# Bipolar (BJT) Single Transistor, Darlington, NPN, 400 V, 20 A, 175 W, TO-3, Through Hole

![Product image](https://novapart.co/image/farnell:1165888/)

**URL**: https://novapart.co/products/MJ10005/bipolar-bjt-single-transistor-darlington-npn-400-v
**SKU**: MJ10005
**Manufacturer**: MULTICOMP PRO
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €2.1700
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 2Pins |
| Power Dissipation | 175W |
| Dc Current Gain Hfe | 50hFE |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transistor Case Style | TO-3 |
| Dc Current Gain Hfe Min | 50hFE |
| Operating Temperature Max | 200°C |
| Continuous Collector Current | 20A |
| Collector Emitter Voltage Max | 400V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1165888/)

## **NPN Silicon Power Darlington Transistor** 

## **Description** 

The MJ10004 and MJ10005 darlington transistors are designed for high-voltage, highspeed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. 

## **Features** 

- Continuous collector current - Ic = 20A 

- Switching regulators 

- Inverters 

- Solenoid and relay drivers 

- Motor controls 

## **Maximum Ratings** 

|**Maximum Ratings**||||M100<br>15|
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**MJ10004**|**MJ10005**|**Unit**|
|Collector - Emitter Voltage|Vcev|450|500|V|
||Vcex(sus)|400|450||
||Vceo(sus)|350|400||
|Emitter - Base Voltage|Vebo|8|||
|Collector Current - Continuous<br>- Peak|Ic<br>Icm|20<br>30||A|
|Base Current|Ib|2.5|||
|Total Power Dissipation @ TC = 25°C<br>@ TC = 100°C<br>Derate above 25°C|Pd|175<br>100<br>1||W<br>W<br>W/°C|
|Operating and Storage Junction<br>Temperature Range|Tj, Tstg|-65 to +200||°C|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max.**|**Unit**|
|Thermal Resistance Junction to case|Rθjc|1|°C/W|



Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

11/10/19 V1.0 

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## **NPN Silicon Power Darlington Transistor** 

## **Electrical Characteristics (Tc =  25°C unless otherwise noted)** 

|**Characteristic**|**Characteristic**|**Symbol**|**Min.**|**Max.**|**Unit**|
|---|---|---|---|---|---|
|**OFF Characteristics**||||||
|Collector - Emitter Sustaining Voltage<br>(Ic = 250mA, Ib= 0, Vclamp = Rated Vceo)         MJ10004<br>MJ10005||Vceo(sus)|350<br>400|-|V|
|Collector Cutoff Current<br>(Vce= Rated Vcev, Rbe= 50Ω, Tc= 100°C)||Icer|-|5.0|mA|
|Collector Cutoff Current<br>(Vcev= Rated Value, Vbe(off)= 1.5V)<br>(Vcev= Rated Value, Vbe(off)= 1.5V, Tc= 100°C)||Icev|-|0.25<br>5.0||
|Emitter Cutoff Current<br>(Veb= 2.0V, Ic= 0)||Iebo|-|175||
|**ON Characteristics (1)**||||||
|DC Current Gain<br>(Ic= 5.0A, Vce= 5.0V)<br>(Ic= 10A, Vce= 5.0V)||hFE|50<br>40|600<br>400|-|
|Collector - Emitter Saturation Voltage<br>(Ic = 10A, Ib= 400mA)<br>(Ic = 20A, Ib= 2.0A)<br>(Ic= 10A, Ib= 400mA, Tc= 100°C)||Vce(sat)|-|1.9<br>3.0<br>2.0|V|
|Base-Emitter Saturation Voltage<br>(Ic = 10A, Ib= 400mA)<br>(Ic= 10A, Ib= 400mA, Tc= 100°C)||Vbe(sat)|-|2.5<br>2.5||
|Diode Forward Voltage<br>(If= 10A)||Vf|-|5.0||
|**Dynamic Characteristics**||||||
|Small-Signal Current Gain (2)<br>(Ic= 1.0A, Vce= 10V, f = 1.0MHz)|||hfe||10|-|-|
|Output Capacitance<br>(Vcb= 10V, Ie= 0, f = 100KHz)||Cob|100|-|pF|
|**Switching Characteristics**||||||
|DelayTime|Vcc= 250V, Ic= 10A<br>Ib1= 400mA, Vbe(off)= 5.0V<br>tp= 50µs, Duty Cycle<2%|td|-|0.2|µs|
|Rise Time||tr|-|0.6||
|Storage Time||ts|-|1.5||
|Fall Time||tf|-|0.5||



(1) Pulse Test: Pulse Width = 300µs, Duty Cycle[<] 2.0%. 

(2) f t = |hfe| • f test 

Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

11/10/19 V1.0 

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## **NPN Silicon Power Darlington Transistor** 

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Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

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## **NPN Silicon Power Darlington Transistor** 

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|**DIM.**|**Min.**|**Max.**|
|---|---|---|
|A|38.75|39.96|
|B|19.28|22.23|
|C|7.96|9.28|
|D|11.18|12.19|
|E|25.20|26.67|
|F|0.92|1.09|
|G|1.38|1.62|
|H|29.90|30.40|
|I|16.64|17.30|
|J|3.88|4.36|
|K|10.67|11.18|



Pin 1. Base 2. Emitter Collector (Case) 

Dimensions : Millimetres 

## **Part Number Table** 

|**Part Number Table**||
|---|---|
|**Description**|**Part Number**|
|Darlington Transistor, TO-3|MJ10004|
|Darlington Transistor, TO-3|MJ10005|



**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. 

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11/10/19 V1.0 

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## Links

- [View this product on Novapart](https://novapart.co/products/MJ10005/bipolar-bjt-single-transistor-darlington-npn-400-v)
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- [Supplier page](https://es.farnell.com/en-ES/multicomp/mj10005/darlington-transistor-to-3/dp/1165888)
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