# SCR THYRISTOR, 25A, 50V, TO-220AB
**URL**: https://novapart.co/products/MCR69-2G./scr-thyristor-25a-50v-to-220ab
**SKU**: MCR69-2G.
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCRs
**Price**: €0.4840
**Stock**: 10+
## Description
PEAK; SCR THYRISTOR, 25A, 50V, TO-220AB; Peak Repetitive Off-State Voltage, Vdrm:50V; Gate Trigger Current Max, Igt:30mA; Current It av:16A; On State RMS Current IT(rms):25A; Thyristor
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (17-Dec-2014) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Holding Current Max | 50mA |
| On State Rms Current | 25A |
| Thyristor Case Style | TO-220AB |
| Average On State Current | 16A |
| Gate Trigger Current Max | 30mA |
| Gate Trigger Voltage Max | 1.5V |
| Operating Temperature Max | 125°C |
| Peak Non Repetitive Surge Current | 300A |
| Peak Repetitive Off State Voltage | 50V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:1150391/)
## MCR69−2, MCR69−3
## Silicon Controlled Rectifiers **Reverse Blocking Thyristors**
Designed for overvoltage protection in crowbar circuits.
## **Features**
- Glass-Passivated Junctions for Greater Parameter Stability and Reliability
- Center-Gate Geometry for Uniform Current Spreading Enabling High Discharge Current
- Small Rugged, Thermowatt Package Constructed for Low Thermal Resistance and Maximum Power Dissipation and Durability
- High Capacitor Discharge Current, 750 Amps
- Pb−Free Packages are Available*
**MAXIMUM RATINGS** (TJ = 25°C unless otherwise noted)
**Rating Symbol Value Unit** Peak Repetitive Off−State Voltage (Note 1) VDRM, V (TJ = 40 to +125°C, Gate Open) VRRM MCR69−2 50 MCR69−3 100 ~~ge~~ Peak Discharge Current (Note 2) ITM 750 A On-State RMS Current IT(RMS) 25 A (180° Conduction Angles; TC = 85°C) ~~ee~~ Average On-State Current IT(AV) 16 A (180° Conduction Angles; TC = 85°C) ~~ee~~ Peak Non-Repetitive Surge Current ITSM ~~ee~~ 300 A (1/2 Cycle, Sine Wave, 60 Hz, TJ = 125°C) ~~re~~ Circuit Fusing Considerations (t = 8.3 ms) I[2] t 375 A[2] s Forward Peak Gate Current IGM 2.0 A (t ≤ 1.0 s, TC = 85°C) Forward Peak Gate Power PGM 20 W (t ≤ 1.0 s, TC = 85°C) Forward Average Gate Power PG(AV) 0.5 W (t = 8.3 ms, TC = 85°C) ~~——~~ Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C Mounting Torque − 8.0 in. lb.
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
2. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various duration of an exponentially decaying current waveform, tw is defined as 5 time constants of an exponentially decaying current pulse.
