# Dual MOSFET, 100 V, 100 V, 10 A, 5.5 A, 0.115 ohm

![Product image](https://novapart.co/image/farnell:4816285/)

**URL**: https://novapart.co/products/MCGD115NP10L-TP/dual-mosfet-100-v-10-a-55-0115-ohm
**SKU**: MCGD115NP10L-TP
**Manufacturer**: MICRO COMMERCIAL COMPONENTS (MCC)
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.1630
**Stock**: 10+
**Lead Time**: 148 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Product Range | - |
| Qualification | - |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 31W |
| Power Dissipation P Channel | 24W |
| Drain Source Voltage Vds N Channel | 100V |
| Drain Source Voltage Vds P Channel | 100V |
| Continuous Drain Current Id N Channel | 10A |
| Continuous Drain Current Id P Channel | 5.5A |
| Drain Source On State Resistance N Channel | 0.115ohm |
| Drain Source On State Resistance P Channel | 0.325ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4816285/)

**MCGD115NP10L** 

## **Features** 

- Trench  Power LV MOSFET Technology 

- Moisture Sensitivity Level 3 

- Halogen Free.“Green”Device[(Note1)] 

- Epoxy Meets UL 94 V-0 Flammability Rating 

- Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) 

## **Maximum Ratings** 

- Operating Junction Temperature Range : -55°C to +150°C 

## **Dual** 

## **N&P-CHANNEL MOSFET** 

- Storage Temperature Range: -55°C to +150°C 

- Thermal Resistance: 75°C/W Junction to Ambient[(Note2)] 

- NMOS:Thermal Resistance: 4°C/W Junction to Case 

- PMOS:Thermal Resistance: 5.2°C/W Junction to Case 

|**Parameter**||**Symbol**|**Rating**|**Unit**|
|---|---|---|---|---|
|**N-Channel MOSFET**|||||
|Drain-Source Voltage||VDS|100|V|
|Gate-Source Volltage||VGS|±20|V|
|Continuous Drain Current|TC=25°C|ID|10|A|
||TC=100°C||6.3||
|Pulsed Drain Current(Note 3)||IDM|40|A|
|Total Power Dissipation(Note4)||PD|31|W|
|Single Pulsed Avalanche Energy(Note5)||EAS|8|mJ|
|**P-Channel MOSFET**|||||
|Drain-Source Voltage||VDS|-100|V|
|Gate-Source Volltage||VGS|±20|V|
|Continuous Drain Current|TC=25°C|ID|-5.5|A|
||TC=100°C||-3.4||
|Pulsed Drain Current(Note 3)||IDM|-22|A|
|Total Power Dissipation(Note4)||PD|24|W|
|Single Pulsed Avalanche Energy(Note5)||EAS|6.1|mJ|



Note: 

1. Halogen free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

2. The value of RθJA is measured with the device mounted on 1in[2] FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 

3. Repetitive rating; pulse width limited by max. junction temperature. 

4. PD is based on max. junction temperature, using junction-case thermal resistance. 

5. NMOS:TJ=25, VDD=50V, VGS=10V,RG=25Ω, L=0.5mH. 

- PMOS:TJ=25, VDD=-50V, VGS=-10V,RG=25Ω, L=0.5mH. 

## **Internal Structure and Marking Code** 

**==> picture [200 x 76] intentionally omitted <==**

**----- Start of picture text -----**<br>
D1 D1 D2 D2<br>8 7 6 5<br>MCC<br>115NP10L<br>YYWW<br>1 2 3 4<br>S1 G1 S2 G2<br>**----- End of picture text -----**<br>


- 4 codes in total ����� �������������������� �������������� 

## DFN3333-D 

|||D|D|D|D|D|
|---|---|---|---|---|---|---|
|E|||||||
||||||||
|||DIMENSIONS|||||
|DIM||INCHES||MM||NOTE|
|||MIN|MAX|MIN|MAX||
|A||0.030|0.033|0.750|0.850||
|A1||0.008||0.200||TYP|
|A2||-|0.002|-|0.050||
|D||0.128|0.132|3.250|3.350||
|E||0.128|0.132|3.250|3.350||
|D1||0.039|0.043|1.000|1.100||
|E1||0.073|0.077|1.850|1.950||
|b||0.026||0.650||BSC|
|e||0.012|0.014|0.300|0.350||
|L||0.017|0.021|0.425|0.525||



## **Suggested Solder Pad Layout** 

**==> picture [137 x 123] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.650 0.400 Unit:mm<br>0.325<br>2.050<br>1.100 0.450<br>0.525<br>0.400<br>**----- End of picture text -----**<br>


