# Thyristor Module, Series Connected, 250 A, 1.6 kV

![Product image](https://novapart.co/image/farnell:2674804/)

**URL**: https://novapart.co/products/MCC220-16IO1/thyristor-module-series-connected-250-a-16-kv
**SKU**: MCC220-16IO1
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - SCR Modules
**Price**: €53.6000
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 7Pins |
| Scr Module Type | Series Connected - SCRs |
| Thyristor Mounting | Panel |
| Holding Current Max | 150mA |
| On State Rms Current | 400A |
| Thyristor Case Style | Y2 |
| Average Forward Current | 250A |
| Average On State Current | 250A |
| Gate Trigger Current Max | 150mA |
| Gate Trigger Voltage Max | 2V |
| Operating Temperature Max | 125°C |
| Repetitive Peak Reverse Voltage | 1.6kV |
| Peak Non Repetitive Surge Current | 8.5kA |
| Peak Repetitive Off State Voltage | 1.6kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2674804/)

**MCC220-16io1** 

## **Thyristor Module** 

**VRRM** _**=**_ **2x 1600 V** 

**I TAV** _**=**_ **250 A VT** _**=**_ **1.14 V** 

## Phase leg 

## **Part number** 

## **MCC220-16io1** 

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## **Features / Advantages:** 

- Thyristor for line frequency 

- Planar passivated chip 

- Long-term stability 

- Direct Copper Bonded Al2O3-ceramic 

## **Applications:** 

- Line rectifying 50/60 Hz 

- Softstart AC motor control 

- DC Motor control 

- Power converter 

- AC power control 

- Lighting and temperature control 

## Y2 

## **Package:** 

- Isolation Voltage:          V~3600 

- Industry standard outline 

- RoHS compliant 

- Soldering pins for PCB mounting 

- Base plate: DCB ceramic 

- Reduced weight 

- Advanced power cycling 

## **Terms  Conditions of usage:** 

The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. 

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; 

> - the conclusion of quality agreements; 

- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20160823b 

© 2016 IXYS all rights reserved 

**MCC220-16io1** 

|**Thyristor**|**Thyristor**|**Ratings**|**Ratings**|**Ratings**|**Ratings**|**Ratings**|
|---|---|---|---|---|---|---|
|**Symbol**<br>**Definition**<br>**Conditions**|||**min.**|**typ.**|**max.**|**Unit**|
|**V**<br>**RSM/DSM**<br>_max. non-repetitive reverse/forward blocking voltage_||T    =   25°C<br>VJ|||1700|V|
|**V**<br>**RRM/DRM**<br>_max. repetitive reverse/forward blocking voltage_||T    =   25°C<br>VJ|||1600|V|
|**I**<br>**R/D**<br>_reverse current, drain current_|V    =          V<br>V    =          V<br>1600<br>1600<br>R/D<br>R/D|T    =   25°C<br>VJ<br>T    =       °C<br>VJ<br>140|||1<br>40|mA<br>mA|
|**VT**<br>_forward voltage drop_|I   =         A<br>T<br>200<br>I   =         A<br>400<br>T|T    =   25°C<br>VJ|||1.24<br>1.39|V<br>V|
||I   =         A<br>T<br>200<br>I   =         A<br>400<br>T|T    =       °C<br>VJ<br>125|||1.14<br>1.33|V<br>V|
|**I**<br>**I**<br>_RMS forward current_<br>**T(RMS)**<br>**TAV**<br>_average forward current_|T  =       °C<br>C<br>85<br>180° sine|T    =       °C<br>VJ<br>140|||250<br>400|A<br>A|
|**VT0**<br>**rT**<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T    =       °C<br>VJ<br>140|||0.90<br>1|V<br>mΩ|
|**R**<br>**thJC**<br>_thermal resistance junction to case_|||||0.14|K/W|
|**RthCH**<br>_thermal resistance case to heatsink_||||0.040||K/W|
|**Ptot**<br>_total power dissipation_||T    =   25°C<br>C|||820|W|
|**ITSM**<br>_max. forward surge current_|t =  10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|T    =   45°C<br>VJ<br>V    = 0 V<br>R|||8.50<br>9.18|kA<br>kA|
||t =  10 ms; (50 Hz), sine|T    =       °C<br>VJ<br>140|||7.23<br>7.81|kA<br>kA|
||<br>t = 8,3 ms; (60 Hz), sine|V    = 0 V<br>R|||||
|**I²t**<br>_value for fusing_|t =  10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|T    =   45°C<br>V    = 0 V<br>VJ<br>R|||361.3<br>350.6|kA²s<br>kA²s|
||t =  10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|T    =       °C<br>140<br>V    = 0 V<br>VJ<br>R|||261.0<br>253.4|kA²s<br>kA²s|
|**CJ**<br>_junction capacitance_|V  =         V<br>400<br>f = 1 MHz<br>R|T    =   25°C<br>VJ||438||pF|
|**PGM**<br>_max. gate power dissipation_<br>**PGAV**<br>_average gate power dissipation_|t  =   30 µs<br>P<br>t  =<br>P<br>500 µs|T    =       °C<br>C<br>140|||120<br>60<br>20|W<br>W<br>W|
|**(di/dt)cr**<br>_critical rate of rise of current_|repetitive,   I   =<br>TVJ = 140°C; f = 50 Hz<br>t  =        µs;<br>I<br>A; V  =⅔V<br>750 A<br>T<br>P<br>G =<br>1<br>di  /dt<br>A/µs;<br>G<br>=<br>1<br>DRM<br>non-repet., I   = 250 A<br>T<br>200|repetitive,   I   =<br>750 A<br>T|||100|A/µs|
||||||500|A/µs|
|**(dv/dt)**<br>_critical rate of rise of voltage_<br>**cr**|T<br>= 140°C<br>R     =∞; method 1 (linear voltage rise)<br>VJ<br>V  =⅔VDRM<br>GK||||1000|V/µs|
|**VGT**<br>_gate trigger voltage_<br>**IGT**<br>_gate trigger current_|V = 6 V<br>T<br>=<br>°C<br>25<br>D<br>VJ<br>T<br>=<br>°C<br>-40<br>VJ<br>V = 6 V<br>T<br>=<br>°C<br>25<br>D<br>VJ<br>T<br>=<br>°C<br>-40<br>VJ||||2<br>150<br>3<br>200|V<br>mA<br>V<br>mA|
|**VGD**<br>_gate non-trigger voltage_<br>**IGD**<br>_gate non-trigger current_|T<br>=<br>°C<br>VJ<br>V  =⅔V<br>D<br>DRM<br>140||||0.25<br>10|V<br>mA|
|_latching current_<br>**IL**|T<br>=<br>°C<br>VJ<br>25<br>t<br>µs<br>p =<br>30<br>I<br>A;<br>=045<br>di  /dt<br>A/s<br><br>=045||||200|mA|
||G  .<br> <br>µ<br>G<br> .||||||
|_holding current_<br>**IH**|T<br>=<br>°C<br>VJ<br>25<br>V = 6 V<br>D<br>R    =∞<br>GK||||150|mA|
|_gate controlled delay time_<br>**tgd**|T<br>=<br>°C<br>VJ<br>25<br>I<br>A;<br>G =<br>1<br>di  /dt<br>A/µs<br>G<br>=<br>1<br>V   = ½ V<br>D<br>DRM||||2|µs|
|_turn-off time_<br>**tq**|T<br>=<br>°C<br>VJ<br>di/dt =<br>A/µs<br>10<br>dv/dt =<br>V/µs<br>50<br>V   =<br>R<br>100 V; I<br>A;<br>T = 250<br>V  =⅔VDRM<br>t<br>µs<br>p = 200<br>125|||200||µs|
||||||||



