# Power MOSFET, N Channel, 30 V, 2 A, 0.125 ohm, SOT-323, Surface Mount

![Product image](https://novapart.co/image/farnell:2845363/)

**URL**: https://novapart.co/products/MCH3478-TL-W/power-mosfet-n-channel-30-v-2-a-0125-ohm-sot-323
**SKU**: MCH3478-TL-W
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0790
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 1.2W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 1.2W |
| Rds(On) Test Voltage | 4.5V |
| On Resistance Rds(On) | 0.125ohm |
| Transistor Case Style | SOT-323 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2A |
| Drain Source On State Resistance | 0.125ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2845363/)

**Ordering number : ENA1353B** 

## **MCH3478** 

## **N-Channel Power MOSFET 30V, 2A, 165m** Ω **, Single MCPH3** 

http://onsemi.com 

## **Features** 

- Low ON-resistance 

- 1.8V drive 

   - Ultrahigh speed switching 

   - Halogen free compliance 

- Protection diode in 

## **Specifi cations** 

## **Absolute Maximum Ratings** at Ta=25°C 

**==> picture [471 x 422] intentionally omitted <==**

**----- Start of picture text -----**<br>
Parameter Symbol Conditions Ratings Unit<br>Drain to Source Voltage VDSS 30 V<br>Gate to Source Voltage  VGSS ±12 V<br>Drain Current (DC) ID 2 A<br>Drain Current (PW≤10s) ID Duty cycle≤1% 2.5 A<br>Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 8 A<br>When mounted on ceramic substrate (900mm2×0.8mm) 0.8 W<br>Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2×0.8mm), PW=10s 1.2 W<br>Channel Temperature Tch 150 °C<br>Storage Temperature Tstg --55 to +150 °C<br>Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating<br>Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.<br>Cs<br>Package Dimensions  Product & Package Information<br>unit : mm (typ) • Package  : MCPH3<br>7019A-003 • JEITA, JEDEC  : SC-70, SOT-323<br>• Minimum Packing Quantity : 3,000 pcs./reel<br>MCH3478-TL-H<br>2.0 0.15 MCH3478-TL-W Packing Type : TL Marking<br>| 3<br>FK<br>0 to 0.02<br>TL<br>1 2<br>iatL 0.65 0.3 ia Electrical Connection i:<br>a 3<br>1 : Gate<br>2 : Source<br>3 : Drain<br>1<br>MCPH3<br>C c 2<br>2<br>0.25<br>LOT No. LOT No.<br>2.1 1.6<br>0.25<br>0.85<br>0.07<br>**----- End of picture text -----**<br>


Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ~~Cs~~ 

Semiconductor Components Industries, LLC, 2013 **December, 2013** 

D1113 TKIM TC-00003076/60612TKIM/21809PE MSIM TC-00001860  No. A1353-1/5 

**MCH3478** 

## **Electrical Characteristics** at Ta=25°C 

|**Electrical Characteristics **at Ta|=25°C||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|||Unit|
||||min|typ|max||
|Drain to Source Breakdown Voltage|V(BR)DSS|ID=1mA, VGS=0V|30|||V|
|Zero-Gate Voltage Drain Current|IDSS|VDS=30V, VGS=0V|||1|μA|
|Gate to Source Leakage Current|IGSS|VGS=±8V, VDS=0V|||±10|μA|
|Cutoff Voltage|VGS(off)|VDS=10V, ID=1mA|0.4||1.3|V|
|Forward Transfer Admittance|| yfs||VDS=10V, ID=1A|1.2|2.0||S|
|Static Drain to Source On-State Resistance|RDS(on)1|ID=1A, VGS=4.5V||125|165|mΩ|
||RDS(on)2|ID=0.5A, VGS=2.5V||165|235|mΩ|
||RDS(on)3|ID=0.3A, VGS=1.8V||250|375|mΩ|
|Input Capacitance|Ciss|VDS=10V, f=1MHz||130||pF|
|Output Capacitance|Coss|||21||pF|
|Reverse Transfer Capacitance|Crss|||14||pF|
|Turn-ON Delay Time|td(on)|See specif ed Test Circuit.||4.4||ns|
|Rise Time|tr|||8.7||ns|
|Turn-OFF Delay Time|td(off)|||16||ns|
|Fall Time|tf|||12||ns|
|Total Gate Charge|Qg|VDS=10V, VGS=4.5V, ID=2A||1.7||nC|
|Gate to Source Charge|Qgs|||0.25||nC|
|Gate to Drain “Miller” Charge|Qgd|||0.38||nC|
|Diode Forward Voltage|VSD|IS=2A, VGS=0V||0.85|1.2|V|



## **Switching Time Test Circuit** 

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**----- Start of picture text -----**<br>
VDD=15V<br>VIN<br>4.5V ID=1A<br>0V RL=15Ω<br>VIN D VOUT<br>PW=10μs<br>D.C.≤1%<br>G<br>P.G<br>50Ω<br>S MCH3478<br>**----- End of picture text -----**<br>


## **Ordering Information** 

|**Ordering Information**||||
|---|---|---|---|
|Device|Package|Shipping|memo|
|MCH3478-TL-H|MCPH3|3,000pcs./reel|Pb Free and  Halogen Free|
|MCH3478-TL-W||||



