# Thyristor, 200 V, 30 mA, 8 A, 12 A, TO-220AB, 3 Pins

![Product image](https://novapart.co/image/farnell:3020235/)

**URL**: https://novapart.co/products/MCR218-4G/thyristor-200-v-30-ma-8-a-12-to-220ab-3-pins
**SKU**: MCR218-4G
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCRs
**Price**: €0.7460
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Description

Peak Repetitive Off-State Voltage, Vdrm:200V; Gate Trigger Current Max, Igt:30mA; Current It av:8A; On State RMS Current IT(rms):12A; Thyristor Case Style:TO-220AB; No. of Pins:3Pins; Peak Non Rep Surge Curre

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Product Range | MCR218 |
| Thyristor Mounting | Through Hole |
| Holding Current Max | 50mA |
| On State Rms Current | 12A |
| Thyristor Case Style | TO-220AB |
| Average On State Current | 8A |
| Gate Trigger Current Max | 30mA |
| Gate Trigger Voltage Max | 1.5V |
| Operating Temperature Max | 125°C |
| Peak Non Repetitive Surge Current | - |
| Peak Repetitive Off State Voltage | 200V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3020235/)

**Thyristors** Surface Mount – 50V - 400V >  MCR218-2G, MCR218-4G, MCR218-6G 

~~Pb (4)~~ 

## ~~-~~ MCR218-2G, MCR218-4G, MCR ~~218 6G~~ 

## **Description** ~~Lo~~ 

Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. 

## **Features** 

- Glass-Passivated • TO-220 Construction − Junctions Low Thermal Resistance, 

- • Blocking Voltage to 400 High Heat Dissipation and Volts Durability 

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Pin Out<br>ee<br>CASE 221A<br>By. co<br>STYLE 4<br>1 2<br>**----- End of picture text -----**<br>


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Functional Diagram<br>**----- End of picture text -----**<br>


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Additional Information es<br>a<br>Datasheet Resources Samples<br>**----- End of picture text -----**<br>


© 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/15/19 

**Thyristors** Surface Mount – 50V - 400V >  MCR218-2G, MCR218-4G, MCR218-6G 

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Maximum Ratings   (TJ = 25°C unless otherwise noted)<br>Rating Symbol Value Unit<br>Peak Repetitive Off−State Voltage (Note 1) MCR68-2 VDRM, 50 V<br>(− 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)  VRRM<br>On-State RMS Current<br>(180º Conduction Angles; TC = 85ºC) ITM (RMS) 12 A<br>Peak Discharge Current (Note 2) ITM 300 A<br>Average On-State Current(180º Conduction Angles; TC = 85ºC) IT(AV) 8.0 A<br>Peak Non-Repetitive Surge Current(1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) ITSM 100 A<br>Circuit Fusing Consideration (t = 8.3 ms) I [2] t 40 A²sec<br>Forward Peak Gate Current (Pulse Width ≤ 1.0 µsec, TC= 80°C) IGM 2.0 A<br>Forward Peak Gate Current (Pulse Width ≤ 1.0 µsec, TC= 85°C) IGM 20 W<br>Forward Average Gate Power (t = 8.3 ms, TC = 85ºC) PG(AV) 0.5 W<br>Operating Junction Temperature Range TJ -40 to +125 °C<br>Storage Temperature Range Tstg -40 to +150 °C<br>Mounting Torque − 8.0 in. lb.<br>**----- End of picture text -----**<br>


Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 

2. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various duration of an exponentially decaying current waveform, tw is defined as 5 time constants of an exponentially decaying current  pulse. 

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Thermal Characteristics<br>Rating Symbol Value Unit<br>Thermal Resistance, Junction−to−Case (AC) R Ɵ JC 2.0 °C/W<br>Junction−to−Ambient R Ɵ JA 60<br>Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TL 260 °C<br>Electrical Characteristics - OFF   (TJ = 25°C unless otherwise noted)<br>Characteristic Symbol Min Typ Max Unit<br>Peak Repetitive Forward or Reverse Blocking Current TJ = 25°C IDRM,  - - 10 mA<br>(VD = Rated VDRM and VRRM; Gate Open) TJ = 125°C IRRM - - 2.0<br>Electrical Characteristics - ON  (TJ = 25°C unless otherwise noted)<br>Characteristic Symbol Min Typ Max Unit<br>Peak Forward On−State Voltage (Note 2)  (I(ITMTM = 32 A)(I = 300 A, tw = 1 ms) (Note 4)TM = 24 A) (Note 3) VTM __ 6.0_ 2.2_ V<br>Gate Trigger Current (Continuous dc)  (VD = 12 V; RL = 100 Ω) IGT 2.0 7.0 30 mA<br>Gate Trigger Voltage (Continuous dc)  (VD = 12 V; RL = 100 Ω) VGT _ 0.65 1.5 V<br>Gate Trigger Non-Current (Continuous dc)  (VD = 12 V; RL = 100 Ω) VGD 0.2 0.40 _ V<br>Holding Current  (VD = 12 V, Initiating Current = 200 mA, Gate Open)) IH 3.0 15 50 mA<br>Latch Current  (VD = 12 V, IG = 30 mA) IL _ 35 80 mA<br>Gate Controlled Turn-On Time (Note 5)<br>(VD = Rated VDRM, IG = 150 mA)  (ITM = 24 A Peak) VGT _ 1.0 _ µs<br>**----- End of picture text -----**<br>