3. Test Conditions: IG = 150 mA, VD = Rated VDRM, ITM = Rated Value, TJ = 125°C.
- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
## **http://onsemi.com**
**SCRs 25 AMPERES RMS 50 thru 100 VOLTS**
**==> picture [172 x 217] intentionally omitted <==**
**----- Start of picture text -----**
G
A K
MARKING
DIAGRAM
4
AYWW
TO−220AB MCR69x
CASE 221A AKA
STYLE 3
1 |
2
3
A = Assembly Location
Y = Year
WW = Work Week
MCR69 = Device Code
x = 2 or 3
AKA = Location Code
**----- End of picture text -----**
## **PIN ASSIGNMENT**
|1
2
3
4|Anode
Gate
Cathode
Anode|
|---|---|
## **ORDERING INFORMATION**
|**Device**|**Package**|**Shipping**†|
|---|---|---|
|MCR69−2|TO220AB|500/Box|
|MCR69−2G|TO220AB
(Pb−Free)|500/Box|
|MCR69−3|TO220AB|500/Box|
|MCR69−3G|TO220AB
(Pb−Free)|500/Box|
- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Publication Order Number:
**1**
Semiconductor Components Industries, LLC, 2004 **December, 2004 − Rev. 1**
**MCR69/D**
**MCR69−2, MCR69−3**
## **THERMAL CHARACTERISTICS**
|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Thermal Resistance, Junction−to−Case|R�JC|1.5|°C/W|
|Thermal Resistance, Junction−to−Ambient|R�JA|60|°C/W|
|Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds|TL|260|°C|
|**ELECTRICAL CHARACTERISTICS** (TC= 25°C unless otherwise noted.)|**ELECTRICAL CHARACTERISTICS** (TC= 25°C unless otherwise noted.)|**ELECTRICAL CHARACTERISTICS** (TC= 25°C unless otherwise noted.)|**ELECTRICAL CHARACTERISTICS** (TC= 25°C unless otherwise noted.)|**ELECTRICAL CHARACTERISTICS** (TC= 25°C unless otherwise noted.)|**ELECTRICAL CHARACTERISTICS** (TC= 25°C unless otherwise noted.)|
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Peak Repetitive Forward or Reverse Blocking Current
(VAK= Rated VDRMor VRRM, Gate Open)
TJ= 25°C
TJ= 125°C|IDRM, IRRM|−
−|−
−|10
2.0|�A
mA|
|**ON CHARACTERISTICS**||||||
|Peak Forward On-State Voltage
(ITM= 50 A) (Note 4)
(ITM= 750 A, tw= 1 ms) (Note 5)|VTM|−
−|−
6.0|1.8
−|V|
|Gate Trigger Current (Continuous dc)
(VD= 12 V, RL= 100�)|IGT|2.0|7.0|30|mA|
|Gate Trigger Voltage (Continuous dc)
(VD= 12 V, RL= 100�)|VGT|−|0.65|1.5|V|
|Gate Non−Trigger Voltage
(VD= 12 Vdc, RL= 100�, TJ= 125°C)|VGD|0.2|0.40|−|V|
|Holding Current
(VD= 12 V, Initiating Current = 200 mA, Gate Open)|IH|3.0|15|50|mA|
|Latching Current
(VD= 12 Vdc, IG= 150 mA)|IL|−|−|60|mA|
|Gate Controlled Turn-On Time (Note 6)
(VD= Rated VDRM, IG= 150 mA)
(ITM= 50 A Peak)|tgt|−|1.0|−|�s|
|**DYNAMIC CHARACTERISTICS**||||||
|Critical Rate-of-Rise of Off-State Voltage
(VD= Rated VDRM, Gate Open, Exponential Waveform, TJ= 125°C)|dv/dt|10|−|−|V/�s|
|Critical Rate-of-Rise of On-State Current
IG= 150 mA
TJ= 125°C|di/dt|−|−|100|A/�s|
4. Pulse duration � 300 � s, duty cycle � 2%.
5. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various durations of an exponentially decaying current waveform. tw is defined as 5 time constants of an exponentially decaying current pulse.
