ10025|850|
|Collector|Cutoff|Current|
|( Vegy=|Rated|Value,|Veeiorr=1-5 V|)|mA|
|( Vogy=|Rated|Value,|Vagiop~)=1-5 V :Tg=150 °C)|
|Collector|Cutoff|Current|
|( Vogy=|Rated|Vogy.Rp_e50|©|,T,.=100 °C)|mA|
|Emitter|Cutoff|Current|mA|
|(Veg|=2.0V,1,=0)|175|
|ON|CHARACTERISTICS|(1)|
|DC|Current|Gain|
|(lg =5.0A,Veg|=5.0V)|
|Collector|- Emitter|Saturation|Voltage|VoE(sat)|V|
|(1,|=10A,1,=1.0A)|
|(1,|=20A,|Ip =5.0A)|
|(1, =10A,|I,|=|1.0A,T.=100|°C)|
|Base|- Emitter Saturation Voltage|Vee(sat)|Vv|
|(l_=10A,|Ip=1.0A)|2.5|
|(I=|10A,||,|=|1.0|A|,T.=100|°C)|2.5|
|Diode|Forward|Voltage|Ve|Vv|
|(lp =10A)|4.0|

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## DYNAMIC CHARACTERISTICS 

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||||||
|---|---|---|---|---|
|Output Capacitance|Cop|pF|
|(Veg=10|V,|I_=0,|f =1.0|kHz)|

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## SWITCHING CHARACTERISTICS 

(1) Pulse Test: Pulse width = 300s , Duty Cycle = 2.0% 

MJ10024, MJ10025 NPN ) 

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MJ10024 , MJ10025 NPN 

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## a 

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ACTIVE REGION SAFE OPERATING AREA 

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- [Supplier page](https://es.farnell.com/en-ES/solid-state/mj10025/darlington-transistor-npn-850v/dp/1713166)
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