© 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/15/19 

Surface Mount – 50V - 400V >  MCR218-2G, MCR218-4G, MCR218-6G 

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## **Thyristors** 

|**Dynamic Characteristics**||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Critical Rate of Rise of Off−State Voltage<br>(VD= Rated VDRM, Exponential Waveform, Gate Open, TJ= 125ºC)|dv/dt|10|−|−|V/µs|
|Critical Rate of Rise of On−State Current<br>IG= 150 A       TJ= 125ºC|di/dt|−|−|75|A/µs|



3. Pulse duration ≤ 300 µs, duty cycle ≤ 2%. 

4. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various durations of an exponentially decaying current waveform. tw is defined as 5 time constants of an exponentially decaying current pulse. 

5. The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance. 

## **Voltage Current Characteristic of SCR** 

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Symbol Parameter<br>VDRM Peak Repetitive Forward Off State Voltage<br>IDRM Peak Forward Blocking Current<br>VRRM Peak Repetitive Reverse Off State Voltage<br>IRRM Peak Reverse Blocking Current<br>VTM Maximum On State Voltage<br>IH Holding Current<br>**----- End of picture text -----**<br>


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+Current<br>VTM Quadrant 1Main Terminal 2+<br>On State<br>IRRM at VRRM IH<br>Off State +Voltage<br>IH IDRM at VDRM<br>Quadrant 3Main Terminal 2- VTM<br>**----- End of picture text -----**<br>


© 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/15/19 

**Thyristors** Surface Mount – 50V - 400V >  MCR218-2G, MCR218-4G, MCR218-6G 

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Figure 1. Current Derating<br>**----- End of picture text -----**<br>


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125<br>115<br>α<br>α = CONDUCTION ANGLE<br>105<br>95<br>dc<br>85<br>α = 30° 60° 90° 120° 180°<br>75<br>0<br>IT(AV)<br>°<br>TC<br>**----- End of picture text -----**<br>


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Figure 2. On−State Power Dissipation<br>**----- End of picture text -----**<br>


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Figure 3. Typical Gate Trigger Current vsTemperature<br>**----- End of picture text -----**<br>


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Figure 4. Typical Gate Trigger Voltage vs Temperature<br>**----- End of picture text -----**<br>


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**Figure 5. Typical Holding Current vs Temperature** 

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© 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/15/19 

**Thyristors** Surface Mount – 50V - 400V >  MCR218-2G, MCR218-4G, MCR218-6G 

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Dimensions<br>SEATING<br>PLANE<br>4<br>12 3<br>**----- End of picture text -----**<br>


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Part Marking System<br>4<br>YMAXX<br>MCR218x-G<br>TO-220AM AKA<br>Case 221A<br>1 2 3 Style 12<br>MCR218x =Device Code<br>x =2, 4, or 6<br>Y =Year<br>M =Month<br>A =Assembly Site<br>AKA =Diode Polarity<br>G =Pb-Free Package<br>**----- End of picture text -----**<br>


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Inches Millimeters<br>Dim<br>Min Max Min Max<br>A 0.590 0.620 14.99 15.75<br>B 0.380 0.420 9.65 10.67<br>C 0.178 0.188 4.52 4.78<br>D 0.025 0.035 0.64 0.89<br>F 0.142 0.147 3.61 3.73<br>G 0.095 0.105 2.41 2.67<br>H 0.110 0.130 2.79 3.30<br>J 0.018 0.024 0.46 0.61<br>K 0.540 0.575 13.72 14.61<br>L 0.060 0.075 1.52 1.91<br>N 0.195 0.205 4.95 5.21<br>Q 0.105 0.115 2.67 2.92<br>R 0.085 0.095 2.16 2.41<br>S 0.045 0.060 1.14 1.52<br>T 0.235 0.255 5.97 6.47<br>U 0.000 0.050 0.00 1.27<br>V 0.045 --- 1.15 ---<br>Z --- 0.080 --- 2.04<br>**----- End of picture text -----**<br>


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Pin Assignment<br>1 Cathode<br>2 Anode<br>3 Gate<br>4 Anode<br>Ordering Information<br>Device Package Shipping<br>MCR218–2G<br>TO-220AB<br>MCR218–4G 500 Units / Box<br>(Pb-Free)<br>MCR218-6G<br>**----- End of picture text -----**<br>


1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 

2. CONTROLLING DIMENSION: INCH. 

3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. 

**Disclaimer Notice -** Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications.  Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics. 

© 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/15/19 



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- [Supplier page](https://es.farnell.com/littelfuse/mcr218-4g/thyristors/dp/3020235)
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