No. A1353-2/5 

**MCH3478** 

**==> picture [482 x 737] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID  --  VDS ID  --  VGS<br>2.0 2.0<br>VDS=10V<br>1.8 1.8<br>1.6 1.6<br>1.4 1.4<br>1.2 1.2<br>1.0 1.0<br>1.5V<br>0.8 0.8<br>0.6 0.6<br>0.4 0.4<br>VGS=1.2V<br>0.2 0.2<br>0 0<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5 2.0 2.5<br>Drain to Source Voltage, VDS  --  V IT14137 Gate to Source Voltage, VGS  --  V IT14138<br>RDS(on)  --  VGS RDS(on)  --  Ta<br>450 450<br>Ta=25°C<br>400 ID=0.3A 400<br>0.5A<br>350 350<br>1A<br>300 300<br>250 250<br>200 200<br>150 150<br>100 100<br>50 50<br>0 0<br>0 1 2 3 4 5 6 7 8 9 10 --60 --40 --20 0 20 40 60 80 100 120 140 160<br>Gate to Source Voltage, VGS  --  V IT14139 Ambient Temperature, Ta  --  °C IT14140<br>5 | yfs |  --  ID 5 IS  --  VSD<br>VDS=10V VGS=0V<br>3<br>3<br>2<br>2<br>1.0<br>7<br>1.0 5<br>7 3<br>2<br>5<br>0.1<br>3<br>7<br>2 5<br>3<br>2<br>0.1<br>7 0.01<br>0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0 0.2 0.4 0.6 0.8 1.0 1.2<br>Drain Current, ID  --  A IT14141 Diode Forward Voltage, VSD  --  V IT14142<br>SW Time  --  ID Ciss,  Coss,  Crss  --  VDS<br>7 7<br>VDD=15V 5 f=1MHz<br>5 VGS=4.5V<br>3<br>3 2<br>2<br>100<br>7<br>10 5<br>7 3<br>2<br>5 td(on)<br>10<br>3<br>7<br>2 5<br>0.1 2 3 5 7 1.0 2 3 5 7 10 0 5 10 15 20 25 30<br>Drain Current, ID  --  A IT14143 Drain to Source Voltage, VDS  --  V IT14144<br>Ciss<br>tf<br>td(off)<br>Crss<br>Coss<br>VGS=4.5V, ID=1.0A<br>VGS=2.5V, ID=0.5A<br>VGS=1.8V, ID=0.3A<br>°C<br>75<br>°C<br>Ta= --25<br>tr<br>°C<br>25<br>2.5V 1.8V<br>°C<br>Ta=75<br>°C<br>25<br>°C<br>Ta=75<br>4.5V 3.5V<br>°C<br>--25<br>°C<br>25<br>°C<br>--25<br>7.0V<br>Drain Current, ID  --  A Drain Current, ID  --  A<br>Static Drain to Source On-State Resistance, RDS(on)  --  mΩ Static Drain to Source On-State Resistance, RDS(on)  --  mΩ<br>fs |  --  S<br>y Source Current, IS  --  A<br>Forward Transfer Admittance, |<br>Ciss,  Coss,  Crss  --  pF<br>Switching Time, SW Time  --  ns<br>**----- End of picture text -----**<br>


No. A1353-3/5 

**MCH3478** 

**==> picture [469 x 368] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS  --  Qg S O A<br>4.5 2<br>VDS=10V<br>10 PW≤10μs<br>4.0 ID=2A 7<br>5<br>3.5<br>3<br>2<br>3.0<br>1.0<br>2.5 7<br>5<br>2.0 3<br>2<br>Operation in this area<br>1.5<br>0.1 is limited by R DS (on).<br>7<br>1.0 5 Ta=25 ° C<br>3 Single pulse<br>0.5 2 When mounted on ceramic substrate<br>0 0.01 (900mm [2] ×0.8mm)<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5<br>Total Gate Charge, Qg  --  nC IT14145 Drain to Source Voltage, VDS  --  V IT14146<br>PD  --  Ta<br>1.4<br>When mounted on ceramic substrate<br>(900mm [2] ×0.8mm)<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0<br>0 20 40 60 80 100 120 140 160<br>Ambient Temperature, Ta  --  °C IT14147<br>IDP=8A<br>ID=2.5A(PW=10s)<br>ID=2A(DC)<br>DC operation<br>100ms<br>10s<br>10ms<br>PW=10s<br>DC operation (<br>Ta=25°<br>C)<br>100<br>μs<br>1ms<br>Drain Current, ID  --  A<br>Gate to Source Voltage, VGS  --  V<br>Allowable Power Dissipation, PD  --  W<br>**----- End of picture text -----**<br>


No. A1353-4/5 

**MCH3478** 

## **Outline Drawing** 

## **Land Pattern Example** 

MCH3478-TL-H, MCH3478-TL-W 

**==> picture [254 x 370] intentionally omitted <==**

**----- Start of picture text -----**<br>
Mass (g) Unit<br>0.007<br>* For reference [mm]<br>**----- End of picture text -----**<br>


**==> picture [215 x 214] intentionally omitted <==**

**----- Start of picture text -----**<br>
Unit: mm<br>0.4<br>0.65 0.65<br>0.6<br>2.1<br>**----- End of picture text -----**<br>


Note on usage : Since the MCH3478 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 

ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”  must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

PS No. A1353-5/5 



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