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## **N-Channel MOSFE Electrical Characteristics  @ 25°C (Unless Otherwise Specified)** 

|**Parameter**|**Symbol**|**Test   Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|**Static Characteristics**|||||||
|Drain-Source Breakdown Voltage|V(BR)DSS|VGS=0V, ID=250µA|100|||V|
|Gate-Source Leakage Current|IGSS|VDS=0V, VGS=±20V|||±100|nA|
|Zero Gate Voltage Drain Current|IDSS|VDS=100V, VGS=0V|||1|µA|
|Gate-Threshold Voltage|VGS(th)|VDS=VGS, ID=250µA|1.3|1.8|2.3|V|
|Drain-Source On-Resistance|RDS(on)|VGS=10V, ID=10A||87|115|mΩ|
|||VGS=4.5V, ID=5A||88|125||
|Gate Resistance|Rg|f=1 MHz, Open Drain||1.7||Ω|
|**Diode Characteristics**|||||||
|Continuous Body Diode Current|IS||||10|A|
|Diode Forward Voltage|VSD|VGS=0V, IS=10A|||1.2|V|
|Reverse Recovery Time|trr|IF=10A, dIF/dt=100A/μs||32||ns|
|Reverse Recovery Charge|Qrr|||37||nC|
|**Dynamic Characteristics**|||||||
|Input Capacitance|Ciss|VDS=50V,VGS=0V,f=1MHz||851||pF|
|Output Capacitance|Coss|||30|||
|Reverse Transfer Capacitance|Crss|||28|||
|Total Gate Charge|Qg|VDS=50V,VGS=10V,ID=10A||23||nC|
|Gate-Source Charge|Qgs|||2.8|||
|Gate-Drain Charge|Qgd|||6.7|||
|Turn-On  Delay Time|td(on)|VDD=50V,VGS=10V<br>RG=2.2Ω, ID=10A||8.5||ns|
|Turn-On  Rise Time|tr|||20|||
|Turn-Off  Delay Time|td(off)|||21|||
|Turn-Off  Fall Time|tf|||2.2|||



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## **P-Channel Electrical Characteristics  @ 25°C (Unless Otherwise Specified)** 

|**Parameter**|**Symbol**|**Test   Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|**Static Characteristics**|||||||
|Drain-Source Breakdown Voltage|V(BR)DSS|VGS=0V, ID=-250µA|-100|||V|
|Gate-Source Leakage Current|IGSS|VDS=0V, VGS=±20V|||±100|n A|
|Zero Gate Voltage Drain Current|IDSS|VDS=-100V, VGS=0V|||-1|µ A|
|Gate-Threshold Voltage|VGS(th)|VDS=VGS, ID=-250µA|-1|-1.5|-2|V|
|Drain-Source On-Resistance|RDS(on)|VGS=-10V, ID=-5A||250|325|mΩ|
|||VGS=-4.5V, ID=-3A||260|350||
|Gate Resistance|Rg|f=1 MHz, Open Drain||5||Ω|
|**Diode Characteristics**|||||||
|Continuous Body Diode Current|IS||||-5.5|A|
|Diode Forward Voltage|VSD|VGS=0V, IS=-5A|||-1.2|V|
|Reverse Recovery Time|trr|IF=-5A, dIF/dt=100A/μs||28.4||ns|
|Reverse Recovery Charge|Qrr|||48.7||nC|
|**Dynamic Characteristics**|||||||
|Input Capacitance|Ciss|VDS=-50V,VGS=0V,f=1MHz||949||pF|
|Output Capacitance|Coss|||24|||
|Reverse Transfer Capacitance|Crss|||21|||
|Total Gate Charge|Qg|VDS=-50V,VGS=-10V,ID=-5A||18.4||nC|
|Gate-Source Charge|Qgs|||1.4|||
|Gate-Drain Charge|Qgd|||2.2|||
|Turn-On  Delay Time|td(on)|VDD=-50V,VGS=-10V<br>RG=2.7Ω, ID=-5A||7||ns|
|Turn-On  Rise Time|tr|||32.4|||
|Turn-Off  Delay Time|td(off)|||26.2|||
|Turn-Off  Fall Time|tf|||6.4|||



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## **N-MOSFET Curve Characteristics** 

**==> picture [266 x 204] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1 - Typical Output Characteristics<br>30<br>VGS=10V, 8V, 6V, 5V, 4.5V, 4V<br>25<br>20<br>VGS=3.5V<br>15<br>10<br>VGS=3V<br>5<br>VGS=2.5V<br>0<br>0 1 2 3 4 5<br>Drain to Source Voltage (V)<br>Drain Current (A)<br>**----- End of picture text -----**<br>


