# Bipolar (BJT) Single Transistor, Darlington, NPN, 400 V, 50 A, 250 W, TO-3, Through Hole ![Product image](https://novapart.co/image/farnell:2101393/) **URL**: https://novapart.co/products/MJ10015/bipolar-bjt-single-transistor-darlington-npn-400-v **SKU**: MJ10015 **Manufacturer**: SOLID STATE **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €5.2400 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 2Pins | | Power Dissipation | 250W | | Dc Current Gain Hfe | 10hFE | | Transistor Mounting | Through Hole | | Transistor Polarity | NPN | | Transistor Case Style | TO-3 | | Dc Current Gain Hfe Min | 10hFE | | Operating Temperature Max | 200°C | | Continuous Collector Current | 50A | | Collector Emitter Voltage Max | 400V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2101393/) Se 46 FARRAND STREET BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com ## eee eeeeeeeeeeessecece creeeee SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE The MJ10015 and MJ10016 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper -ated switch-mode applications such as: FEATURES: *Continuous Collector Current - |, = 50A *Switching Regulators *Inverters *Solenoid and Relay Drivers *Motor Controls **==> picture [205 x 146] intentionally omitted <==** **----- Start of picture text -----**
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MJ10015
MJ10016
-_—_——__—
50 AMPERE
POWER DARLINGTON
TRANSISTORS
400-500 VOLTS
“eo se 250 WATTS
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## MAXIMUM RATINGS **==> picture [473 x 381] intentionally omitted <==** **----- Start of picture text -----**
Collector-Emitter Voltage [Veeowun | 400 | S00 |v \w¥
Collector Current-Continuous 50 A
-Peak 75 TO-3
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Power Dissipation @T,=25°C Ww c 4
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; sof —_~ || |[| [|| of)[TX]KOTTT cH || 2980138 || 30.40162
pg a ee ee es | | 16.64 | 17.30
ep | | | [T TP fy TN J | 388 | 436
; 0 2 50 75 100 125 150 175 200 K | 10.67 _| 11.18
To , TEMPERATURE(°C) |
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## THERMAL CHARACTERISTICS CHARACTERISTICS MJ10015, MJ10016 NPN **==> picture [476 x 473] intentionally omitted <==** **----- Start of picture text -----**
||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---| |eee|eee|ee|eee eee eee|eee|eee|eee|eee|eee eee|eas| |ELECTRICAL|CHARACTERISTICS|(|T,|=|25°C|unless|otherwise|noted|)| |ee| |OFF|CHARACTERISTICS| |Collector|-|Emitter|Sustaining|Voltage| |(lgc|=|100|mA,I,8|=|0, Vclamp=Rate|VCEO|)|MJ10015M10016|V,CEO(SUS)|500400|Vv| |Collector|Cutoff|Current| |( Voey=|Rated Value,|Vagiop_=1-5 V|)|mA| |Emitter|Cutoff Current|mA| |(Veg= 2.0V,|i, =0)| |ON|CHARACTERISTICS|(1)| |DC|Current|Gain| |(le(lg =20A,=|40|A,|VegVog ==|5.05.0 V)V)| |Collector|- Emitter Saturation Voltage|Vezisat)|Vv| |(Ig| |(lg|=252|0|A,A,|Iplg|=|1|.0A)0A)| |Base - Emitter Saturation Voltage|Veg;sat)|Vv| |(lg =|20A,|p=|1.0A)|2.75| |Diode|Forward Voltage|Ve|Vv| |(lp = 20A)| |DYNAMIC|CHARACTERISTICS| |Output Capacitance|Cop|pF| |(Veg=10 V,|1-=0,|f =100|kHz|)|750| |SWITCHING|CHARACTERISTICS| |RiseTime|||tg|t0AVpemesov|«||ot||||ts| |tp=2susouycyte sow|||te|||||25|||os||| |(1)|Pulse|Test:|Pulse width|= 300|ys|,|Duty|Cycle|S|2.0%|ee| **----- End of picture text -----**
MJ10015, MJ10016 NPN nnn FIG-2 DC CURRENT GAIN **==> picture [187 x 9] intentionally omitted <==** **----- Start of picture text -----**
FIG-3 COLLECTOR EMITTER SATURATION VOLTAGE
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FIG-4 OUTPUT CAPACITANCES FIG-S BASE- EMITTER SATURATION VOLTAGE
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FIG-6 COLLECTOR CUT-OFF REGION
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MJ10015 , MJ10016nnyNPN ## a **==> picture [452 x 428] intentionally omitted <==** **----- Start of picture text -----**
FIG-7 FORWARD BIAS SAFE OPERATING AREA [FORWARD BIAS __|
0 EF Sr cet or FAH There are. two limitation on the power handling ability
E | TTS lin man of a transistor:average junction temperature and second
g 10 |Se| all Bal breakdown safe operating area curves indicate Ie-Vce
3 = a limits of the transistor that must be observed for reliable
© SEES ESE (00 Ht EE operation i.e., the transistor must not be subjected to
& 291.0(— tt| TTT AKTNUT -{-EMJ10015EtHil greaterThe data dissipationof FIG-7 than curvesis base onindicate.T.=25 °C;T seg isvariable
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go Pet = EE are valid for duty cycles to 10% must be derate when
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1 2 5 10 20 50 100 200 500
Vex , COLLECTOR EMITTER VOLTAGE (VOLTS)
FIG-8 REVERSE BIAS SAFE OPERATING AREA REVERSE BIAS|
50 Voi | Ft ~ LL] inust be sustainedFor inductivesimuttaneouslyloads, high voltageduring turn-off,and high incurrentmost
40 BOUNDARY FORM016 FIN | | | cases, with the base-to-emitter junction reverse biased
rg2 _ THE1S 100V LOCUS LESS FOR MJ10015 | ot | | aUndersafe theselevel conditionsat or below the collectora specfic voltagevalue must beof collector held to
& | | \ | | current. This can be accomplished by several mean such as
&3 30 || \ | activesafe levelclamping,for theseRC devicessnubbing,is specifiedload line shaping,as Reverseetc.Bias the
2 ft || fof TXT]| Safe Operating Area and5 represents the vokage-current.
86 20 ts P| | K [| ratingconditionis verifiedallowableunderduringclampedreverseconditionsbiased tum-off.so thatThisthe
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0 50 100 150 =—.200 250 300 = 350 400-450 500
Vee COLLECTOR-EMITTER VOLTAGE(VOLTS)
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