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20160823b 

© 2016 IXYS all rights reserved 

**MCC220-16io1** 

|**Symbol**<br>**Definition**<br>**Conditions**|**min.**|**typ.**|**max.**|**Unit**|
|---|---|---|---|---|
|**I RMS**<br>_RMS current_<br>per terminal<br>~~||~~|~~||~~|~~||~~|600|A|
|**TVJ**<br>_virtual junction temperature_<br>~~||~~<br>~~——~~|-40<br>~~||~~<br>~~——~~|~~||~~<br>~~——~~|140|°C|
|**Top**<br>_operation temperature_<br>~~——~~|-40<br>~~——~~|~~——~~|125|°C|
|**Tstg**<br>_storage temperature_<br>~~——~~<br>~~|~~|-40<br>~~——~~<br>~~|~~|~~——~~<br>~~|~~|125|°C|
|**Weight**<br>~~|~~|~~|~~|255<br>~~|~~||g|
|**M D**<br>_mounting torque_<br>**M T**<br>_terminal torque_<br>~~|~~<br>~~[~~|2.5<br>12<br>~~|~~<br>~~[~~|~~|~~<br>~~[~~|5<br>15|Nm<br>Nm|
|**dSpp/App**<br>_creepage distance on surface | striking distance through air_<br>**dSpb/Apb**<br>_terminal to backside_<br>_terminal to terminal_<br>~~|~~|13.0<br>13.0<br>~~|~~|~~|~~||mm<br>mm|
|**V**<br>t = 1 second<br>t = 1 minute<br>_isolation voltage_<br>50/60 Hz, RMS; I≤1 mA<br>ISOL<br>**ISOL**|3600<br>3000|||V<br>V|



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Circuit<br>yywwAA<br>Part Number<br>Lot.No: xxxxxx<br>finan<br>Date Code (DC) Data Matrix:  part no.  (1-19), DC +  PI (20-25),  lot.no.#  (26-31),<br>+ Production Index (PI) blank  (32),  serial no.#  (33-36)<br>**----- End of picture text -----**<br>


**Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No.** ~~————~~ Standard MCC220-16io1 MCC220-16io1 Box 2 418854 

**Equivalent Circuits for Simulation** _* on die level_ T    =VJ 140 °C I V0 ~~R~~ 0 **Thyristor** ~~Om~~ **V 0 max** _threshold voltage_ 0.9 V **R0 max** _slope resistance *_ 0.5 mΩ 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20160823b 

© 2016 IXYS all rights reserved 

**MCC220-16io1** 

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 Outlines Y2<br>42.5 35 28.5<br>2.8/0.8<br>M8x16 21<br>hex<br>SW13<br>65 x 57<br>116<br>80 6<br>max. 12.4<br>5.5<br>1<br>2 3<br>30 32<br>4.5<br>0.25<br>38 60<br>5<br>4 5 6 7<br>**----- End of picture text -----**<br>


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3 1 2<br>6 7 5 4<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20160823b 