**==> picture [222 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 3 - RDS(ON)-VGS<br>200<br>ID=10A<br>150<br>100<br>50 25 ° C<br>0<br>2 4 6 8 10<br>Gate to Source Voltage (V)<br>Drain-Source On-Resistance (mΩ)<br>**----- End of picture text -----**<br>


**Fig. 5 - Capacitance Characteristics** 

**==> picture [230 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
10000<br>Ciss<br>1000<br>100<br>Coss<br>C rss<br>10<br>0 20 40 60 80 100<br>Drain to Source Voltage (V)<br>Capacitance (pF)<br>**----- End of picture text -----**<br>


**==> picture [226 x 606] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 2 - Transfer Characteristics<br>30<br>VDS=5V<br>25°C<br>25<br>20<br>150°C<br>15<br>10<br>5<br>0<br>0 2 4 6 8 10<br>Gate to Source Voltage (V)<br>Fig. 4 - RDS(ON)-ID<br>200<br>150<br>100 VGS=4.5V<br>VGS=10V<br>50<br>0<br>0.0 2.5 5.0 7.5 10.0 12.5 15.0<br>Drain Current (A)<br>Fig. 6 - Gate Charge<br>10<br>VDS=50V<br>ID=10A<br>8<br>6<br>4<br>2<br>0<br>0 5 10 15 20 25<br>Gate Charge(nC)<br>Drain Current (A)<br>Drain-Source On Resistance (mΩ)<br>Gate-Source Voltage (V)<br>**----- End of picture text -----**<br>


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## **N-MOSFET Curve Characteristics** 

**==> picture [227 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7 - Normalized Threshold Voltage<br>1.4<br>1.2<br>ID=250μA<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature  (°C)<br>VGS(th) - Threshold Voltage Normalized<br>**----- End of picture text -----**<br>


**==> picture [226 x 180] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 9 - IS-VSD<br>100<br>V GS =0V<br>10<br>150°C 25°C<br>1<br>0.1<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>Source To Drain Voltage (V)<br>Source Current (A)<br>**----- End of picture text -----**<br>


**==> picture [227 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 8 - Normalized On Resistance Characteristics<br>3.0<br>VGS=10V<br>ID=10A<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature  (°C)<br>Normalized On Resistance<br>**----- End of picture text -----**<br>


**==> picture [219 x 181] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 10 - Drain Current<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 25 50 75 100 125 150<br>TC Temperature (°C)<br>ID-Drain Current (A)<br>**----- End of picture text -----**<br>


**==> picture [226 x 180] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 11 - PD Dissipation<br>40<br>30<br>20<br>10<br>0<br>0 25 50 75 100 125 150<br>TC Temperature (°C)<br>Power Dissipation (W)<br>**----- End of picture text -----**<br>


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## **N-MOSFET Curve Characteristics** 

**==> picture [227 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 12 - Safe Operation Area<br>100<br>1μs<br>10 RDS(on) Limited<br>10μs<br>100μs<br>1 DC 300μs<br>1ms<br>10ms<br>0.1<br>T J(max) =150°C<br>T C =25°C<br>Single Pulse<br>0.01<br>0.1 1 10 100 1000<br>Drain to Source Voltage (V)<br>Drain Current (A)<br>**----- End of picture text -----**<br>


**==> picture [412 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 13 - Normalized Transient Thermal Impedance<br>10<br>D=Ton/T<br>In descending order<br>TJ,PK=TC+PdmꞏZθjCꞏRθjC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse<br>RθjC=4°C/W<br>1<br>Single Pulse<br>0.1<br>PDM<br>TON<br>T<br>0.01<br>1E-6 1E-5 1E-4 1E-3 0.01 0.1 1<br>Pulse Width (s)<br>Thermal Resistance<br>Zth(J-C) Normalized Transient<br>**----- End of picture text -----**<br>


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## **P-MOSFET Curve Characteristics** 

**==> picture [220 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1 - Typical Output Characteristics<br>-15<br>VGS=-10V, -8V, -6V, -5V, -4.5V, -4V, -3.5V<br>-12<br>-9<br>VGS=-3V<br>-6<br>-3 V GS =-2.5V<br>0<br>0 -1 -2 -3 -4 -5<br>Drain to Source Voltage (V)<br>Drain Current (A)<br>**----- End of picture text -----**<br>


**==> picture [227 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 3 - RDS(ON)-VGS<br>1000<br>ID=-5A<br>800<br>600<br>400<br>200 25°C<br>0<br>-2 -4 -6 -8 -10<br>Gate to Source Voltage (V)<br>Drain-Source On-Resistance (mΩ)<br>**----- End of picture text -----**<br>