6. The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance.
**http://onsemi.com**
**2**
**MCR69−2, MCR69−3**
## **Voltage Current Characteristic of SCR**
**==> picture [491 x 610] intentionally omitted <==**
**----- Start of picture text -----**
+ Current
Anode +
Symbol Parameter VTM
VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Off State Reverse Voltage IRRM at VRRM IH
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode −
1000
1.0
300
200 0.8
0.6
100
ITM
0.4
50
tw 0.2
20 tw = 5 time constants 0
0.5 1.0 2.0 5.0 10 20 50 25 50 75 100 125
tw, PULSE CURRENT DURATION (ms) TC, CASE TEMPERATURE ( ° C)
Figure 1. Peak Capacitor Discharge Current Figure 2. Peak Capacitor Discharge Current
Derating
125 32
120
Half Wave
115
24
110
dc
105
dc
100 16
95
90
Half Wave 8.0
85 TJ = 125 ° C
80
75 0
4.0 8.0 12 16 20 0 4.0 8.0 12 16 20
IT(AV), AVERAGE ON-STATE CURRENT (AMPS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
NORMALIZED PEAK CURRENT
I , PEAK DISCHARGE CURRENT (AMPS)TM
°
CASE TEMPERATURE ( C)
(AV)
P , AVERAGE POWER DISSIPATION (WATTS)
C
T , MAXIMUM ALLOWABLE
**----- End of picture text -----**
**Figure 3. Current Derating**
**Figure 4. Maximum Power Dissipation**
**http://onsemi.com**
**3**
**MCR69−2, MCR69−3**
**==> picture [513 x 624] intentionally omitted <==**
**----- Start of picture text -----**
1
0.7
0.5
0.3
0.2
Z�JC(t) = R�JC • r(t)
0.1
0.07
0.05
0.03
0.02
0.01
0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1 k 2 k 3 k 5 k 10 k
t, TIME (ms)
Figure 5. Thermal Response
10
1.4
5.0
VD = 12 Volts
3.0 RL = 100 � 1.2 VD = 12 Volts
2.0 RL = 100 �
1.0 1.0
0.5
0.8
0.3
0.2
0.5
−60 −40 −20 0 20 40 60 80 100 120 140 −60 −40 −20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE ( ° C) TJ, JUNCTION TEMPERATURE ( ° C)
Figure 6. Gate Trigger Current Figure 7. Gate Trigger Voltage
3.0
2.0
VD = 12 Volts
ITM = 100 mA
1.0
0.8
0.5
0.3
−60 −40 −20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE ( ° C)
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
NORMALIZED GATE TRIGGER CURRENT NORMALIZED GATE TRIGGER VOLTAGE
NORMALIZED HOLD CURRENT
**----- End of picture text -----**
**Figure 8. Holding Current**
**http://onsemi.com**
**4**
**MCR69−2, MCR69−3**
## **PACKAGE DIMENSIONS**
## **TO−220AB** CASE 221A−07 ISSUE AA
**==> picture [242 x 168] intentionally omitted <==**
**----- Start of picture text -----**
B F −T− SEATINGPLANE
C
4 T S
Q A
1 2 3
H
K U
Z
L
V
R
G
D J
N
**----- End of picture text -----**
- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
|3.|DIME
BODY
ALLOW|SION Z DEFINES A ZONE WHERE AL
AND LEAD IRREGULARITIES ARE
ED.|SION Z DEFINES A ZONE WHERE AL
AND LEAD IRREGULARITIES ARE
ED.|SION Z DEFINES A ZONE WHERE AL
AND LEAD IRREGULARITIES ARE
ED.|SION Z DEFINES A ZONE WHERE AL
AND LEAD IRREGULARITIES ARE
ED.|
|---|---|---|---|---|---|
||DIM|INCHES||MILLIMETERS||
|||MIN|MAX|MIN|MAX|
||A|0.570|0.620|14.48|15.75|
||B|0.380|0.405|9.66|10.28|
||C|0.160|0.190|4.07|4.82|
||D|0.025|0.035|0.64|0.88|
||F|0.142|0.147|3.61|3.73|
||G|0.095|0.105|2.42|2.66|
||H|0.110|0.155|2.80|3.93|
||J|0.014|0.022|0.36|0.55|
||K|0.500|0.562|12.70|14.27|
||L|0.045|0.060|1.15|1.52|
||N|0.190|0.210|4.83|5.33|
||Q|0.100|0.120|2.54|3.04|
||R|0.080|0.110|2.04|2.79|
||S|0.045|0.055|1.15|1.39|
||T|0.235|0.255|5.97|6.47|
||U|0.000|0.050|0.00|1.27|
||V|0.045|−−−|1.15|−−−|
||Z|−−−|0.080|−−−|2.04|
||STYL
PI|E 3:
N 1.
CATHODE
2.
ANODE
3.
GATE
4.
ANODE||||
**http://onsemi.com**
**5**
**MCR69−2, MCR69−3**
**ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **PUBLICATION ORDERING INFORMATION**
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**MCR69/D**
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**6**
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---
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