© 2016 IXYS all rights reserved 

**MCC220-16io1** 

## **Thyristor** 

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12000 50 Hz, 80% VRRM 10 [6] VR = 0 V 500 DC180° sin<br>120°<br>10000 400   60°<br>  30°<br>ITAVM<br>8000<br>ITSM I [2] t 300<br>IFSM 6000 TVJ = 45°C [A]<br>TVJ = 45°C<br>[A] 200<br>4000 [A [2] s]<br>TVJ = 140°C<br>100<br>2000 TVJ = 140°C<br>0 10 [5] 0<br>10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 1 2 3 6 8 10 0 50 100 150 200<br>t  [s] t  [ms] TC [°C]<br>Fig. 1  Surge overload current Fig. 2  I [2] t versus time (1-10 ms) Fig. 3  Max. forward current<br>IT(F)SM: crest value, t: duration              at case temperature<br>600 10<br>RthJA      [K/W] IGT: TVJ = -40°C<br>0.3 IGT: TVJ =    0°C<br>500 0.4 IGT: TVJ =  25°C 2 3<br>1<br>0.5<br>400 1<br>0.6<br>PT 0.8 VG<br>300<br>1 1: PGAV =   20W<br>2: PGAV =   60W<br>1.4 [V] 3: PGAV = 120W<br>[W] 200 0.1<br>DC 1.8<br>180° sin IGD:<br>120° TVJ =   25°C<br>100   60° TVJ = 125°C<br>  30°<br>0.01<br>0<br>0 100 200 300 400 0 50 100 150 0.001 0.01 0.1 1 10 150<br>ITAVM, IFAVM [A] TA [°C] IG  [A]<br>Fig. 4 Power dissipation versus onstate current and• Fig. 5  Gate trigger characteristics<br>           ambient temperature (per thyristor/diode)<br>2500 100<br>RthKA     [K/W]<br>T VJ  =   25°C<br>0.03<br>2000 0.04<br>PT 0.06 typ. Limit<br>100<br>0.08<br>1500<br>0.1 tgd<br>[W] 0.15<br>[µs]<br>1000 0.2<br>Circuit<br>B6 0.3 100<br>3x MCC250<br>or MCD250<br>500<br>0 100<br>0 200 400 600 0 50 100 150 0.01 0.1 1 10<br>IdAVM [A] TA [°C] IG  [A]<br>Fig. 6 Three phase rectifier bridge: Power dissipation versus Fig. 7  Gate trigger delay time<br>           direct output current and ambient temperature<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

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**----- Start of picture text -----**<br>
Data according to IEC 60747and per semiconductor unless otherwise specified<br>**----- End of picture text -----**<br>


20160823b 

© 2016 IXYS all rights reserved 

**MCC220-16io1** 

## **Thyristor** 

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2500<br>RthKA     [K/W]<br>0.03<br>2000 0.04<br>Ptot 0.06<br>0.08<br>1500<br>0.1<br>[W] 0.15<br>1000<br>Circuit 0.2<br>B6<br>3x MCC250 0.3<br>or MCD250<br>500<br>0<br>0 100 200 300 400 500 0 50 100 150<br>IRMS [A] TA [°C]<br>Fig. 7 Three phase AC-controller: Power dissipation versus RMS<br>output current and ambient temperature<br>**----- End of picture text -----**<br>


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0.15<br>RthJCthJC for various conduction angles d:<br>30°<br>DC d RthJC [K/W]<br>DC 0.139<br>180°C 0.141<br>0.10<br>120°C 0.142<br>ZthJC   60°C 0.142<br>[K/W]   30°C 0.143<br>0.05 Constants for ZthJC calculation:<br>i Rthi [K/W] ti [s]<br>1 0.0037   0.0099<br>2 0.0177 0.168<br>0 3 0.1175 0.456<br>10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2]<br>t [s]<br>**----- End of picture text -----**<br>


RthJCthJC for various conduction angles d: 

Fig. 8 Transient thermal impedance junction to case (per thyristor/diode) 

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0.20<br>RthJKthJK for various conduction angles d:<br>30° d RthJK [K/W]<br>DC<br>DC 0.179<br>0.15<br>180°C 0.181<br>ZthJK 120°C 0.182<br>  60°C 0.183<br>0.10<br>  30°C 0.183<br>[K/W] Constants for ZthJK calculation:<br>0.05 i Rthi [K/W] ti [s]<br>1 0.0033   0.0099<br>2 0.0159 0.168<br>0 3 0.1053 0.456<br>10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2]<br>4 0.04 1.36<br>t [s]<br>Fig. 9 Transient thermal impedance junction to heatsink (per thyristor/diode)<br>**----- End of picture text -----**<br>


RthJKthJK for various conduction angles d: 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20160823b 

© 2016 IXYS all rights reserved 



## Links

- [View this product on Novapart](https://novapart.co/products/MCC220-16IO1/thyristor-module-series-connected-250-a-16-kv)
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- [Supplier page](https://es.farnell.com/en-ES/ixys-semiconductor/mcc220-16io1/scr-thyristor-400a-1-6kv-y2-dcb/dp/2674804)
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