**==> picture [232 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 5 - Capacitance Characteristics<br>10000<br>C iss<br>1000<br>100<br>Coss<br>10 Crss<br>1<br>0 -2 -40 -60 -80 -100<br>Drain to Source Voltage (V)<br>Capacitance (pF)<br>**----- End of picture text -----**<br>


**==> picture [224 x 606] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 2 - Transfer Characteristics<br>-15<br>VDS=-5V<br>25°C<br>-12<br>-9<br>150°C<br>-6<br>-3<br>0<br>0 -2 -4  -6 -8 -10<br>Gate to Source Voltage (V)<br>Fig. 4 - RDS(ON)-ID<br>600<br>500<br>400<br>VGS=-4.5V<br>300<br>VGS=-10V<br>200<br>100<br>0<br>0 -2.5 -5 -7.5 -10 -12.5 -15<br>Drain Current (A)<br>Fig. 6 - Gate Charge<br>-10<br>VDS=-50V<br>ID=-5A<br>-8<br>-6<br>-4<br>-2<br>0<br>0 5 10 15 20<br>Gate Charge(nC)<br>Drain Current (A)<br>Drain-Source On Resistance (mΩ)<br>Gate-Source Voltage (V)<br>**----- End of picture text -----**<br>


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## **P-MOSFET Curve Characteristics** 

**==> picture [227 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7 - Normalized Threshold Voltage<br>1.4<br>1.2<br>ID=-250μA<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature  (°C)<br>VGS(th) - Threshold Voltage Normalized<br>**----- End of picture text -----**<br>


**==> picture [228 x 180] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 9 - IS-VSD<br>-100<br>V GS =0V<br>-10<br>150°C 25 ° C<br>-1<br>-0.1<br>-0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2<br>Source To Drain Voltage (V)<br>Source Current (A)<br>**----- End of picture text -----**<br>


**==> picture [227 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 8 - Normalized On Resistance Characteristics<br>3.0<br>VGS=-10V<br>ID=-5A<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature  (°C)<br>Normalized On Resistance<br>**----- End of picture text -----**<br>


**==> picture [216 x 180] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 10 - Drain Current<br>-6<br>-5<br>-4<br>-3<br>-2<br>-1<br>0<br>0 25 50 75 100 125 150<br>TC Temperature (°C)<br>ID-Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig. 11 - PD Dissipation** 

**==> picture [226 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
30<br>25<br>20<br>15<br>10<br>5<br>0<br>0 25 50 75 100 125 150<br>TC Temperature (°C)<br>Power Dissipation (W)<br>**----- End of picture text -----**<br>


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## **P-MOSFET Curve Characteristics** 

**==> picture [229 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 12 - Safe Operation Area<br>-100<br>-10 1μs<br>R DS(on)  Limited 10μs<br>-1 DC 100μs<br>300μs<br>1ms<br>-0.1 10ms<br>T J(max) =150°C<br>T C =25°C<br>-0.01 Single Pulse<br>-0.1 -1 -10 -100 -1000<br>Drain to Source Voltage (V)<br>Drain Current (A)<br>**----- End of picture text -----**<br>


**==> picture [414 x 180] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 13 - Normalized Transient Thermal Impedance<br>10<br>D=Ton/T<br>In descending order<br>TJ,PK=TC+PdmꞏZθjCꞏRθjC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse<br>RθjC=5.2°C/W<br>1<br>Single Pulse<br>0.1<br>PDM<br>TON<br>T<br>0.01<br>1E-6 1E-5 1E-4 1E-3 0.01 0.1 1<br>Pulse Width (s)<br>Thermal Resistance<br>Zth(J-C) Normalized Transient<br>**----- End of picture text -----**<br>


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## **Ordering Information** 

|**Device**|**Packing**|
|---|---|
|Part Number-TP|Tape&Reel: 5Kpcs/Reel|



## *****IMPORTANT NOTICE***** 

_**Micro Commercial Components Corp**_ . reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . _**Micro Commercial Components Corp**_ . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold _**Micro Commercial Components Corp**_ . and all the companies whose products are represented on our website, harmless against all damages. _**Micro Commercial Components Corp**_ . products are sold subject to the general terms and conditions of commercial sale, as published at 

## **https://www.mccsemi.com/Home/TermsAndConditions.** 

## *****LIFE SUPPORT***** 

MCC's products are not authorized for use as critical components in life support devices or systems without the express written approval of Micro Commercial Components Corporation. 

## *****CUSTOMER AWARENESS***** 

Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. **MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources** . MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 

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## Links

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- [Supplier page](https://es.farnell.com/micro-commercial-components-mcc/mcgd115np10l-tp/mosfet-dual-n-ch-p-ch-100v-dfn3333/dp/4816285)
---

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